IRF140
Abstract: irf140 ir IRF1401
Text: PD - 90369 IRF140 100V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRF140 BVDSS 100V RDS(on) 0.077Ω ID 28A The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.
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IRF140
O-204AA/AE)
param252-7105
IRF140
irf140 ir
IRF1401
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Untitled
Abstract: No abstract text available
Text: PD - 90369 IRF140 100V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRF140 BVDSS 100V RDS(on) 0.077Ω ID 28A The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.
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IRF140
O-204AA/AE)
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PDF
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ED 83
Abstract: No abstract text available
Text: Government/ Space Products International [^Rectifier HEXFET, CECC Qualified — Europe N-Channel Types Basic Type IRF044 IRF120 IRF130 IRF140 IRF150 IRF220 IRF230 IRF240 IRF250 IRF244 IRF320 IRF330 IRF340 IRF350 IRF420 IRF430 IRF440 IRF450 VDS V RDS(on)
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OCR Scan
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IRF044
IRF120
IRF130
IRF140
IRF150
IRF220
IRF230
IRF240
IRF250
IRF244
ED 83
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PDF
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TA17421
Abstract: IRF140 datasheet IRF140 IRF140 INTERSIL
Text: IRF140 Data Sheet March 1999 28A, 100V, 0.077 Ohm, N-Channel Power MOSFET • 28A, 100V Formerly developmental type TA17421. • rDS ON = 0.077Ω • Single Pulse Avalanche Energy Rated • SOA is Power-Dissipation Limited • Nanosecond Switching Speeds
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IRF140
TA17421.
O-204AE
TA17421
IRF140 datasheet
IRF140
IRF140 INTERSIL
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PDF
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Untitled
Abstract: No abstract text available
Text: IRF140 MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 4.09 (0.161) 3.84 (0.151) dia. 2 plcs. 11.18 (0.440) 10.67 (0.420) 2 26.67 (1.050) max. 17.15 (0.675) 16.64 (0.655) 1 VDSS ID(cont) RDS(on)
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IRF140
300ms,
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PDF
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IRF140
Abstract: 100v 28a
Text: IRF140 MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) VDSS ID(cont) RDS(on) 4.09 (0.161) 3.84 (0.151) dia. 2 plcs. 11.18 (0.440) 10.67 (0.420) 2 26.67 (1.050) max. 17.15 (0.675) 16.64 (0.655)
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IRF140
state1660
300ms,
IRF140
100v 28a
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IRF150 To220 package
Abstract: irf150 to220 IRFP240 xg32 ULTRA FAST RECOVERY RECTIFIERS to-220 irf64d to-3p 1500V IRF122 IRF123 IRF131
Text: FREDERICK COMPONENTS MIE 3> • 37n4ñS Q0D01b3 5 M F C I A CORTON CO M PA N Y C POWER MOSFETs P ART-N O IRF120 IRF122 IRF123 IRF130 IRF131 IRF132 IRF133 IRF140 IRF141 IRF142 IRF143 IRF150 IRF151 IRF152 IRF153 IRF220 IRF221 IRF222 IRF223 IRF230 IRF231 IRF232
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OCR Scan
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Q0D01b3
IRF120
IRF122
IRF123
IRF130
IRF131
IRF132
IRF133
IRF140
IRF141
IRF150 To220 package
irf150 to220
IRFP240
xg32
ULTRA FAST RECOVERY RECTIFIERS to-220
irf64d
to-3p 1500V
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PDF
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power 22D
Abstract: irf64d IRF740 IRFP240 IRFP450 bridge IRF350 IRF120 IRF122 IRF123 IRF130
Text: FRED ERICK COMPONENTS MIE 3> • 37n4ñS Q0D01b3 5 M FCI A CORTON COM PANY C POWER MOSFETs P ART-N O IRF120 IRF122 IRF123 IRF130 IRF131 IRF132 IRF133 IRF140 IRF141 IRF142 IRF143 IRF150 IRF151 IRF152 IRF153 IRF220 IRF221 IRF222 IRF223 IRF230 IRF231 IRF232 IRF233
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OCR Scan
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QDD01b3
IRF120
IRF122
IRF123
IRF130
IRF131
IRF132
IRF133
IRF140
IRF141
power 22D
irf64d
IRF740
IRFP240
IRFP450 bridge
IRF350
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PDF
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IRF140
Abstract: IRF141 IRF143 IRF142 to204ae IRF140 HARRIS IRF140 ir
Text: IRF140, IRF141, IRF142, IRF143 h a r r is SEM C0NDUCT0R 28A and 25A, 80V and 100V, 0.077 and 0.100 Ohm, N-Channel Power MOSFETs Juiy 1998 Features Description • 28A and 25A, 80V and 100V • High Input Impedance These are N-Channel enhancement mode silicon gate
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077i2
IRF140,
IRF141,
IRF142,
IRF143
IRF140
IRF141
IRF143
IRF142
to204ae
IRF140 HARRIS
IRF140 ir
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PDF
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Untitled
Abstract: No abstract text available
Text: im SEM E IRF140 LAB MECHANICAL DATA D im e nsio ns in mm inches N-CHANNEL POWER MOSFET 100 V V DSS 28A ID(cont) 0.077Q ^D S (on) FEATURES • HERMETICALLY SEALED T O -3 METAL PACKAGE ^ 18.80 (0.740) ^ dia. ! • SIMPLE DRIVE REQUIREMENTS • SCREENING OPTIONS AVAILABLE
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OCR Scan
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IRF140
300ms,
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PDF
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Untitled
Abstract: No abstract text available
Text: IRF140 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)28 I(DM) Max. (A) Pulsed I(D)20 @Temp (øC)100 IDM Max (@25øC Amb)112 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)125# Minimum Operating Temp (øC)-55
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IRF140
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power mosfet IRF14
Abstract: IRF140 IRF143 IRF141 IRF142
Text: 7 96414 2 .SAMS UNG_S EM I CONDUCTOR 1- ' :V ñ DE § INC 98D 0 50 79 □ □ 0 5 D 7 C] T Dr-3 ? -'3 - N-CHANNEL POWER MOSFETS IRF140/141/142/143 FEA TU R ES LOW RDS on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure
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OCR Scan
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IRF140/141/142/143
IRF140
IRF141
IRF142
IRF143
IRF142
S-60V
power mosfet IRF14
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PDF
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IRF 142
Abstract: IRF142 IRF140 IRF143 IRF141
Text: IRF 140 - 141 IRF 142 - 143 / = 7 SGS-THOMSON RíflO»ilL[lOT ROD S N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE VDSS IRF140 100 V IRF141 80 V ^DS on fi 0.077 fi IRF142 100 V 0.100 fi 25 A fi 25 A IRF143 • • • • 80 V 0.077 0,100 *D 28 A
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OCR Scan
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IRF140
IRF141
IRF142
IRF143
IRF 142
IRF143
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PDF
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IRF140
Abstract: IRF141 IRF142 IRF143 irf14
Text: 7 9 6 4 1 4 2 .SAMS U N G _ S E M IC O N D U C T O R 1 -' :V ñ DE § INC 98D 0 5 0 7 9 □ □ 0 5 D 7 C] T D r-3?-'3 - N-CHANNEL POWER MOSFETS IRF140/141/142/143 FEA TU R ES LOW RDS on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure
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OCR Scan
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IRF140/141/142/143
IRF140
IRF141
IRF142
IRF143
IRF142
s-50V
irf14
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PDF
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IRF140
Abstract: IRF142 IRF141 IRF143 IFIF141
Text: Standard Power MOSFETs- IRF140, IRF141, IRF142, IRF143 File N u m b e r Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors 24 A and 27 A, 60 V - 100 V rDsiom = 0.085 O and 0.11 Cl N -C H A N N E L E N H A N C E M E N T M O D E
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IRF140,
IRF141,
IRF142,
IRF143
IFIF141,
RF142
75BV0SS
IRF140
IRF142
IRF141
IFIF141
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PDF
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IRF1401
Abstract: 1RF141 IRF1421 IRF142 IRF140
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IRF140 IRF141 IRF142 P o w e r Field E ffe c t T ra n sisto r N-Channel Enhancement-Mode Silicon Gate TMOS These TM O S P ow er FETs are designed fo r lo w v o lta g e , h ig h speed p o w e r sw itch in g a pp lica tio n s
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OCR Scan
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IRF140
IRF141
IRF142
IRF1401
1RF141
IRF1421
IRF142
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PDF
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Untitled
Abstract: No abstract text available
Text: •4302571 0 0 5 3 0 0 0 Möl ■ £3 HARRIS HAS IRF140/141/14 2/143 IRF140R/141R/142R/143R N -C h a n n e l Pow er M OSFETs Avalanche Energy R ated* August 1991 Package Features T 0 -2 0 4 A E • 28A and 25A, 80V - 100V • rDS on = 0 .0 7 7 fi and 0 .1 0 fi
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IRF140/141/14
IRF140R/141R/142R/143R
IRF140,
IRF141,
IRF142,
IRF143
IRF140R,
IRF141R,
IRF142R,
IRF143R
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PDF
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MTP27N10E
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IRF140 Pow er Field E ffect Transistor N-Channel Enhancement-Mode Silicon Gate T h is T M O S P o w e r FET is d e s ig n e d fo r lo w Tf v o lta g e , h ig h s p e e d p o w e r s w itc h in g a p p lic a tio n s s u c h a s s w itc h in g re g u la to rs , c o n v e rte rs , s o le n o id
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OCR Scan
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IRF140
D31H5
MTP27N10E
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PDF
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IRF G40
Abstract: G37 IRF IRF1401 IRF140 IOR IRF143 IRF141 IRF142 IRF140 irf 044 mosfet IRF140 ir
Text: HE 0 | 4Ô5S455 00QTQ5Ô fc, | Data Sheet No. PD-9.369F T ~ 3 ? ~ ~ f3 INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER IÖR REPETITIVE AVALANCHE AND dv/dt RATED* LOWER ON STATE RESISTANCE, 175°C OPERATING TEMPERATURE HEXFET TRANSISTORS IRF1 4 0 IRF1 4 1
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OCR Scan
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5S455
00QTQ5Ô
O-204AE
IRF140,
IRF141,
IRF142,
IRF143
S54S2
T-39-13
IRF G40
G37 IRF
IRF1401
IRF140 IOR
IRF141
IRF142
IRF140
irf 044 mosfet
IRF140 ir
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PDF
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irf440
Abstract: No abstract text available
Text: IOR IRF Series Devices IRF Series Data Sheet T h e IR F D a ta S h e e t d e s c rib e s 32 d e v ic e s , 28 N -C h a n n e l a n d 4 P -C h a n n e l, a ll c o n ta in e d in th e T O -2 Û 4 A A o r T 0 - 2 0 4 A E p a c k a g e . T h is d a ta s h e e t
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OCR Scan
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IRF9140
IRF9230
IRF9240
irf440
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PDF
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Untitled
Abstract: No abstract text available
Text: 30E D • 7 ^ 2 3 7 □ □ 2 ì ? 4 3 □ ■ H ~ : 3 CI - I 3 Æ 7 S C S -T H O M S O N IRF 140 -141 RMD ia@i[Lli(gTOIRgo©l_ IRF 142 - 143 S 6 S-THOMSON • • • • n - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS ^DS(on •d
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OCR Scan
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IRF140
IRF141
IRF143
IRF142
r-39-Ã
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PDF
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IRF series
Abstract: for driver circuit for mosfet IRF240 IRF350 MOSFET driver IRF 543 MOSFET irf460 IRF 870 aK 9AA diode IRF450A irf150 compliment alps 83 7n
Text: IOR IRF Series Devices IRF Series Data Sheet a lp h a -n u m e ric order. W h e re the inform ation is d e v ic e spe c ific, w e h av e a s s ig n ed a num eric c h a ra cte r for the graph and an alph a c h a ra cte r to a given d evice. S e e T a b le A below . W h e re graphs
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PDF
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MTM13N50E
Abstract: P40N10 24N40 p50n05 8n50e Power MOSFET Cross Reference Guide motorola 20n50e TP50N05E IRF510 mosfet irf640 33N10E
Text: ir tmos Cross-Reference The follow ing table represents a cro ss-re fe re n ce guide for all T M O S P ow er M O SFETs w hich are m an ufacture d directly by M otorola. W here the M otorola part nu m be r differs from the Industry part num ber, the M otorola de vice is a “form , fit and fu n ctio n ”
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BUZ10
BUZ11
BUZ11A
BUZ11S2
BUZ15
BUZ171
BUZ20
BUZ21
BUZ23
BUZ31
MTM13N50E
P40N10
24N40
p50n05
8n50e
Power MOSFET Cross Reference Guide
motorola 20n50e
TP50N05E
IRF510 mosfet irf640
33N10E
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PDF
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IRF054SM
Abstract: BUZ50ASM IRF150P
Text: Search Results Part number search for devices beginning "IRF044" Datasheets are downloaded as Acrobat PDF files. Semelab Home Fet Products ID cont (A) PD (W) RDSS (Ω) CISS (pF) QG (nC) PRODUCT Polarity Package VDSS (V) IRF044 N-Channel TO3 60V 44A 75W 0.032
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Original
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IRF044"
IRF044
IRF044-JQR-B
IRF044SMD
IRF044SMD-JQR-B
O276AB)
2400pF
IRF054SM
BUZ50ASM
IRF150P
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PDF
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