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    Infineon Technologies AG IPB108N15N3GATMA1

    MOSFET N-CH 150V 83A D2PAK
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    DigiKey IPB108N15N3GATMA1 Digi-Reel 2,902 1
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    Avnet Americas IPB108N15N3GATMA1 Ammo Pack 16 Weeks, 4 Days 1
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    Component Electronics, Inc IPB108N15N3GATMA1 100
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    Win Source Electronics IPB108N15N3GATMA1 79,840
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    Infineon Technologies AG IPB180N04S4H0ATMA1

    MOSFET N-CH 40V 180A TO263-7-3
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    IPB180N04S4H0ATMA1 Reel 1,000 1,000
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    Arrow Electronics IPB180N04S4H0ATMA1 2,000 12 Weeks 1,000
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    Rochester Electronics IPB180N04S4H0ATMA1 1,415 1
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    TME IPB180N04S4H0ATMA1 1
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    EBV Elektronik IPB180N04S4H0ATMA1 6,000 13 Weeks 1,000
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    New Advantage Corporation IPB180N04S4H0ATMA1 5,000 1
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    Infineon Technologies AG IPB120N04S401ATMA1

    MOSFET N-CH 40V 120A D2PAK
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    DigiKey IPB120N04S401ATMA1 Digi-Reel 1,813 1
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    IPB120N04S401ATMA1 Cut Tape 1,813 1
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    IPB120N04S401ATMA1 Reel 1,000 1,000
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    Bristol Electronics IPB120N04S401ATMA1 154
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    Rochester Electronics IPB120N04S401ATMA1 64 1
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    Infineon Technologies AG IPB180N10S403ATMA1

    MOSFET N-CH 100V 180A TO263-7
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    DigiKey IPB180N10S403ATMA1 Digi-Reel 1,144 1
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    IPB180N10S403ATMA1 Cut Tape 1,144 1
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    Infineon Technologies AG IPB120N08S404ATMA1

    MOSFET N-CH 80V 120A D2PAK
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    DigiKey IPB120N08S404ATMA1 Digi-Reel 993 1
    • 1 $4.88
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    IPB120N08S404ATMA1 Cut Tape 993 1
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    Rochester Electronics IPB120N08S404ATMA1 32,133 1
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    Find more IPB1 price and stock on Findchips.com

    IPB1 Datasheets (147)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IPB100N04S2-04 Infineon Technologies OptiMOS Power-Transistor Original PDF
    IPB100N04S204ATMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 100A TO263-3 Original PDF
    IPB100N04S204ATMA4 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 100A TO263-3 Original PDF
    IPB100N04S2L-03 Infineon Technologies OptiMOS Power-Transistor Original PDF
    IPB100N04S2L03ATMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 100A TO263-3 Original PDF
    IPB100N04S2L03ATMA2 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 100A TO263-3 Original PDF
    IPB100N04S3-03 Infineon Technologies Single: N-Channel 40V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS -T; VDS (max): 40.0 V; RDS (on) (max) (@10V): 2.5 mOhm; ID (max): 100.0 A; RthJC (max): 0.7 K/W; Original PDF
    IPB100N04S303ATMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 100A TO263-3 Original PDF
    IPB100N04S4-H2 Infineon Technologies FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 100A TO263-3-2 Original PDF
    IPB100N04S4H2ATMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 100A TO263-3-2 Original PDF
    IPB100N06S2-05 Infineon Technologies Single: N-Channel 55V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS ; VDS (max): 55.0 V; RDS (on) (max) (@10V): 4.7 mOhm; ID (max): 100.0 A; RthJC (max): 0.5 K/W; Original PDF
    IPB100N06S205ATMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 55V 100A TO263-3 Original PDF
    IPB100N06S205ATMA4 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 55V 100A TO263-3 Original PDF
    IPB100N06S2L-05 Infineon Technologies Single: N-Channel 55V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS ; VDS (max): 55.0 V; RDS (on) (max) (@10V): 4.4 mOhm; ID (max): 100.0 A; RthJC (max): 0.5 K/W; Original PDF
    IPB100N06S2L05ATMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 55V 100A TO263-3 Original PDF
    IPB100N06S2L05ATMA2 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 55V 100A TO263-3 Original PDF
    IPB100N06S3-03 Infineon Technologies Single: N-Channel 55V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS -T; VDS (max): 55.0 V; RDS (on) (max) (@10V): 3.0 mOhm; ID (max): 100.0 A; RthJC (max): 0.5 K/W; Original PDF
    IPB100N06S3-03 Infineon Technologies OptiMOS -T Power-Transistor Original PDF
    IPB100N06S3-04 Infineon Technologies Single: N-Channel 55V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS -T; VDS (max): 55.0 V; RDS (on) (max) (@10V): 4.1 mOhm; ID (max): 100.0 A; RthJC (max): 0.7 K/W; Original PDF
    IPB100N06S3L-03 Infineon Technologies Single: N-Channel 55V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS -T; VDS (max): 55.0 V; RDS (on) (max) (@10V): 2.7 mOhm; ID (max): 100.0 A; RthJC (max): 0.5 K/W; Original PDF
    ...

    IPB1 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    PN04L03

    Abstract: smd diode code gs Application Note ANPS071E ANPS071E marking CODE R SMD DIODE smd diode marking 77 SMD MARKING CODE SMD MARKING CODE 102 smd TR marking code G11 TRANSISTOR SMD MARKING CODE 42
    Text: IPB100N04S2L-03 IPP100N04S2L-03 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 40 V R DS on ,max (SMD version) 3.0 mΩ ID 100 A • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		IPB100N04S2L-03 IPP100N04S2L-03 PG-TO263-3-2 PG-TO220-3-1 SP0002-19065 PN04L03 PN04L03 smd diode code gs Application Note ANPS071E ANPS071E marking CODE R SMD DIODE smd diode marking 77 SMD MARKING CODE SMD MARKING CODE 102 smd TR marking code G11 TRANSISTOR SMD MARKING CODE 42 PDF

    120N06N

    Abstract: 120N06 IPB120N06N PG-TO220-3 ISS 99 diode ipp120n06ng
    Text: IPB120N06N G OptiMOS Power-Transistor IPP120N06N G Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - normal level R DS on ,max 60 11.7 SMDversion ID 75 V mΩ A • 175 °C operating temperature


    Original     		IPB120N06N IPP120N06N P-TO220-3-1 P-TO263-3-2 120N06N 120N06N 120N06 PG-TO220-3 ISS 99 diode ipp120n06ng PDF

    16cn10n

    Abstract: 16cn10 IPP16CN10N D53A PG-TO220-3 16CN1
    Text: OptiMOS 2 Power-Transistor IPB16CN10N G IPD16CN10N G IPI16CN10N G IPP16CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 16 mΩ ID 53 A • Very low on-resistance R DS(on)


    Original     		IPB16CN10N IPI16CN10N IPD16CN10N IPP16CN10N PG-TO263-3 PG-TO252-3 16cn10n 16cn10 D53A PG-TO220-3 16CN1 PDF

    B581C

    Abstract: No abstract text available
    Text: DATA SHEET_ BIPOLAR DIGITAL INTEGRATED CIRCUIT ¿xPB1508GV 3 GHz INPUT DIVIDE BY 2 PRESCALER IC FOR DBS TUNERS /¿PB1508GV is a 3.0 GHz input divide by 2 prescaler IC for DBS tuner applications. ¿¿PB1508GV can make VHF/UHF band PLL frequency synthesizer apply to DBS/ECS tuners. /iPB1508G V is a shrink package version of


    OCR Scan     		uPB1508GV PB1508GV /iPB1508G PB584G B581C PDF

    IPB120N06N

    Abstract: 120N06N IPP120N06N IEC61249-2-21 PG-TO220-3 SMD diode D94
    Text: IPB120N06N G OptiMOS Power-Transistor IPP120N06N G Product Summary Features 60 V DS • For fast switching converters and sync. rectification • N-channel enhancement - normal level R DS on ,max 11.7 SMDversion 75 ID V mΩ A • 175 °C operating temperature


    Original     		IPB120N06N IPP120N06N IEC61249-2-21 P-TO220-3-1 P-TO263-3-2 120N06N 120N06N IEC61249-2-21 PG-TO220-3 SMD diode D94 PDF

    14N03LA

    Abstract: 14n03 14N03L GD 364 IPB14N03LA IPI14N03LA IPP14N03LA
    Text: IPB14N03LA IPI14N03LA, IPP14N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • N-channel V DS 25 V R DS on ,max (SMD version) 13.6 mΩ ID 30 A • Logic level • Excellent gate charge x R DS(on) product (FOM)


    Original     		IPB14N03LA IPI14N03LA, IPP14N03LA P-TO263-3-2 P-TO262-3-1 P-TO220-3-1 Q67042-S4156 14N03LA 14N03LA 14n03 14N03L GD 364 IPB14N03LA IPI14N03LA IPP14N03LA PDF

    147N12N

    Abstract: No abstract text available
    Text: IPB144N12N3 G IPI147N12N3 G OptiMOSTM3 Power-Transistor IPP147N12N3 G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 120 V R DS(on),max 14.7 mΩ ID 56 A • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original     		IPB144N12N3 IPI147N12N3 IPP147N12N3 PG-TO263-3 PG-TO262-3 PG-TO220-3 144N12N 147N12N PDF

    107n20n

    Abstract: 110N20N IPB107N20N3 IPP110N20N3 G DSV80 D88 z IPI110N20N3 IPI110N20N3 G IEC61249-2-21 PG-TO220-3
    Text: IPB107N20N3 G IPP110N20N3 G IPI110N20N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 200 V R DS(on),max (TO263) 10.7 mΩ ID 88 A • Very low on-resistance R DS(on)


    Original     		IPB107N20N3 IPP110N20N3 IPI110N20N3 IEC61249-2-21 PG-TO263-3 PG-TO220-3 PG-TO262-3 107n20n 110N20N IPP110N20N3 G DSV80 D88 z IPI110N20N3 G IEC61249-2-21 PG-TO220-3 PDF

    12CN10N

    Abstract: IPI12CN10N IPP12CN10N PG-TO220-3 GS250 IPD12CN10
    Text: OptiMOS 2 Power-Transistor IPB12CN10N G IPD12CN10N G IPI12CN10N G IPP12CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 12.4 mΩ ID 67 A • Very low on-resistance R DS(on)


    Original     		IPB12CN10N IPI12CN10N IPD12CN10N IPP12CN10N PG-TO263-3 PG-TO252-3 12CN10N PG-TO220-3 GS250 IPD12CN10 PDF

    4N06H1

    Abstract: IPB180N06S4-H1 D180A PG-TO263-7-3 TO263-7 4N06 SMD Diode
    Text: IPB180N06S4-H1 OptiMOS -T2 Power-Transistor Product Summary V DS 60 V R DS on ,max 1.7 mΩ ID 180 A Features PG-TO263-7-3 • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant)


    Original     		IPB180N06S4-H1 PG-TO263-7-3 4N06H1 4N06H1 IPB180N06S4-H1 D180A PG-TO263-7-3 TO263-7 4N06 SMD Diode PDF

    10n03l

    Abstract: smd diode 36A 10N03 OPTIMOS ANPS071E IPB10N03L IPP10N03L IPB10N03L SMD
    Text: IPP10N03L IPB10N03L OptiMOS Buck converter series Product Summary Feature • N-Channel VDS 30 V • Logic Level RDS on max. SMD version 8.9 mΩ • Low On-Resistance RDS(on) ID 73 A • Excellent Gate Charge x RDS(on) product (FOM) P- TO263 -3-2 P- TO220 -3-1


    Original     		IPP10N03L IPB10N03L Q67042-S4040 10N03L Q67040-S4346 10n03l smd diode 36A 10N03 OPTIMOS ANPS071E IPB10N03L IPP10N03L IPB10N03L SMD PDF

    15n03l

    Abstract: 15N03 IPB15N03L ANPS071E IPP15N03L F42A
    Text: IPP15N03L IPB15N03L OptiMOS Buck converter series Product Summary Feature 30 • N-Channel VDS • Logic Level RDS on max. SMD version • Low On-Resistance RDS(on) ID • Excellent Gate Charge x RDS(on) product (FOM) P- TO263 -3-2 V 12.6 mΩ 42 A P- TO220 -3-1


    Original     		IPP15N03L IPB15N03L Q67042-S4039 15N03L Q67040-S4344 15n03l 15N03 IPB15N03L ANPS071E IPP15N03L F42A PDF

    3QN0402

    Abstract: PG-TO263-7-3 IPB180N04S3-02 ipb180n04
    Text: Preliminary Data Sheet OptiMOS -T Power-Transistor IPB180N04S3-02 Product Summary V DS 40 V R DS on 1.6 mΩ ID 180 A Features • N-channel - Enhancement mode PG-TO263-7-3 • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		IPB180N04S3-02 PG-TO263-7-3 3QN0402 14300pF 3900pF 710pF 245nC 210nC 3QN0402 PG-TO263-7-3 IPB180N04S3-02 ipb180n04 PDF

    marking D78

    Abstract: smd diode marking 78A
    Text: IPB110N06L G OptiMOS Power-Transistor IPP110N06L G Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - logic level R DS on ,max SMD version ID 60 V 11 mΩ 78 A • 175 °C operating temperature


    Original     		IPB110N06L IPP110N06L PG-TO263-3-2 P-TO263-3-2 110N06L P-TO220-3-1 marking D78 smd diode marking 78A PDF

    16cn10n

    Abstract: 16cn10 IPB16CN10N 16CN1
    Text: OptiMOS 2 Power-Transistor IPB16CN10N G IPD16CN10N G IPI16CN10N G IPP16CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 16 mΩ ID 53 A • Very low on-resistance R DS(on)


    Original     		IPB16CN10N IPI16CN10N IPD16CN10N IPP16CN10N PG-TO263-3 16CN10N 16cn10n 16cn10 16CN1 PDF

    16CNE8N

    Abstract: IPP16CNE8N
    Text: OptiMOS 2 Power-Transistor IPB16CNE8N G IPD16CNE8N G IPI16CNE8N G IPP16CNE8N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO252) 16 mΩ ID 53 A • Very low on-resistance R DS(on)


    Original     		IPB16CNE8N IPI16CNE8N IPD16CNE8N IPP16CNE8N PG-TO263-3 16CNE8N 16CNE8N PDF

    4N04H1

    Abstract: IPB160N04S4-H1 PG-TO263-7-3 A6300 ipb160n 73 marking
    Text: IPB160N04S4-H1 OptiMOS -T2 Power-Transistor Product Summary V DS 40 V R DS on 1.6 mW ID 160 A Features • N-channel - Enhancement mode PG-TO263-7-3 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant)


    Original     		IPB160N04S4-H1 PG-TO263-7-3 4N04H1 4N04H1 IPB160N04S4-H1 PG-TO263-7-3 A6300 ipb160n 73 marking PDF

    12CN10N

    Abstract: No abstract text available
    Text: IPB12CN10N G IPD12CN10N G IPI12CN10N G IPP12CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 100 V RDS(on),max (TO252) 12.4 mW ID • Very low on-resistance R DS(on)


    Original     		IPB12CN10N IPD12CN10N IPI12CN10N IPP12CN10N IEC61249-2-21 PG-TO263-3 12CN10N PDF

    4N06H1

    Abstract: IPP120N06S4-H1 marking H1 IPB120N06S4-H1 IPI120N06S4-H1 PG-TO263-3-2
    Text: IPB120N06S4-H1 IPI120N06S4-H1, IPP120N06S4-H1 OptiMOS -T2 Power-Transistor Product Summary V DS 60 V R DS on ,max (SMD version) 2.1 mΩ ID 120 A Features • N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 • AEC Q101 qualified • MSL1 up to 260°C peak reflow


    Original     		IPB120N06S4-H1 IPI120N06S4-H1, IPP120N06S4-H1 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4N06H1 IPI120N06S4-H1 4N06H1 IPP120N06S4-H1 marking H1 IPB120N06S4-H1 IPI120N06S4-H1 PG-TO263-3-2 PDF

    3PN0604

    Abstract: TRANSISTOR SMD MARKING CODE 04 IPB100N06S3-04 IPI100N06S3-04 IPP100N06S3-04 PG-TO263-3-2
    Text: IPB100N06S3-04 IPI100N06S3-04, IPP100N06S3-04 OptiMOS -T Power-Transistor Product Summary Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 4.1 mΩ ID 100 A • MSL1 up to 260°C peak reflow


    Original     		IPB100N06S3-04 IPI100N06S3-04, IPP100N06S3-04 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 SP0001-02220 3PN0604 3PN0604 TRANSISTOR SMD MARKING CODE 04 IPB100N06S3-04 IPI100N06S3-04 IPP100N06S3-04 PG-TO263-3-2 PDF

    marking eb5

    Abstract: diode marking eb5 IPP139N08N3 EB5 MARKING marking G9 i95B
    Text: IPP139N08N3 G IPI139N08N3 G IPB136N08N3 G "%&$!"# 3 Power-Transistor Product Summary Features 0 V 9H Q #451<6? B8978 6B5AE5>3 I CG9D389 >7 R  , ? >=1H, & Q ( @D9=9J54 D53 8>? <? 7I 6? B    3 ? >F5BD5BC J +&.   Y" ,- I9 6 Q  H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D ( & 


    Original     		IPP139N08N3 IPI139N08N3 IPB136N08N3 65AE5 marking eb5 diode marking eb5 EB5 MARKING marking G9 i95B PDF

    IPP17N25S3-100

    Abstract: No abstract text available
    Text: IPB17N25S3-100 IPP17N25S3-100 OptiMOS -T Power-Transistor Product Summary VDS 250 V RDS on ,max 100 mW ID 17 A Features PG-TO263-3-2 • N-channel - Enhancement mode PG-TO220-3-1 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		IPB17N25S3-100 IPP17N25S3-100 PG-TO263-3-2 PG-TO220-3-1 3N25100 IPP17N25S3-100 PDF

    107n20n

    Abstract: No abstract text available
    Text: IPB107N20N3 G IPP110N20N3 G IPI110N20N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 200 V RDS(on),max (TO263) 10.7 mW ID • Very low on-resistance R DS(on) 88 A


    Original     		IPB107N20N3 IPP110N20N3 IPI110N20N3 IEC61249-2-21 PG-TO263-3 PG-TO220-3 PG-TO262-3 107n20n PDF

    marking 6d

    Abstract: IPP147N12N
    Text: IPB144N12N3 G IPI147N12N3 G IPP147N12N3 G "%&$!"# 3 Power-Transistor Product Summary Features R 492 ?6= ?@ C>2 =6G6= R I46=6?E82 E6 492 C86 IR ;I"\[# AC@ 5F4E! '  V ;I )*( K R  - @ ?>2 I ),&/ Z" -. I; 7 R/ 6CJ =@ H @ ? C6D:DE 2 ?46 R ;I"\[#


    Original     		IPB144N12N3 IPI147N12N3 IPP147N12N3 marking 6d IPP147N12N PDF