SIHFBG20 Search Results
SIHFBG20 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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IRFBG20
Abstract: 81262
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IRFBG20, SiHFBG20 O-220 O-220 18-Jul-08 IRFBG20 81262 | |
IRFBG20Contextual Info: IRFBG20,SiHFBG20_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE, |
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IRFBG20 SiHFBG20 AN609, 7079m 5892m 5090m 8530m 9441m 7634m 1217u | |
Contextual Info: IRFBG20, SiHFBG20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 1000 RDS(on) () VGS = 10 V 11 Qg (Max.) (nC) 38 Qgs (nC) 4.9 Qgd (nC) 22 Configuration Single COMPLIANT Third generation Power MOSFETs from Vishay provide the |
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IRFBG20, SiHFBG20 O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A | |
IRFBG20Contextual Info: IRFBG20, SiHFBG20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 1000 RDS(on) (Ω) VGS = 10 V 11 Qg (Max.) (nC) 38 Qgs (nC) 4.9 Qgd (nC) 22 Configuration Single D Available RoHS* COMPLIANT DESCRIPTION TO-220 Third generation Power MOSFETs from Vishay provide the |
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IRFBG20, SiHFBG20 O-220 12-Mar-07 IRFBG20 | |
Contextual Info: IRFBG20, SiHFBG20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 1000 RDS(on) () VGS = 10 V 11 Qg (Max.) (nC) 38 Qgs (nC) 4.9 Qgd (nC) 22 Configuration Single COMPLIANT Third generation Power MOSFETs from Vishay provide the |
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IRFBG20, SiHFBG20 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
IRFBG20Contextual Info: IRFBG20, SiHFBG20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 1000 RDS(on) () VGS = 10 V 11 Qg (Max.) (nC) 38 Qgs (nC) 4.9 Qgd (nC) 22 Configuration Single COMPLIANT Third generation Power MOSFETs from Vishay provide the |
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IRFBG20, SiHFBG20 O-220AB O-220AB 11-Mar-11 IRFBG20 | |
Contextual Info: IRFBG20, SiHFBG20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 1000 RDS(on) () VGS = 10 V 11 Qg (Max.) (nC) 38 Qgs (nC) 4.9 Qgd (nC) 22 Configuration Single COMPLIANT Third generation Power MOSFETs from Vishay provide the |
Original |
IRFBG20, SiHFBG20 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: IRFBG20, SiHFBG20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 1000 RDS(on) () VGS = 10 V 11 Qg (Max.) (nC) 38 Qgs (nC) 4.9 Qgd (nC) 22 Configuration Single COMPLIANT Third generation Power MOSFETs from Vishay provide the |
Original |
IRFBG20, SiHFBG20 O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A | |
Contextual Info: IRFBG20, SiHFBG20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 1000 RDS(on) () VGS = 10 V 11 Qg (Max.) (nC) 38 Qgs (nC) 4.9 Qgd (nC) 22 Configuration Single COMPLIANT Third generation Power MOSFETs from Vishay provide the |
Original |
IRFBG20, SiHFBG20 O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A | |
Contextual Info: IRFBG20, SiHFBG20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 1000 RDS(on) () VGS = 10 V 11 Qg (Max.) (nC) 38 Qgs (nC) 4.9 Qgd (nC) 22 Configuration Single COMPLIANT Third generation Power MOSFETs from Vishay provide the |
Original |
IRFBG20, SiHFBG20 O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: IRFBG20, SiHFBG20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 1000 RDS(on) () VGS = 10 V 11 Qg (Max.) (nC) 38 Qgs (nC) 4.9 Qgd (nC) 22 Configuration Single COMPLIANT Third generation Power MOSFETs from Vishay provide the |
Original |
IRFBG20, SiHFBG20 2002/95/EC O-220AB 11-Mar-11 |