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    KEMET Corporation T491D686K006AT

    CAP TANT 68UF 10% 6.3V 2917
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    Kyocera AVX Components TPSD686K020R0300

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    TPSD686K020R0300 Digi-Reel 1,461 1
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    Kyocera AVX Components TPSD686K020R0200

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    Vishay Sprague 293D686X0020E2TE3

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    New Advantage Corporation 293D686X0020E2TE3 9,600 1
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    Vishay Sprague 150D686X9015R2B

    CAP TANT 68UF 10% 15V AXIAL
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    D686 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    40N120

    Abstract: IXRH 50N120 40N120 DATASHEET 50N120 bi-directional switches IGBT induction heating D-68623
    Text: IXRH 40N120 Advanced Technical Information VCES = 1200 V IC25 = 55 A VCE sat = 2.2 V IGBT with Reverse Blocking capability C TO-247 AD G C E G E G = Gate, E = Emitter, C = Collector, TAB = Collector Features IGBT Conditions VCES TVJ = 25°C to 150°C Maximum Ratings


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    40N120 O-247 40N120 IXRH 50N120 40N120 DATASHEET 50N120 bi-directional switches IGBT induction heating D-68623 PDF

    35N120D1

    Abstract: D-68623 IXER 35N120D1
    Text: IXER 35N120D1 NPT3 IGBT with Diode IC25 = 50 A = 1200 V VCES VCE sat typ. = 2.2 V in ISOPLUS 247TM ISOPLUS 247TM E153432 C G G C E Isolated Backside* E G = Gate C = Collector E = Emitter *Patent pending Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C


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    35N120D1 247TM E153432 35N120D1 D-68623 IXER 35N120D1 PDF

    35N100U1

    Abstract: irm 38 D-68623 ixsn35n100u1
    Text: IGBT with Diode IXSN 35N100U1 VCES IC25 VCE sat = 1000 V = 38 A = 3.5 V High Short Circuit SOA Capability 3 2 4 Symbol Test Conditions V CES TJ = 25°C to 150°C 1 Maximum Ratings 1000 V CGR TJ = 25°C to 150°C; RGE = 1 MΩ V GES V GEM A Continuous ±20


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    35N100U1 OT-227 50/orporation D-68623 35N100U1 irm 38 ixsn35n100u1 PDF

    HTZ240F10K

    Abstract: D-68623 HTZ240F12K HTZ240F14K HTZ240F16K
    Text: HTZ240F Series LARONTROL High Voltage Diode Rectifier Module IF AV = 1.7 A VRRM = 16000 V Type Number Repetitive Peak Minimum Avalanche Voltage V(BR)R HTZ240F16K HTZ240F14K HTZ240F12K HTZ240F10K 16000 14000 12000 10000 17000 15000 13000 11000 CIRCUIT DIAGRAM


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    HTZ240F HTZ240F16K HTZ240F14K HTZ240F12K HTZ240F10K D-68623 HTZ240F10K HTZ240F12K HTZ240F14K HTZ240F16K PDF

    36N60

    Abstract: 32N60 IXFN SOT227 fast diode SOT-227 D-68623
    Text: IXFK 32N60 IXFK 36N60 IXFN 32N60 IXFN 36N60 Preliminary Data VDSS HiPerFETTM Power MOSFET ID25 RDS on t rr IXFK/FN 36N60 600V 36A IXFK/FN 32N60 600V 32A 0.18Ω 0.25Ω 250ns 250ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr TO-264 AA (IXFK)


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    32N60 36N60 36N60 32N60 250ns O-264 IXFN SOT227 fast diode SOT-227 D-68623 PDF

    D-68623

    Abstract: No abstract text available
    Text: VWI 6-12P1 IC25 IGBT Module VCES VCE sat typ. Sixpack in ECO-PAC 2 S9 Preliminary data L9 N5 =6A = 1200 V = 3.9 V K 12 N9 R5 NTC X 18 W 14 J 13 A5 D5 H5 A1 F3 C1 K 10 G1 Pin arrangement see outlines Features IGBTs Conditions Maximum Ratings VCES TVJ = 25°C to 150°C


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    6-12P1 B25/50 D-68623 PDF

    IXDD408PI

    Abstract: IXDD408 Ultrafast MOSFET Driver 2N7000 IXDD480 VM0580-02F IC TTL 4700 cd4049a fully protected p channel mosfet 2N7000 TO220
    Text: IXDD408PI / 408SI / 408YI / 408CI 8 Amp Low-Side Ultrafast MOSFET Driver Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes. • Latch Up Protected • High Peak Output Current: 8A Peak • Operates from 4.5V to 25V


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    IXDD408PI 408SI 408YI 408CI 2500pF IXDD408 IXDD480 Edisonstrasse15 D-68623; Ultrafast MOSFET Driver 2N7000 VM0580-02F IC TTL 4700 cd4049a fully protected p channel mosfet 2N7000 TO220 PDF

    Untitled

    Abstract: No abstract text available
    Text: Date:- 23 October, 2013 Data Sheet Issue:- 6 Rectifier Diode Types W3270N#200 and W3270N#220 Old Type No.: SW20-22CXC14C Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VRRM Repetitive peak reverse voltage, note 1 2000-2200 V VRSM Non-repetitive peak reverse voltage, (note 1)


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    W3270N SW20-22CXC14C PDF

    480 diode

    Abstract: No abstract text available
    Text: Date:- 9th May, 2013 Data Sheet Issue:- A1 Provisional Data Rectifier Diode Types W5139T#420 to W5139T#480 Development Type No.: WX377T#480 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VRRM Repetitive peak reverse voltage, note 1 4200-4800


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    W5139T WX377T 480 diode PDF

    T0258HF65G

    Abstract: No abstract text available
    Text: Date:- 27 Jan, 2014 Data Sheet Issue:- A1 Advance Data Insulated Gate Bi-Polar Transistor Type T0258HF65G Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 6500 V VCES Collector – emitter voltage Tj 25°C


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    T0258HF65G T0258HF65G PDF

    Brown Boveri induction Motor

    Abstract: sj 2025 ic sj 2025 ASEA fast thyristor berulub F GD Rectifiers BROWN BOVERI servo motor bn16 brown Boveri diode Diode BN16
    Text: IGBT Module Half-Bridge Configuration VII200-12G4 IC DC VCES VCE(sat) 3 High Short Circuit SOA Capability Symbol Test Conditions VCES VCGR T J = 25°C to 150°C T J = 25°C to 150°C; RGE = 1 MΩ VGES VGEM Continuous Transient IC25 IC100 ICM T C = 25°C


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    VII200-12G4 IC100 Brown Boveri induction Motor sj 2025 ic sj 2025 ASEA fast thyristor berulub F GD Rectifiers BROWN BOVERI servo motor bn16 brown Boveri diode Diode BN16 PDF

    Untitled

    Abstract: No abstract text available
    Text: □IXYS Fast Recovery Epitaxial Diode FRED DSEI 2x101 1200 V V RRM 2x99 A F(AV)M t Preliminary data 40 ns rr miniBLOC, SOT-227 B V rSM V 1200 Symbol Type V rrm V Test Conditions -N - -Ho Maximum Ratings (per diode) 140 99 TBD A A A t = 10 ms (50 Hz), sine


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    2x101 OT-227 2x101-12A D-68623 PDF

    Untitled

    Abstract: No abstract text available
    Text: 4bflfc.E2b G G D 1 7 C11 3ÖT • IXY □IXYS IGBT with Diode IXSN50N60U1 I, CES High Short Circuit SOA Capability CE sat = 53 A = 600 V = 2.5 V 2 ■ 4" é 'T n Symbol Test Conditions VcES T, = 25°C to 150°C 600 V Vo» Tj = 25°C to 150°C; R ^ = 1 MQ


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    IXSN50N60U1 OT-227 E72873 D-68619 PDF

    Untitled

    Abstract: No abstract text available
    Text: □IXŸS DSSK 70-008A Power Schottky Rectifier •f a v with common cathode V rrm VF v RSM v rr« V V 70 70 i- j Typ e A DSSK 70-008A C 1 2x35 A 70 V 0.66 V TO-247 AD A C TAB Symbol Test Conditions Maximum Ratings 70 35 70 A A A 700 A lAS = tbd A; L = 180 pH; TVJ = 25°C; non repetitive


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    0-008A O-247 D98004E D-68623 GGD473Ã PDF

    din IEC 68

    Abstract: 150a gto GTO 100A IXYS 40N60A D-68623 DWEP 17-12 DWEP DWlP 2580B L 7CG
    Text: Contents Page Symbols and Definitions Nomenclature General Information Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types S-Series, SCSOA Capability, Fast Types


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    PDF

    vm0580-02f

    Abstract: ixdd414 2N7002/PLP lm339 igbt driver 2N7002 12w smps LM339 414CI IXDD414PI 2N7000 MOSFET protection driving mosfet/igbt with pulse transformer driver
    Text: IXDD414PI / 414YI / 414CI 14 Amp Low-Side Ultrafast MOSFET Driver Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes. • Latch-Up Protected • High Peak Output Current: 14A Peak • Wide Operating Range: 4.5V to 25V


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    IXDD414PI 414YI 414CI IXDD414 IXDD414PI IXDD414YI IXDD414CI O-263 O-220 vm0580-02f 2N7002/PLP lm339 igbt driver 2N7002 12w smps LM339 414CI 2N7000 MOSFET protection driving mosfet/igbt with pulse transformer driver PDF

    IXDD415SI

    Abstract: IXDD415 Ultrafast MOSFET Driver Class E amplifier 2N3904 D-68623 EVDD415 IR high voltage gate driver ic chips
    Text: IXDD415SI Dual 15 Ampere Low-Side Ultrafast MOSFET Driver Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up Protected • High Peak Output Current: Dual 15A Peak • Wide Operating Range: 8V to 30V


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    IXDD415SI IXDD415 Edisonstrasse15 D-68623; IXDD415SI Ultrafast MOSFET Driver Class E amplifier 2N3904 D-68623 EVDD415 IR high voltage gate driver ic chips PDF

    IXSH15N120AU1

    Abstract: IC-90
    Text: IXSH15N120AU1 PRELIMINARY DATA SHEET IGBT with Diode IC25 = 30 A VCES = 1200 V VCE sat = 4.0 V "S" Series - Improved SCSOA Capability C G E Symbol Test Conditions Maximum Ratings V CES T J = 25°C to 150°C 1200 V V CGR T J = 25°C to 150°C; RGE = 1 MΩ


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    IXSH15N120AU1 -100A/ D-68619; IXSH15N120AU1 IC-90 PDF

    1xys

    Abstract: IXTN36N50 36N50 E72873 IXTN36N45
    Text: • 4bûbE2b 0001Û11 TTñ ■ I X Y □IXYS Pow er M O S F E T IX TN 36N 45 IX TN 36N 50 N-Channel Enhancement Mode Symbol Test Conditions V oss T j = 25°C to 150°C Maximum Ratings IXTN36N45 IXTN36N50 450 500 V V V oc* ^ = 25°C to 150°C ;R es=10kQ 500


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    IXTN36N45 IXTN36N50 IXTN36N45 Cto150Â IXTN36N D-68619; 1xys IXTN36N50 36N50 E72873 PDF

    MCD500

    Abstract: ixys MCC 90 D-68623
    Text: Date: 19.09.2005 IXYS Data Sheet Issue: 3 Thyristor/Diode Modules M## 500 Absolute Maximum Ratings VRRM VDRM [V] MCC MCD MDC MCA MCK MCDA MDCA 2000 500-20io1 500-20io1 500-20io1 500-20io1 500-20io1 500-20io1 500-20io1 2200 500-22io1 500-22io1 500-22io1 500-22io1


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    500-20io1 500-22io1 MCD500 ixys MCC 90 D-68623 PDF

    Untitled

    Abstract: No abstract text available
    Text: H b û b 2 2 b 0 0 0 1 Ö 0 3 ^21 I IX Y ID IXYS IG B T w ith D io d e ÌX S N 3 0 N 10 0 A U 1 CES High Short Circuit SOA Capability CE sat = 34 A = 1000 V =4V 2 é * 'T i Symbol Test Conditions V«s Tj = 25°C to 150°C 1000 V v«* Tj = 25°C to 150°C; RGE= 1 M£2


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    D-68619; 4bflb22b D-68619 PDF

    Untitled

    Abstract: No abstract text available
    Text: □IX Y S MEA / MEE / MEK 300-06DA Preliminary Data V RRM = 1200V Fast Recovery Epitaxial Diode FRED Module 600V 600V 1 rÎ I 2 3 Jj i, 2 r| 1 M 1 W l| 1 L ' frm TVJ = 45CC TVJ = 150°C Jpdt TVJ = 45° C TVJ = 150°C 1 I N I l< v , S0L t = 10 ms t = 8.3 ms


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    300-06DA 300-012DA 300-12DA D-68623 PDF

    ixys dsei 2x61-06C

    Abstract: No abstract text available
    Text: Mt a b PZ b D D G i a S 3 7 1 T • I X Y D I X Y S DSEI 2x61 Fast Recovery Epitaxial Diodes lFAV = 2x60 A VRRM = 400-600 V tn < 35 ns miniBLOC, SOT-227 B V V 440 540 640 400 500 600 2 • DSEI 2x61-04C DSEI 2x61-05C DSEI 2x61-06C 1 1 o-J H Ho 3 -« 4


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    OT-227 2x61-04C 2x61-05C 2x61-06C D-68619 ixys dsei 2x61-06C PDF

    Untitled

    Abstract: No abstract text available
    Text: 11 Y\. YS mma f X 1 .1 O v DSS MegaMOS FET IXTH / IXTM 11N80 800 V IXTH / IXTM 13N80 800 V p ^D25 DS on 11 A 0.95 fì 13 A 0.80 Q N-Channel Enhancement Mode Symbol Test Conditions V * DSS ^ V DGR VGS v GSM ' d 25 •d m PD Maximum Ratings = 25°C to 150°C


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    11N80 13N80 11N80 13N80 O-204 O-247 IXTM13N80 PDF