Untitled
Abstract: No abstract text available
Text: IBM0116400M IBM0116400P 4M x 4 Low Power DRAM Features • 4,194,304 w ord by 4 bit organization • Single 3.3V ± 0.3V or 5.0V ± 0.5V pow er supply • 4096 refresh cycles/256m s • High Perform ance: -50 -60 -70 • Low Power Dissipation - A ctive max - 95m A /85m A /75m A /65m A
|
OCR Scan
|
PDF
|
IBM0116400M
IBM0116400P
cycles/256m
200nA
|
IBM0117400T1 -60
Abstract: No abstract text available
Text: i = = = - = • = I B M 0 1 I B M 0 1 1 7 4 0 0 B P relim in ary 1 7 4 0 0 4M x 4 DR AM Features • 4,194,304 w ord by 4 bit organization • Single 3.3V ± 0.3V or 5.0V ± 0.5V pow er supply • 2048 refresh cyd e s/32 m s • Low Power Dissipation - A c tiv e m a x -140m A /125m A /110m A /100m A
|
OCR Scan
|
PDF
|
-140m
/125m
/110m
/100m
43G9648
MMDD28DSU-00
IBM0117400T1 -60
|
"soj 26" dram 80 ns
Abstract: No abstract text available
Text: IBM0116400 IBM0116400B 4M x 4 DRAM Features • 4,194,304 w ord by 4 bit organization • S ingle 3.3V + 0.3V o r 5.0V + 0.5V power supply • 4096 refresh cycles/64m s • Low Power Dissipation - Active max - 95m A /85m A /75m A /65m A - S tandby (TTL Inputs) - 2 .0 m A (max)
|
OCR Scan
|
PDF
|
IBM0116400
IBM0116400B
cycles/64m
J-28/24
ilx725m
J-26/24
ilx675m
MMDD30DSU-00
43G9611
"soj 26" dram 80 ns
|