IRF650A
Abstract: DSTJ 3000 IRF650
Text: IRF650A Advanced Power M O SFET FEATURES B V DSS • A v a la n c h e ■ R u g g e d G a te O x id e T e c h n o lo g y ■ L o w e r In p u t C a p a c ita n c e ■ Im p ro v e d G a te C h a rg e = 2 0 0 V R u g g e d T e c h n o lo g y ^ D S o n —
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IRF650A
O-220
IRF650A
DSTJ 3000
IRF650
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RG-53
Abstract: No abstract text available
Text: IRF654A Advanced Power MOSFET FEATURES B V = 250 V ^ D S o n = 0 .1 4 Q dss ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 21 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|iA (Max.) @ V DS = 250V
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IRF654A
RG-53
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IRF650
Abstract: 125 diode converter circuit dc dc 100V dc motor forward reverse control IRF P CHANNEL MOSFET IRF P CHANNEL MOSFET 100v N-Channel 40V MOSFET N-Channel 40V MOSFET 32a p channel mosfet 100v N-Channel MOSFET 200v
Text: IRF650B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching
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IRF650B
IRF650
125 diode
converter circuit dc dc 100V
dc motor forward reverse control
IRF P CHANNEL MOSFET
IRF P CHANNEL MOSFET 100v
N-Channel 40V MOSFET
N-Channel 40V MOSFET 32a
p channel mosfet 100v
N-Channel MOSFET 200v
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Untitled
Abstract: No abstract text available
Text: IRF654 A d van ced Power MOSFET FEATURES B V DSS = 250 V ♦ Avalanche Rugged Technology ^D S o n - ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 21 0 .1 4 Q A ♦ Improved Gate Charge ♦ Extended Safe Operating Area T O -2 2 0 ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 250V
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IRF654
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IFR654B
Abstract: IRF654B IRFS654B ifr654
Text: IRF654B/IRFS654B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to
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IRF654B/IRFS654B
O-220
IFR654B
IRF654B
IRFS654B
ifr654
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IRF650A
Abstract: IRF650
Text: IRF650A Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS on = 0.085 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 28 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µ A (Max.) @ VDS = 200V
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IRF650A
O-220
IRF650A
IRF650
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IRF654B
Abstract: No abstract text available
Text: IRF654B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching
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IRF654B
O-220
IRF654B
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Untitled
Abstract: No abstract text available
Text: $GYDQFHG 3RZHU 026 7 IRF654A FEATURES BVDSS = 250 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 0.14Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 21 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 250V
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IRF654A
O-220
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Untitled
Abstract: No abstract text available
Text: IRF654B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching
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IRF654B
O-220
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2184A
Abstract: No abstract text available
Text: IRF654 Advanced Power MOSFET FEATURES B V = 250 V ^ D S o n = 0 .1 4 Q dss ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 21 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|iA (Max.) @ V DS = 250V
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IRF654
2184A
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IRF654A
Abstract: No abstract text available
Text: IRF654A A dvanced Power MOSEET FEATURES B V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge dss = 250 V ^ D S o n = lD = ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 |^A (M a x.) @ V DS = 250V
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irf654a
30-OTO
T0-220
QQ3b32fl
O-220
500MIN
7Tb414E
DD3b33D
IRF654A
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IRF654
Abstract: 108D
Text: IRF654 A dvanced Power MOSFET FEATURES B V = 250 V ^D S o n = 0 .1 4 Q dss ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 21 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO-220 ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 250V
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IRF654
O-220
IRF654
108D
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1RFS640A
Abstract: irf530a irf630a ssp4n60as irfs630a IRF540A SSP2N60A SSS7N60A IRFZ44A SSP45N20A
Text: Device List T0-220 1RFZ14A IRFZ24A IRFZ34A IRFZ44A IRF510A IRF520A IRF530A IRF540A [RF550A SSP70N10A IRF610A IRF620A IRF630A IRF640A IRF650A SSP45N20A IRF614A IRF624A IRF634A IRF644A IRF654A IRF710A IRF720A IRF730A IRF740A IRF750A SSP1N50A [RF820A IRF830A
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T0-220
1RFZ14A
IRFZ24A
IRFZ34A
IRFZ44A
IRF510A
IRF520A
IRF530A
IRF540A
RF550A
1RFS640A
irf630a
ssp4n60as
irfs630a
IRF540A
SSP2N60A
SSS7N60A
SSP45N20A
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Untitled
Abstract: No abstract text available
Text: IRF654A Advanced Power MOSFET FEATURES • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 p A Max. @ VDS = 250V B V dss = 250 V
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IRF654A
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IRF654A
Abstract: No abstract text available
Text: IRF654A Advanced Power MOSFET FEATURES BVDSS = 250 V ♦ Avalanche Rugged Technology RDS on = 0.14 Ω ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ID = 21 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO-220 ♦ Lower Leakage Current : 10 µA (Max.) @ VDS = 250V
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IRF654A
O-220
IRF654A
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IRF650
Abstract: No abstract text available
Text: IRF650B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching
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IRF650B
IRF650
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IRF654A
Abstract: 108D
Text: IRF654A Advanced Power MOSFET FEATURES B V = 250 V ^D S o n = 0 .1 4 Q dss ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 21 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO-220 ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 250V
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IRF654A
O-220
IRF654A
108D
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IRF650A
Abstract: mospet
Text: IRF650A Advanced Power MOSFET 200 V R ^ , = 0.085 £i lD = 28 A FEATURES BVdss = • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 m A Max. @ VDS= 200V
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IRF650A
14-CHANNEL
IRF650A
mospet
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IRF650B
Abstract: No abstract text available
Text: IRF650B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching
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IRF650B
IRF650B
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IRF650B
Abstract: IRFS650B
Text: IRF650B / IRFS650B IRF650B / IRFS650B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to
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IRF650B
IRFS650B
IRFS650B
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ifr654
Abstract: No abstract text available
Text: IRF654B/IRFS654B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to
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IRF654B/IRFS654B
O-220
654BT
FP001
O-220F
IRFS654B
IRFS654BT
FP001
ifr654
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LF32A
Abstract: AR523
Text: IRF650A A d va n ce d Power MOSFET FEATURES BVdss = 200 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology F W > ■ Lower Input Capacitance ■ Improved Gate Charge l0 = 28 A ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 n A M a x @ VOS = 200V
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IRF650A
IRF65
LF32A
AR523
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PDF
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IRF654
Abstract: No abstract text available
Text: $GYDQFHG 3RZHU 026 7 IRF654 FEATURES BVDSS = 250 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 0.14Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 21 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 250V
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IRF654
O-220
IRF654
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transistor NEC K2500
Abstract: nec k2500 NEC K2500 Transistor component NEC K2500 mosfet CD4558 cq met t3.15A 250V k2500 N-Channel MOSFET c5042f TO-92 78L05 voltage regulator pin configuration i ball 450 watt smps repairing
Text: A merican Gaming and Electronics, Inc. represents over 200 vendors and carries thousands of items. This catalog is just a partial listing of our products. If for any reason, you do not see the item s you are searching for, please call your local sales representative. The sales
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