Untitled
Abstract: No abstract text available
Text: Amplifiers for infrared detectors C4159/C5185 series C3757-02 Low noise amplifiers for infrared detector InSb, InAs, InGaAs, MCT, PbS, PbSe Accessories Instruction manual Power cable (one end with 4-pin connector for connection to amplifier and the other end unterminated, 2 m) A4372-02
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C4159/C5185
C3757-02
A4372-02
C4159
C5185
E3620A,
E3630A
SE-171
KIRD1011E10
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c4159 e
Abstract: No abstract text available
Text: Amplifiers for infrared detectors C4159/C5185 series C3757-02 Low noise amplifiers for infrared detector InSb, InAs, InGaAs, MCT, PbS, PbSe Accessories Instruction manual Power cable (one end with 4-pin connector for connection to amplifier and the other end unterminated, 2 m) A4372-02
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C4159/C5185
C3757-02
A4372-02
C4159
C5185
SE-171
KIRD1011E09
c4159 e
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transistor C4159
Abstract: C4159 C4159-03 4-Pin HIROSE hr10 Dewar C5185 P3981 C3757-02 C4159-01 C4159-04
Text: Amplifiers for infrared detectors C4159/C5185 series C3757-02 Low noise amplifiers for infrared detector InSb, InAs, InGaAs, MCT, PbS, PbSe Accessories Instruction manual Power cable (one end with 4-pin connector for connection to amplifier and the other end unterminated, 2 m) A4372-02
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C4159/C5185
C3757-02
A4372-02
C4159
C5185
E3620A,
E3630A
SE-171
KIRD1011E11
transistor C4159
C4159-03
4-Pin HIROSE hr10
Dewar
P3981
C3757-02
C4159-01
C4159-04
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Untitled
Abstract: No abstract text available
Text: Amplifiers for infrared detectors C4159/C5185 series C3757-02 Low noise amplifiers for infrared detector InSb, InAs, InGaAs, MCT, PbS, PbSe Accessories Instruction manual Power cable (one end with 4-pin connector for connection to amplifier and the other end unterminated, 2 m) A4372-02
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C4159/C5185
C3757-02
A4372-02
C4159
C5185
SE-171
KIRD1011E08
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Untitled
Abstract: No abstract text available
Text: Amplifier for infrared detector C4159/C5185 series C3757-02 Low noise amplifiers for infrared detector InSb, InAs, InAsSb, InGaAs, MCT, PbS, PbSe Accessories Instruction manual Power cable (one end with 4-pin connector for connection to amplifier and the other end unterminated, 2 m) A4372-02
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PDF
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C4159/C5185
C3757-02
A4372-02
C4159
C5185
E3620A,
E3630A
SE-171
KIRD1011E13
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Untitled
Abstract: No abstract text available
Text: Amplifier for infrared detector C4159/C5185 series C3757-02 Low noise amplifiers for infrared detector InSb, InAs, InAsSb, InGaAs, MCT, PbS, PbSe Accessories Instruction manual Power cable (one end with 4-pin connector for connection to amplifier and the other end unterminated, 2 m) A4372-02
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PDF
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C4159/C5185
C3757-02
A4372-02
C4159
C5185
E3620A,
E3630A
SE-171
KIRD1011E13
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Infrared detectors
Abstract: dark detector application ,uses and working
Text: Compound semiconductor photosensors 1 InGaAs/GaAs PIN photodiodes 1-1 Characteristics 1-2 How to use 2 InGaAs APD 2-1 Operating principle 2-2 Characteristics 2-3 How to use CHAPTER 06 8 MCT HgCdTe photovoltaic detectors 8-1 Characteristics 8-2 How to use
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Selection guide
Abstract: Infrared detectors P13243-011MA
Text: Selection guide - March 2015 Infrared Detectors Covering a broad spectral range in the infrared region INFRARED DETECTORS HAMAMATSU PHOTONICS K.K. Infrared detectors Infrared detectors are widely used in diverse field including measurement, analysis, indust r y, c o m m u n i c a t i o n , a g r i c u l tu r e , m e d i c i n e ,
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KIRD0001E08
Selection guide
Infrared detectors
P13243-011MA
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Abstract: No abstract text available
Text: 化合物光半導体 受光素子 1 InGaAs/GaAs PINフォトダイオード 1-1 1-2 特性 使い方 2 InGaAs APD 2-1 2-2 2-3 動作原理 特性 使い方 第 章 6 8 MCT HgCdTe 光起電力素子 8-1 8-2 特性 使い方 9 複合素子 10 オプション
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metal detector circuit diagram
Abstract: circuits metal detector HEAT DETECTOR DIAGRAM C3871 power supply C1103 INSB PHOTODIODE on-off valve infrared detector 1/metal detector circuit diagram A4372-05
Text: INFRARED DETECTOR Infrared detector Accessory Wide lineups of accessories for infrared detection Temperature controller C1103 series C1103 series is a temperature controller designed for thermoelectrically cooled infrared detectors. C1103 series allows easy but accurate
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C1103
C1103-04
C1103-05
C1103-07
SE-171
KACC1062E04
metal detector circuit diagram
circuits metal detector
HEAT DETECTOR DIAGRAM
C3871 power supply
INSB PHOTODIODE
on-off valve
infrared detector
1/metal detector circuit diagram
A4372-05
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METAL DETECTOR circuit for make
Abstract: metal detector circuit diagram metal detector diagram circuits metal detector to3 HEATSINK C4696 infrared detector infrared detectors A4372-05 C1103
Text: Accessories for infrared detectors Temperature controllers Heatsinks for TE-cooled detector Chopper, etc. Wide lineups of accessories for infrared detector HAMAMATSU provides temperature controllers, heatsinks for TE-cooled detector, chopper and cables, etc as accessories for infrared
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A3179
C4159/C5185
C3757-02
C4696)
C4696
SE-171
KACC1062E09
METAL DETECTOR circuit for make
metal detector circuit diagram
metal detector diagram
circuits metal detector
to3 HEATSINK
C4696
infrared detector
infrared detectors
A4372-05
C1103
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Untitled
Abstract: No abstract text available
Text: Accessories for infrared detectors Temperature controllers Heatsinks for TE-cooled detector Chopper, etc. Wide lineups of accessories for infrared detector HAMAMATSU provides temperature controllers, heatsinks for TE-cooled detector, chopper and cables, etc as accessories for infrared detectors.
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C4696
A3179
C4159/C5185
C3757-02
C4696)
SE-171
KACC1062E11
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quadrant detector hgcdte
Abstract: J15QUAD quadrant photodiode j10quad j16quad quadrant photodiode preamplifier
Text: J ^ E G zG JUDSON q Figure 29-1 Position S ensor D etector C onfiguration J16PS, J12PS, J10PS Position Sensors A Ge, InAs, or InSb position sensor consists of a single element photodiode with a quadrupole electrode geometry. These devices can provide linear X-Y
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J16PS,
J12PS,
J10PS
J16QUAD,
J10QUAD,
J15QUAD
UAD-8D6-R02M
J16QU
AD-8D6-R05M
J10QUA
quadrant detector hgcdte
J15QUAD
quadrant photodiode
j10quad
j16quad
quadrant photodiode preamplifier
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thermistor inas
Abstract: INSB PHOTODIODE 101 thermistor InSb spectral response insb detector preamplifier c4159
Text: InAs, InSb Photovoltaic Detectors Photovoltaic detectors with high speed response and low noise • Long cooling hold time: 8 hours A large capacity glass dewar cooled by liquid nitrogen is used for standard detector package. It allows for 8-hour continuous cooling.
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KI80A0055EA
0G0470
P394A,
P3226-02
P791-11
P3207-04
P4115
K1713-01,
K3413-01,
P3981-01,
thermistor inas
INSB PHOTODIODE
101 thermistor
InSb spectral response
insb detector
preamplifier c4159
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photodiode ge
Abstract: INSB PHOTODIODE HgCdTe J16QUAD-8D6-R02M J16PS 4 quadrant InSb quadrant detector InSb metal detector sensor j10quad
Text: E G zG J U D S O N * * — — «ï fflb . *V ÌV '#3é ¿.fi, ir Figure 29-2 Example of Position Linearity Figure 29-1 Position Sensor Detector Configuration - J16PS, J12PS, J10PS — '3 Î fc* i l '»ti'*.«'* Po sitio n S en sors A Ge, InAs, or InSb position sensor
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J16PS,
J12PS,
J10PS
J16QUAD,
J10QUAD,
J15QUAD
J16Quad
10x10
J12PS-8B12-S05M
J10PS-M204-S05M
photodiode ge
INSB PHOTODIODE
HgCdTe
J16QUAD-8D6-R02M
J16PS
4 quadrant InSb
quadrant detector
InSb
metal detector sensor
j10quad
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Glossary terms used in this catalog
Abstract: detector ingaas photodiode InGaAs NEP InSb spectral response GE capacitor CATALOG Semiconductor Radiation Detector
Text: Glossary of Terms used in This Catalog D ark R esistance: Rd This is the resistance of a photoconductive device PbS, PbSe, MCT etc. in the dark state. D ark Current: Id The dark current is the small current which flows when a reverse voltage is applied to a photovoltaic detector (InGaAs, Ge, InAs, InSb etc.) under
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B5170
Abstract: B5170-05 P5172-200 P27S0
Text: Infrared Detectors Ge Photodiodes Type No. .On.ess etherise notea ftclme Am» Paekag« 1 mm B 1720-02 T O -18 ¥>&ak Ssecfcai «estons# “ te g ' fC>: Sensrtivity U/-au«lnru^th n s V iW ^ i) ip Short Circuit (h o * te , • v m w W & aap8% • m li’ ’
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B192O-01
B2614-05
B5170-05
3x10s
1x10s
P5171
P5172-200
P27S0
K1713
B5170
B5170-05
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APD InGaAs array
Abstract: Photodiodes Pyroelectric Detectors Image Sensors Photodiode apd amplifier VISIBLE Photodiode Array Detectors INSB PHOTODIODE Avalanche cmos detector H4741
Text: Selection Guide Types and Applications of Hamamatsu Opto-semiconductors. 2, 3 Si Photodiodes S1226, S1227 Series UV to Visible Light, for Precision Photometry, Suppressed IR Sensitivity 4 S1336, S1337 Series (UV to IR, for Precision Photometry) .4
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S1226,
S1227
S1336,
S1337
S2386,
S2387
C2719,
C6386
H4741,
H3651,
APD InGaAs array
Photodiodes
Pyroelectric Detectors
Image Sensors
Photodiode apd amplifier VISIBLE
Photodiode Array Detectors
INSB PHOTODIODE
Avalanche cmos detector
H4741
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Photodiodes
Abstract: Infrared photodiode preamplifier photodiode preamplifier
Text: Selection Guide Types and Applications of Hamamatsu O pto-sem , 3 Silicon Photodiodes S1226, S1227 Series UV to visible light, for precision photometry, Suppressed IR Sensitivity 4 S1336, S1337 Series (UV to IR, for precision photom
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S1226,
S1227
S1336,
S1337
S2386,
S2387
Photodiodes
Infrared photodiode preamplifier
photodiode preamplifier
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Untitled
Abstract: No abstract text available
Text: Infrared Detectors with Built-in Preamplifiers Dewar Types Easy-to-use, high performance de vices with the ultimate in responsivity These devices combine a dewar type detector with a matched pream plifier into a metal case. Simply by connecting to a DC power supply,
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P3357-02)
P3226-02
P394A,
P3207-04
P791-11
P4115
P3981-01,
K3413-01,
K1713-01,
KIRDA0041EA
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Photodiodes
Abstract: GaAsP Laser Diode PHOTO SENSORS insb diode led uv
Text: Types and Applications of Hamamatsu Opto-semiconductors Products ' Hiqh fcneigy Particles Si Photodiodes — UV 1— Visible I Hiqti Ene'sy P h /s « i lAJtinai MediCirt liviustrial w ^ u n n g tn rw ra ritc UV Enhanced Si Photodiodes Pollution Anaiv/t's,. ‘¿ pat iroptwlorr,ôtera
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pyroelectric PZT
Abstract: No abstract text available
Text: Construction and Operating Characteristics Infrared radiation, discovered in 1800 by Sir William H erchel, is •QUANTUM TYPE DETECTORS electrom agnetic waves in th e w avelength range extending from Q uantum type detectors feature high detectivity and high-speed
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KIRDB0114EA
KIRDB0115EA
KIRDB0116EA
KIRDB0117EA
pyroelectric PZT
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nitrogen coupling
Abstract: INSB PHOTODIODE high metal detector all Metal Detector
Text: Handling Precautions Storage 1 6 Always store the infrared detector in dark places at a room tem perature and humidity. Avoid leaving the detector in locations where it would be exposed to sunlight, strong UV or visible light, as this may result in degradation of the detector characteristics.
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Untitled
Abstract: No abstract text available
Text: Glossary of Terms Used in This Catalog Dark R e sista n ce Rd T his is the resistance o f a photoconductive device (PbS. PbSe, M C T etc.) in the dark state. Dark Current (I d ) T he dark current is the sm all current w hich flow s w hen a reverse volt
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