IBM0116400M Search Results
IBM0116400M Datasheets (6)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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IBM0116400MJ1-50 |
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DRAM | Original | |||
IBM0116400MJ1-60 |
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DRAM | Original | |||
IBM0116400MJ1-70 |
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DRAM | Original | |||
IBM0116400MT1-50 |
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DRAM | Original | |||
IBM0116400MT1-60 |
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DRAM | Original | |||
IBM0116400MT1-70 |
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DRAM | Original |
IBM0116400M Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: IBM0116400 IBM0116400M IBM0116400B IBM0116400P 4M x 4 12/10 DRAM Features • 4,194,304 word by 4 bit organization • Single 3.3V ± 0.3V or 5.0V ± 0.5V power supply • Standard Power SP and Low Power (LP) • 4096 Refresh Cycles - 64 ms Refresh Rate (SP version) |
OCR Scan |
IBM0116400 IBM0116400M IBM0116400B IBM0116400P SA14-4203-06 200nA | |
IBM0116400MContextual Info: IBM0116400M 4M x 412/10, 5.0V, LP, SR. IBM0116400P 4M x 412/10, 3.3V, LP, SR. IBM01164B0 IBM01164D0 4M x 4 Stacked DRAM Features • 4,194,304 word by 4 bit organization by 2 High • Package: • 4,194,304 word by 4 bit organization by 4 High • Low Power Dissipation per deck |
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IBM0116400M IBM0116400P IBM01164B0 IBM01164D0 85mA/75mA TSOJ-32 400milx825mil) | |
IBM01164004M
Abstract: IBM0116400B4M IBM0116400M IBM0116400P
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IBM01164004M IBM0116400P IBM0116400M IBM0116400B4M IBM0116400 IBM0116400M IBM0116400B IBM0116400P | |
Contextual Info: IBM0116400 IBM0116400M IBM0116400B IBM0116400P 4M x 4 12/10 DRAM Features • Low Power Dissipation - Active max - 85 mA / 75 mA / 65 mA - Standby: TTL Inputs (max) - 2.0 mA - Standby: C M O S Inputs (max) - 1.0 mA (SP version) - 0.2 mA (LP version) - Self Refresh (LP version only) |
OCR Scan |
IBM0116400 IBM0116400M IBM0116400B IBM0116400P | |
Contextual Info: IBM0116400 IBM0116400M IBM0116400B IBM0116400P 4M x 4 12/10 DRAM Features • 4,194,304 word by 4 bit organization • Single 3.3V ± 0.3V or 5.0V ± 0.5V power supply • Standard Power SP and Low Power (LP) • 4096 Refresh Cycles - 64 ms Refresh Rate (SP version) |
OCR Scan |
IBM0116400 IBM0116400M IBM0116400B IBM0116400P 110ns 200nA 300nA SA14-4203-04 | |
Contextual Info: IBM0116400M IBM0116400P 4M x 4 Low Power DRAM Features • 4,194,304 w ord by 4 bit organization • Single 3.3V ± 0.3V or 5.0V ± 0.5V pow er supply • 4096 refresh cycles/256m s • High Perform ance: -50 -60 -70 • Low Power Dissipation - A ctive max - 95m A /85m A /75m A /65m A |
OCR Scan |
IBM0116400M IBM0116400P cycles/256m 200nA | |
Contextual Info: IBM0116400 IBM0116400M IBM0116400B IBM0116400P 4M x 4 12/10 DRAM Features • Low Power Dissipation • 4 ,194,304 word by 4 bit organization • Single 3.3V ± 0.3V or 5.0V ± 0.5V power supply • Standard Power SP and Low Power (LP) • 4 096 Refresh Cycles |
OCR Scan |
IBM0116400 IBM0116400M IBM0116400B IBM0116400P 110ns 200nA 300nA IBM0116400P 0116400B | |
IBM01164004M
Abstract: IBM0116400B4M IBM0116400M
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IBM01164004M IBM0116400P IBM0116400M IBM0116400B4M IBM0116400 IBM0116400M IBM0116400B IBM0116400P | |
Contextual Info: IBM0116400 IBM0116400M IBM0116400B IBM0116400P 4M x 4 12/10 DRAM Features • 4,194,304 word by 4 bit organization • Single 3.3V + 0.3V or 5.0V + 0.5V power supply • Standard Power SP and Low Power (LP) • 4096 Refresh Cycles - 64 ms Refresh Rate (SP version) |
OCR Scan |
IBM0116400 IBM0116400M IBM0116400B IBM0116400P SA14-4203-06 | |
Contextual Info: Discontinued 9/98 - last order; 3/99 last ship IBM01164004M x 412/10, 5.0VMMDD31DSU-011010328. IBM0116400P 4M x 412/10, 3.3V, LP, SRMMDD31DSU-011010328. IBM0116400M 4M x 412/10, 5.0V, LP, SRMMDD31DSU-011010328. IBM0116400B4M x 412/10, 3.3VMMDD31DSU-011010328. |
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IBM01164004M 0VMMDD31DSU-011010328. IBM0116400P SRMMDD31DSU-011010328. IBM0116400M IBM0116400B4M 3VMMDD31DSU-011010328. IBM0116400 IBM0116400M | |
Contextual Info: IBM0116400 IBM0116400M IBM0116400B IBM0116400P 4M x 4 12/10 DRAM Features • 4 ,194,304 word by 4 bit organization • Single 3.3V ± 0 .3V or 5.0V ± 0 .5V power supply • Standard Power SP and Low Power (LP) • 4096 Refresh Cycles - 64 ms Refresh Rate (SP version) |
OCR Scan |
IBM0116400 IBM0116400M IBM0116400B IBM0116400P 350ns 350ns) | |
IBM0116400B4M
Abstract: IBM01164004M IBM0116400M
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IBM01164004M IBM0116400P IBM0116400M IBM0116400B4M IBM0116400 IBM0116400M IBM0116400B IBM0116400P | |
IBM0116400MContextual Info: IBM0116400M 4M x 412/10, 5.0V, LP, SR. IBM0116400P 4M x 412/10, 3.3V, LP, SR. IBM01164B0 IBM01164D0 4M x 4 Stacked DRAM Features • 4,194,304 word by 4 bit organization by 2 High • 4,194,304 word by 4 bit organization by 4 High • Single 3.3V or 5.0V power supply |
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IBM0116400M IBM0116400P IBM01164B0 IBM01164D0 85mA/75mA 110ns 130ns | |
2m x 32 SRAM SIMM
Abstract: IBM11M4735CB SIMM 72 IBM0116400M IBM038329P IBM025161L dimm 168
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IBM0116160 IBM0116160B IBM0116160M IBM0116160P IBM0116165 IBM0116165B IBM0116165M IBM0116165P IBM0116400 IBM0116400B 2m x 32 SRAM SIMM IBM11M4735CB SIMM 72 IBM0116400M IBM038329P IBM025161L dimm 168 | |
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0316809cContextual Info: Alphanumeric Index Part Num ber Type O rganization Features Page Num ber IBM011616 0. D R A M . 1M x 1 6 . 12/8, 5 .0 V . . 249 IBM0116160 B . . D R A M . 1M x 1 6 . 12/8, 3 .3 V . 249 |
OCR Scan |
IBM011616 IBM0116160 IBM0116160M IBM0116160P. IBM011618 IBM0165800B. 0316169C 0316409C 0316809C 0316809c | |
0118160B
Abstract: 0116165B 014400B 0117805 014400
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OCR Scan |
IBM0116160M 0116160P. 0116165B. 0116165M 0118160B 0116165B 014400B 0117805 014400 | |
64mb edo dram simm
Abstract: 8Mb SDRAM 5.0v memory 2mb 72-pin simm simm72 IBM11S43 ram 168 pin 8k refresh simm DIMM 72 pin out edo dram 72-pin simm
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014400B
Abstract: 0117800B
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OCR Scan |