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    Nexperia PIMD3,115

    TRANS PREBIAS 1NPN 1PNP 6TSOP
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    DigiKey PIMD3,115 Cut Tape 136,389 1
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    PIMD3,115 Digi-Reel 136,389 1
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    PIMD3,115 Reel 129,000 3,000
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    Mouser Electronics PIMD3,115 27,309
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    Newark PIMD3,115 Cut Tape 295 5
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    Bristol Electronics PIMD3,115 2,988
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    Rochester Electronics PIMD3,115 6,998 1
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    TTI PIMD3,115 Reel 15,000
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    TME PIMD3,115 1,205 5
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    Avnet Silica PIMD3,115 9,000 10 Weeks 3,000
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    EBV Elektronik PIMD3,115 9,000 10 Weeks 3,000
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    ROHM Semiconductor IMD3AT108

    TRANS NPN/PNP PREBIAS 0.3W SMT6
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    DigiKey IMD3AT108 Digi-Reel 7,707 1
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    IMD3AT108 Cut Tape 7,707 1
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    IMD3AT108 Reel 6,000 3,000
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    Mouser Electronics IMD3AT108 9,922
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    Verical IMD3AT108 3,075 129
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    IMD3AT108 3,000 385
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    Bristol Electronics IMD3AT108 30
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    Quest Components IMD3AT108 9,515
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    IMD3AT108 24
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    TTI IMD3AT108 Reel 3,000
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    TME IMD3AT108 10
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    Ameya Holding Limited IMD3AT108 100 1
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    Avnet Asia IMD3AT108 24 Weeks 3,000
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    Win Source Electronics IMD3AT108 249,321
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    Nexperia PIMD3F

    TRANS PREBIAS 1NPN 1PNP 6TSOP
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    DigiKey PIMD3F Reel 10,000
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    Avnet Americas PIMD3F Reel 8 Weeks 20,000
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    Mouser Electronics PIMD3F
    • 1 $0.36
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    • 1000 $0.076
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    TTI PIMD3F Reel 20,000
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    Belden Inc FM4MFC1030MIMD3

    FMT OM4 MPO12(F-F) C 12F 30M
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FM4MFC1030MIMD3 Bulk 1
    • 1 $745.25
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    Mouser Electronics FM4MFC1030MIMD3
    • 1 $745.15
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    Nexperia PIMD3115

    Trans Digital BJT NPN/PNP 50V 100mA 6-Pin TSOP T/R - Tape and Reel (Alt: PIMD3,115)
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    Avnet Americas PIMD3115 Reel 27,000 8 Weeks 3,000
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    Avnet Asia PIMD3115 8 Weeks 15,000
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    IMD3 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IMD3 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IMD3A ROHM General purpose (dual digital transistors) Original PDF
    IMD3A ROHM General purpose (dual digital transistors) Original PDF
    IMD3A ROHM Digital Transistors Scan PDF
    IMD3AT108 ROHM Complex Transistor (DTR+DTR); Package: SMT6; Constitution materials list: Packing style: Taping; Package quantity: 3000; Original PDF
    IMD3AT108 ROHM Transistors (BJT) - Arrays, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS NPN/PNP SMT6 Original PDF
    IMD3AT110 ROHM General purpose (dual digital transistors) Original PDF
    IMD3AT148 ROHM General Purpose (Dual Digital Transistors) Original PDF

    IMD3 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    C4493

    Abstract: No abstract text available
    Text: Advance Product Information Sept. 1, 2004 5.6 Watt 3.5GHz Packaged HPA TGA2925-EPU-SD Key Features TGA2925 • • • • • • • • 3.5 GHz Application Frequency Range 11 dB Nominal Gain 37.5 dBm Nominal Psat Internally Partially Matched IMD3 -50 dBc @ 24 dBm SCL, Typical


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    PDF TGA2925-EPU-SD TGA2925 TGA2925-SD TGA2925 TGA2925-EPU-SD C4493

    Untitled

    Abstract: No abstract text available
    Text: Product Data Sheet September 27, 2002 TGA4501-SCC 24-31 GHz Ka Band HPA Key Features • 0.25 um pHEMT Technology • 23 dB Nominal Gain • 34.5 dBm Nominal P1dB • 40 dBm IMD3 Typical • Bias 6 V @ 2.1 A Primary Applications • Satellite Ground Terminal


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    PDF TGA4501-SCC TGA4501-SCC TGA4501 0007-inch

    HF250-50

    Abstract: ASI10615 250WPEP
    Text: HF250-50 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE 0.550 4L FLG The ASI HF250-50 is a 50 V epitaxial silicon NPN transistor, designed for SSB communications. E FEATURES: • PG = 14 dB min. at 250 W/30 MHz • IMD3 = 150 dBc max. at 250 W PEP


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    PDF HF250-50 HF250-50 ASI10615 ASI10615 250WPEP

    HF5-12S

    Abstract: ASI10591 HF512S
    Text: HF5-12S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF5-12S is Designed for broadband operation in commercial and amateur communication equipment up to 30 MHz. PACKAGE STYLE .380 4L STUD .112x45° FEATURES: C B • PG = 15 dB min. at 5 W/30 MHz • IMD3 = -30 dBc max. at 5 W PEP


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    PDF HF5-12S HF5-12S 112x45° ASI10591 ASI10591 HF512S

    TDA9937

    Abstract: No abstract text available
    Text: TDA9937: Features • D ual 10-bit resolution • IMD3: 74 dBc; fs = 737.28 Msps; fo = 140 MHz • 750 Msps maximum update rate • ACPR: 64 dBc; 2-carrier WCDMA; fs = 737.28 Msps; fo = 153.6 MHz • Selectable 4x or 8x interpolation filters • Typical 1.2 W power dissipation at 4x


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    PDF TDA9937: 10-bit 10-bit TDA9937# TDA9937

    Guide for Common Mode Filter Design Coilcraft

    Abstract: 0603CS LTC2208 LTC6400 LTC6401 LTC6401-20 LTC6401CUD-8 LTC6401IUD-8 g1318 LT 735
    Text: LTC6401-8 2.2GHz Low Noise, Low Distortion Differential ADC Driver for DC-140MHz FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION 2.2GHz –3dB Bandwidth Fixed Gain of 2.5V/V 8dB –92dBc IMD3 at 70MHz (Equivalent OIP3 = 50dBm)


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    PDF LTC6401-8 DC-140MHz 92dBc 70MHz 50dBm) 140MHz 44dBm) 135mW) 16-Lead LT6600-5 Guide for Common Mode Filter Design Coilcraft 0603CS LTC2208 LTC6400 LTC6401 LTC6401-20 LTC6401CUD-8 LTC6401IUD-8 g1318 LT 735

    medical ultrasound

    Abstract: ultrasound sonar MAX2034 MAX2034CTM MAX2034CTM-T sonar transmitter
    Text: 19-3969; Rev 1; 3/07 Quad-Channel, Ultra-Low-Noise Amplifier with Digitally Programmable Input Impedance *See the Ultrasound-Specific IMD3 Specification in the Applications Information section. GND GND VCC OUT3- OUT3+ VCC OUT2- OUT2+ GND OUT1- VCC OUT1+ OUT4-


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    PDF MAX2034 -68dBc -55dBc MAX2034 medical ultrasound ultrasound sonar MAX2034CTM MAX2034CTM-T sonar transmitter

    PD57006

    Abstract: B10TJ DB-57006-600 EXCELDRC35C GRM426C0G102J50 GRM426C0G151J50 GRM426X7R104K50 3214W-1-103E GRM42-6C0G151J50
    Text: DB-57006-600 RF POWER amplifier using 1 x PD57006 N-channel enhancement-mode lateral MOSFETs General Feature • Excellent thermal stability ■ Frequency: 300 - 600MHz ■ Supply voltage: 26V ■ Output power: 1W ■ Operation: class A ■ IMD3 2 tones test : < -40 dBc @ 1W avg


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    PDF DB-57006-600 PD57006 600MHz DB-57006-600 PD57006 B10TJ EXCELDRC35C GRM426C0G102J50 GRM426C0G151J50 GRM426X7R104K50 3214W-1-103E GRM42-6C0G151J50

    MRF466

    Abstract: MRF-466
    Text: MRF466 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .380 4L FLG The ASI MRF466 is Designed for power amplifier applications from 2.0 to 30MHz. B .112 x 45° A E C FEATURES: Ø.125 NOM. FULL R J .125 B • PG = 15 dB min. at 40 W/30 MHz • IMD3 = -30 dBc max. at 40 W PEP


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    PDF MRF466 MRF466 30MHz. MRF-466

    Untitled

    Abstract: No abstract text available
    Text: LTC6420-20 Dual Matched 1.8GHz Differential Amplifiers/ADC Drivers DESCRIPTION FEATURES n n n n n n n n n n n n n n Matched Gain ±0.1dB Matched Phase ±0.1° at 100MHz Channel Separation 80dB at 100MHz 1.8GHz –3dB Bandwidth; Fixed Gain of 10V/V 20dB IMD3 = –84dBc at 100MHz, 2VP-P


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    PDF LTC6420-20 100MHz 84dBc 100MHz, 46dBm 240mW) 20-Lead LTC6401-8/

    Untitled

    Abstract: No abstract text available
    Text: LTC6401-26 1.6GHz Low Noise, Low Distortion Differential ADC Driver for DC-140MHz FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION 1.6GHz –3dB Bandwidth Fixed Gain of 20V/V 26dB –85dBc IMD3 at 70MHz (Equivalent OIP3 = 46.5dBm)


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    PDF LTC6401-26 DC-140MHz 85dBc 70MHz 72dBc 140MHz 40dBm) 135mW) 16-Lead LT6600-5

    IMD3

    Abstract: 100DEG M67766B
    Text: M67766B IMD3,5,7 vs. Po IMD3 +25deg.C IMD5(+25deg.C) IMD7(+25deg.C) IMD3(-30deg.C) IMD5(-30deg.C) IMD7(-30deg.C) IMD3(+100deg.C) IMD5(+100deg.C) IMD7(+100deg.C) -5 -10 -15 IMD (dBc) -20 -25 -30 -35 -40


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    PDF M67766B 824MHz 50ohms 25deg -30deg IMD3 100DEG

    MRF428

    Abstract: No abstract text available
    Text: MRF428 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF428 is Designed for high voltage applications up to 30 MHz PACKAGE STYLE .500 4L FLG .112x45° L A FEATURES: • PG = 14 dB min. at 150 W/30 MHz • IMD3 = -30 dBc max. at 150 W PEP • Omnigold Metalization System


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    PDF MRF428 MRF428 112x45°

    BLW97

    Abstract: TRANSISTOR blw97 2050F
    Text: BLW97 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLW97 is Designed for High voltage applications up tp 30 MHz PACKAGE STYLE .500 4L FLG .112x45° FEATURES: L A C E FULL R • PG = 11.5 dB min. at 175 W/30 MHz • IMD3 = -30 dBc max. at 175 W PEP


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    PDF BLW97 BLW97 112x45° TRANSISTOR blw97 2050F

    power amplifier absolute AD 3600 SCHEMATIC

    Abstract: 1000 640114 LTC6401-14 0603CS LTC2208 LTC6400 LTC6401 LTC6401-20 LTC6401CUD-14 LTC6401IUD-14
    Text: LTC6401-14 2GHz Low Noise, Low Distortion Differential ADC Driver for DC-140MHz FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION 2GHz –3dB Bandwidth Fixed Gain of 5V/V 14dB –91dBc IMD3 at 70MHz (Equivalent OIP3 = 49.3dBm)


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    PDF LTC6401-14 DC-140MHz 91dBc 70MHz 81dBc 140MHz 135mW) 16-Lead LT6600-5 LT6600-10 power amplifier absolute AD 3600 SCHEMATIC 1000 640114 LTC6401-14 0603CS LTC2208 LTC6400 LTC6401 LTC6401-20 LTC6401CUD-14 LTC6401IUD-14

    zener 20w smd diode 1w

    Abstract: No abstract text available
    Text: DB-57006-600 RF POWER amplifier using 1 x PD57006 N-channel enhancement-mode lateral MOSFETs General Feature • Excellent thermal stability ■ Frequency: 300 - 600MHz ■ Supply voltage: 26V ■ Output power: 1W ■ Operation: class A ■ IMD3 2 tones test : < -40 dBc @ 1W avg


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    PDF DB-57006-600 PD57006 600MHz DB-57006-600 zener 20w smd diode 1w

    ltspice transformer

    Abstract: Low Bias Current Amplifiers Agilent RF MOSFET QFN
    Text: LTC6401-20 1.3GHz Low Noise, Low Distortion Differential ADC Driver for 140MHz IF FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION 1.3GHz –3dB Bandwidth Fixed Gain of 10V/V 20dB –93dBc IMD3 at 70MHz (Equivalent OIP3 = 50.5dBm)


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    PDF LTC6401-20 140MHz 140MHz. 16-bit ltspice transformer Low Bias Current Amplifiers Agilent RF MOSFET QFN

    Untitled

    Abstract: No abstract text available
    Text: EMD3 / UMD3N / IMD3A Transistors General purpose dual digital transistors EMD3 / UMD3N / IMD3A zExternal dimensions (Unit : mm) (3) 0.22 (4) (5) (6) (2) 0.5 0.5 1.0 1.6 EMD3 (1) 1.2 1.6 0.5 0.13 zFeatures 1) Both the DTA114E chip and DTC114E chip in a EMT


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    PDF DTA114E DTC114E

    AP601

    Abstract: AP601-F AP601-PCB1960 AP601-PCB2140 AP601-PCB900 JESD22-A114
    Text: AP601 High Dynamic Range 1.8W 28V HBT Amplifier Product Features Product Description • 800 – 2400 MHz • +32.5 dBm P1dB • -51 dBc ACLR @ ¼W PAVG • -55 dBc IMD3 @ ¼W PEP Functional Diagram The AP601 is a high dynamic range power amplifier in a lead-free/RoHS-compliant 5x6mm power DFN SMT


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    PDF AP601 AP601 JESD22-A114 JESD22-C101 J-STD-020 1-800-WJ1-4401 AP601-F AP601-PCB1960 AP601-PCB2140 AP601-PCB900 JESD22-A114

    Untitled

    Abstract: No abstract text available
    Text: www.ti.com THS4500 THS4501 SLOS350 – APRIL 2002 WIDEBAND, LOW-DISTORTION FULLY DIFFERENTIAL AMPLIFIERS FEATURES D Fully Differential Architecture D Bandwidth: 370 MHz D Slew Rate: 2800 V/µs D IMD3: –90 dBc at 30 MHz D OIP3: 49 dBm at 30 MHz D Output Common-Mode Control


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    PDF THS4500 THS4501 SLOS350 THS4500)

    Untitled

    Abstract: No abstract text available
    Text: MRF448 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The MRF448 is Designed for High Linearity Class AB HF Power Amplifier Applications up to 30 MHz. PACKAGE STYLE .500 4L FLG FEATURES: .112x45° L A • PG = 14 dB Typical at 220 W/30 MHz • IMD3 = -32 dBc Typ. at 220 W PEP


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    PDF MRF448 MRF448 112x45° ASI10866

    Untitled

    Abstract: No abstract text available
    Text: DGN-8 DGK-8 THS4500 THS4501 D-8 www.ti.com SLOS350D − APRIL 2002 − REVISED JANUARY 2004 WIDEBAND, LOWĆDISTORTION FULLY DIFFERENTIAL AMPLIFIERS FEATURES D Fully Differential Architecture D Bandwidth: 370 MHz D Slew Rate: 2800 V/µs D IMD3: −90 dBc at 30 MHz


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    PDF THS4500 THS4501 SLOS350D

    ASI10612

    Abstract: HF150-50F 37ad
    Text: HF150-50F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF150-50F is Designed for PACKAGE STYLE .500 4L FLG FEATURES: .112x45° L A • PG = 14 dB min. at 150 W/30 MHz • IMD3 = 100 dBc max. at 150 W PEP • Omnigold Metalization System FULL R


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    PDF HF150-50F HF150-50F 112x45° ASI10612 37ad

    ASI10596

    Abstract: HF50-12F
    Text: HF50-12F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .380 4L FLG The ASI HF50-12F is Designed for FEATURES: B .112 x 45° A E • PG = 16 dB min. at 50 W/30 MHz • IMD3 = -30 dBc max. at 30 W PEP • Omnigold Metalization System C Ø.125 NOM.


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    PDF HF50-12F HF50-12F ASI10596 ASI10596