IRF140 IR Search Results

IRF140

Abstract: irf140 ir IRF1401
Contextual Info: PD - 90369 IRF140 100V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRF140 BVDSS 100V RDS(on) 0.077Ω ID 28A The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

Contextual Info: PD - 90369 IRF140 100V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRF140 BVDSS 100V RDS(on) 0.077Ω ID 28A The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

ED 83

Contextual Info: Government/ Space Products International [^Rectifier HEXFET, CECC Qualified — Europe N-Channel Types Basic Type IRF044 IRF120 IRF130 IRF140 IRF150 IRF220 IRF230 IRF240 IRF250 IRF244 IRF320 IRF330 IRF340 IRF350 IRF420 IRF430 IRF440 IRF450 VDS V RDS(on)

TA17421

Abstract: IRF140 datasheet IRF140 IRF140 INTERSIL
Contextual Info: IRF140 Data Sheet March 1999 28A, 100V, 0.077 Ohm, N-Channel Power MOSFET • 28A, 100V Formerly developmental type TA17421. • rDS ON = 0.077Ω • Single Pulse Avalanche Energy Rated • SOA is Power-Dissipation Limited • Nanosecond Switching Speeds

Contextual Info: IRF140 MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 4.09 (0.161) 3.84 (0.151) dia. 2 plcs. 11.18 (0.440) 10.67 (0.420) 2 26.67 (1.050) max. 17.15 (0.675) 16.64 (0.655) 1 VDSS ID(cont) RDS(on)

IRF140

Abstract: 100v 28a
Contextual Info: IRF140 MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) VDSS ID(cont) RDS(on) 4.09 (0.161) 3.84 (0.151) dia. 2 plcs. 11.18 (0.440) 10.67 (0.420) 2 26.67 (1.050) max. 17.15 (0.675) 16.64 (0.655)

IRF150 To220 package

Abstract: irf150 to220 IRFP240 xg32 ULTRA FAST RECOVERY RECTIFIERS to-220 irf64d to-3p 1500V IRF122 IRF123 IRF131
Contextual Info: FREDERICK COMPONENTS MIE 3> • 37n4ñS Q0D01b3 5 M F C I A CORTON CO M PA N Y C POWER MOSFETs P ART-N O IRF120 IRF122 IRF123 IRF130 IRF131 IRF132 IRF133 IRF140 IRF141 IRF142 IRF143 IRF150 IRF151 IRF152 IRF153 IRF220 IRF221 IRF222 IRF223 IRF230 IRF231 IRF232

power 22D

Abstract: irf64d IRF740 IRFP240 IRFP450 bridge IRF350 IRF120 IRF122 IRF123 IRF130
Contextual Info: FRED ERICK COMPONENTS MIE 3> • 37n4ñS Q0D01b3 5 M FCI A CORTON COM PANY C POWER MOSFETs P ART-N O IRF120 IRF122 IRF123 IRF130 IRF131 IRF132 IRF133 IRF140 IRF141 IRF142 IRF143 IRF150 IRF151 IRF152 IRF153 IRF220 IRF221 IRF222 IRF223 IRF230 IRF231 IRF232 IRF233

IRF140

Abstract: IRF141 IRF143 IRF142 to204ae IRF140 HARRIS IRF140 ir
Contextual Info: IRF140, IRF141, IRF142, IRF143 h a r r is SEM C0NDUCT0R 28A and 25A, 80V and 100V, 0.077 and 0.100 Ohm, N-Channel Power MOSFETs Juiy 1998 Features Description • 28A and 25A, 80V and 100V • High Input Impedance These are N-Channel enhancement mode silicon gate

Contextual Info: im SEM E IRF140 LAB MECHANICAL DATA D im e nsio ns in mm inches N-CHANNEL POWER MOSFET 100 V V DSS 28A ID(cont) 0.077Q ^D S (on) FEATURES • HERMETICALLY SEALED T O -3 METAL PACKAGE ^ 18.80 (0.740) ^ dia. ! • SIMPLE DRIVE REQUIREMENTS • SCREENING OPTIONS AVAILABLE

Contextual Info: IRF140 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)28 I(DM) Max. (A) Pulsed I(D)20 @Temp (øC)100 IDM Max (@25øC Amb)112 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)125# Minimum Operating Temp (øC)-55

power mosfet IRF14

Abstract: IRF140 IRF143 IRF141 IRF142
Contextual Info: 7 96414 2 .SAMS UNG_S EM I CONDUCTOR 1- ' :V ñ DE § INC 98D 0 50 79 □ □ 0 5 D 7 C] T Dr-3 ? -'3 - N-CHANNEL POWER MOSFETS IRF140/141/142/143 FEA TU R ES LOW RDS on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure

IRF 142

Abstract: IRF142 IRF140 IRF143 IRF141
Contextual Info: IRF 140 - 141 IRF 142 - 143 / = 7 SGS-THOMSON RíflO»ilL[lOT ROD S N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE VDSS IRF140 100 V IRF141 80 V ^DS on fi 0.077 fi IRF142 100 V 0.100 fi 25 A fi 25 A IRF143 • • • • 80 V 0.077 0,100 *D 28 A

IRF140

Abstract: IRF141 IRF142 IRF143 irf14
Contextual Info: 7 9 6 4 1 4 2 .SAMS U N G _ S E M IC O N D U C T O R 1 -' :V ñ DE § INC 98D 0 5 0 7 9 □ □ 0 5 D 7 C] T D r-3?-'3 - N-CHANNEL POWER MOSFETS IRF140/141/142/143 FEA TU R ES LOW RDS on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure

IRF140

Abstract: IRF142 IRF141 IRF143 IFIF141
Contextual Info: Standard Power MOSFETs- IRF140, IRF141, IRF142, IRF143 File N u m b e r Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors 24 A and 27 A, 60 V - 100 V rDsiom = 0.085 O and 0.11 Cl N -C H A N N E L E N H A N C E M E N T M O D E

IRF1401

Abstract: 1RF141 IRF1421 IRF142 IRF140
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IRF140 IRF141 IRF142 P o w e r Field E ffe c t T ra n sisto r N-Channel Enhancement-Mode Silicon Gate TMOS These TM O S P ow er FETs are designed fo r lo w v o lta g e , h ig h speed p o w e r sw itch in g a pp lica tio n s

Contextual Info: •4302571 0 0 5 3 0 0 0 Möl ■ £3 HARRIS HAS IRF140/141/14 2/143 IRF140R/141R/142R/143R N -C h a n n e l Pow er M OSFETs Avalanche Energy R ated* August 1991 Package Features T 0 -2 0 4 A E • 28A and 25A, 80V - 100V • rDS on = 0 .0 7 7 fi and 0 .1 0 fi

MTP27N10E

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IRF140 Pow er Field E ffect Transistor N-Channel Enhancement-Mode Silicon Gate T h is T M O S P o w e r FET is d e s ig n e d fo r lo w Tf v o lta g e , h ig h s p e e d p o w e r s w itc h in g a p p lic a tio n s s u c h a s s w itc h in g re g u la to rs , c o n v e rte rs , s o le n o id

IRF G40

Abstract: G37 IRF IRF1401 IRF140 IOR IRF143 IRF141 IRF142 IRF140 irf 044 mosfet IRF140 ir
Contextual Info: HE 0 | 4Ô5S455 00QTQ5Ô fc, | Data Sheet No. PD-9.369F T ~ 3 ? ~ ~ f3 INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER IÖR REPETITIVE AVALANCHE AND dv/dt RATED* LOWER ON STATE RESISTANCE, 175°C OPERATING TEMPERATURE HEXFET TRANSISTORS IRF1 4 0 IRF1 4 1

irf440

Contextual Info: IOR IRF Series Devices IRF Series Data Sheet T h e IR F D a ta S h e e t d e s c rib e s 32 d e v ic e s , 28 N -C h a n n e l a n d 4 P -C h a n n e l, a ll c o n ta in e d in th e T O -2 Û 4 A A o r T 0 - 2 0 4 A E p a c k a g e . T h is d a ta s h e e t

Contextual Info: 30E D • 7 ^ 2 3 7 □ □ 2 ì ? 4 3 □ ■ H ~ : 3 CI - I 3 Æ 7 S C S -T H O M S O N IRF 140 -141 RMD ia@i[Lli(gTOIRgo©l_ IRF 142 - 143 S 6 S-THOMSON • • • • n - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS ^DS(on •d

IRF series

Abstract: for driver circuit for mosfet IRF240 IRF350 MOSFET driver IRF 543 MOSFET irf460 IRF 870 aK 9AA diode IRF450A irf150 compliment alps 83 7n
Contextual Info: IOR IRF Series Devices IRF Series Data Sheet a lp h a -n u m e ric order. W h e re the inform ation is d e v ic e spe c ific, w e h av e a s s ig n ed a num eric c h a ra cte r for the graph and an alph a c h a ra cte r to a given d evice. S e e T a b le A below . W h e re graphs

MTM13N50E

Abstract: P40N10 24N40 p50n05 8n50e Power MOSFET Cross Reference Guide motorola 20n50e TP50N05E IRF510 mosfet irf640 33N10E
Contextual Info: ir tmos Cross-Reference The follow ing table represents a cro ss-re fe re n ce guide for all T M O S P ow er M O SFETs w hich are m an ufacture d directly by M otorola. W here the M otorola part nu m be r differs from the Industry part num ber, the M otorola de vice is a “form , fit and fu n ctio n ”

IRF054SM

Abstract: BUZ50ASM IRF150P
Contextual Info: Search Results Part number search for devices beginning "IRF044" Datasheets are downloaded as Acrobat PDF files. Semelab Home Fet Products ID cont (A) PD (W) RDSS (Ω) CISS (pF) QG (nC) PRODUCT Polarity Package VDSS (V) IRF044 N-Channel TO3 60V 44A 75W 0.032