IC TA 7089 equivalent
Abstract: pcb antenna TA 7089 equivalent R13C
Text: MRFIC1819 3.6 V 18OO MHz GaAs Integrated Power Amplifier The MRFIC1819 is a single supply, RF power amplifier designed for the 1W DCS1800/PCS1900 handheld radio. The negative power supply is generated inside the chip using RF rectification, which avoids any spurious
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MRFIC1819
DCS1800/PCS1900
AN1599
MRFIC0913
MC33169
AN1602
GSM/DCS1800
IC TA 7089 equivalent
pcb antenna
TA 7089 equivalent
R13C
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TRANSISTOR cBC 415
Abstract: Inside the RF Power Transistor PTB20105 RF POWER TRANSISTOR RF Transistor Selection transistor theory ericsson rf
Text: e Inside the RF Power Transistor Prepared by Ted Johansson, Dr. Tech. Process and Device Design, Business Center RF Power, Ericsson Components AB, Kista, Sweden Introduction The purpose of this application note is to show some of the chip level design considerations and technical details
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TED-21,
TRANSISTOR cBC 415
Inside the RF Power Transistor
PTB20105
RF POWER TRANSISTOR
RF Transistor Selection
transistor theory
ericsson rf
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16EP
Abstract: No abstract text available
Text: MRFIC0919 3.6 V GSM GaAs Integrated Power Amplifier The MRFIC0919 is a single supply, RF power amplifier designed for the 2.0 W GSM900 handheld radio. The negative power supply is generated inside the chip using RF rectification, which avoids any spurious signal. A
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MRFIC0919
GSM900
AN1599
MRFIC0913
MC33169
AN1602
GSM/DCS1800
16EP
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IC TA 7089 equivalent
Abstract: IC TA 7089 P R13C "RF Power Amplifier" motorola 1w zener diodes Zener diode 2.2X 948L MC33170 MMSZ4689T1 MRFIC1819
Text: Order this document by MRFIC1819/D MRFIC1819 3.6 V 18OO MHz GaAs Integrated Power Amplifier The MRFIC1819 is a single supply, RF power amplifier designed for the 1W DCS1800/PCS1900 handheld radio. The negative power supply is generated inside the chip using RF rectification, which avoids any spurious
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MRFIC1819/D
MRFIC1819
MRFIC1819
DCS1800/PCS1900
IC TA 7089 equivalent
IC TA 7089 P
R13C
"RF Power Amplifier"
motorola 1w zener diodes
Zener diode 2.2X
948L
MC33170
MMSZ4689T1
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KC810
Abstract: R13C MRFIC0919R2 negative voltage generate circuit 948L GSM900 MC33170 MMSZ4689T1 MRFIC0919 MTSF3N02HD
Text: Order this document by MRFIC0919/D MRFIC0919 3.6 V GSM GaAs Integrated Power Amplifier The MRFIC0919 is a single supply, RF power amplifier designed for the 2.0 W GSM900 handheld radio. The negative power supply is generated inside the chip using RF rectification, which avoids any spurious signal. A
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MRFIC0919/D
MRFIC0919
MRFIC0919
GSM900
KC810
R13C
MRFIC0919R2
negative voltage generate circuit
948L
MC33170
MMSZ4689T1
MTSF3N02HD
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Angle dimension representation in tables as per ASME
Abstract: No abstract text available
Text: Order this document by MRFIC0919/D MRFIC0919 Advance Information 3.6 V GSM GaAs Integrated Power Amplifier The MRFIC0919 is a single supply, RF power amplifier designed for the 2.0 W GSM900 handheld radio. The negative power supply is generated inside the chip using RF rectification, which avoids any spurious signal. A
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MRFIC0919/D
MRFIC0919
GSM900
MRFIC0919/D
Angle dimension representation in tables as per ASME
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motorola zc 40
Abstract: motorola zc IC TA 7089 P
Text: Order this document by MRFIC1819/D MRFIC1819 Advance Information 3.6 V 18OO MHz GaAs Integrated Power Amplifier The MRFIC1819 is a single supply, RF power amplifier designed for the 1W DCS1800/PCS1900 handheld radio. The negative power supply is generated inside the chip using RF rectification, which avoids any spurious
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MRFIC1819/D
MRFIC1819
DCS1800/PCS1900
MRFIC1819/D
motorola zc 40
motorola zc
IC TA 7089 P
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Untitled
Abstract: No abstract text available
Text: Order this document by MRFIC0919/D MRFIC0919 Advance Information 3.6 V GSM GaAs Integrated Power Amplifier The MRFIC0919 is a single supply, RF power amplifier designed for the 2.0 W GSM900 handheld radio. The negative power supply is generated inside the chip using RF rectification, which avoids any spurious signal. A
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MRFIC0919/D
MRFIC0919
GSM900
MRFIC0919/D
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IC TA 7089
Abstract: IC TA 7089 equivalent IC TA 7089 P motorola application notES
Text: Order this document by MRFIC1819/D MRFIC1819 Advance Information 3.6 V 18OO MHz GaAs Integrated Power Amplifier The MRFIC1819 is a single supply, RF power amplifier designed for the 1W DCS1800/PCS1900 handheld radio. The negative power supply is generated inside the chip using RF rectification, which avoids any spurious
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MRFIC1819/D
MRFIC1819
DCS1800/PCS1900
MRFIC1819/D
IC TA 7089
IC TA 7089 equivalent
IC TA 7089 P
motorola application notES
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Untitled
Abstract: No abstract text available
Text: PRODUCT DATASHEET AAT1171 SwitchRegTM 600mA Voltage-Scaling Step-Down Converter for RF Power Amplifiers with Bypass Switch General Description Features The AAT1171 SwitchReg dynamically controls the operating voltage of a WCDMA or CDMA power amplifier inside
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600mA
AAT1171
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aat11715
Abstract: No abstract text available
Text: DATA SHEET AAT1171 600mA Voltage-Scaling Step-Down Converter for RF Power Amplifiers with Bypass Switch General Description Features The AAT1171 SwitchReg dynamically controls the operating voltage of a WCDMA or CDMA power amplifier inside single-cell, lithium-ion battery-powered systems.
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AAT1171
600mA
AAT1171
01999A
aat11715
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AAT1171IUP-1-T1
Abstract: C1608X5ROJ475K
Text: DATA SHEET AAT1171 600mA Voltage-Scaling Step-Down Converter for RF Power Amplifiers with Bypass Switch General Description Features The AAT1171 SwitchReg dynamically controls the operating voltage of a WCDMA or CDMA power amplifier inside single-cell, lithium-ion battery-powered systems.
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AAT1171
600mA
AAT1171
201999B
AAT1171IUP-1-T1
C1608X5ROJ475K
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RF Power Amplifiers
Abstract: LPF2010 analog devices 118a SD3112-4R7-R AAT1171 aat11715 aat11714
Text: AAT1171 600mA Voltage-Scaling Step-Down Converter for RF Power Amplifiers with Bypass Switch General Description Features The AAT1171 SwitchReg dynamically controls the operating voltage of a WCDMA or CDMA power amplifier inside single-cell, lithium-ion battery-powered systems. The AAT1171 outputs a voltage
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AAT1171
600mA
AAT1171
RF Power Amplifiers
LPF2010
analog devices 118a
SD3112-4R7-R
aat11715
aat11714
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0805ZD106KAT
Abstract: 0718A LPF2010 "RF Power Amplifiers" rf convertor AAT1171 aat11715 RXXY
Text: PRODUCT DATASHEET AAT1171 SwitchRegTM 600mA Voltage-Scaling Step-Down Converter for RF Power Amplifiers with Bypass Switch General Description Features The AAT1171 SwitchReg dynamically controls the operating voltage of a WCDMA or CDMA power amplifier inside single-cell, lithium-ion battery-powered systems.
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600mA
AAT1171
0805ZD106KAT
0718A
LPF2010
"RF Power Amplifiers"
rf convertor
aat11715
RXXY
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GP 809 DIODE
Abstract: GP 007 DIODE
Text: < Silicon RF Power MOS FET Discrete > RD01MUS2B RoHS Compliance, Silicon MOSFET Power Transistor 527MHz,1W OUTLINE DRAWING DESCRIPTION RD01MUS2B is a MOS FET type transistor specifically 4.4+/-0.1 TYPE NAME LOT No. 0.8 MIN 2.5+/-0.1 This device has an internal monolithic zener diode from
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RD01MUS2B
527MHz
RD01MUS2B
15dBTyp,
527MHz
GP 809 DIODE
GP 007 DIODE
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GP 809 DIODE
Abstract: GP 839 DIODE RD01MUS2B 4406 mosfet diode zener 7.2v RD01MUS2B-101 gp 520 diode diode gp 805 mosfet vhf power amplifier GP 007 DIODE
Text: < Silicon RF Power MOS FET Discrete > RD01MUS2B RoHS Compliance, Silicon MOSFET Power Transistor 527MHz,1W OUTLINE DRAWING DESCRIPTION RD01MUS2B is a MOS FET type transistor specifically 4.4+/-0.1 TYPE NAME LOT No. 0.8 MIN 2.5+/-0.1 This device has an internal monolithic zener diode from
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RD01MUS2B
527MHz
RD01MUS2B
15dBTyp,
527MHz
Nov2011
GP 809 DIODE
GP 839 DIODE
4406 mosfet
diode zener 7.2v
RD01MUS2B-101
gp 520 diode
diode gp 805
mosfet vhf power amplifier
GP 007 DIODE
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MCH185A3R9DK
Abstract: SZM-3166Z SZM3166Z tRANSISTOR 2.7 3.1 3.5 GHZ cw 3166Z
Text: SZM-3166Z SZM-3166Z 3.3 GHz to 3.6 GHz 2W Power Amplifier 3.3 GHz to 3.6 GHz 2W POWER AMPLIFIER Package: QFN, 6 mm x 6 mm Product Description Features RFMD’s SZM-3166Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT
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SZM-3166Z
SZM-3166Z
SZM-3166Z"
SZM-3166Z-EVB1
EDS-105462
MCH185A3R9DK
SZM3166Z
tRANSISTOR 2.7 3.1 3.5 GHZ cw
3166Z
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MCH182CN
Abstract: SZM-3166Z recommended land pattern for 0402 cap
Text: SZM-3166Z SZM-3166Z 3.3 GHz to 3.6 GHz 2W Power Amplifier 3.3 GHz to 3.6 GHz 2W POWER AMPLIFIER Package: QFN, 6 mm x 6 mm Product Description Features RFMD’s SZM-3166Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT
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SZM-3166Z
SZM-3166Z
SZM-3166Z"
SZM3166Z
SZM3166ZPCK-EVB1
DS100622
MCH182CN
recommended land pattern for 0402 cap
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Untitled
Abstract: No abstract text available
Text: SZM-3166Z SZM-3166Z 3.3GHz to 3.6GHz 2W Power Amplifier 3.3GHz to 3.6GHz 2W POWER AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free Package: QFN, 6mmx6mm Product Description Features RFMD’s SZM-3166Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier
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SZM-3166Z
SZM-3166Z
SZM-3166Zâ
SZM-3166Z-EVB1
EDS-105462
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Power AMP P1dB 35dBm
Abstract: No abstract text available
Text: ADVANCED INFORMATION Product Description Sirenza Microdevices’ SZM-3166Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT amplifier is made with InGaP on GaAs
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SZM-3166Z
EDS-105462
SZM-3166Z"
Power AMP P1dB 35dBm
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vpc3 s
Abstract: OFDM SZM-3066Z
Text: Preliminary Product Description Sirenza Microdevices’ SZM-3066Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT amplifier is made with InGaP on GaAs
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SZM-3066Z
EDS-104608
SZM-3066Z"
SZM-3066Z
vpc3 s
OFDM
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vpc3 s
Abstract: vpc3 c SZM-3066Z dk39
Text: Preliminary Product Description Sirenza Microdevices’ SZM-3066Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT amplifier is made with InGaP on GaAs
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SZM-3066Z
EDS-104608
SZM-3066Z"
SZM-3066Z
vpc3 s
vpc3 c
dk39
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Untitled
Abstract: No abstract text available
Text: SZM-3066Z SZM-3066Z 3.3GHz to 3.8GHz 2 W Power Amplifier 3.3GHz to 3.8GHz 2W POWER AMPLIFIER Package: QFN, 6mmx6mm Product Description Features RFMD’s SZM-3066Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This
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SZM-3066Z
SZM-3066Z
DS131017
SZM3066ZSR
SZM3066Z
SZM3066ZPCK-EVB1
SZM3066ZSQ
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Untitled
Abstract: No abstract text available
Text: SZM-3066Z SZM-3066Z 3.3GHz to 3.8GHz 2W Power Amplifier 3.3GHz to 3.8GHz 2W POWER AMPLIFIER RoHS Compliant and Pb-Free Product Package: QFN, 6mmx6mm Product Description Features RFMD’s SZM-3066Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This
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SZM-3066Z
SZM-3066Z
EDS-104608
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