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STMicroelectronics IRF630 MOSFET N-CH 200V 9A TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRF630	Tube	12,720		1	1 $1.71 10 $1.71 100 $1.71 1000 $0.57475 10000 $0.57475	Buy Now
Avnet Americas	IRF630	Bulk		53 Weeks, 3 Days	1	1 $1.35 10 $1.35 100 $1.04 1000 $0.721 10000 $0.678	Buy Now
	IRF630	Tube		26 Weeks	2,000	1 - 10 - 100 - 1000 - 10000 $0.58441	Buy Now
Mouser Electronics	IRF630		1,368			1 $1.49 10 $0.763 100 $0.69 1000 $0.574 10000 $0.574	Buy Now
Verical	IRF630		6,188		17	1 - 10 - 100 $0.6374 1000 $0.5455 10000 $0.5455	Buy Now
Arrow Electronics	IRF630		6,204	26 Weeks	1	1 $0.7181 10 $0.7181 100 $0.6314 1000 $0.5404 10000 $0.5404	Buy Now

Newark	IRF630	Bulk	1		1	1 $1.64 10 $1.35 100 $1.04 1000 $0.721 10000 $0.646	Buy Now
STMicroelectronics	IRF630		1,366		1	1 $1.46 10 $0.75 100 $0.68 1000 $0.57 10000 $0.57	Buy Now
Quest Components	IRF630		84			1 $0.75 10 $0.625 100 $0.5 1000 $0.5 10000 $0.5	Buy Now
	IRF630		80			1 $1.25 10 $1.25 100 $0.625 1000 $0.625 10000 $0.625	Buy Now
	IRF630		16			1 $1.33 10 $1.064 100 $1.064 1000 $1.064 10000 $1.064	Buy Now
TME	IRF630		255		1	1 $1.39 10 $1.247 100 $0.943 1000 $0.686 10000 $0.521	Buy Now
Ameya Holding Limited	IRF630		3,276			1 - 10 - 100 - 1000 - 10000 -	Get Quote
ComSIT USA	IRF630		4,248			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Avnet Silica	IRF630		3,050	17 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	IRF630		1,200	27 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Siliconix IRF634PBF MOSFET N-CH 250V 8.1A TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRF634PBF	Tube	6,306		1	1 $1.98 10 $1.98 100 $1.98 1000 $0.70588 10000 $0.70588	Buy Now
Infineon Technologies AG IRF630NPBF MOSFET N-CH 200V 9.3A TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRF630NPBF	Tube	5,725		1	1 $1.66 10 $1.66 100 $1.66 1000 $0.50803 10000 $0.42288	Buy Now
Avnet Americas	IRF630NPBF	Tube	3,890	8 Weeks	1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
	IRF630NPBF	Bulk		16 Weeks, 4 Days	1	1 $1.02 10 $0.87 100 $0.742 1000 $0.55 10000 $0.55	Buy Now
Mouser Electronics	IRF630NPBF		4,800			1 $1.08 10 $0.69 100 $0.623 1000 $0.439 10000 $0.422	Buy Now
Verical	IRF630NPBF		142,692		23	1 - 10 - 100 $0.6202 1000 $0.4299 10000 $0.4048	Buy Now
	IRF630NPBF		13,874		124	1 - 10 - 100 - 1000 $0.2538 10000 $0.2538	Buy Now
	IRF630NPBF		4,000		1,000	1 - 10 - 100 - 1000 $0.2282 10000 $0.2203	Buy Now
	IRF630NPBF		2,263		24	1 - 10 - 100 $0.2471 1000 $0.2471 10000 $0.2471	Buy Now
	IRF630NPBF		2,017		17	1 - 10 - 100 $0.3441 1000 $0.3441 10000 $0.3441	Buy Now
Arrow Electronics	IRF630NPBF		142,704	8 Weeks	1	1 $1.0305 10 $0.678 100 $0.6144 1000 $0.4259 10000 $0.401	Buy Now
	IRF630NPBF		4,979	8 Weeks	1,000	1 $0.3376 10 $0.3376 100 $0.3376 1000 $0.2282 10000 $0.2203	Buy Now
	IRF630NPBF		2,263		1	1 $0.2471 10 $0.2471 100 $0.2471 1000 $0.2471 10000 $0.2471	Buy Now
	IRF630NPBF		2,017	8 Weeks	1	1 $0.3441 10 $0.3418 100 $0.3418 1000 $0.3418 10000 $0.3418	Buy Now

Newark	IRF630NPBF	Bulk	227		1	1 $0.404 10 $0.404 100 $0.404 1000 $0.37 10000 $0.37	Buy Now
Rochester Electronics	IRF630NPBF		745		1	1 $0.4699 10 $0.4699 100 $0.4417 1000 $0.3994 10000 $0.3994	Buy Now
TME	IRF630NPBF		337		1	1 $0.85 10 $0.458 100 $0.409 1000 $0.363 10000 $0.32	Buy Now
Ameya Holding Limited	IRF630NPBF		1,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Chip1Stop	IRF630NPBF	Tube	13,874			1 - 10 $0.289 100 $0.195 1000 $0.194 10000 $0.194	Buy Now
EBV Elektronik	IRF630NPBF		95,000	9 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
New Advantage Corporation	IRF630NPBF		76,000		1	1 - 10 - 100 - 1000 $0.3887 10000 $0.3887	Buy Now
Win Source Electronics	IRF630NPBF		36,150			1 - 10 - 100 - 1000 $0.2 10000 $0.1715	Buy Now
Vishay Siliconix IRF630PBF MOSFET N-CH 200V 9A TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRF630PBF	Tube	5,194		1	1 $1.66 10 $1.66 100 $1.66 1000 $0.55075 10000 $0.55075	Buy Now
RS	IRF630PBF	Bulk			1,000	1 - 10 - 100 - 1000 $1.17 10000 $1.17	Get Quote
Vishay Siliconix IRF630STRLPBF MOSFET N-CH 200V 9A D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRF630STRLPBF	Cut Tape	1,233		1	1 $2.42 10 $1.558 100 $2.42 1000 $2.42 10000 $2.42	Buy Now
	IRF630STRLPBF	Digi-Reel	1,233		1	1 $2.42 10 $1.558 100 $2.42 1000 $2.42 10000 $2.42	Buy Now
	IRF630STRLPBF	Reel	800		800	1 - 10 - 100 - 1000 $0.8044 10000 $0.68375	Buy Now
New Advantage Corporation	IRF630STRLPBF		10,400		1	1 - 10 - 100 - 1000 $0.5138 10000 $0.5138	Buy Now

Find more IRF63 price and stock on Findchips.com

IRF63 Datasheets (260)

Part	Manufacturer	Description	Datasheet Type	PDF
IRF630	Fairchild Semiconductor	9A, 200V, 0.400 Ohm, N-Channel Power MOSFETs	Original	PDF
IRF630	Harris Semiconductor	Power MOSFET Selection Guide	Original	PDF
IRF630	Intersil	9A, 200V, 0.400 ?, N-Channel Power MOSFETs	Original	PDF
IRF630	Philips Semiconductors	N-Channel TrenchMOS Transistor	Original	PDF
IRF630	STMicroelectronics	N-CHANNEL 200V - 0.35 ? - 9A - TO-220-TO220-FP	Original	PDF
IRF630	STMicroelectronics	N-Channel 200V - 0.35W - 9A - TO-220-FP MESH OVERLAY MOSFET	Original	PDF
IRF630	STMicroelectronics	N-channel 200V - 0.35 Ohm - 9A TO-220/TO-220FP Mesh overlay II Power MOSFET	Original	PDF
IRF630	STMicroelectronics	N-channel 200V - 0.35 Ohm - 9A TO-220/TO-220FP Mesh overlay II Power MOSFET	Original	PDF
IRF630	Temic Semiconductors	8-bit CMOS Microcontroller 0-60 MHz	Original	PDF
IRF630	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
IRF630	Transys Electronics	Power MOSFET	Original	PDF
IRF630	Fairchild Semiconductor	N-Channel Power MOSFETs, 12A, 150-200 V	Scan	PDF
IRF630	FCI	POWER MOSFETs	Scan	PDF
IRF630	Frederick Components	Power MOSFET Selection Guide	Scan	PDF

IRF630	General Electric	Power Transistor Data Book 1985	Scan	PDF
IRF630	General Electric	N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A.	Scan	PDF
IRF630	Harris Semiconductor	Power MOSFET Data Book 1990	Scan	PDF
IRF630	International Rectifier	Power MOSFET(Vdss=200V, Rds(on)=0.40ohm, Id=9.0A)	Scan	PDF
IRF630	International Rectifier	TO-220 N-Channel HEXFET Power MOSFET	Scan	PDF
IRF630	Intersil	Over 600 obsolete distributor catalogs now available on the Datasheet Archive - MOSFET, N Channel, 200V, 9A, Pkg Style TO220AB	Scan	PDF

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IRF63 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
IRF634 Abstract: IRF634FP Text: IRF634 IRF634FP N-CHANNEL 250V - 0.38Ω - 8A TO-220/TO-220FP MESH OVERLAY MOSFET TYPE IRF634 IRF634FP • ■ ■ VDSS RDS on ID 250 V 250 V < 0.45 Ω < 0.45 Ω 8A 8A TYPICAL RDS(on) = 0.38 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED 3	Original	PDF	IRF634 IRF634FP O-220/TO-220FP O-220 O-220FP IRF634 IRF634FP
IRF630M Abstract: IRF630MFP Text: IRF630M IRF630MFP N-CHANNEL 200V - 0.35Ω - 9A TO-220/TO-220FP MESH OVERLAY MOSFET TYPE • ■ ■ ■ VDSS RDS on ID IRF630M 200 V < 0.40 Ω 9A IRF630FPM 200 V < 0.40 Ω 9A TYPICAL RDS(on) = 0.35 Ω EXTREMELY HIGH dv/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES	Original	PDF	IRF630M IRF630MFP O-220/TO-220FP IRF630FPM O-220 O-220 O-220FP IRF630M IRF630MFP
Untitled Abstract: No abstract text available Text: PD - 94310 Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description IRF634N IRF634NS IRF634NL l HEXFET Power MOSFET l D RDS on = 0.435Ω	Original	PDF	IRF634N IRF634NS IRF634NL O-220 08-Mar-07
ISL 2651 Abstract: 630n Text: IRF630N/IRF630NS/IRF630NL N-Channel Power MOSFETs 200V, 9.3A, 0.30Ω Features • Peak Current vs Pulse Width Curve • Ultra Low On-Resistance - rDS ON = 0.200Ω (Typ), VGS = 10V • UIS Rating Curve • Simulation Models - Temperature Compensated PSPICE and SABER	Original	PDF	IRF630N/IRF630NS/IRF630NL O-263 O-262 O-220 100oC, ISL 2651 630n
TA17412 Abstract: irf630 irf630 equivalent IRF632 RF1S630SM RF1S630SM9A TB334 IRF630 p IRF630 INTERSIL Text: IRF630, RF1S630SM Data Sheet 9A, 200V, 0.400 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode	Original	PDF	IRF630, RF1S630SM TA17412. 1578f TA17412 irf630 irf630 equivalent IRF632 RF1S630SM RF1S630SM9A TB334 IRF630 p IRF630 INTERSIL
IRF1010 Abstract: IRF634N IRF634NL IRF634NS 1403X Text: PD - 95342 Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free Description IRF634NPbF IRF634NSPbF IRF634NLPbF l l HEXFET Power MOSFET	Original	PDF	IRF634NPbF IRF634NSPbF IRF634NLPbF O-220 12-Mar-07 IRF1010 IRF634N IRF634NL IRF634NS 1403X
IRF630PBF Abstract: No abstract text available Text: PD- 95916 IRF630PbF Lead-Free Document Number: 91031 9/27/04 www.vishay.com 1 IRF630PbF Document Number: 91031 www.vishay.com 2 IRF630PbF Document Number: 91031 www.vishay.com 3 IRF630PbF Document Number: 91031 www.vishay.com 4 IRF630PbF Document Number: 91031	Original	PDF	IRF630PbF 12-Mar-07 IRF630PBF
irf630 Abstract: irf630 smd transistor transistor IRF630 irf630s irf630 philips Text: Philips Semiconductors Product specification N-channel TrenchMOS transistor FEATURES IRF630, IRF630S SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Low on-state resistance • Fast switching • Low thermal resistance d VDSS = 200 V ID = 9 A	Original	PDF	IRF630, IRF630S IRF630 O220AB) IRF630S OT404 irf630 smd transistor transistor IRF630 irf630 philips
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate MOSFET IRF630 MOSFET N-Channel TO-220 1. GATE FEATURES 2. DRAIN 3. SOURCE 123 MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter Value Units ID @TC=25℃ Continuous Drain Current, VGS @ 10 V	Original	PDF	O-220 IRF630 O-220
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate MOSFETS IRF630 MOSFET N-Channel FEATURES z Dynamic dv/dt Rating z Repetitive Avalanche Rated z Fast Switching z Ease of Paralleling z Simple Drive Requirement TO-220 1. GATE 2. DRAIN	Original	PDF	O-220 IRF630 O-220
IRF634N Abstract: IRF634NL IRF634NS SiHF634N SiHF634N-E3 SiHF634NS SiHF634NS-E3 Text: IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NS Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 250 RDS(on) (Ω) VGS = 10 V 0.435 Qg (Max.) (nC) 34 Qgs (nC) 6.5 Qgd (nC) 16 Configuration Single • • • • • • • • Advanced Process Technology	Original	PDF	IRF634N, IRF634NL, IRF634NS, SiHF634N SiHF634NL SiHF634NS O-262) O-220 O-263) 18-Jul-08 IRF634N IRF634NL IRF634NS SiHF634N-E3 SiHF634NS-E3
Untitled Abstract: No abstract text available Text: ^s.nii-donaucto'L L/^ioaueti, One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. N-Channel MOSFET Transistor IRF630B 0( 2) DESCRIPTION • Drain Current -ID= 9A@ TC=25°C • Drain Source Voltage: VDss= 200V(Min)	Original	PDF	IRF630B
Untitled Abstract: No abstract text available Text: IRF630S, SiHF630S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching	Original	PDF	IRF630S, SiHF630S 2002/95/EC O-263) 11-Mar-11
IRF630SPBF Abstract: 95118 Text: PD - 95118 IRF630SPbF • Lead-Free www.irf.com 1 3/17/04 IRF630SPbF 2 www.irf.com IRF630SPbF www.irf.com 3 IRF630SPbF 4 www.irf.com IRF630SPbF www.irf.com 5 IRF630SPbF 6 www.irf.com IRF630SPbF D2Pak Package Outline Dimensions are shown in millimeters inches	Original	PDF	IRF630SPbF EIA-418. IRF630SPBF 95118

Untitled Abstract: No abstract text available Text: IRF634S, SiHF634S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 250 RDS(on) () VGS = 10 V 0.45 Qg (Max.) (nC) 41 Qgs (nC) 6.5 Qgd (nC) 22 Configuration Single D DESCRIPTION D2PAK (TO-263) K G D • Halogen-free According to IEC 61249-2-21	Original	PDF	IRF634S, SiHF634S O-263) 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
IRF630 Abstract: TD 1409 Text: IRF630 Power MOSFET VDSS = 200V, RDS on = 0.40 ohm, ID = 9.0 A D Drain G S Gate Drain Source N Channel ELECTRICAL CHARACTERISICS at Parameter Symbol Tj = 25 C Maximum. Unless stated Otherwise Drain to Source Breakdown Voltage Value Test Conditions Symbol	Original	PDF	IRF630 -20VDC 160VDC, 20VDC 10VDC, O-220-AB IRF630 TD 1409
IRF630S Abstract: No abstract text available Text: IRF630S Power MOSFET VDSS = 200V, RDS on = 0.40 ohm, ID = 9.0 A D G S N Channel ELECTRICAL CHARACTERISICS at Parameter Tj = 25 C Maximum. Unless stated Otherwise Drain to Source Leakage Current Gate Charge QGS Gate to Drain Charge QGD Input Capacitance CISS	Original	PDF	IRF630S 160VDC, 10VDC 25VDC, 100VDC, IRF630S
CMD8 Abstract: No abstract text available Text: IRF232 IRF233 IRF630 By IRF631 Its IRF632 IRF633 2N6759 IRF330 IRF331 IRF333 IRF730 IRF731 Nola1: Non-JEDEC registered valua. lD@ = 25°C Tc 'ro = 100°C VGS th Id e(mA) (V) Min Max R[)S(oo) • d (ft) e (A) (nC) Max Ch. <PF) Con <PF) CtM Proc. Max (PF)	OCR Scan	PDF	DD3711b T-39-01 CMD8
irf630 Abstract: RD161 Text: PD-9.3091 International S Rectifier IRF630 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements VDSS = 200V ^DS on = 0 -4 0 Í2 l D = 9 .0 A Description DATA	OCR Scan	PDF	IRF630 O-220 irf630 RD161
SEC irf630 Abstract: IRF630 irf631 IRF630 SEC irf632 IRF633 for IRF630 Text: ZETEX SEMICOND UCTORS TT70S7Û IS» D 0 0 0 55 7 4 3 IZETB 95D 0 5 5 7 4 I T~3*f-n IRF630 IRF631 IRF632 IRF633 N-channel enhancement mode vertical DMOS FET FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability	OCR Scan	PDF	TT70S7Û IRF630 IRF631 IRF632 IRF633 IRF633 O-220 SEC irf630 IRF630 SEC for IRF630
IRF630R Abstract: IRF633R rf630 IRF631R IRF632R Text: Rugged Pow er M O S F E T s - IRF630R, IRF631R, IRF632R, IRF633R F ile N u m b e r 1990 Avalanche Energy Rated N-Channel Power MOSFETs 8.0A and 9.0A, 150V-200V rDs on = 0.40 and 0.60 N -C H A N N EL E N H A N C EM EN T M O D E D Features:	OCR Scan	PDF	IRF630R, IRF631R, IRF632R, IRF633R 50V-200V 92CS-4ZCS8 IRF632R IRF633R IRF630R rf630 IRF631R
Untitled Abstract: No abstract text available Text: IRF630S N - CHANNEL 200V - 0.35Î2 - 9A - D2PAK MESH OVERLAY MOSFET TYPE V IR F 630 S • . . . . . dss 200 V R d S o i i < 0 .4 0 Q. Id 9 A TYPICAL R D S (on) = 0.35 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES	OCR Scan	PDF	IRF630S O-263
Untitled Abstract: No abstract text available Text: IRF630, RF1S630SM Semiconductor June 1999 Data Sheet 9A, 200V, 0.400 Ohm, N-Channel Power MOSFETs These are N-Channel enhancem ent mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a	OCR Scan	PDF	IRF630, RF1S630SM 400i2
IRF634S Abstract: No abstract text available Text: IRF634S A d v a n c e d Power MOSFET FEATURES BVDSS — ♦ Avalanche Rugged Technology 250 V 0.45Î1 ♦ Rugged Gate Oxide Technology ^D S o n = ♦ Lower Input Capacitance lD = 8.1 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10\|xA (Max.) @ V DS = 250V	OCR Scan	PDF	IRF634S IRF634S

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STMicroelectronics IRF630

Vishay Siliconix IRF634PBF

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IRF63 Datasheets (260)

IRF63 Datasheets Context Search

IRF634

IRF630M

Untitled

ISL 2651

TA17412

IRF1010

IRF630PBF

irf630

Untitled

Untitled

IRF634N

Untitled

Untitled

IRF630SPBF

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IRF630

IRF630S

CMD8

irf630

SEC irf630

IRF630R

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IRF634S