INSIDE THE RF POWER TRANSISTOR Search Results

IC TA 7089 equivalent

Abstract: pcb antenna TA 7089 equivalent R13C
Contextual Info: MRFIC1819 3.6 V 18OO MHz GaAs Integrated Power Amplifier The MRFIC1819 is a single supply, RF power amplifier designed for the 1W DCS1800/PCS1900 handheld radio. The negative power supply is generated inside the chip using RF rectification, which avoids any spurious

TRANSISTOR cBC 415

Abstract: Inside the RF Power Transistor PTB20105 RF POWER TRANSISTOR RF Transistor Selection transistor theory ericsson rf
Contextual Info: e Inside the RF Power Transistor Prepared by Ted Johansson, Dr. Tech. Process and Device Design, Business Center RF Power, Ericsson Components AB, Kista, Sweden Introduction The purpose of this application note is to show some of the chip level design considerations and technical details

16EP

Contextual Info: MRFIC0919 3.6 V GSM GaAs Integrated Power Amplifier The MRFIC0919 is a single supply, RF power amplifier designed for the 2.0 W GSM900 handheld radio. The negative power supply is generated inside the chip using RF rectification, which avoids any spurious signal. A

IC TA 7089 equivalent

Abstract: IC TA 7089 P R13C "RF Power Amplifier" motorola 1w zener diodes Zener diode 2.2X 948L MC33170 MMSZ4689T1 MRFIC1819
Contextual Info: Order this document by MRFIC1819/D MRFIC1819 3.6 V 18OO MHz GaAs Integrated Power Amplifier The MRFIC1819 is a single supply, RF power amplifier designed for the 1W DCS1800/PCS1900 handheld radio. The negative power supply is generated inside the chip using RF rectification, which avoids any spurious

KC810

Abstract: R13C MRFIC0919R2 negative voltage generate circuit 948L GSM900 MC33170 MMSZ4689T1 MRFIC0919 MTSF3N02HD
Contextual Info: Order this document by MRFIC0919/D MRFIC0919 3.6 V GSM GaAs Integrated Power Amplifier The MRFIC0919 is a single supply, RF power amplifier designed for the 2.0 W GSM900 handheld radio. The negative power supply is generated inside the chip using RF rectification, which avoids any spurious signal. A

Angle dimension representation in tables as per ASME

Contextual Info: Order this document by MRFIC0919/D MRFIC0919 Advance Information 3.6 V GSM GaAs Integrated Power Amplifier The MRFIC0919 is a single supply, RF power amplifier designed for the 2.0 W GSM900 handheld radio. The negative power supply is generated inside the chip using RF rectification, which avoids any spurious signal. A

motorola zc 40

Abstract: motorola zc IC TA 7089 P
Contextual Info: Order this document by MRFIC1819/D MRFIC1819 Advance Information 3.6 V 18OO MHz GaAs Integrated Power Amplifier The MRFIC1819 is a single supply, RF power amplifier designed for the 1W DCS1800/PCS1900 handheld radio. The negative power supply is generated inside the chip using RF rectification, which avoids any spurious

Contextual Info: Order this document by MRFIC0919/D MRFIC0919 Advance Information 3.6 V GSM GaAs Integrated Power Amplifier The MRFIC0919 is a single supply, RF power amplifier designed for the 2.0 W GSM900 handheld radio. The negative power supply is generated inside the chip using RF rectification, which avoids any spurious signal. A

IC TA 7089

Abstract: IC TA 7089 equivalent IC TA 7089 P motorola application notES
Contextual Info: Order this document by MRFIC1819/D MRFIC1819 Advance Information 3.6 V 18OO MHz GaAs Integrated Power Amplifier The MRFIC1819 is a single supply, RF power amplifier designed for the 1W DCS1800/PCS1900 handheld radio. The negative power supply is generated inside the chip using RF rectification, which avoids any spurious

Contextual Info: PRODUCT DATASHEET AAT1171 SwitchRegTM 600mA Voltage-Scaling Step-Down Converter for RF Power Amplifiers with Bypass Switch General Description Features The AAT1171 SwitchReg dynamically controls the operating voltage of a WCDMA or CDMA power amplifier inside

aat11715

Contextual Info: DATA SHEET AAT1171 600mA Voltage-Scaling Step-Down Converter for RF Power Amplifiers with Bypass Switch General Description Features The AAT1171 SwitchReg dynamically controls the operating voltage of a WCDMA or CDMA power amplifier inside single-cell, lithium-ion battery-powered systems.

AAT1171IUP-1-T1

Abstract: C1608X5ROJ475K
Contextual Info: DATA SHEET AAT1171 600mA Voltage-Scaling Step-Down Converter for RF Power Amplifiers with Bypass Switch General Description Features The AAT1171 SwitchReg dynamically controls the operating voltage of a WCDMA or CDMA power amplifier inside single-cell, lithium-ion battery-powered systems.

RF Power Amplifiers

Abstract: LPF2010 analog devices 118a SD3112-4R7-R AAT1171 aat11715 aat11714
Contextual Info: AAT1171 600mA Voltage-Scaling Step-Down Converter for RF Power Amplifiers with Bypass Switch General Description Features The AAT1171 SwitchReg dynamically controls the operating voltage of a WCDMA or CDMA power amplifier inside single-cell, lithium-ion battery-powered systems. The AAT1171 outputs a voltage

0805ZD106KAT

Abstract: 0718A LPF2010 "RF Power Amplifiers" rf convertor AAT1171 aat11715 RXXY
Contextual Info: PRODUCT DATASHEET AAT1171 SwitchRegTM 600mA Voltage-Scaling Step-Down Converter for RF Power Amplifiers with Bypass Switch General Description Features The AAT1171 SwitchReg dynamically controls the operating voltage of a WCDMA or CDMA power amplifier inside single-cell, lithium-ion battery-powered systems.

GP 809 DIODE

Abstract: GP 007 DIODE
Contextual Info: < Silicon RF Power MOS FET Discrete > RD01MUS2B RoHS Compliance, Silicon MOSFET Power Transistor 527MHz,1W OUTLINE DRAWING DESCRIPTION RD01MUS2B is a MOS FET type transistor specifically 4.4+/-0.1 TYPE NAME LOT No. 0.8 MIN 2.5+/-0.1 This device has an internal monolithic zener diode from

GP 809 DIODE

Abstract: GP 839 DIODE RD01MUS2B 4406 mosfet diode zener 7.2v RD01MUS2B-101 gp 520 diode diode gp 805 mosfet vhf power amplifier GP 007 DIODE
Contextual Info: < Silicon RF Power MOS FET Discrete > RD01MUS2B RoHS Compliance, Silicon MOSFET Power Transistor 527MHz,1W OUTLINE DRAWING DESCRIPTION RD01MUS2B is a MOS FET type transistor specifically 4.4+/-0.1 TYPE NAME LOT No. 0.8 MIN 2.5+/-0.1 This device has an internal monolithic zener diode from

MCH185A3R9DK

Abstract: SZM-3166Z SZM3166Z tRANSISTOR 2.7 3.1 3.5 GHZ cw 3166Z
Contextual Info: SZM-3166Z SZM-3166Z 3.3 GHz to 3.6 GHz 2W Power Amplifier 3.3 GHz to 3.6 GHz 2W POWER AMPLIFIER Package: QFN, 6 mm x 6 mm Product Description Features RFMD’s SZM-3166Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT

MCH182CN

Abstract: SZM-3166Z recommended land pattern for 0402 cap
Contextual Info: SZM-3166Z SZM-3166Z 3.3 GHz to 3.6 GHz 2W Power Amplifier 3.3 GHz to 3.6 GHz 2W POWER AMPLIFIER Package: QFN, 6 mm x 6 mm Product Description Features RFMD’s SZM-3166Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT

Contextual Info: SZM-3166Z SZM-3166Z 3.3GHz to 3.6GHz 2W Power Amplifier 3.3GHz to 3.6GHz 2W POWER AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free Package: QFN, 6mmx6mm Product Description Features RFMD’s SZM-3166Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier

Power AMP P1dB 35dBm

Contextual Info: ADVANCED INFORMATION Product Description Sirenza Microdevices’ SZM-3166Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT amplifier is made with InGaP on GaAs

vpc3 s

Abstract: OFDM SZM-3066Z
Contextual Info: Preliminary Product Description Sirenza Microdevices’ SZM-3066Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT amplifier is made with InGaP on GaAs

vpc3 s

Abstract: vpc3 c SZM-3066Z dk39
Contextual Info: Preliminary Product Description Sirenza Microdevices’ SZM-3066Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT amplifier is made with InGaP on GaAs

Contextual Info: SZM-3066Z SZM-3066Z 3.3GHz to 3.8GHz 2 W Power Amplifier 3.3GHz to 3.8GHz 2W POWER AMPLIFIER Package: QFN, 6mmx6mm Product Description Features RFMD’s SZM-3066Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This

Contextual Info: SZM-3066Z SZM-3066Z 3.3GHz to 3.8GHz 2W Power Amplifier 3.3GHz to 3.8GHz 2W POWER AMPLIFIER RoHS Compliant and Pb-Free Product Package: QFN, 6mmx6mm Product Description Features RFMD’s SZM-3066Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This