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    3QN0402

    Abstract: PG-TO263-7-3 IPB180N04S3-02 ipb180n04
    Text: Preliminary Data Sheet OptiMOS -T Power-Transistor IPB180N04S3-02 Product Summary V DS 40 V R DS on 1.6 mΩ ID 180 A Features • N-channel - Enhancement mode PG-TO263-7-3 • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPB180N04S3-02 PG-TO263-7-3 3QN0402 14300pF 3900pF 710pF 245nC 210nC 3QN0402 PG-TO263-7-3 IPB180N04S3-02 ipb180n04

    3QN0402

    Abstract: IPB180N04S3-02 ANPS071E ipb180n04
    Text: IPB180N04S3-02 OptiMOS -T Power-Transistor Product Summary V DS 40 V R DS on 1.5 mΩ ID 180 A Features • N-channel - Enhancement mode PG-TO263-7-3 • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant)


    Original     		PDF IPB180N04S3-02 PG-TO263-7-3 3QN0402 3QN0402 IPB180N04S3-02 ANPS071E ipb180n04

    3QN0402

    Abstract: DD32
    Text: Preliminary Data Sheet OptiMOS -T Power-Transistor IPB180N04S3-02 Product Summary Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified V DS 40 V R DS on 1.6 mΩ ID 180 A • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPB180N04S3-02 PG-TO263-7-3 3QN0402 14300pF 3900pF 710pF 245nC 3QN0402 DD32