EM48BM1684LBA
Abstract: cke02 EM48BM1684LBA-75F 54bA
Text: eorex EM48BM1684LBA Revision History Revision 0.1 May. 2007 - First release. Revision 0.2 (May. 2008). - change package out-line spec : from 12.5mm x 10.0mm to 12.0mm x 10.0mm Revision 0.3 (Aug. 2008). - change ICC spec : ICC2N : 12 MA ICC2Ns. : 5 MA ICC3P :
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EM48BM1684LBA
512Mb
133MHz
166MHz
EM48BM1684LBA
cke02
EM48BM1684LBA-75F
54bA
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Untitled
Abstract: No abstract text available
Text: KM44S16030C Preliminary CMOS SDRAM Revision History Revision 1 May 1998 - ICC2N value (10mA) is changed to 12mA. Revision .2 (June 1998) - tSH (-10 binning) is revised. REV. 2 June '98 Preliminary CMOS SDRAM KM44S16030C 4M x 4Bit x 4 Banks Synchronous DRAM
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KM44S16030C
10/AP
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Untitled
Abstract: No abstract text available
Text: eorex EM488M3244VBC Revision History Revision 0.1 May. 2007 - First release(Preliminary) Revision 0.2 (Apr. 2008). Update ICC spec: . Revision 0.3 (Jun. 2008). Update 1. ICC spec: (PAGE 7) - ICC1 110 mA. . - ICC2P 2 mA. - ICC2PS 2 mA. - ICC2N 40 mA.
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EM488M3244VBC
256Mb
EM488M3244VBC
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EM488M3244VBC-75FE
Abstract: EM488M3244VBC EM488M3244VBC-75F
Text: eorex EM488M3244VBC Revision History Revision 0.1 May. 2007 - First release(Preliminary) Revision 0.2 (Apr. 2008). Update ICC spec: . Revision 0.3 (Jun. 2008). Update 1. ICC spec: (PAGE 7) - ICC1 110 mA. . - ICC2P 2 mA. - ICC2PS 2 mA. - ICC2N 40 mA.
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EM488M3244VBC
256Mb
EM488M3244VBC-75FE
EM488M3244VBC
EM488M3244VBC-75F
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EM484M1644VTA
Abstract: No abstract text available
Text: eorex EM484M1644VTA Revision History Revision 0.1 Jun. 2009 -First release Revision 0.2 (July 2013) -Update DC/AC parameter -DC parameters update points. 1. ICC2P 1.5ma to 10ma. 2. ICC2PS 1ma to 5ma. 3. ICC2N 20ma to 30ma. 4. ICC2NS 10ma to 25ma. 5. ICC3P 7ma to 30ma.
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EM484M1644VTA
110ma
115ma.
EM484M1644VTA
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KM48S8030C
Abstract: No abstract text available
Text: KM48S8030C Preliminary CMOS SDRAM Revision History Revision 1 May 1998 - ICC2N value (10mA) is changed to 12mA. Revision .2 (June 1998) - tSH (-10 binning) is revised. REV. 2 June '98 Preliminary CMOS SDRAM KM48S8030C 2M x 8Bit x 4 Banks Synchronous DRAM
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KM48S8030C
KM48S8030C
10/AP
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Untitled
Abstract: No abstract text available
Text: 144PIN PC133 Unbuffered SO-DIMM 256MB With 16MX16 CL3 TS32MSS64V6G Pin Identification Description The TS32MSS64V6G Dynamic RAM TS32MSS64V6G is a high-density consists 32Mx64 memory of 8 Synchronous module. pieces of The Symbol CMOS Function A0~A12 Address inputs
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144PIN
PC133
256MB
16MX16
TS32MSS64V6G
32Mx64
TS32MSS64V6G
JEP-108E
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IS42VS16100E
Abstract: 42VS16100E IS42VS16100E-75BLI
Text: IS42VS16100E 512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM FEATURES • Clock frequency: 133, 100, 83 MHz • Fully synchronous; all signals referenced to a positive clock edge • Two banks can be operated simultaneously and independently • Dual internal bank controlled by A11
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IS42VS16100E
4000-mil
60-ball
400-mil
IS42VS16100E
42VS16100E
IS42VS16100E-75BLI
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Untitled
Abstract: No abstract text available
Text: AVED MEMORY PRODUCTS Where Quality & Memory Merge AMP377P3323AT2-C1H/H 32M X 72 SDRAM DIMM with PLL & Register based on 16M X 8, 4 Banks, 4K REFRESH, 3.3V Synchronous DRAMs WITH SPD DESCRIPTION AVED Memory Products AMP377P3323AT2-C1H/H is a 32M bit X 72 Synchronous Dynamic RAM high density memory
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AMP377P3323AT2-C1H/H
AMP377P3323AT2-C1H/H
400mil
18-bits
168-pin
0022uF
100MHz
100MHz
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74605
Abstract: No abstract text available
Text: AVED MEMORY PRODUCTS Where Quality & Memory Merge AVED16P664LS49-C75 16M X 64 SDRAM DIMM based on 16M X 8, 4 Banks, 4K REFRESH, 3.3V Synchronous DRAMs WITH SPD DESCRIPTION AVED Memory Products AVED16P664LS49-C75 is a 16M bit X 64 Synchronous Dynamic RAM high density memory module. The AVED Memory Products AVED16P664LS49-C75
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AVED16P664LS49-C75
AVED16P664LS49-C75
400mil
144-pin
144-pin
74605
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Untitled
Abstract: No abstract text available
Text: AVED MEMORY PRODUCTS Where Quality & Memory Merge AMP366P1723AT2-C1H 16M X 64 SDRAM DIMM based on 16M X 8, 4 Banks, 4K REFRESH, 3.3V Synchronous DRAMs WITH SPD DESCRIPTION AVED Memory Products AMP366P1723AT2-C1H is a 16M bit X 64 Synchronous Dynamic RAM high density memory module. The AVED Memory Products AMP366P1723AT2-C1H
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AMP366P1723AT2-C1H
AMP366P1723AT2-C1H
400mil
168-pin
100MHz
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Untitled
Abstract: No abstract text available
Text: AVED MEMORY PRODUCTS Where Quality & Memory Merge AMP366P1623BTE-C75/H 16M X 64 SDRAM DIMM, Unbuffered, based on 8M X 8, 4 Banks, 4K Refresh, 3.3V Synchronous DRAMs WITH SPD DESCRIPTION AVED Memory Products AMP366P1623BTE-C75/H is a 16M bit X 64 Synchronous Dynamic RAM high density memory
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AMP366P1623BTE-C75/H
AMP366P1623BTE-C75/H
400mil
168-pin
168-pin6
100MHz
PC100
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Untitled
Abstract: No abstract text available
Text: AVED MEMORY PRODUCTS Where Quality & Memory Merge AMP374P1723AT2-C1L 16M X 72 SDRAM DIMM with ECC based on 16M X 8, 4 Banks, 4K REFRESH, 3.3V Synchronous DRAMs WITH SPD DESCRIPTION AVED Memory Products AMP374P1723AT2-C1L is a 16M bit X 72 Synchronous Dynamic
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AMP374P1723AT2-C1L
AMP374P1723AT2-C1L
400mil
168-pin
168-MHz
100MHz
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AVED8P664LS48-C75
Abstract: No abstract text available
Text: AVED MEMORY PRODUCTS Where Quality & Memory Merge AVED8P664LS48-C75 8M X 64 SDRAM SODIMM based on 4M X 16, 4 Banks, 4K Refresh, 3.3V Synchronous DRAMS with SPD DESCRIPTION AVED Memory Products AVED8P664LS48-C75 is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The
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AVED8P664LS48-C75
AVED8P664LS48-C75
400mil
144-pin
non-256M
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Untitled
Abstract: No abstract text available
Text: AVED MEMORY PRODUCTS Where Quality & Memory Merge AMP374P3323CT2-C75 32M X 72 SDRAM DIMM with ECC based on 16M X 8, 4 Banks, 4K REFRESH, 3.3V Synchronous DRAMs WITH SPD DESCRIPTION AVED Memory Products AMP374P3323CT2-C75 is a 32M bit X 72 Synchronous Dynamic
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AMP374P3323CT2-C75
AMP374P3323CT2-C75
400mil
168-pin
100MHz
PC100
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Untitled
Abstract: No abstract text available
Text: iPEM 2.4 Gb SDRAM-DDR2 AS4DDR232M72PBG 32Mx72 DDR2 SDRAM iNTEGRATED Plastic Encapsulated Microcircuit FEATURES BENEFITS DDR2 Data rate = 667, 533, 400 Available in Industrial, Enhanced and Military Temp Package: • 255 Plastic Ball Grid Array PBGA , 25 x 32mm
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AS4DDR232M72PBG
32Mx72
AS4DDR232M72PBG
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dynamic ram binary cell
Abstract: QBA-1 qab1
Text: VIS Preliminary VG36643241AT CMOS Synchronous Dynamic RAM Description The device is CMOS Synchronous Dynamic RAM organized as 524,288 words x 32 bits x 4 banks. it is fabricated with an advanced submicron CMOS technology and designed to operate from a singly 3.3V only
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VG36643241AT
86-pin
1G5-0172
dynamic ram binary cell
QBA-1
qab1
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K4S643233H
Abstract: K4S643233H-F
Text: K4S643233H - F H E/N/G/C/L/F Mobile-SDRAM 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES GENERAL DESCRIPTION • 3.0V & 3.3V power supply. The K4S643233H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits,
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K4S643233H
32Bit
90FBGA
K4S643233H-F
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F5401
Abstract: io 1207 100MHZ 54-PIN F5402
Text: PRELIMINARY SPACE ELECTRONICS INC. 1 GIGABIT SYNCHRONOUS DRAM SPACE PRODUCTS VDD 1 97SD10004RP 54 VSS CS 7 NC VDDQ VSSQ CS 6 NC DQ0 DQ3 VSSQ VDDQ CS 5 NC CS 4 NC VDDQ VSSQ CS 3 NC DQ1 DQ2 VSSQ VDDQ CS 2 VDD VSS CS 1 NC/RFU WE DQM NC/A13 CAS CLK RAS CKE CS 0
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97SD10004RP
NC/A13
NC/A12
A10/AP
99Rev0
F5401
io 1207
100MHZ
54-PIN
F5402
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54-TSOP
Abstract: K4S511632B M366S2953BTS-C7A M366S3354BTS-C7A M366S6553BTS-C7A M374S2953BTS-C7A M374S6553BTS-C7A
Text: 256MB, 512MB, 1GB Unbuffered DIMM SDRAM SDRAM Unbuffered Module 168pin Unbuffered Module based on 512Mb B-die 62/72-bit Non ECC/ECC Revision 1.1 February 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.1 February 2004
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256MB,
512MB,
168pin
512Mb
62/72-bit
54-TSOP
K4S511632B
M366S2953BTS-C7A
M366S3354BTS-C7A
M366S6553BTS-C7A
M374S2953BTS-C7A
M374S6553BTS-C7A
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K4S28323LF
Abstract: K4S28323LF-F
Text: K4S28323LF - F H E/N/S/C/L/R Mobile-SDRAM 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES GENERAL DESCRIPTION • 2.5V power supply. The K4S28323LF is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 32 bits,
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K4S28323LF
32Bit
90FBGA
K4S28323LF-F
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M366S6453DTS
Abstract: No abstract text available
Text: M366S6453DTS PC133/PC100 Unbuffered DIMM M366S6453DTS SDRAM DIMM 64Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M366S6453DTS is a 64M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung
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M366S6453DTS
PC133/PC100
M366S6453DTS
64Mx64
32Mx8,
400mil
168-pin
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M366S0924ETS-C7A
Abstract: M366S1723ETS-C7A M366S1723ETU-C7A M366S3323ETS-C7A M366S3323ETU-C7A M374S1723ETS-C7A M374S1723ETU-C7A
Text: 64MB, 128MB, 256MB Unbuffered DIMM SDRAM SDRAM Unbuffered Module 168pin Unbuffered Module based on 128Mb E-die 62/72-bit Non ECC/ECC Revision 1.3 February. 2004 Rev. 1.3 February 2004 64MB, 128MB, 256MB Unbuffered DIMM SDRAM Revision History Revision 1.0 November., 2002
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128MB,
256MB
168pin
128Mb
62/72-bit
M366S0924ETS-C7A
M366S1723ETS-C7A
M366S1723ETU-C7A
M366S3323ETS-C7A
M366S3323ETU-C7A
M374S1723ETS-C7A
M374S1723ETU-C7A
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TM4SN64EPN10
Abstract: TM2SN64EPN-10 TM48N64EPN TM4SN64EPN-10 TMS626812
Text: TM2SN64EPN 2097152 BY 64-BIT TM4SN64EPN 4194304 BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULES _ SYNCHRONOUS CLOCK CYCLE TIME *CK3 , {CL = 3 t ACCESS TIME CLOCK TO OUTPUT >CK2 CL = 2) *CK3 (CL = 3) *CK2 (CL = 2) • • • • • • • •
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TM2SN64EPN
64-BIT
TM4SN64EPN
SMMS696
TM2SN64EPN.
TM4SN64EPN
66-MHz
168-Pin
TM4SN64EPN10
TM2SN64EPN-10
TM48N64EPN
TM4SN64EPN-10
TMS626812
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