Untitled
Abstract: No abstract text available
Text: M28F512-12C1 IL08D C-MOS 512 K 65, 536 x 8 -BIT FLASH MEMORY 1 31 VDD A7 IN 5 32 29 30 28 NC 2 3 W IN 3 VPP IN A15 IN 4 NC A12 IN —TOP VIEW— 4 A6 IN 6 29 A14 IN 28 A13 IN A5 IN 7 27 A8 IN A4 IN 8 26 A9 IN A3 IN 9 25 A11 IN A2 IN 10 24 G IN A1 IN 11 23 A10 IN
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M28F512-12C1
IL08D
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MX27C512DC-12
Abstract: No abstract text available
Text: MX27C512DC-12 IL22 C-MOS 512K 65, 536•8 -BIT GATE PROCESS ERASABLE PROM — TOP VIEW — * A15 IN 1 VDD (+5V) 10 28 9 8 27 A14 IN A12 IN 2 7 6 A7 IN 3 26 A13 IN 5 4 A6 IN 4 25 A8 IN 3 25 A5 IN 5 24 A9 IN 24 21 A4 IN 6 23 A11 IN 23 2 A3 IN 7 22 OE/VPP IN
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MX27C512DC-12
512K-BIT
MX27C512DC-12
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JESD85
Abstract: failure rate Reliability Test Methods for
Text: Silicon Technology Reliability www.vishay.com Vishay Siliconix N-CHANNEL ACCELERATED OPERATING LIFE TEST RESULT Sample Size 2008 Equivalent Device Hours 342 536 204 Failure Rate in FIT 2.657 Failure Rate in FIT is calculated according to JEDEC Standard JESD85, Methods for Calculating Failure Rates in Units of FITs,
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JESD85,
15-May-12
JESD85
failure rate
Reliability Test Methods for
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Untitled
Abstract: No abstract text available
Text: AT28C64-15PC 1/2 IL00 * C-MOS 64K (8K X 8) ELECTRICALLY ERASABLE PROM -TOP VIEWRDY / BUSY OUT 1 VCC (+5V) 10 28 9 8 A12 IN 2 27 WE IN 7 6 A7 IN 3 NC 26 5 4 A6 IN 4 25 A8 IN 3 25 A5 IN 5 24 A9 IN 24 21 A4 IN 6 23 A11 IN 23 2 A3 IN 7 22 OE IN A2 IN 8
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AT28C64-15PC
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Sony CXA1191M
Abstract: philips ecg master replacement guide FZK101 YD 803 SGS FZK 101 Siemens CMC 707 am radio receiver philips ecg semiconductors master replacement guide CXA1191M ym2612 ecg semiconductors master replacement guide
Text: Untitled HAM RADIO FILE - Various pinouts saved from the Chipdir 2010 http://www.chipdir.org/ 0512d -0512d +-\/-+ 1 -|5V in gnd in|- 24 2 -|5V in gnd in|- 23 3 -|5V in gnd in|- 22
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0512d
------------------------------------0512d
z86e04
Sony CXA1191M
philips ecg master replacement guide
FZK101
YD 803 SGS
FZK 101 Siemens
CMC 707 am radio receiver
philips ecg semiconductors master replacement guide
CXA1191M
ym2612
ecg semiconductors master replacement guide
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PDF
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MIE-536L3U
Abstract: No abstract text available
Text: GaAlAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE Description MIE-536L3U Package Dimensions The MIE-536L3U is infrared emitting diodes in Unit: mm inches φ5.05 (.200) GaAlAs technology molded in pastel blue transparent package. 5.47 (.215) 7.62 (.300) 5.90
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MIE-536L3U
MIE-536L3U
00MIN.
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MIE-536A2U
Abstract: No abstract text available
Text: AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE Description MIE-536A2U Package Dimensions φ5.05 .200 The MIE-536A2U is infrared emitting diodes in GaAs technology with AlGaAs window coating molded in pastel pink transparent package. Unite: mm ( inches )
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MIE-536A2U
MIE-536A2U
00MIN
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MIE-536A4U
Abstract: LTd1117
Text: AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE Description MIE-536A4U Package Dimensions φ5.05 .200 The MIE-536A4U is infrared emitting diodes in GaAs technology with AlGaAs window coating molded in pastel pink transparent package. Unite: mm ( inches )
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MIE-536A4U
MIE-536A4U
00MIN
LTd1117
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Untitled
Abstract: No abstract text available
Text: Part Number : 5365F1;1 Serial Number : 5365F Circuit Board Indicators Emitted color Red Lens color Red Lum in min mcd 5,6 Lum in type (mcd) 16 Rated current (mA) 10.0 Cont forward current max 30.0 Fwd volts type 2.0 Forward volt max. 3.0 Reverse breakdown V
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5365F1
5365F
UL94V-0
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Untitled
Abstract: No abstract text available
Text: Part Number : 5360F7LC Serial Number : 5360F Circuit Board Indicators Emitted color Yellow Lens color Yellow Lum in min mcd 0,9 Lum in type (mcd) 1,6 Rated current (mA) 2 Cont forward current max 7 Fwd volts type 1,9 Forward volt max. 2,5 Reverse breakdown V
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5360F7LC
5360F
UL94V-0
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Untitled
Abstract: No abstract text available
Text: Part Number : 5365F1;1 Serial Number : 5365F Circuit Board Indicators Emitted color Red Lens color Red Lum in min mcd 5,6 Lum in type (mcd) 16 Rated current (mA) 10.0 Cont forward current max 30.0 Fwd volts type 2.0 Forward volt max. 3.0 Reverse breakdown V
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5365F1
5365F
UL94V-0
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PDF
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Untitled
Abstract: No abstract text available
Text: Part Number : 5365F5;5 Serial Number : 5365F Circuit Board Indicators Emitted color Green Lens color Green Lum in min mcd 9 Lum in type (mcd) 25 Rated current (mA) 10.0 Cont forward current max 30.0 Fwd volts type 2,1 Forward volt max. 3.0 Reverse breakdown V
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5365F5
5365F
UL94V-0
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PDF
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Untitled
Abstract: No abstract text available
Text: Part Number : 5365F7;7 Serial Number : 5365F Circuit Board Indicators Emitted color Yellow Lens color Yellow Lum in min mcd 3,6 Lum in type (mcd) 10 Rated current (mA) 10.0 Cont forward current max 30.0 Fwd volts type 2.1 Forward volt max. 3.0 Reverse breakdown V
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5365F7
5365F
UL94V-0
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PDF
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Untitled
Abstract: No abstract text available
Text: Part Number : 5360F7LC Serial Number : 5360F Circuit Board Indicators Emitted color Yellow Lens color Yellow Lum in min mcd 0,9 Lum in type (mcd) 1,6 Rated current (mA) 2 Cont forward current max 7 Fwd volts type 1,9 Forward volt max. 2,5 Reverse breakdown V
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5360F7LC
5360F
UL94V-0
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PDF
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Untitled
Abstract: No abstract text available
Text: Part Number : 5365F5;5 Serial Number : 5365F Circuit Board Indicators Emitted color Green Lens color Green Lum in min mcd 9 Lum in type (mcd) 25 Rated current (mA) 10.0 Cont forward current max 30.0 Fwd volts type 2,1 Forward volt max. 3.0 Reverse breakdown V
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5365F5
5365F
UL94V-0
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PDF
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IR 536
Abstract: TE 536
Text: N E /S U 536-T DESCRIPTION FEATURES The 536 is a spe cia l purpose h ig h p e rfo r m ance o p e ra tio n a l a m p lifie r u tiliz in g an FET in p u t stage fo r ex tre m e ly h ig h in p u t im pedance and low in p u t current. • • • • • •
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536-T
NE536
100kHz
SU536
IR 536
TE 536
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PDF
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2N577
Abstract: MP03725 8VC80
Text: I DEVICE TYPE PA C K A G E BVC EO 8VC 8 0 BVEBO 1CBO 9 VCB IV I M IN IV I M IN V I M IN |m A | MAX IV HFE M IN MAX VC 4 1C (V I 1 —A 1 FT COB (p li M A * (M H / I 2N5355 2N5365 2N 5366 2N5400 2N5401 PN P PNP PN P PNP PNP TO-92 TO-92 TO-92 TO-92 TO-92
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2N5355
2N5365
2N5400
2N5401
2N5447
2N5448
2N5449
2N5450
2N545I
MPS3395
2N577
MP03725
8VC80
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PDF
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Untitled
Abstract: No abstract text available
Text: MH8S64AALD-8 536870912-BiT 8388608-WQRD BY 64-BIT SynchronousDRAM DESCRIPTION Trie MH8S64AALD is 8388608-word by 64-bit Synchronous DRAM module. This consists of eight industry standard 8Mx8 Synchronous DRAMs in TSDP and one industory standard EEPROM in SOP.
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MH8S64AALD-8
536870912-BiT
8388608-WQRD
64-BIT
MH8S64AALD
8388608-word
94pin
10pin
85pin
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PDF
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Untitled
Abstract: No abstract text available
Text: MH8S64AMG-8 536870912-BIT 8388608-WQRD BY 64-BIT SynchronousDRAM DESCRIPTION The MH8S64AMG is 8388608-word by 64-bit Synchronous DRAM module. This consists of eight industry standard 4Mx16 Synchronous DRAMs in TSOP and one industory standard EEPROM in SOP.
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MH8S64AMG-8
536870912-BIT
8388608-WQRD
64-BIT
MH8S64AMG
8388608-word
4Mx16
85pin
94pin
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PDF
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs MH8S64AMG-8 536870912-BIT 8388608-WQRD BY 64-BIT SynchronousDRAM DESCRIPTION The MH8S64AMG is 8388608-word by 64-bit Synchronous DRAM module. This consists of eight industry standard 4M x16 Synchronous DRAMs in TSOP and one industory standard EEPROM in SOP.
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OCR Scan
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MH8S64AMG-8
536870912-BIT
8388608-WQRD
64-BIT
MH8S64AMG
8388608-word
64-bit
100MHz
MIT-DS-0167-1
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PDF
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SCHEMATIC servo dc
Abstract: servo schematic Multi-Turn Potentiometers
Text: MULTI-TURN POTENTIOMETERS 536,538 625 R. MAX. 15,88 METRIC SHAFT/BUSHING THREAD TOLERANCES. UNLESS OTHERWISE NOTED. DECIMALS ± .005 ANGLES ±2° BASIC DIMENSIONS ARE IN INCHES MILLIMETER DIMENSIONS IN PARENTHESES few SCHEMATIC G > 1.445 INCH FOR BUSHING MOUNT DUAL GANG UNIT
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000Hz
SCHEMATIC servo dc
servo schematic
Multi-Turn Potentiometers
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PDF
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs MH8S64AALD-8 536870912-BIT 8388608-WQRD BY 64-BIT SynchronousDRAM DESCRIPTION The MH8S64AALD is 8388608-word by 64-bit Synchronous DRAM module. This consists of eight industry standard 8Mx8 Synchronous DRAMs in TSOP and one industory standard EEPROM in SOP.
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OCR Scan
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MH8S64AALD-8
536870912-BIT
8388608-WQRD
64-BIT
MH8S64AALD
8388608-word
64-bit
100MHz
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PDF
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs MH8S64AALD-8 536870912-BIT 8388608-WQRD BY 64-BIT SynchronousDRAM DESCRIPTION The MH8S64AALD is 8388608-word by 64-bit Synchronous DRAM module. This consists of eight industry standard 8Mx8 Synchronous DRAMs in TSOP and one industory standard EEPROM in SOP.
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OCR Scan
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MH8S64AALD-8
536870912-BIT
8388608-WQRD
64-BIT
MH8S64AALD
8388608-word
100MHz
168-pin
84-pin
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PDF
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h8s64
Abstract: MH8S64AMG-8 MIT-DS-0167-1
Text: MITSUBISHI LSIs MH8S64AMG-8 536870912-BIT 8388608-WQRD BY 64-BIT SynchronousDRAM DESCRIPTION The MH8S64AMG is 8388608-word by 64-bit Synchronous DRAM module. This consists of eight industry standard 4Mx16 Synchronous DRAMs in TSOP and one industory standard EEPROM in SOP.
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OCR Scan
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MH8S64AMG-8
536870912-BIT
8388608-WQRD
64-BIT
MH8S64AMG
8388608-word
4Mx16
85pin
94pin
h8s64
MH8S64AMG-8
MIT-DS-0167-1
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