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    IPB60R199 Price and Stock

    Infineon Technologies AG IPB60R199CPATMA1

    MOSFET N-CH 650V 16A TO263-3
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    DigiKey IPB60R199CPATMA1 Cut Tape 4,238 1
    • 1 $4.44
    • 10 $2.937
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    • 1000 $1.71668
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    IPB60R199CPATMA1 Digi-Reel 4,238 1
    • 1 $4.44
    • 10 $2.937
    • 100 $4.44
    • 1000 $1.71668
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    IPB60R199CPATMA1 Reel 4,000 1,000
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    Mouser Electronics IPB60R199CPATMA1 1,992
    • 1 $3.47
    • 10 $2.59
    • 100 $1.9
    • 1000 $1.62
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    TME IPB60R199CPATMA1 1
    • 1 $3.44
    • 10 $2.36
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    EBV Elektronik IPB60R199CPATMA1 16 Weeks 1,000
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    Infineon Technologies AG IPB60R199CPAATMA1

    MOSFET N-CH 600V 16A D2PAK
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    DigiKey IPB60R199CPAATMA1 Reel 1,000
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    EBV Elektronik IPB60R199CPAATMA1 71 Weeks 1,000
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    Infineon Technologies AG IPB60R199CPAXT

    Trans MOSFET N-CH 600V 16A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB60R199CPAATMA1)
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    Avnet Americas IPB60R199CPAXT Reel 1,000
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    Infineon Technologies AG IPB60R199CPXT

    Trans MOSFET N-CH 650V 16A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB60R199CPATMA1)
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    Avnet Americas IPB60R199CPXT Reel 15 Weeks 1,000
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    Infineon Technologies AG IPB60R199CP

    MOSFETs N-Ch 650V 16A D2PAK-2 CoolMOS CP
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    Mouser Electronics IPB60R199CP 935
    • 1 $3.47
    • 10 $2.91
    • 100 $2.36
    • 1000 $1.79
    • 10000 $1.78
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    Onlinecomponents.com IPB60R199CP 788
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    • 100 $3.38
    • 1000 $2.76
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    Quest Components IPB60R199CP 16
    • 1 $8.352
    • 10 $6.1248
    • 100 $5.568
    • 1000 $5.568
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    Win Source Electronics IPB60R199CP 4,521
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    • 100 $2.174
    • 1000 $1.884
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    IPB60R199 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IPB60R199CP Infineon Technologies CoolMOS Power Transistor Original PDF
    IPB60R199CPAATMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH TO263-3 Original PDF
    IPB60R199CPATMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V 16A TO-263 Original PDF

    IPB60R199 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    mosfet 6R199

    Abstract: 6R199 IPB60R199CPA IPB60R099CPA IPI60R099CPA IPP60R099CPA PG-TO-263-3-2 PG-TO263 6R199A
    Text: IPB60R199CPA CoolMOS Power Transistor Product Summary 600 V DS V 0.199 Ω R DS on ,max 33 Q g,typ nC Features • Lowest figure-of-merit Ron x Qg • Ultra low gate charge • Extreme dv/dt rated PG-TO263-3 • High peak current capability • Automotive AEC Q101 qualified


    Original     		PDF IPB60R199CPA PG-TO263-3 6R199A PG-TO262-3-1 PG-TO220-3-1 PG-TO247-3-41 mosfet 6R199 6R199 IPB60R199CPA IPB60R099CPA IPI60R099CPA IPP60R099CPA PG-TO-263-3-2 PG-TO263 6R199A

    6R199P

    Abstract: to-263-3 smd transistor marking DF
    Text: IPB60R199CP CoolMOS Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.199 Ω R DS on ,max • Ultra low gate charge V Q g,typ 32 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPB60R199CP PG-TO263 SP000223256 6R199P 6R199P to-263-3 smd transistor marking DF

    marking code ff p SMD Transistor

    Abstract: 6R199P
    Text: IPB60R199CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.199 Ω R DS on ,max • Ultra low gate charge V Q g,typ 33 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPB60R199CP PG-TO263 SP000223256 6R199P marking code ff p SMD Transistor 6R199P

    Untitled

    Abstract: No abstract text available
    Text: IPB60R199CP CoolMOS Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.199 Ω R DS on ,max • Ultra low gate charge V 32 Q g,typ nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPB60R199CP PG-TO263 SP000223256 6R199P

    6R199P

    Abstract: 6R199 6R199P DATA SHEET IPB60R199 mosfet 6R199 smd marking code cp IPB60R199CP SMD MARKING CODE 102 JESD22 SP000223256
    Text: IPB60R199CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.199 Ω R DS on ,max • Ultra low gate charge V Q g,typ 33 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPB60R199CP PG-TO263 SP000223256 6R199P 6R199P 6R199 6R199P DATA SHEET IPB60R199 mosfet 6R199 smd marking code cp IPB60R199CP SMD MARKING CODE 102 JESD22 SP000223256

    6R199P

    Abstract: IPB60R199CP 6R199 6R199P mosfet mosfet 6R199 SP000223256 marking code ff p SMD Transistor JESD22 marking code ff SMD Transistor MOSFET TRANSISTOR SMD MARKING CODE 7
    Text: IPB60R199CP CoolMOS Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.199 Ω R DS on ,max • Ultra low gate charge V Q g,typ 33 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPB60R199CP PG-TO263 SP000223256 6R199P 6R199P IPB60R199CP 6R199 6R199P mosfet mosfet 6R199 SP000223256 marking code ff p SMD Transistor JESD22 marking code ff SMD Transistor MOSFET TRANSISTOR SMD MARKING CODE 7

    DIODE ED 99

    Abstract: mosfet 6R199 diode smd ED 35 transistor smd marking ND IPB60R199CPA smd transistor ds 65 SMD TRANSISTOR MARKING ed me smd transistor SMD TRANSISTOR MARKING ME smd diode EC
    Text: IPB60R199CPA CoolMOS Power Transistor Product Summary 600 V DS 0.199 Ω R DS on ,max 33 Q g,typ ed nd me ns om sig ec de tr w e no rn fo Features V nC • Lowest figure-of-merit Ron x Qg • Ultra low gate charge • Extreme dv/dt rated PG-TO263-3 • High peak current capability


    Original     		PDF IPB60R199CPA 6R199A PG-TO263-3 PG-TO263-3 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 PG-TO247-3-41 PG-TO247-3-41 DIODE ED 99 mosfet 6R199 diode smd ED 35 transistor smd marking ND IPB60R199CPA smd transistor ds 65 SMD TRANSISTOR MARKING ed me smd transistor SMD TRANSISTOR MARKING ME smd diode EC

    zd107

    Abstract: zd107 transistor IPB60R199 88EM8041 90w flyback GBL406 LTV817B t101a zener diode cross reference ZD104
    Text: Cover 88EM8040/88EM8041 Power Factor Correction Controller for Flyback Topology Datasheet Customer Use Only Doc. No. MV-S104983-01, Rev. A October 5, 2009 Marvell. Moving Forward Faster Document Classification: Proprietary 88EM8040/88EM8041 Datasheet Document Conventions


    Original     		PDF 88EM8040/88EM8041 MV-S104983-01, MV-S104983-01 zd107 zd107 transistor IPB60R199 88EM8041 90w flyback GBL406 LTV817B t101a zener diode cross reference ZD104

    igbt welding machine scheme

    Abstract: ikw40n120h3 aircon l1 smd diode schottky code marking SJ transistor marking code 12W SOT-23 24V application with ice3ar0680jz induction cooker FAULT FINDING IPW65R041 IGW40N60H3 SPW55N80C3
    Text: Power Management Selection Guide 2012 [ www.infineon.com/powermanagement ] [ www.infineon.com/PowerManagementICs ] We create Power Management We live Energy Efficiency Infineon, an innovation leader for Power Semiconductor and Energy Efficiency technologies is continually developing and


    Original     		PDF

    3bs02

    Abstract: 2bs01 08P06P TDA 16888 ICE2pcs02 tda16846 ICE3B1565J mosfet 18p06p TDA4605 ICE3B0365J
    Text: MOSFETs, PWM Control ICs, SMPS ICs, Gate Driver, PFC ICs, Silicon Carbide High Voltage Schottky Diodes February 2008 Power Management & Supply Selection Guide www.infineon.com/powermanagement Introduction I n f i n e o n ’ s P o w e r S e mi c o n d u c t o r p h i l o s o p h y is rather


    Original     		PDF Infineo866-95 B152-H8926-G2-X-7600 NB08-1069 3bs02 2bs01 08P06P TDA 16888 ICE2pcs02 tda16846 ICE3B1565J mosfet 18p06p TDA4605 ICE3B0365J

    PG-TO262-3-1

    Abstract: 6R099 df RN transistor A93V IPB60R099CPA IPB60R199CPA IPI60R099CPA IPW60R099CPA PG-TO247-3-41 6R099A
    Text: IPI60R099CPA CoolMOSTM Power Transistor Product Summary V DS R DS on ,max Q g,typ ed nd me ns om sig ec de tr w e no rn fo Features 600 V 0.105 Ω 60 nC • Worldwide best Rds,on in TO262 • Ultra low gate charge PG-TO262-3-1 • Extreme dv/dt rated • High peak current capability


    Original     		PDF IPI60R099CPA PG-TO262-3-1 6R099A PG-TO263-3-2 PG-TO220-3-1 PG-TO247-3-41 PG-TO262-3-1 6R099 df RN transistor A93V IPB60R099CPA IPB60R199CPA IPI60R099CPA IPW60R099CPA PG-TO247-3-41 6R099A

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor

    6R299A

    Abstract: 6r299 IPB60R099CPA IPC60R075 IPC60R075CPA IPB60R199CPA IPI60R099CPA IPP60R099CPA DS1058 IPB60R299CPA
    Text: IPB60R299CPA CoolMOSTM Power Transistor Product Summary 600 V DS V 0.299 Ω R DS on ,max 22 Q g,typ nC Features • Lowest figure-of-merit Ron x Qg PG-TO263-3 • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Automotive AEC Q101 qualified


    Original     		PDF IPB60R299CPA PG-TO263-3 6R299A PG-TO262-3-1 PG-TO220-3-1 PG-TO247-3-41 6R299A 6r299 IPB60R099CPA IPC60R075 IPC60R075CPA IPB60R199CPA IPI60R099CPA IPP60R099CPA DS1058 IPB60R299CPA

    6r099a

    Abstract: 6r099 DIODE ED 11
    Text: IPW60R099CPA CoolMOSTM Power Transistor Product Summary V DS R DS on ,max Q g,typ ed nd me ns om sig ec de tr w e no rn fo Features 600 V 0.105 Ω 60 nC • Lowest figure-of-merit RON x Qg • Ultra low gate charge • Extreme dv/dt rated PG-TO247-3 • High peak current capability


    Original     		PDF IPW60R099CPA 6R099A PG-TO247-3 PG-TO247-3 IPW60PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 PG-TO247-3-41 PG-TO247-3-41 6r099 DIODE ED 11

    PX3544

    Abstract: PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J
    Text: Power Management Selection Guide – February 2010 [ www.infineon.com/PowerManagementDiscretes ] [ www.infineon.com/PowerManagementICs ] 2 Introduction The Leader in Energy Efficient Technologies for Power Management Efficient energy conversion is vital for an environmentally-friendly


    Original     		PDF lead519 B152-H9345-G2-X-7600 PX3544 PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J

    IPW60R099CPA

    Abstract: PG-TO247 6R099A IPI60R099CPA IPB60R099CPA IPB60R199CPA PG-TO-247-3
    Text: IPW60R099CPA CoolMOSTM Power Transistor Product Summary V DS R DS on ,max Q g,typ 600 V 0.105 Ω 60 nC Features • Lowest figure-of-merit RON x Qg • Ultra low gate charge • Extreme dv/dt rated PG-TO247-3 • High peak current capability • Automotive AEC Q101 qualified


    Original     		PDF IPW60R099CPA PG-TO247-3 6R099A PG-TO262-3-1 PG-TO220-3-1 PG-TO247-3-41 IPW60R099CPA PG-TO247 6R099A IPI60R099CPA IPB60R099CPA IPB60R199CPA PG-TO-247-3

    IPP60R099CPA

    Abstract: IPB60R099CPA IPB60R199CPA PG-TO220-3 IPW60R045CPA 6R099A IPC60R075CPA
    Text: IPP60R099CPA CoolMOSTM Power Transistor Product Summary V DS R DS on ,max Q g,typ 600 V 0.105 Ω 60 nC Features • Worldwide best R ds,on in TO220 • Ultra low gate charge PG-TO220-3-1 • Extreme dv/dt rated • High peak current capability • Automotive AEC Q101 qualified


    Original     		PDF IPP60R099CPA PG-TO220-3-1 6R099A PG-TO262-3-1 PG-TO247-3-41 IPP60R099CPA IPB60R099CPA IPB60R199CPA PG-TO220-3 IPW60R045CPA 6R099A IPC60R075CPA

    df RN transistor

    Abstract: 6R075P DIODE ED 26 6R075
    Text: IPW60R075CPA CoolMOSTM Power Transistor Product Summary V DS R DS on ,max Q g,typ ed nd me ns om sig ec de tr w e no rn fo Features 600 V 0.075 Ω 87 nC • Lowest figure-of-merit RON x Qg • Ultra low gate charge • Extreme dv/dt rated PG-TO247-3 • High peak current capability


    Original     		PDF IPW60R075CPA PG-TO247-3 6R075PA PG-TO247-3 IPPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 PG-TO247-3-41 PG-TO247-3-41 df RN transistor 6R075P DIODE ED 26 6R075

    600V igbt dc to dc buck converter

    Abstract: TRANSISTOR SMD CODE PACKAGE SOT89 bts 2140 1b data sheet TRANSISTOR SMD CODE PACKAGE SOT23 PSB 6970 HL V1.3 PEF 24628 E V1.2-G infineon psb 6970 PEF 4265 T V2.1 HT 1200-4 SLB 9635
    Text: Infineon Product Catalog for Distribution 2008 Infineon Product Catalog for Distribution 2008 Product Catalog for Distribution Ordering No. B192-H6780-G11-X-7600 Published by Infineon Technologies AG [ www.infineon.com ] [ www.infineon.com/distribution ]


    Original     		PDF B192-H6780-G11-X-7600 SP000008186 VDSL6100i-E 600V igbt dc to dc buck converter TRANSISTOR SMD CODE PACKAGE SOT89 bts 2140 1b data sheet TRANSISTOR SMD CODE PACKAGE SOT23 PSB 6970 HL V1.3 PEF 24628 E V1.2-G infineon psb 6970 PEF 4265 T V2.1 HT 1200-4 SLB 9635

    ICE3B0365J

    Abstract: ICE3BR4765J TDA16888 ICE2A765P2 ICE2PCS01G ICE1PCS02G ICE2B0565 ICE1PCS02 ICE2pcs02 IPI60R099CP
    Text: MOSFETs, PWM Control ICs, SMPS ICs, Gate Driver, PFC ICs, Silicon Carbide High Voltage Schottky Diodes February 2008 Power Management & Supply Pocket Guide www.infineon.com/powermanagement N-Channel MOSFETs 500V … 900V CoolMOSTM Partnumber RDS on , ID, Qg(typ)


    Original     		PDF SPP21N50C3 SPA21N50C3 SPI21N50C3 SPP16N50C3 SPA16N50C3 SPI16N50C3 SPW21N50C3 SPP12N50C3 SPA12N50C3 SPI12N50C3 ICE3B0365J ICE3BR4765J TDA16888 ICE2A765P2 ICE2PCS01G ICE1PCS02G ICE2B0565 ICE1PCS02 ICE2pcs02 IPI60R099CP

    Diode SMD ED 98

    Abstract: diode smd ed 06 SMD TRANSISTOR MARKING ed SMD TRANSISTOR MARKING ME transistor smd marking ND smd transistor ed transistor smd marking mE smd diode ED 46 smd diode ED me smd transistor
    Text: IPB60R299CPA CoolMOSTM Power Transistor Product Summary 600 V DS 0.299 Ω R DS on ,max 22 Q g,typ ed nd me ns om sig ec de tr w e no rn fo Features V nC • Lowest figure-of-merit Ron x Qg PG-TO263-3 • Ultra low gate charge • Extreme dv/dt rated • High peak current capability


    Original     		PDF IPB60R299CPA 6R299A PG-TO263-3 PG-TO263-3 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 PG-TO247-3-41 PG-TO247-3-41 Diode SMD ED 98 diode smd ed 06 SMD TRANSISTOR MARKING ed SMD TRANSISTOR MARKING ME transistor smd marking ND smd transistor ed transistor smd marking mE smd diode ED 46 smd diode ED me smd transistor

    6r045a

    Abstract: IPW60R045CPA 6r045 mosfet 6r045A IPW60R099CPA IPB60R099CPA IPB60R199CPA PG-TO-247-3 PG-TO247
    Text: IPW60R045CPA CoolMOS Power Transistor Product Summary V DS R DS on ,max Q g,typ 600 V 0.045 Ω 150 nC Features • Worldwide best R ds,on in TO247 • Ultra low gate charge PG-TO247-3 • Extreme dv/dt rated • High peak current capability • Automotive AEC Q101 qualified


    Original     		PDF IPW60R045CPA PG-TO247-3 6R045A PG-TO262-3-1 PG-TO220-3-1 PG-TO247-3-41 6r045a IPW60R045CPA 6r045 mosfet 6r045A IPW60R099CPA IPB60R099CPA IPB60R199CPA PG-TO-247-3 PG-TO247

    ipb60r099cpa

    Abstract: IPI60R099CPA 6R099 TO262-3-1 IPB60R199CPA IPW60R045CP PG-TO262-3-1
    Text: IPI60R099CPA CoolMOSTM Power Transistor Product Summary V DS R DS on ,max Q g,typ 600 V 0.105 Ω 60 nC Features • Worldwide best Rds,on in TO262 • Ultra low gate charge PG-TO262-3-1 • Extreme dv/dt rated • High peak current capability • Automotive AEC Q101 qualified


    Original     		PDF IPI60R099CPA PG-TO262-3-1 6R099A PG-TO220-3-1 PG-TO247-3-41 ipb60r099cpa IPI60R099CPA 6R099 TO262-3-1 IPB60R199CPA IPW60R045CP PG-TO262-3-1

    Diode SMD ED 98

    Abstract: SMD TRANSISTOR MARKING ed transistor smd marking ND PG-TO-263-3-2 PG-TO263-3-2 diode smd ED 21 SMD TRANSISTOR MARKING ME diode smd ed 18 diode smd ed 02 Energy Me
    Text: IPB60R099CPA CoolMOS Power Transistor Product Summary V DS R DS on ,max Q g,typ ed nd me ns om sig ec de tr w e no rn fo Features 600 V 0.105 Ω 60 nC • Worldwide best Rds,on in TO263 PG-TO263-3-2 • Ultra low gate charge • Extreme dv/dt rated • High peak current capability


    Original     		PDF IPB60R099CPA PG-TO263-3-2 6R099A PG-TO262-3-1 PG-TO220-3-1 PG-TO247-3-41 Diode SMD ED 98 SMD TRANSISTOR MARKING ed transistor smd marking ND PG-TO-263-3-2 PG-TO263-3-2 diode smd ED 21 SMD TRANSISTOR MARKING ME diode smd ed 18 diode smd ed 02 Energy Me