IRF750A Search Results

Contextual Info: IRF750A Advanced Power MOSFET FEATURES B ^dss - 400 V ^ D S o n = 0 .3 Q ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 15 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|iA (Max.) @ V DS = 400V

1RFS640A

Abstract: irf530a irf630a ssp4n60as irfs630a IRF540A SSP2N60A SSS7N60A IRFZ44A SSP45N20A
Contextual Info: Device List T0-220 1RFZ14A IRFZ24A IRFZ34A IRFZ44A IRF510A IRF520A IRF530A IRF540A [RF550A SSP70N10A IRF610A IRF620A IRF630A IRF640A IRF650A SSP45N20A IRF614A IRF624A IRF634A IRF644A IRF654A IRF710A IRF720A IRF730A IRF740A IRF750A SSP1N50A [RF820A IRF830A

Contextual Info: Advanced IRF750A P o w e r MOSFEJT FEATURES B V Dss “ ^ • A valan che Rugged T e ch n o lo g y ■ Rugged G ate O xide T e ch n o lo g y ^ D S o n = ■ Low er Input C a p a cita n ce lD = 15 A ■ Im proved G ate C h arg e ■ E xtended S afe O pe ra ting A re a

Contextual Info: IRF750A Advanced Power MOSFET FEATURES BVdss = 400 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ ■ ^DS on = 0 .3 £2 lD * 15 A Lower Leakage Current : 10 jiA {M ax.) @ VDS = 400V

IRF750A

Contextual Info: IRF750A Advanced Power MOSFET FEATURES BVDSS = 400 V ♦ Avalanche Rugged Technology RDS on = 0.3 Ω ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ID = 15 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO-220 ♦ Lower Leakage Current : 10 µA (Max.) @ VDS = 400V

IRF750A

Contextual Info: $GYDQFHG 3RZHU 026 7 IRF750A FEATURES BVDSS = 400 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 0.3Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 15 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 400V

IRF750A

Contextual Info: IRF750A A dvanced Power MOSFET FEATURES BVDSS — 400 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ^D S o n = 0 .3 Q ♦ Lower Input Capacitance lD = 15 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 400V

Contextual Info: IRF750A A dvanced Power MOSEET FEATURES B V DSS - 400 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^ D S o n = ■ Lower Input Capacitance lD = 15 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 n A (M a x .) @ V DS = 400V

Contextual Info: IRF750A A d van ced Power MOSFET FEATURES B V DSS - 400 V ♦ Avalanche Rugged Technology ^D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 0 .3 Î2 15 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO-220 ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 400V

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

YTA630

Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Contextual Info: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509

ss8050 d 331

Abstract: tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 MPSA92(KSP92) equivalent DIODE 1N4148 LL-34
Contextual Info: Power Products S e l e c t i o n G u i d e September, 1999 Power Products Table of Contents Alphanumeric Listing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2

gs driver

Abstract: IRF750A
Contextual Info: ERF750A Advanced Power MOSFET FEATURES BVdss = 400 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 jaA Max. @ VDS= 400V

SSD2104

Abstract: irfm014 SSP80N06 IRFU210A IRFI530A SSS7N60A IRFU*230A sss7n60a 951 SSP2N60A IRF640A
Contextual Info: PRODUCT GUIDE DO- PAK N-Channel Standard FET Part Number SSR3055A BV DSS (V) OS(on) c Hi Q (A) (G) (PF) (nC) I D R PD fC/W) (W) Page 8 0.150 280 17 7.04 18 IRFR014A 8.2 0.140 280 17 7.04 18 Vol.1 IRFR024A 15 0.070 600 32 4.14 30 Vol.1 60V IRFR034A 23 0.040