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    IRF630 TRANSISTOR Search Results

    IRF630 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    IRF630 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRF630

    Abstract: IRF630 MOTOR CONTROL CIRCUIT IRF630FI IRF630 p for IRF630
    Text: IRF630 IRF630FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE IRF630 IRF630FI • ■ ■ ■ ■ VDSS R DS on ID 200 V 200 V < 0.4 Ω < 0.4 Ω 10 A 6A TYPICAL RDS(on) = 0.25 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


    Original     		PDF IRF630 IRF630FI 100oC O-220 ISOWATT220 IRF630 IRF630 MOTOR CONTROL CIRCUIT IRF630FI IRF630 p for IRF630

    IRF630 MOTOR CONTROL CIRCUIT

    Abstract: No abstract text available
    Text: IRF630 IRF630FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE IRF630 IRF630FI • ■ ■ ■ ■ V DSS R DS on ID 200 V 200 V < 0.4 Ω < 0.4 Ω 10 A 6A TYPICAL RDS(on) = 0.25 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


    Original     		PDF IRF630 IRF630FI 100oC O-220 ISOWATT220 IRF630 MOTOR CONTROL CIRCUIT

    irf630

    Abstract: irf630 smd transistor transistor IRF630 irf630s irf630 philips
    Text: Philips Semiconductors Product specification N-channel TrenchMOS transistor FEATURES IRF630, IRF630S SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Low on-state resistance • Fast switching • Low thermal resistance d VDSS = 200 V ID = 9 A


    Original     		PDF IRF630, IRF630S IRF630 O220AB) IRF630S OT404 irf630 smd transistor transistor IRF630 irf630 philips

    irf630

    Abstract: pin detail irf630 irf630 datasheet for IRF630 IRF630 Transistor
    Text: Continental Device India Limited An ISO/TS 16949 and ISO 9001 Certified Company N-CHANNEL ENHANCEMENT MODE FIELD EFFECT POWER TRANSISTOR IRF630 TO-220 Plastic Package High Switching Speed, Low Static Drain-Source On Resistance ABSOLUTE MAXIMUM RATINGS Ta=25oC unless specified otherwise


    Original     		PDF IRF630 O-220 C-120 IRF630 060105D pin detail irf630 irf630 datasheet for IRF630 IRF630 Transistor

    200v mosfet

    Abstract: n mosfet low vgs 200 A 200V mosfet irf630 equivalent low igss mosfet low vgs mosfet irf630 irf630 IRF630 mosfet irf630 datasheet
    Text: INCHANGE MOSFET IRF630 N-channel mosfet transistor ‹ Features 123 ・With TO-220 package ・Low on-state and thermal resistance ・Fast switching ・VDSS=200V; RDS ON ≤0.4Ω;ID=9A ・1.gate 2.drain 3.source ‹ Absolute Maximum Ratings Tc=25℃ SYMBOL PARAMETER


    Original     		PDF IRF630 O-220 O-220 200v mosfet n mosfet low vgs 200 A 200V mosfet irf630 equivalent low igss mosfet low vgs mosfet irf630 irf630 IRF630 mosfet irf630 datasheet

    Untitled

    Abstract: No abstract text available
    Text: <zz>£tni-C.onauctoi J loaucti, L/nc, LJ TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. N-Channel MOSFET Transistor IRF630 0(2) DESCRIPTION • Drain Current -ID=9A@ TC=25°C • Drain Source Voltage-


    Original     		PDF IRF630

    TA17412

    Abstract: irf630 irf630 equivalent IRF632 RF1S630SM RF1S630SM9A TB334 IRF630 p IRF630 INTERSIL
    Text: IRF630, RF1S630SM Data Sheet 9A, 200V, 0.400 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode


    Original     		PDF IRF630, RF1S630SM TA17412. 1578f TA17412 irf630 irf630 equivalent IRF632 RF1S630SM RF1S630SM9A TB334 IRF630 p IRF630 INTERSIL

    IRF632 datasheet

    Abstract: IRF630 datasheet IRF630 IRF632 RF1S630SM RF1S630SM9A TB334 IRF630 mosfet IRF630 Fairchild
    Text: IRF630, RF1S630SM Data Sheet 9A, 200V, 0.400 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode


    Original     		PDF IRF630, RF1S630SM TA17412. IRF632 datasheet IRF630 datasheet IRF630 IRF632 RF1S630SM RF1S630SM9A TB334 IRF630 mosfet IRF630 Fairchild

    irf630

    Abstract: rf1s630sm9a IRF630 Fairchild
    Text: IRF630, RF1S630SM Data Sheet [ /Title IRF63 0, RF1S6 30SM /Subject (9A, 200V, 0.400 Ohm, NChannel Power MOSFETs) /Autho r () /Keywords (9A, 200V, 0.400 Ohm, NChannel Power MOSFETs, Intersil Corporation, TO220AB , TO263AB June 1999 9A, 200V, 0.400 Ohm, N-Channel Power


    Original     		PDF IRF630, RF1S630SM IRF63 O220AB O263AB RF1S630SM irf630 rf1s630sm9a IRF630 Fairchild

    Untitled

    Abstract: No abstract text available
    Text: IRF630 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V)20 I(D) Max. (A)9.0# I(DM) Max. (A) Pulsed I(D)6.0 @Temp (øC)100 IDM Max (@25øC Amb)36# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75# Minimum Operating Temp (øC)-55õ


    Original     		PDF IRF630

    tektronix 576 curve tracer

    Abstract: tektronix type 576 curve tracer curve tracer specification of curve tracer AN-957 12 VOLTS CIRCUIT USING MOSFET IRF630 AN957 short circuit tracer INT-944
    Text: Application Note AN-957 Measuring HEXFET MOSFET Characteristics Table of Contents Page 1. General Information. 1 2. BVDSS . 3


    Original     		PDF AN-957 tektronix 576 curve tracer tektronix type 576 curve tracer curve tracer specification of curve tracer AN-957 12 VOLTS CIRCUIT USING MOSFET IRF630 AN957 short circuit tracer INT-944

    SEC irf630

    Abstract: No abstract text available
    Text: J.E.IIS.U ^E.ml-L.onaucko'i , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 U.S.A. IRF630,631 D84DN2,M2 9.0 AMPERES 200,150 VOLTS "DS(ON) = 0.4 n N-CHANNEL [RUT CASE STYLE TO-220AB DIMENSIONS ARE IN INCHES AND (MILLIMETERS)


    Original     		PDF IRF630 D84DN2 O-220AB 100ms IRF630/D84DN2 IRF631/D84DM2-^ SEC irf630

    tektronix 576 curve tracer

    Abstract: tektronix type 576 curve tracer tektronix 475 short circuit tracer IRF630 AN957 curve tracer INT-944 AN-957 Tracer 176
    Text: AN-957 v.Int Measuring HEXFETCharacteristics (HEXFET is the trademark for International Rectifier Power MOSFETs) Topics covered: • • • • • • • • • • • • • • • • • • • Converting the nomenclature from bipolars to MOSFETs


    Original     		PDF AN-957 tektronix 576 curve tracer tektronix type 576 curve tracer tektronix 475 short circuit tracer IRF630 AN957 curve tracer INT-944 AN-957 Tracer 176

    tektronix 576 curve tracer

    Abstract: tektronix type 576 curve tracer curve tracer AN957 specification of curve tracer 5V GATE TO SOURCE VOLTAGE MOSFET IRF630 short circuit tracer tektronix 475 INT-944
    Text: Index AN-957 v.Int Measuring HEXFETCharacteristics (HEXFET is the trademark for International Rectifier Power MOSFETs) Topics covered: • • • • • • • • • • • • • • • • • • • Converting the nomenclature from bipolars to MOSFETs


    Original     		PDF AN-957 tektronix 576 curve tracer tektronix type 576 curve tracer curve tracer AN957 specification of curve tracer 5V GATE TO SOURCE VOLTAGE MOSFET IRF630 short circuit tracer tektronix 475 INT-944

    Untitled

    Abstract: No abstract text available
    Text: M OTOROLA SEMICONDUCTOR TECHNICAL DATA IRF630 Pow er Field E ffect Transistor N-Channel Enhancement-Mode Silicon Gate This TMOS Power FET is designed fo r low voltage, high speed power sw itching applications such as sw itching regulators, converters, solenoid


    OCR Scan     		PDF IRF630 21A-06 O-220AB) b3b7254

    irf630

    Abstract: IPF630 IRF632 1RF631 IRF631 IRF633 MOSFET 20V 100A IFIF631 IFIF633 motor characteristics curve
    Text: Standard Power M O SFETs IRF630, IRF631, IRF632, IRF633 File Number 1578 Power M O S Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE N-Channel Enhancement-Mode Power Field-Effect Transistors 8.0A and 9.0A, 150V-200V rDs on = 0.4 Cl and 0.6 fi Features:


    OCR Scan     		PDF IRF630, IRF631, IRF632, IRF633 50V-200V IRF632 IRF633 irf630 IPF630 1RF631 IRF631 MOSFET 20V 100A IFIF631 IFIF633 motor characteristics curve

    IRF630

    Abstract: IRF630 MOTOR CONTROL CIRCUIT irf630 n channel transistor IRF630
    Text: ¿57 S G S -T H O M S O N ¡m e ra « IR F 6 3 0 IR F 6 3 0 FI N - CHANNEL ENHANCEMENT MODE _ POWER MOS TRANSISTOR PRELIMINARY DATA TYP E IRF630 IRF630FI V dss RDS on Id 200 V 200 V < 0.4 a < 0.4 a 10 A 6 A . TYPICAL RDS(on) = 0.25 Q. AVALANCHE RUGGED TECHNOLOGY


    OCR Scan     		PDF IRF630 IRF630FI IRF630/FI ISOWATT22Q IRF630 MOTOR CONTROL CIRCUIT irf630 n channel transistor IRF630

    rf630

    Abstract: IRF630 MOTOR CONTROL CIRCUIT
    Text: *57 S G S -T H O M S O N IR F 630 ilLHCTIKMDe IRF630FI N - CHANNEL ENHANCEMENT MODE _ POWER MQS TRANSISTOR PR EL IM IN A R Y D A T A T YPE IRF630 IRF630FI • . . ■ ■ V dss R DS on Id 200 V 200 V < 0.4 a < o.4 a 10 A 6 A TYPICAL RDS(on) = 0.25 Q


    OCR Scan     		PDF IRF630FI IRF630 rf630 IRF630 MOTOR CONTROL CIRCUIT

    rf630

    Abstract: IRF630 IRF632 OT391 IRF631 IRF633 j01 relay
    Text: Ql DE I 3 f l 7 5 G f l l 3 8 75081 G E S O L I D S T A T E D O l ö B S¡14 D r 0 1 E 18354 dT^ 37~ / / - Standard Power MOSFETs IRF630, IRF631, IRF632, IRF633 File Number 1578 Power MOS Field-Effect Transistors N -CH A N N EL E N H A N C EM E N T M O D E


    OCR Scan     		PDF 3fl75Dfll IRF630, IRF631, IRF632, IRF633 50V-200V IRF632 IRF633 rf630 IRF630 OT391 IRF631 j01 relay

    f630

    Abstract: IRF630 HEXFET TRANSISTORS F633 IRFG31 IRF632 alps 103 DIODE C244 mosfet f630 IRFB32 IRF63Q
    Text: HE D I 4 055452 ÜGQâMTS t, | Data Sheet No. PD-9.309G INTERNATI ONAL RECTIFIER T -39-11 INTERNATIONAL RECTIFIER I “ R HEXFET* TRANSISTORS IRF63Q IRFG31 IM IRFB32 - C h a n n e l IRF633 Features: 200 Volt, 0.4 Ohm HEXFET TQ-220AB Plastic Package The HEXFET technology is the key to International Rec­


    OCR Scan     		PDF IRF63Q IRFG31 IRFB32 IRF633 TQ-220AB C-245 IRF630, IRF631, IRF632, IRF633 f630 IRF630 HEXFET TRANSISTORS F633 IRF632 alps 103 DIODE C244 mosfet f630

    MOSFET IRF 630

    Abstract: IRF630 f630 IRF630R 633R
    Text: S H A R R IS IR F 630/631/632/633 IRF630R/631R/632R/633R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package T 0 -2 2 0 A B TOP VIEW • 8.0A and 9.0A , 150 V - 2 0 0 V • r 0 s ° n = 0 .4 Î Î and 0 .6 Î Î • Single Puise A valanche Energy R ated*


    OCR Scan     		PDF IRF630R/631R/632R/633R IRF630, IRF631, IRF632, IRF633 IRF630R, IRF631R, IRF632R IRF633R MOSFET IRF 630 IRF630 f630 IRF630R 633R

    SEC irf630

    Abstract: D84 TRANSISTOR irf630 D84DN2 Irf631 Switching N-Channel Power MOS FET 50a transistor irf630 IRF630 Transistor
    Text: IRF630,631 D84DN2.M2 lP MIfiiD !i£§ FIT FIELD EFFECT POWER TRANSISTOR 9.0 AMPERES S!00,150 VOLTS RDS(ON = 0-4 A This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­


    OCR Scan     		PDF IRF630 D84DN2 12-5n 00A//usec, SEC irf630 D84 TRANSISTOR Irf631 Switching N-Channel Power MOS FET 50a transistor irf630 IRF630 Transistor

    IRF9210

    Abstract: darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1
    Text: PRODUCT INDEX FUNCTIONAL SELECTION GUIDE BIPOLAR TRANSISTOR DESCRIPTION MRTNO. 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 KSP13 KSP2222A KSP27 KSP2907A KSP42 KSP44 KSP56 KSP92 KST10-TF KST2222A-TF KST2484-TF KST2907-TF KST3904-TF KST3906-TF


    OCR Scan     		PDF 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 IRF9210 darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1

    1RF630

    Abstract: No abstract text available
    Text: 43 0 2 2 7 1 0054053 0L.5 • HAS HARRIS ÈRF630/631/632/633 IR F630R /631R /632R /633R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features T 0 -22 0A B TOP VIEW • 8.0A and 9.0A, 150V - 200V • n a s io n = and ° - 6 fi • Single Pulse Avalanche Energy Rated*


    OCR Scan     		PDF RF630/631/632/633 F630R /631R /632R /633R IRF630, IRF631, IRF632, IRF633 IRF630R, 1RF630