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    DD32 Search Results

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    DD32 Price and Stock

    YAGEO Corporation UDD32C12L01

    TVS DIODE 12VWM 28.6VC SOD323
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    DigiKey UDD32C12L01 Digi-Reel 6,880 1
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    UDD32C12L01 Cut Tape 6,880 1
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    UDD32C12L01 Reel 6,000 3,000
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    Avnet Americas UDD32C12L01 Ammo Pack 23 Weeks, 5 Days 1
    • 1 $0.426
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    UDD32C12L01 Reel 28 Weeks 15,000
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    Newark UDD32C12L01 Cut Tape 15,000 1
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    UDD32C12L01 Reel 15,000
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    TTI UDD32C12L01 Reel 15,000
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    TME UDD32C12L01 1
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    Avnet Abacus UDD32C12L01 34 Weeks 15,000
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    Microchip Technology Inc AVR32DD32T-I-RXB

    32KB, 4KB RAM, 32P, 24MHZ, MVIO,
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    DigiKey AVR32DD32T-I-RXB Cut Tape 4,995 1
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    AVR32DD32T-I-RXB Digi-Reel 4,995 1
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    YAGEO Corporation SDD32C18L01

    TVS DIODE 18VWM 40VC SOD323
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    DigiKey SDD32C18L01 Reel 3,000 3,000
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    SDD32C18L01 Digi-Reel 3,000 1
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    SDD32C18L01 Cut Tape 3,000 1
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    TME SDD32C18L01 1
    • 1 $0.445
    • 10 $0.223
    • 100 $0.127
    • 1000 $0.103
    • 10000 $0.086
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    Avnet Abacus SDD32C18L01 34 Weeks 15,000
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    Microchip Technology Inc AVR64DD32T-I-PT

    64KB, 8KB RAM, 32P, 24MHZ, MVIO,
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    DigiKey AVR64DD32T-I-PT Digi-Reel 1,035 1
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    AVR64DD32T-I-PT Cut Tape 1,035 1
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    Microchip Technology Inc AVR32DD32T-E-PT

    32KB, 4KB RAM, 32P, 24MHZ, MVIO,
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    DigiKey AVR32DD32T-E-PT Digi-Reel 505 1
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    AVR32DD32T-E-PT Cut Tape 505 1
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    DD32 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors bbS3T31 DD32EQ5 TMfi HIAPX Product specification NPN 4 GHz wideband transistor crystal X3A-BFQ34 N AUER PHILIPS/MSCRETE DESCRIPTION b^E ]> MECHANICAL DATA NPN crystal used in BFQ34T SOT37 , BFQ34 (SOT172) and BFG35 (SOT223). Crystals are supplied as whole


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    bbS3T31 DD32EQ5 X3A-BFQ34 BFQ34T BFQ34 OT172) BFG35 OT223) X3A-BFQ34 PDF

    Untitled

    Abstract: No abstract text available
    Text: N AHER PHILIPS/DISCRETE bbS3R31 DD32S7H 17fl *A P X b'lE D Philips Semiconductors Preliminary specification W ideband amplifier module OM2082/86 DESCRIPTION A two-stage wideband amplifier in hybrid integrated circuit form on a thin-film substrate. The device is intended for use


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    bbS3R31 DD32S7H OM2082/86 PDF

    Untitled

    Abstract: No abstract text available
    Text: N AUER P H IL IP S /D IS C R E T E bTE D bb53R31 DD325T1 257 H A P X Philips Semiconductors Preliminary specification Wideband amplifier module OM2083/86 DESCRIPTION A three-stage wideband amplifier in hybrid integrated circuit form on a thin-film substrate. The device is intended for use


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    bb53R31 DD325T1 OM2083/86 PDF

    BGY60

    Abstract: DIN45004B 386 amplifier philips vhf amplifier module BI 340
    Text: bbSBTBl Philips Sem iconductors Hybrid VHF push-pull amplifier module DD32347 3ÖÖ N AMER PHILIPS / D I S C R E T E PIN CONFIGURATION • Extremely low noise 1 input pre-stage • Silicon nitride passivation 2 common • Rugged construction 3 common • TiPtAu metallized crystals ensure


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    bb53T31 BGY60 -SOT115D -60dB DIN45004B; BGY60 DIN45004B 386 amplifier philips vhf amplifier module BI 340 PDF

    BGD504

    Abstract: BGD502 DIN45004B 550 mhz catv power doubler
    Text: bbS3T31 Philips Semiconductors DD3231b 7Q4 CATV power doubler amplifier modules IAPX Product specification BGD502;BGD504 N AUER PH ILI PS/DISCRE TE PINNING -SO T 115C FE A T U R E S • Extremely low noise • Silicon nitride passivation • Rugged construction


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    bbS3T31 D03231b BGD502 BGD504 PINNING-SOT115C BGD50ue; DD3S31Ã BGD504 DIN45004B; DIN45004B 550 mhz catv power doubler PDF

    TM-35

    Abstract: BGD106 DIN45004B
    Text: Philips Semiconductors bbS3^31 DD32312 DLT IAPX Product specification CATV power doubler amplifier module BGD106 N AMER PHILIPS/DISCRETE PINNING -SOT115C FEATURES PIN • Excellent linearity PIN CONFIGURATION DESCRIPTION • Extremely low noise 1 input • Silicon nitride passivation


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    DD32312 BGD106 -SOT115C MSB004 -60dB DIN45004B; TM-35 BGD106 DIN45004B PDF

    Untitled

    Abstract: No abstract text available
    Text: bbS3R31 Philips Semiconductors DD32351 B OR M l APX Product specification CATV amplifier module — — BGY65 — N AflER PHILIPS/DISCRETE PINNING -SOT115C FEATURES PIN • Excellent linearity PIN CONFIGURATION DESCRIPTION • Extremely low noise 1 input • Silicon nitride passivation


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    bbS3R31 DD32351 BGY65 -SOT115C DIN45004B; PDF

    BGY581

    Abstract: BGY580 DIN45004B
    Text: Philips Semiconductors • LtiS3T31 DD323Û1 54b CATV amplifier modules ■ APX IProductspecification BGY580;BGY581 N AP1ER PHILIPS/DISCRETE FEATURES PIN CONFIGURATION PINNING-SOT115C • Excellent linearity • Extremely low noise DESCRIPTION PIN 1 input


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    LLiS3T31 BGY580; BGY581 BGY580 BGY581 PINNING-SOT115C MSB00ductors BGY580 DIN45004B PDF

    Untitled

    Abstract: No abstract text available
    Text: bbSBTBl Philips Semiconductors DD32411 DD3 • APX Pfoductspecification CATV amplifier module BGY685A N AUER PHILIPS/DISCRETE FEATURES PINNING - SOT115C PIN CONFIGURATION DESCRIPTION PIN • Excellent linearity • Extremely low noise 1 input • Silicon nitride passivation


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    DD32411 BGY685A OT115C DIN45004B) PDF

    Untitled

    Abstract: No abstract text available
    Text: P hilips Sem iconductors DD32512 T2D BB A P X Product specification Hybrid integrated circuit VHF/UHF wideband amplifier OM2070B N AMER PHILIPS/DISCRETE DESCRIPTION b'JE PIN CONFIGURATION A three-stage wideband amplifier In hybrid integrated circuit technology


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    DD32512 OM2070B MCD445 hbS3T31 DD3ES17 PDF

    Untitled

    Abstract: No abstract text available
    Text: bb53331 Philips Semiconductors DD32313 m 3 M l APX CATV amplifier module Product specification BGD506 — N AUER PHILIPS/DISCRETE PINNING-SOT115C FEATURES PIN CONFIGURATION DESCRIPTION PIN • Excellent linearity • Extremely low noise 1 input • Silicon nitride passivation


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    bb53331 DD32313 BGD506 PINNING-SOT115C REF44 DIN45004B; PDF

    Untitled

    Abstract: No abstract text available
    Text: HARRIS SEMICONt SECTOR MOE t M 43D2271 DD32M72 fl B H A S T- 7 5 - / / - Z . I ¡Jj H a r r i s C B C 2 D 2 2 1 2 1 1 2 C M O S 4 x 4 x 2 Crosspoint Switch With Control Memory A u g u s t 1991 Features D escription • L o w O N R e s is t a n c e . 7 5 V T y p . a t V d d = 1 2 V


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    43D2271 DD32M72 M30E271 003247T T--75--11-- CD22101, PDF

    a hybrid wideband amplifier

    Abstract: OM2052
    Text: Philips Semiconductc bbS3=131 DD324BD STD I APX Product specification Hybrid integrated circuit VHF/UHF wideband amplifier OM2052 N AMER PHILIPS/DISCRETE PINNING DESCRIPTION A two-stage wideband amplifier in hybrid integrated circuit technology on a thin-film substrate, intended


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    OM2052 OM2052 a hybrid wideband amplifier PDF

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE bTE bbS3T31 DD325bb DTI H A P X D Philips Semiconductors Preliminary specification Wideband amplifier module OM2082/60 DESCRIPTION A two-stage wideband amplifier in hybrid integrated circuit form on a thin-film substrate. The device is intended for use


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    bbS3T31 DD325bb OM2082/60 PDF

    uhf vhf booster

    Abstract: UCD445 philips if catv amplifier DD32512 OM2070B vHF amplifier DIAGRAM booster-amplifiers wideband 28 HF VHF power amplifier module
    Text: Philips Semiconductors bbâ^^Bl DD32512 T SD H APX Product specification Hybrid integrated circuit VHF/UHF wideband amplifier OM2070B N AMER PHILIPS/DISCRETE DESCRIPTION b'JE ]> PIN CONFIGURATION A three-stage wideband amplifier In hybrid integrated circuit technology


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    DD32512 OM2070B MCD444 hbS3T31 D03E517 uhf vhf booster UCD445 philips if catv amplifier OM2070B vHF amplifier DIAGRAM booster-amplifiers wideband 28 HF VHF power amplifier module PDF

    BGY85A

    Abstract: BGY84A DIN45004B philips hybrid amplifier modules
    Text: Philips Semiconductors bbSa'iBl DD323bb 23T IAPX Product specification BGY84A;BGY85A CATV amplifier modules N AMER PHILIPS/] ISCRETE PINNING -SOT115C FEATURES PIN • Excellent linearity PIN CONFIGURATION DESCRIPTION ♦ Extremely low noise 1 input • Silicon nitride passivation


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    DD323bb -SOT115C BGY84A BGY85A BGY84A BGY85A bb53T31 00323bfl DIN45004B philips hybrid amplifier modules PDF

    BGE88

    Abstract: philips hybrid amplifier modules
    Text: Philips Sem iconductors DD3233b ST2 CATV amplifier module I APX Product specification BGE88;BGE88/01 N AMER PHILIPS/DISCRETE FEATURES PINNING -S O T 1 1 5 C PIN • Excellent linearity • Extremely low noise 1 PIN CONFIGURATION DESCRIPTION input • Silicon nitride passivation


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    BGE88 BGE88/01 PINNING-SOT115C -60dB BGE88 philips hybrid amplifier modules PDF

    cb pj 47 diode

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE b^E J> bbS3T31 DD3227fl 070 H A P X Product specification Philips Semiconductors NPN silicon planar epitaxial microwave power transistor _ LFE15600X FEATURES QUICK REFERENCE DATA • Diffused emitter ballasting resistors


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    bbS3T31 DD3227fl LFE15600X cb pj 47 diode PDF

    philips om350

    Abstract: OM350
    Text: ^ 5 3 ^ 3 1 DD3243E fl3fl H A P X OM350 _ N AMER PHILIPS/DISCRETE bRE ]> HYBRID INTEGRATED CIRCUIT VHF/UHF WIDE-BAND AMPLIFIER Two-stage wide-band amplifier in hybrid integrated circuit technique on a thin-film substrate, intended for RATV and MATV applications.


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    DD3243E OM350 D032M37 philips om350 OM350 PDF

    AXP 188 ba

    Abstract: 21071-DA 2mb1100 AXP 188 IC 5188b RSAD 5111 1M 21071-BA 82378IB 21071AA d327c
    Text: m DECchip 21071-AA, 21072-AA Core Logic Data Sheet m A p ril 1994 21071-AA, 21072-A A Features: • Supports the entire fam ily of the DECchip 21064 Alpha AXP m icroprocessors • DECchip 21071-AA: 128-bit cache/64-bit memory • DECchip 21072-AA: 128-bit cache/128-bit


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    21071-AA, 1072-A 128-bit cache/64-bit 21072-AA: cache/128-bit 32-bit parity/32-bit 21072-AA AXP 188 ba 21071-DA 2mb1100 AXP 188 IC 5188b RSAD 5111 1M 21071-BA 82378IB 21071AA d327c PDF

    sequential timer working

    Abstract: rom 512x4 0011B KS57-series
    Text: KS57C0208 Cl CM ELECTRONICS Mi crocontroll er DESCRIPTION The KS57C0208 single-chip 4-bit microcontroller is fabricated using an advanced CMOS process. With two 8-bit timer/counters, and 16 n-channel, open-drain I/O pins, the KS57C0208 offers an excellent design solution for a


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    KS57C0208 KS57C0208 TCL01 24-SOP-375 32DLD sequential timer working rom 512x4 0011B KS57-series PDF

    82C54-2-P

    Abstract: No abstract text available
    Text: 47E » m Ö235b05 0G321flfl S • SIEG SIEMENS AKTIENGESELLSCHAF Av* "T-S W ^ y $ t\ SAB 82C54 Programmable CMOS Interval Timer SAB 82C54 up to 8 MHz SAB 82C54-2 up to 10 MHz • C om patible w ith all Siemens and m ost other microprocessors • Six program m able counter modes


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    235b05 0G321ff 82C54 82C54 82C54-2 16-bit 82C54-2) 24-pin P-DIP-24) 82C54-2-P PDF

    Untitled

    Abstract: No abstract text available
    Text: ÔSaSbQS D D 3 2 m b 4?E ì> SIEMENS 4 • S IE G SIEMENS AKTIENGESELLSCHAF Token Bus Modem TBM SAB 82511 Advanced Information • • • • • Carrier-band modem fully compatible with IEEE 802.4 and MAP Standard 5 and 10 Mbit/s data rate using phase-coherent FSK modulation


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    PDF

    1N5148A

    Abstract: 1N5139A MIL-STD-750 METHOD 2036 5961-N072 jantx 1n5139a
    Text: 44E D MIL SPECS • G00Q125 D032flhb fi ■ M I L S The documentation and process conversion measures necessary to comply with this revision shall be completed by 93 • ! INCH-POUNO I 2 June MIL-S-19500/383A 2 March 1993 SUPERSEDING MIL-S-19500/383 14 January 1969


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    G00Q125 D032flhb MIL-S-19500/383A MIL-S-19500/383 1N5139A 1N5148A MIL-S-19500 5961-N072) MIL-STD-750 METHOD 2036 5961-N072 jantx 1n5139a PDF