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    IPB60R099 Price and Stock

    Infineon Technologies AG IPB60R099CPATMA1

    MOSFET N-CH 600V 31A TO263-3
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    Infineon Technologies AG IPB60R099C7ATMA1

    MOSFET N-CH 600V 22A TO263-3
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    Infineon Technologies AG IPB60R099P7ATMA1

    MOSFET N-CH 650V 31A D2PAK
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    Infineon Technologies AG IPB60R099CPAATMA1

    MOSFET N-CH 600V 31A TO263-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
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    Infineon Technologies AG IPB60R099C6ATMA1

    MOSFET N-CH 600V 37.9A D2PAK
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    IPB60R099 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IPB60R099C6 Infineon Technologies N-Channel MOSFETs (>500V - 900V); Package: PG-TO263-3; VDS (max): 600.0 V; Package: D2PAK (TO-263); RDS(ON) @ TJ=25°C VGS=10: 99.0 mOhm; ID(max) @ TC=25°C: 38.0 A; IDpuls (max): 112.0 A; Original PDF
    IPB60R099C6ATMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 37.9A TO263 Original PDF
    IPB60R099C7ATMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V 22A TO263-3 Original PDF
    IPB60R099CP Infineon Technologies CoolMOS Power Transistor Original PDF
    IPB60R099CPA Infineon Technologies FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 31A TO263-3 Original PDF
    IPB60R099CPAATMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 31A TO263-3 Original PDF
    IPB60R099CPATMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 31A D2PAK Original PDF
    IPB60R099P7ATMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH TO263-3 Original PDF

    IPB60R099 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R099C6 Data Sheet Rev. 0.9, 2009-09-07 Preliminary In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPA60R099C6, IPB60R099C6


    Original
    IPx60R099C6 IPA60R099C6, IPB60R099C6 IPP60R099C6 IPW60R099C6 PDF

    6R099C6

    Abstract: 6R099 6r099c6 mosfet IPW60R099C6 IPx60R099C6 IPP60R099C6 CoolMOS TC 6R099C6 IPA60R099C6 TO-247 FULLPAK Package TRANSISTOR SMD MARKING CODE
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R099C6 Data Sheet Rev. 2.0, 2009-09-25 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPA60R099C6, IPB60R099C6


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    IPx60R099C6 IPA60R099C6, IPB60R099C6 IPP60R099C6 IPW60R099C6 6R099C6 6R099 6r099c6 mosfet IPW60R099C6 IPx60R099C6 CoolMOS TC 6R099C6 IPA60R099C6 TO-247 FULLPAK Package TRANSISTOR SMD MARKING CODE PDF

    6R099

    Abstract: 6r099 mosfet infineon 6r099 mosfet 6r099 6r099 Transistor
    Text: IPB60R099CP CoolMOSTM Power Transistor Product Summary Features V DS • Worldwide best R ds,on in TO263 R DS on ,max • Ultra low gate charge Q g,typ 600 V 0.099 Ω 60 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original
    IPB60R099CP PG-TO263-3-2 SP000088490 6R099 6R099 6r099 mosfet infineon 6r099 mosfet 6r099 6r099 Transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: IPB60R099CPA CoolMOS Power Transistor Product Summary V DS R DS on ,max Q g,typ 600 V 0.105 Ω 60 nC Features • Worldwide best Rds,on in TO263 PG-TO263-3-2 • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Automotive AEC Q101 qualified


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    IPB60R099CPA PG-TO263-3-2 6R099A PDF

    6R099

    Abstract: IPB60R099CP smd marking code cp smd code F18 CoolMOS Power Transistor SMD MARKING CODE 102 TRANSISTOR SMD MARKING CODE ag JESD22 SP000088490 MOSFET SMD MARKING CODE
    Text: IPB60R099CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Worldwide best R ds,on in TO263 R DS on ,max • Ultra low gate charge 650 V 0.099 Ω 60 nC Q g,typ • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original
    IPB60R099CP PG-TO263 SP000088490 6R099 6R099 IPB60R099CP smd marking code cp smd code F18 CoolMOS Power Transistor SMD MARKING CODE 102 TRANSISTOR SMD MARKING CODE ag JESD22 SP000088490 MOSFET SMD MARKING CODE PDF

    6R099

    Abstract: IPB60R099CS smd code F18 infineon 6r099 PG-TO263-3-2 PG-TO-263-3-2 DF marking code smd transistor MOSFET MARKING CODE 7V
    Text: IPB60R099CS CoolMOSTM Power Transistor Product Summary Features V DS • Worldwide best R ds,on in TO263 R DS on ,max • Ultra low gate charge Q g,typ 600 V 0.099 Ω 60 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original
    IPB60R099CS PG-TO263-3-2 SP000088490 6R099 6R099 IPB60R099CS smd code F18 infineon 6r099 PG-TO263-3-2 PG-TO-263-3-2 DF marking code smd transistor MOSFET MARKING CODE 7V PDF

    6R099C6

    Abstract: MOSFET TRANSISTOR SMD MARKING CODE A1 IPx60R099C6 IPW60R099C6 TRANSISTOR SMD MARKING CODE 604 IPB60R099C6 to247 pcb footprint 6R099 TRANSISTOR SMD MARKING CODE IPA60R099C6
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R099C6 Data Sheet Rev. 2.1, 2010-02-09 Final Industrial & Multimarket 600V CoolMOS™ C6 Power Transistor 1 IPA60R099C6, IPB60R099C6 IPP60R099C6 IPW60R099C6


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    IPx60R099C6 IPA60R099C6, IPB60R099C6 IPP60R099C6 IPW60R099C6 6R099C6 MOSFET TRANSISTOR SMD MARKING CODE A1 IPx60R099C6 IPW60R099C6 TRANSISTOR SMD MARKING CODE 604 IPB60R099C6 to247 pcb footprint 6R099 TRANSISTOR SMD MARKING CODE IPA60R099C6 PDF

    6R099

    Abstract: ipb60r099cpa PG-TO263-3-2 IPB60R099 6R099A
    Text: IPB60R099CPA CoolMOSTM Power Transistor Product Summary V DS R DS on ,max Q g,typ 600 V 0.105 Ω 60 nC Features • Worldwide best Rds,on in TO263 PG-TO263-3-2 • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Automotive AEC Q101 qualified


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    IPB60R099CPA IPB60R099CPA PG-TO263-3-2 6R099A PG-TO263-3-2 6R099 IPB60R099 PDF

    6R099

    Abstract: 6r099 mosfet Transistor 6r099 SP000088490 6r099 Transistor mosfet 6r099 marking code ff p SMD Transistor IPB60R099CP
    Text: IPB60R099CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Worldwide best R ds,on in TO263 R DS on ,max • Ultra low gate charge 650 V 0.099 Ω 60 nC Q g,typ • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original
    IPB60R099CP PG-TO263 SP000088490 6R099 6R099 6r099 mosfet Transistor 6r099 SP000088490 6r099 Transistor mosfet 6r099 marking code ff p SMD Transistor IPB60R099CP PDF

    6R099C6

    Abstract: CoolMOS TC 6R099C6 6R099 6r099c6 mosfet Diode SMD SJ 36 IPB60R099C6 transistor 6R099C6 IPP60R099C6 IPW60R099C6 6R099* TO220
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R099C6 Data Sheet Rev. 2.1, 2010-02-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPA60R099C6, IPB60R099C6


    Original
    IPx60R099C6 IPA60R099C6, IPB60R099C6 IPP60R099C6 IPW60R099C6 6R099C6 CoolMOS TC 6R099C6 6R099 6r099c6 mosfet Diode SMD SJ 36 IPB60R099C6 transistor 6R099C6 IPW60R099C6 6R099* TO220 PDF

    Diode SMD ED 98

    Abstract: SMD TRANSISTOR MARKING ed transistor smd marking ND PG-TO-263-3-2 PG-TO263-3-2 diode smd ED 21 SMD TRANSISTOR MARKING ME diode smd ed 18 diode smd ed 02 Energy Me
    Text: IPB60R099CPA CoolMOS Power Transistor Product Summary V DS R DS on ,max Q g,typ ed nd me ns om sig ec de tr w e no rn fo Features 600 V 0.105 Ω 60 nC • Worldwide best Rds,on in TO263 PG-TO263-3-2 • Ultra low gate charge • Extreme dv/dt rated • High peak current capability


    Original
    IPB60R099CPA PG-TO263-3-2 6R099A PG-TO262-3-1 PG-TO220-3-1 PG-TO247-3-41 Diode SMD ED 98 SMD TRANSISTOR MARKING ed transistor smd marking ND PG-TO-263-3-2 PG-TO263-3-2 diode smd ED 21 SMD TRANSISTOR MARKING ME diode smd ed 18 diode smd ed 02 Energy Me PDF

    PG-TO263-3-2

    Abstract: PG-TO-263-3-2 IPB60R099CPA 6R099 6R099A IPB60R199CPA IPI60R099CPA IPB60R199
    Text: IPB60R099CPA CoolMOS Power Transistor Product Summary V DS R DS on ,max Q g,typ 600 V 0.105 Ω 60 nC Features • Worldwide best Rds,on in TO263 PG-TO263-3-2 • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Automotive AEC Q101 qualified


    Original
    IPB60R099CPA PG-TO263-3-2 6R099A PG-TO262-3-1 PG-TO220-3-1 PG-TO247-3-41 PG-TO263-3-2 PG-TO-263-3-2 IPB60R099CPA 6R099 6R099A IPB60R199CPA IPI60R099CPA IPB60R199 PDF

    igbt welding machine scheme

    Abstract: ikw40n120h3 aircon l1 smd diode schottky code marking SJ transistor marking code 12W SOT-23 24V application with ice3ar0680jz induction cooker FAULT FINDING IPW65R041 IGW40N60H3 SPW55N80C3
    Text: Power Management Selection Guide 2012 [ www.infineon.com/powermanagement ] [ www.infineon.com/PowerManagementICs ] We create Power Management We live Energy Efficiency Infineon, an innovation leader for Power Semiconductor and Energy Efficiency technologies is continually developing and


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    mosfet 6R199

    Abstract: 6R199 IPB60R199CPA IPB60R099CPA IPI60R099CPA IPP60R099CPA PG-TO-263-3-2 PG-TO263 6R199A
    Text: IPB60R199CPA CoolMOS Power Transistor Product Summary 600 V DS V 0.199 Ω R DS on ,max 33 Q g,typ nC Features • Lowest figure-of-merit Ron x Qg • Ultra low gate charge • Extreme dv/dt rated PG-TO263-3 • High peak current capability • Automotive AEC Q101 qualified


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    IPB60R199CPA PG-TO263-3 6R199A PG-TO262-3-1 PG-TO220-3-1 PG-TO247-3-41 mosfet 6R199 6R199 IPB60R199CPA IPB60R099CPA IPI60R099CPA IPP60R099CPA PG-TO-263-3-2 PG-TO263 6R199A PDF

    PG-TO262-3-1

    Abstract: 6R099 df RN transistor A93V IPB60R099CPA IPB60R199CPA IPI60R099CPA IPW60R099CPA PG-TO247-3-41 6R099A
    Text: IPI60R099CPA CoolMOSTM Power Transistor Product Summary V DS R DS on ,max Q g,typ ed nd me ns om sig ec de tr w e no rn fo Features 600 V 0.105 Ω 60 nC • Worldwide best Rds,on in TO262 • Ultra low gate charge PG-TO262-3-1 • Extreme dv/dt rated • High peak current capability


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    IPI60R099CPA PG-TO262-3-1 6R099A PG-TO263-3-2 PG-TO220-3-1 PG-TO247-3-41 PG-TO262-3-1 6R099 df RN transistor A93V IPB60R099CPA IPB60R199CPA IPI60R099CPA IPW60R099CPA PG-TO247-3-41 6R099A PDF

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


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    element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor PDF

    6R299A

    Abstract: 6r299 IPB60R099CPA IPC60R075 IPC60R075CPA IPB60R199CPA IPI60R099CPA IPP60R099CPA DS1058 IPB60R299CPA
    Text: IPB60R299CPA CoolMOSTM Power Transistor Product Summary 600 V DS V 0.299 Ω R DS on ,max 22 Q g,typ nC Features • Lowest figure-of-merit Ron x Qg PG-TO263-3 • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Automotive AEC Q101 qualified


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    IPB60R299CPA PG-TO263-3 6R299A PG-TO262-3-1 PG-TO220-3-1 PG-TO247-3-41 6R299A 6r299 IPB60R099CPA IPC60R075 IPC60R075CPA IPB60R199CPA IPI60R099CPA IPP60R099CPA DS1058 IPB60R299CPA PDF

    6r099a

    Abstract: 6r099 DIODE ED 11
    Text: IPW60R099CPA CoolMOSTM Power Transistor Product Summary V DS R DS on ,max Q g,typ ed nd me ns om sig ec de tr w e no rn fo Features 600 V 0.105 Ω 60 nC • Lowest figure-of-merit RON x Qg • Ultra low gate charge • Extreme dv/dt rated PG-TO247-3 • High peak current capability


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    IPW60R099CPA 6R099A PG-TO247-3 PG-TO247-3 IPW60PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 PG-TO247-3-41 PG-TO247-3-41 6r099 DIODE ED 11 PDF

    6r099

    Abstract: df RN transistor
    Text: IPP60R099CPA CoolMOSTM Power Transistor Product Summary V DS R DS on ,max Features ed nd me ns om sig ec de tr w e no rn fo Q g,typ 600 V 0.105 Ω 60 nC • Worldwide best R ds,on in TO220 • Ultra low gate charge PG-TO220-3-1 • Extreme dv/dt rated • High peak current capability


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    IPP60R099CPA 6R099A PG-TO220-3-1 PG-TO220-3-1 APG-TO263-3-2 PG-TO262-3-1 PG-TO247-3-41 PG-TO247-3-41 6r099 df RN transistor PDF

    PX3544

    Abstract: PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J
    Text: Power Management Selection Guide – February 2010 [ www.infineon.com/PowerManagementDiscretes ] [ www.infineon.com/PowerManagementICs ] 2 Introduction The Leader in Energy Efficient Technologies for Power Management Efficient energy conversion is vital for an environmentally-friendly


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    lead519 B152-H9345-G2-X-7600 PX3544 PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J PDF

    IPW60R099CPA

    Abstract: PG-TO247 6R099A IPI60R099CPA IPB60R099CPA IPB60R199CPA PG-TO-247-3
    Text: IPW60R099CPA CoolMOSTM Power Transistor Product Summary V DS R DS on ,max Q g,typ 600 V 0.105 Ω 60 nC Features • Lowest figure-of-merit RON x Qg • Ultra low gate charge • Extreme dv/dt rated PG-TO247-3 • High peak current capability • Automotive AEC Q101 qualified


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    IPW60R099CPA PG-TO247-3 6R099A PG-TO262-3-1 PG-TO220-3-1 PG-TO247-3-41 IPW60R099CPA PG-TO247 6R099A IPI60R099CPA IPB60R099CPA IPB60R199CPA PG-TO-247-3 PDF

    IPP60R099CPA

    Abstract: IPB60R099CPA IPB60R199CPA PG-TO220-3 IPW60R045CPA 6R099A IPC60R075CPA
    Text: IPP60R099CPA CoolMOSTM Power Transistor Product Summary V DS R DS on ,max Q g,typ 600 V 0.105 Ω 60 nC Features • Worldwide best R ds,on in TO220 • Ultra low gate charge PG-TO220-3-1 • Extreme dv/dt rated • High peak current capability • Automotive AEC Q101 qualified


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    IPP60R099CPA PG-TO220-3-1 6R099A PG-TO262-3-1 PG-TO247-3-41 IPP60R099CPA IPB60R099CPA IPB60R199CPA PG-TO220-3 IPW60R045CPA 6R099A IPC60R075CPA PDF

    df RN transistor

    Abstract: 6R075P DIODE ED 26 6R075
    Text: IPW60R075CPA CoolMOSTM Power Transistor Product Summary V DS R DS on ,max Q g,typ ed nd me ns om sig ec de tr w e no rn fo Features 600 V 0.075 Ω 87 nC • Lowest figure-of-merit RON x Qg • Ultra low gate charge • Extreme dv/dt rated PG-TO247-3 • High peak current capability


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    IPW60R075CPA PG-TO247-3 6R075PA PG-TO247-3 IPPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 PG-TO247-3-41 PG-TO247-3-41 df RN transistor 6R075P DIODE ED 26 6R075 PDF

    600V igbt dc to dc buck converter

    Abstract: TRANSISTOR SMD CODE PACKAGE SOT89 bts 2140 1b data sheet TRANSISTOR SMD CODE PACKAGE SOT23 PSB 6970 HL V1.3 PEF 24628 E V1.2-G infineon psb 6970 PEF 4265 T V2.1 HT 1200-4 SLB 9635
    Text: Infineon Product Catalog for Distribution 2008 Infineon Product Catalog for Distribution 2008 Product Catalog for Distribution Ordering No. B192-H6780-G11-X-7600 Published by Infineon Technologies AG [ www.infineon.com ] [ www.infineon.com/distribution ]


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    B192-H6780-G11-X-7600 SP000008186 VDSL6100i-E 600V igbt dc to dc buck converter TRANSISTOR SMD CODE PACKAGE SOT89 bts 2140 1b data sheet TRANSISTOR SMD CODE PACKAGE SOT23 PSB 6970 HL V1.3 PEF 24628 E V1.2-G infineon psb 6970 PEF 4265 T V2.1 HT 1200-4 SLB 9635 PDF