IGBT FAILURE FIT Search Results

OF IGBT

Abstract: IGBT Power Module siemens ag siemens igbt BSM 150 gb 100 d siemens igbt igbt module bsm 300 siemens igbt BSM 300 reliability report and tests for failure rate how can test igbt siemens igbt BSM 75 gb 100 Siemens BSM 50 GB 100 DN1
Contextual Info: Status Report for the Improvement Programme for Siemens IGBT Modules Contents: 1. Scope and Reliability requirements 2. Investigations regarding Temperature Cycling and Power Cycling 3. Results of Temperature and Power Cycling tests 4. Figures on Lifetime and Failure Rate

GT 1081

Abstract: MAS 10 RCD IGBT GT 1081 igbt 3 KA transistor GT 1081 T1791 rcd 103 35d56 DS30 GS11
Contextual Info: Click on outline no. IGBT and GCT - Freewheeling Diodes Type V DRM V D 1031 SH D 1331 SH D 1641 SX D 1181 SX D 1441 SX D 931 SH D 1131 SH *) 4500 4500 4500 6000 6000 6500 6500 estimate failure rate λ ~ 100 fit V(D)D *) I(FSM) ∫i2dt V(F)/I(FM) kV kA A²s

infineon mtbf

Abstract: MTBF IGBT MTBF IGBT fit igbt failure fit mtbf infineon igbt infineon 10000Fit igbt failure igbt failure rate
Contextual Info: APPLICATION NOTE Page 1 von 2 Definition of FIT and MTBF A failure rate λ=is defined by the number of failures r during a specific test time t of n components: λ= r n ⋅t The unit for failure rates is 1 fit failures in time = 1*10-9h-1, meaning one failure in 109 operation hours of the device.

powerful welding inverter

Abstract: ULTRASONIC MODULE us Econo flexible neon 3 phase IGBT inverter design Ultrasonic welding driver igbt inverter design 300A 1200V IGBT infineon rectifier three phase 100a igbt 1600v 100A
Contextual Info: Product Brief EconoPACK 4 Main Features • The new world standard ■ EconoPACK™ 4 perfectly fits into the well-known Econo range. EconoPACK™ 4 features screw power terminals providing excellent electric connection. DC and AC link are separated and distinguishable at one glance for ease of use.

Industrial Drives

Abstract: V23990-P849-A48-PM P849A
Contextual Info: V23990-P849-*4*-PM datasheet flow PIM 0 3rdgen 1200 V / 8 A flow PIM 0 3rdgen Features ● 2 Clips housing in 12 and 17mm height ● Trench Fieldstop Technology IGBT4 ● Optional w/o BRC Target Applications 12mm Press-fit pins 12mm Solder pins 17mm Press-fit pins

Contextual Info: 10-FZ06NRA084FP02-P969F68 10-PZ06NRA084FP02-P969F68Y target datasheet flowNPC 0 600V/75A & 99mΩ PS* Features flow0 12mm flow0 Press-fit ● PS*: parallel switch for high speed and efficiency ● neutral point clamped inverter ● reactive power and LVRT capability

Contextual Info: 10-FZ06NRA069FP02-P967F68 10-PZ06NRA069FP02-P967F68Y target datasheet flowNPC 0 600V/60A & 99mΩ PS* Features flow0 12mm flow0 Press-fit ● PS*: parallel switch for high speed and efficiency ● neutral point clamped inverter ● reactive power and LVRT capability

T0340VB

Abstract: d686* transistor transistor c 2060 T0340VB45G 2008AN01 Westcode Semiconductors transistor 2060A D-68623 westcode igbt
Contextual Info: WESTCODE An Date:- 2 Dec, 2010 Data Sheet Issue:- 1 IXYS Company Provisional Data Insulated Gate Bi-Polar Transistor Type T0340VB45G Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate.

T1600GB45G

Abstract: T1600 IC 7418 datasheet transistor polar D-68623 ixys application note igbt 3 KA transistor 1GE
Contextual Info: WESTCODE An Date:- 3 Dec, 2010 Data Sheet Issue:- 1 IXYS Company Prospective Data Insulated Gate Bi-Polar Transistor Type T1600GB45G Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate.

T0800EB

Abstract: 2008AN01 T0800 transistor P1 P 12 T0800EB45G MAR 208 transistor
Contextual Info: WESTCODE An Date:- 23 Dec, 2010 Data Sheet Issue:- P1 IXYS Company Prospective Data Insulated Gate Bi-Polar Transistor Type T0800EB45G Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate.

T0850VB

Contextual Info: WESTCODE An Date:- 21 Jan, 2011 Data Sheet Issue:- P1 IXYS Company Prospective Data Insulated Gate Bi-Polar Transistor Type T0850VB25E Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 2500 V VDC link Permanent DC voltage for 100 FIT failure rate.

Contextual Info: WESTCODE An Date:- 21 Jan, 2011 Data Sheet Issue:- P1 IXYS Company Prospective Data Insulated Gate Bi-Polar Transistor Type T0850VB25E Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 2500 V VDC link Permanent DC voltage for 100 FIT failure rate.

T1200EA45E

Abstract: transistor polar D-68623 T1200
Contextual Info: Date:- 21 Nov, 2005 Provisional Data  Data Sheet Issue:- 3 Absolute Maximum Ratings VOLTAGE RATINGS   Insulated Gate Bi-Polar Transistor Type T1200EA45E MAXIMUM LIMITS UNITS Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate

T2400GA45E

Abstract: MJ6000 T2400
Contextual Info: Date:- 22 Nov, 2005 Data Sheet Issue:- 1 Prospective Data

  Insulated Gate Bi-Polar Transistor Type T2400GA45E Absolute Maximum Ratings MAXIMUM LIMITS VOLTAGE RATINGS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate

T0500NB25E

Contextual Info: WESTCODE An Date:- 5 Sep, 2011 Data Sheet Issue:- P1 IXYS Company Prospective Data Insulated Gate Bi-Polar Transistor Type T0500NB25E Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 2500 V VDC link Permanent DC voltage for 100 FIT failure rate.

Contextual Info: WESTCODE An Date:- 25 Jan, 2011 Data Sheet Issue:- P1 IXYS Company Prospective Data Insulated Gate Bi-Polar Transistor Type T2250AB25E Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 2500 V VDC link Permanent DC voltage for 100 FIT failure rate.

T2250AB

Contextual Info: WESTCODE An Date:- 25 Jan, 2011 Data Sheet Issue:- P1 IXYS Company Prospective Data Insulated Gate Bi-Polar Transistor Type T2250AB25E Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 2500 V VDC link Permanent DC voltage for 100 FIT failure rate.

9544 transistor

Abstract: TRANSISTOR 9642 IRG4PC50U irg4ph50ud igbt failure IRG4PC40UD2 HTGB IRGPH60UD2 IRGBC20FD rectifier IGBT
Contextual Info: Quarterly Reliability Report for T0247 / T0220 Products Manufactured at IRGB IGBT / CoPack ISSUE.3. October 1997 IGBT / CoPack Quarterly Reliability Report Page 1 of 35 Contents 1 Introduction 2 Reliability Information 3 Environmental Test Results 4 Environmental Test Conditions / Schematics

TRANSISTOR 9642

Abstract: 9544 transistor T0247 package what is fast IGBT transistor IRG4PC50U Equivalent transistors for IRG4PC50U IRG4BC20FD 600V 16 TO220 IRGPC40U irg4ph50ud IRGB440U
Contextual Info: Quarterly Reliability Report for T0247 / T0220 Products Manufactured at IRGB IGBT / CoPack ISSUE.3. October 1997 IGBT / CoPack Quarterly Reliability Report Page 1 of 35 Contents 1 Introduction 2 Reliability Information 3 Environmental Test Results 4 Environmental Test Conditions / Schematics

MJ 5030

Abstract: T0900TA52E
Contextual Info: Date:- 17 Jun, 2003 Provisional Data  Data Sheet Issue:- 2 Absolute Maximum Ratings VOLTAGE RATINGS   Insulated Gate Bi-Polar Transistor Type T0900TA52E MAXIMUM LIMITS UNITS Collector – emitter voltage 5200 V VDC link Permanent DC voltage for 100 FIT failure rate.

T2400GA45E

Abstract: T2400 D-68623
Contextual Info: Date:- 5 March, 2007 Data Sheet Issue:- 2 Provisional Data Insulated Gate Bi-Polar Transistor Type T2400GA45E Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate

T0800TB45E

Abstract: T0800 D-68623 S200N d686 IGBT 800 cr 406 transistor E0900NC45C
Contextual Info: WESTCODE An Date:- 14 July, 2011 Data Sheet Issue:- P1 IXYS Company Prospective Data Insulated Gate Bi-Polar Transistor Type T0800TB45E Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate.

Contextual Info: Date:- 1 April, 2011 Data Sheet Issue:- A2 Advance Data Insulated Gate Bi-Polar Transistor Type T2400GB45E Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate

Mitsubishi Electric IGBT MODULES

Abstract: transistor free CM600DY-24NF mitsubishi j 170 a ignition module igbt welding machine scheme 37Kw motor CM600DU-12F CM600DY-24A calculation of IGBT snubber CM300DY-24NF
Contextual Info: IGBT Modules Application Note The 5 t h Generation [ CSTBT TM ] IGBT C hip use 12NF/24NF/24A series  Dec. 2007  Notice for Safe Designs •Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is