IRF630
Abstract: mosfet irf630fp IRF630FP JESD97
Text: IRF630 IRF630FP N-channel 200V - 0.35Ω - 9A TO-220/TO-220FP Mesh overlay II Power MOSFET General features Type VDSS RDS on ID IRF630 200V <0.40Ω 9A IRF630FP 200V <0.40Ω 9A • Extremely high dv/dt capability ■ Very low intrinsic capacitances ■
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IRF630
IRF630FP
O-220/TO-220FP
O-220
O-220FP
O-220
IRF630
mosfet irf630fp
IRF630FP
JESD97
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PDF
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irf630
Abstract: 200V AUTOMOTIVE MOSFET irf630 datasheet irf630 equivalent IRF630FP JESD97 irf630 to-220
Text: IRF630 IRF630FP N-channel 200V - 0.35Ω - 9A TO-220/TO-220FP Mesh overlay II Power MOSFET General features Type VDSS RDS on ID IRF630 200V <0.40Ω 9A IRF630FP 200V <0.40Ω 9A • Extremely high dv/dt capability ■ Very low intrinsic capacitances ■
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Original
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IRF630
IRF630FP
O-220/TO-220FP
O-220
O-220FP
irf630
200V AUTOMOTIVE MOSFET
irf630 datasheet
irf630 equivalent
IRF630FP
JESD97
irf630 to-220
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PDF
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Untitled
Abstract: No abstract text available
Text: IRF630 IRF630FP N-channel 200V - 0.35Ω - 9A TO-220/TO-220FP Mesh overlay II Power MOSFET General features Type VDSS RDS on ID IRF630 200V <0.40Ω 9A IRF630FP 200V <0.40Ω 9A • Extremely high dv/dt capability ■ Very low intrinsic capacitances ■
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Original
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IRF630
IRF630FP
O-220/TO-220FP
O-220
O-220FP
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PDF
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irf630
Abstract: mosfet irf630
Text: DC COMPONENTS CO., LTD. IRF630 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF N-CHANNEL POWER MOSFET VDSS = 200 Volts RDS ON = 0.4 Ohm ID = 9.0 Amperes Features * Repetitive Avalanche Rated * Fast Switching * Ease of Paralleling * Simple Drive Requirements
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IRF630
O-220AB
irf630
mosfet irf630
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PDF
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SEC irf630
Abstract: IRF630 SEC irf630 datasheet CIRF630 irf630 IRF630 p 4.5V to 100V input regulator 4.5V TO 100V INPUT REGULATORS
Text: IRF630 ! POWER MOSFET GENERAL DESCRIPTION FEATURES This Power MOSFET is designed for low voltage, high Dynamic dv/dt Rating speed power switching applications such as switching Repetitive Avalanche Rated regulators, converters, solenoid and relay drivers.
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IRF630
O-220
IRF630.
SEC irf630
IRF630 SEC
irf630 datasheet
CIRF630
irf630
IRF630 p
4.5V to 100V input regulator
4.5V TO 100V INPUT REGULATORS
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PDF
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irf630
Abstract: irf630 smd transistor transistor IRF630 irf630s irf630 philips
Text: Philips Semiconductors Product specification N-channel TrenchMOS transistor FEATURES IRF630, IRF630S SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Low on-state resistance • Fast switching • Low thermal resistance d VDSS = 200 V ID = 9 A
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IRF630,
IRF630S
IRF630
O220AB)
IRF630S
OT404
irf630 smd transistor
transistor IRF630
irf630 philips
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PDF
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irf630
Abstract: rf1s630sm9a IRF630 Fairchild
Text: IRF630, RF1S630SM Data Sheet [ /Title IRF63 0, RF1S6 30SM /Subject (9A, 200V, 0.400 Ohm, NChannel Power MOSFETs) /Autho r () /Keywords (9A, 200V, 0.400 Ohm, NChannel Power MOSFETs, Intersil Corporation, TO220AB , TO263AB June 1999 9A, 200V, 0.400 Ohm, N-Channel Power
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IRF630,
RF1S630SM
IRF63
O220AB
O263AB
RF1S630SM
irf630
rf1s630sm9a
IRF630 Fairchild
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PDF
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TA17412
Abstract: irf630 irf630 equivalent IRF632 RF1S630SM RF1S630SM9A TB334 IRF630 p IRF630 INTERSIL
Text: IRF630, RF1S630SM Data Sheet 9A, 200V, 0.400 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode
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Original
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IRF630,
RF1S630SM
TA17412.
1578f
TA17412
irf630
irf630 equivalent
IRF632
RF1S630SM
RF1S630SM9A
TB334
IRF630 p
IRF630 INTERSIL
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PDF
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IRF632 datasheet
Abstract: IRF630 datasheet IRF630 IRF632 RF1S630SM RF1S630SM9A TB334 IRF630 mosfet IRF630 Fairchild
Text: IRF630, RF1S630SM Data Sheet 9A, 200V, 0.400 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode
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Original
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IRF630,
RF1S630SM
TA17412.
IRF632 datasheet
IRF630 datasheet
IRF630
IRF632
RF1S630SM
RF1S630SM9A
TB334
IRF630 mosfet
IRF630 Fairchild
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PDF
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irf630
Abstract: No abstract text available
Text: N-CHANNEL POWER MOSFETS IRF630/631 FEATURES • Lower R ds <on • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower Input capacitance • Extended safe operating area • Improved high temperature reliability
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OCR Scan
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IRF630/631
IRF630
IRF631
irf630
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PDF
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Untitled
Abstract: No abstract text available
Text: IRF630, RF1S630SM Semiconductor June 1999 Data Sheet 9A, 200V, 0.400 Ohm, N-Channel Power MOSFETs These are N-Channel enhancem ent mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a
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OCR Scan
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IRF630,
RF1S630SM
400i2
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PDF
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IRF630
Abstract: IRFP230 for IRF630 F632 IRFP231 IRF630 mosfet IRF633 ade 633 IRF632 IRFP233
Text: IRF630/631Z632/633 IR FP230/231/232/233 N-CHANNEL POWER MOSFETS FEATURES TO-220 • Low er R ds <on • • • • • Improved inductive ruggedness Fast switching times Rugged polysilfcon gate cell structure Lower input capacitance Extended safe operating area
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OCR Scan
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IRF630/631Z632/633
FP230/231/232/233
O-220
IRF630/IRFP230
IRF631
/IRFP231
IRF632/IRFP232
IRF633/IRFP233
IRF630/631/632/633
IRFP230/231/232/233
IRF630
IRFP230
for IRF630
F632
IRFP231
IRF630 mosfet
IRF633
ade 633
IRF632
IRFP233
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PDF
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Untitled
Abstract: No abstract text available
Text: M OTOROLA SEMICONDUCTOR TECHNICAL DATA IRF630 Pow er Field E ffect Transistor N-Channel Enhancement-Mode Silicon Gate This TMOS Power FET is designed fo r low voltage, high speed power sw itching applications such as sw itching regulators, converters, solenoid
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OCR Scan
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IRF630
21A-06
O-220AB)
b3b7254
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PDF
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irf630
Abstract: IRF230 12N20 f630 IRF630-633 IRF231 IRF631 IRF632 IRF633 MTP12N18
Text: FAIRCHILD S E M I C O ND UC TO R_ I FAIRCHILD 34^7.4 005787'! „ MTP12N18/12N20 T N-Channe! Power MOSFETs, 12 A, 150-200 V A Schlumberger Company Power And Discrete Division Description rO-204AA TO-220AB RF230 RF231 RF232 RF233 IRF630 IRF631
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OCR Scan
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IRF230-233/IRF630-633
MTP12N18/12N20
TQ-204AA
O-220AB
IRF630
IRF631
IRF632
IRF633
MTP12N18
MTP12N20
irf630
IRF230
12N20
f630
IRF630-633
IRF231
IRF631
IRF632
IRF633
MTP12N18
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PDF
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SEC irf630
Abstract: IRF630 irf631 IRF630 SEC irf632 IRF633 for IRF630
Text: ZETEX SEMICOND UCTORS TT70S7Û IS» D 0 0 0 55 7 4 3 IZETB 95D 0 5 5 7 4 I T~3*f-n IRF630 IRF631 IRF632 IRF633 N-channel enhancement mode vertical DMOS FET FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability
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OCR Scan
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TT70S7Û
IRF630
IRF631
IRF632
IRF633
IRF633
O-220
SEC irf630
IRF630 SEC
for IRF630
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PDF
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IRFB30
Abstract: IRF632 17nF IRF 120A
Text: MICRO ELECTRONICS CORP 11E D • bG^17ñfl 0000704 7 ■ ^PRELIMINARY IRF630 IRF631 IRF632 IRF633 HIGH POWER MÖSFETs P « i Nuoto* APPLICATIO N S SWITCHING REGULATORS' • t * MOTOR DRIVERS *03 ROS(en 200V 040 S.OA MF631 150V B.OA IRF432 200V IRF633 160V
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OCR Scan
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IRF630
IRF631
IRF632
IRF633
IRFB30
MF631
IRF432
17nF
IRF 120A
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PDF
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Equivalent IRF 44
Abstract: sony 2sj54 VN0109N3 irf 80 n BUZ44 VN0104N5 2SJ54 irf 44 n VN0108N2 VN0104N1
Text: Siliconix 1-1? f l CO CO COCO Ol o LL. U . t t ù i • ■ N M C O M «M O LL. U . IRF230 ■ IRF231 - IRF232 ■ IRF233 IRF630 ■ IRF631 - IRF632 ■ IRF633 200VMOSPOWER These power FETs are designed especially for switching regulators, power converters,
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OCR Scan
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O-220
VN1000D
IRF522
VN1000A
IRF540
IRF632
IRF640
Equivalent IRF 44
sony 2sj54
VN0109N3
irf 80 n
BUZ44
VN0104N5
2SJ54
irf 44 n
VN0108N2
VN0104N1
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PDF
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IRFP231
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b4E » • 7^1=4142 G0121ÛS ST1 ■ SM6 K IRF630/631/632/633 IRFP230/231Z232/233 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • TO-220 Lower R d s ON Improved Inductive ruggedness Fast switching times Rugged polysilicon gate cell structure
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OCR Scan
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G0121Ã
IRF630/631/632/633
IRFP230/231Z232/233
O-220
/IRFP231
IRFP230/231/232/233
ib414E
IRFP231
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PDF
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1RF630
Abstract: USSR DIODE IRF630 IRF630 p diode oa 90 M300CL ScansUX1016
Text: International K Rectifier PD-9.3091 IRF630 HEXFET® P o w e r M O S F E T • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Sim ple Drive Requirements V DSS = 200V R DS on = 0 -4 0 Í2 ID = 9.0A Description
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OCR Scan
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IRF630
O-220
1RF630
USSR DIODE
IRF630 p
diode oa 90
M300CL
ScansUX1016
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PDF
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irf 4110
Abstract: for IRF630 1RF631 IRF6322 MOTOROLA IRF630 MTM8N20 IRF630 IRF631 irf 1962 SS-AT9
Text: MOTOROLA SC X S T R S /R F IME D II b3fej?554 0 0 0 ^ ^ 3 3 MOTOROLA I • SEMICONDUCTOR TECHNICAL DATA IRF630 IRF631 IRF632 P o w e r Field E ffe c t T ran sisto r N-Channel Enhancement-Mode Silicon Gate TM OS These TM O S Power FETs are designed fo r low
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OCR Scan
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IRF630
IRF631
IRF632
IRF630,
IRF632
irf 4110
for IRF630
1RF631
IRF6322
MOTOROLA IRF630
MTM8N20
irf 1962
SS-AT9
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PDF
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rf630
Abstract: IRF630 IRF632 OT391 IRF631 IRF633 j01 relay
Text: Ql DE I 3 f l 7 5 G f l l 3 8 75081 G E S O L I D S T A T E D O l ö B S¡14 D r 0 1 E 18354 dT^ 37~ / / - Standard Power MOSFETs IRF630, IRF631, IRF632, IRF633 File Number 1578 Power MOS Field-Effect Transistors N -CH A N N EL E N H A N C EM E N T M O D E
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OCR Scan
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3fl75Dfll
IRF630,
IRF631,
IRF632,
IRF633
50V-200V
IRF632
IRF633
rf630
IRF630
OT391
IRF631
j01 relay
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PDF
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f630
Abstract: IRF630 HEXFET TRANSISTORS F633 IRFG31 IRF632 alps 103 DIODE C244 mosfet f630 IRFB32 IRF63Q
Text: HE D I 4 055452 ÜGQâMTS t, | Data Sheet No. PD-9.309G INTERNATI ONAL RECTIFIER T -39-11 INTERNATIONAL RECTIFIER I “ R HEXFET* TRANSISTORS IRF63Q IRFG31 IM IRFB32 - C h a n n e l IRF633 Features: 200 Volt, 0.4 Ohm HEXFET TQ-220AB Plastic Package The HEXFET technology is the key to International Rec
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OCR Scan
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IRF63Q
IRFG31
IRFB32
IRF633
TQ-220AB
C-245
IRF630,
IRF631,
IRF632,
IRF633
f630
IRF630 HEXFET TRANSISTORS
F633
IRF632
alps 103
DIODE C244
mosfet f630
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PDF
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MOSFET IRF 630
Abstract: IRF630 f630 IRF630R 633R
Text: S H A R R IS IR F 630/631/632/633 IRF630R/631R/632R/633R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package T 0 -2 2 0 A B TOP VIEW • 8.0A and 9.0A , 150 V - 2 0 0 V • r 0 s ° n = 0 .4 Î Î and 0 .6 Î Î • Single Puise A valanche Energy R ated*
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OCR Scan
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IRF630R/631R/632R/633R
IRF630,
IRF631,
IRF632,
IRF633
IRF630R,
IRF631R,
IRF632R
IRF633R
MOSFET IRF 630
IRF630
f630
IRF630R
633R
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PDF
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Untitled
Abstract: No abstract text available
Text: International jag Rectifier • uêSS^SS 0 0 1 4 7 1 b 3bT B I N R PD-9.3091 I P p e o n INTERNATIONAL R ECTIFIER bSE HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements
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OCR Scan
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IRF630
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PDF
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