TGA4501 Search Results

TGA4501 Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
TGA4501-EPU		TriQuint Semiconductor	28-31 GHz Ka Band HPA		Original	PDF
TGA4501-EPU		TriQuint Semiconductor	28-31 GHz Ka Band HPA		Original	PDF
TGA4501-SCC		TriQuint Semiconductor	RF Amplifier, General purpose amplifier, Single channel, Chip, 31000 MHz		Original	PDF

TGA4501 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: Product Data Sheet September 27, 2002 TGA4501-SCC 24-31 GHz Ka Band HPA Key Features • 0.25 um pHEMT Technology • 23 dB Nominal Gain • 34.5 dBm Nominal P1dB • 40 dBm IMD3 Typical • Bias 6 V @ 2.1 A Primary Applications • Satellite Ground Terminal	Original	PDF	TGA4501-SCC TGA4501-SCC TGA4501 0007-inch
136.21 Abstract: 901 704 16 08 55 TGA4501-EPU TGA4501-SCC 914-28 51815 Text: S-Parameter Data for TGA4501-SCC TGA4501-EPU Vd = 6V, Id = 2.12A ±5% Frequency GHz 20 20.1 20.2 20.3 20.4 20.5 20.6 20.7 20.8 20.9 21 21.1 21.2 21.3 21.4 21.5 21.6 21.7 21.8 21.9 22 22.1 22.2 22.3 22.4 22.5 22.6 22.7 22.8 22.9 23 23.1 23.2 23.3 23.4 23.5	Original	PDF	TGA4501-SCC TGA4501-EPU 136.21 901 704 16 08 55 TGA4501-EPU TGA4501-SCC 914-28 51815
Untitled Abstract: No abstract text available Text: Advanced Product Information August 2, 2002 TGA4501-EPU 28-31 GHz Ka Band HPA Key Features • 0.25 um pHEMT Technology • 23 dB Nominal Gain • 34.5 dBm Nominal P1dB • 40 dBm OTOI Typical • Bias 6 V @ 2.1 A Primary Applications • Satellite Ground Terminal	Original	PDF	TGA4501-EPU 0007-inch
TGA4505-EPU Abstract: No abstract text available Text: Product Data Sheet Not Recommended for New Designs July 22, 2003 TGA4501-SCC TriQuint Recommends the TGA4505-EPU be used for New Designs 24-31 GHz Ka Band HPA Key Features • 0.25 um pHEMT Technology • 23 dB Nominal Gain • 34.5 dBm Nominal P1dB • 40 dBm IMD3 Typical	Original	PDF	TGA4501-SCC TGA4505-EPU TGA4501 0007-inch
TGA4501-SCC Abstract: No abstract text available Text: Not Recommended for New Designs Product Data Sheet November 19, 2003 TGA4501-SCC TriQuint Recommends the TGA4505-EPU be used for New Designs 24-31 GHz Ka Band HPA Key Features • 0.25 um pHEMT Technology • 23 dB Nominal Gain • 34.5 dBm Nominal P1dB •	Original	PDF	TGA4501-SCC TGA4505-EPU TGA4501 0007-inch
TGA4501-SCC Abstract: No abstract text available Text: Product Data Sheet October 7, 2002 TGA4501-SCC 24-31 GHz Ka Band HPA Key Features • 0.25 um pHEMT Technology • 23 dB Nominal Gain • 34.5 dBm Nominal P1dB • 40 dBm IMD3 Typical • Bias 6 V @ 2.1 A Primary Applications • Satellite Ground Terminal	Original	PDF	TGA4501-SCC TGA4501-SCC TGA4501 0007-inch
Untitled Abstract: No abstract text available Text: Advanced Product Information December 14, 2001 TGA4501-EPU 28-31 GHz Ka Band HPA Key Features • 0.25 um pHEMT Technology • 18 dB Nominal Gain • 34.5 dBm Nominal P1dB • 40 dBm OTOI Typical • Bias 6 V @ 2.1 A Primary Applications • Satellite Ground Terminal	Original	PDF	TGA4501-EPU 0007-inch
TGA4501-EPU Abstract: No abstract text available Text: Advanced Product Information December 14, 2001 TGA4501-EPU 28-31 GHz Ka Band HPA Key Features • 0.25 um pHEMT Technology • 18 dB Nominal Gain • 34.5 dBm Nominal P1dB • 40 dBm OTOI Typical • Bias 6 V @ 2.1 A Primary Applications • Satellite Ground Terminal	Original	PDF	TGA4501-EPU 0007-inch TGA4501-EPU
ka band high power fet amplifier schematic Abstract: No abstract text available Text: 0.25-µm mmW pHEMT 2MI Process Data Sheet 4.6 µm PLATING CAP TOP PLATE 2000 Å NITRIDE 0.75 µm FIRST METAL TaN RESISTOR T-GATE ACTIVE REGION OHMIC METAL EXCEPT VIA SEMI-INSULATING GaAs SUBSTRATE VIA UNDER CAP 0.25-µm 2MI Process Cross Section General Description	Original	PDF
12 volt-30 amp power diode Abstract: ka-band amplifier high power fet amplifier schematic fet ft 30 GHZ ka band high power fet amplifier schematic pHEMT transistor ka-band mixer 10 ghz driver amplifier FET differential amplifier circuit Ka-band Text: 0.25-µm mmW pHEMT 2MI Process Data Sheet 4.6 µm PLATING CAP TOP PLATE 2000 Å NITRIDE 0.75 µm FIRST METAL TaN RESISTOR T-GATE ACTIVE REGION OHMIC METAL EXCEPT VIA SEMI-INSULATING GaAs SUBSTRATE VIA UNDER CAP 0.25-µm 2MI Process Cross Section General Description	Original	PDF