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    IC11 Search Results

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    TLV320AIC1106PW Texas Instruments PCM Codec With Microphone Amps & Speaker Driver 20-TSSOP -40 to 85 Visit Texas Instruments Buy
    TLV320AIC11CPFB Texas Instruments Low-Power Mono Voice Band CODEC 48-TQFP 0 to 70 Visit Texas Instruments Buy
    TLV320AIC1106PWG4 Texas Instruments PCM Codec With Microphone Amps & Speaker Driver 20-TSSOP -40 to 85 Visit Texas Instruments Buy
    TLV320AIC1103PBS Texas Instruments Programmable PCM Codec With Microphone Amps & Speaker Driver 32-TQFP -40 to 85 Visit Texas Instruments Buy
    TLV320AIC1110PBS Texas Instruments Programmable PCM Codec With Microphone Amps & Speaker Driver 32-TQFP -40 to 85 Visit Texas Instruments Buy
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    IC11 Price and Stock

    Hirose Electric Co Ltd IC11S-BD-EJR

    CONN PCMCIA CARD SNAP-IN
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    DigiKey IC11S-BD-EJR Bulk 1,080 1
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    Mouser Electronics IC11S-BD-EJR 80
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    Same Sky RIC11-31S15.5D7-TH

    INCR ENC, MECH, 15 PPR 30 DET, 5
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    DigiKey RIC11-31S15.5D7-TH Box 987 1
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    Raltron Electronics Corporation RMIC-110-5-6027-NS1

    Unidirectional Microphone
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    DigiKey RMIC-110-5-6027-NS1 Tray 966 1
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    Same Sky RIC11-31S17D7-USMT

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    Raltron Electronics Corporation RMIC-110-5-4015-NS3

    Unidirectional Microphone
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    DigiKey RMIC-110-5-4015-NS3 Tray 909 1
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    IC11 Datasheets (119)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IC1110-F128LQ Integrated Circuit Solution USB Flash Card Reader Controller Original PDF
    IC113-0284-007 Yamaichi Electronics PLCC (TH) Original PDF
    IC113-0444-004 Yamaichi Electronics PLCC (TH) Original PDF
    IC113-0524-008 Yamaichi Electronics PLCC (TH) Original PDF
    IC113-0684-005 Yamaichi Electronics PLCC (TH) Original PDF
    IC113-0684-010 Yamaichi Electronics PLCC (TH) Original PDF
    IC113-0844-006 Yamaichi Electronics PLCC (TH) Original PDF
    IC11-68PL-1.27SF-EJR Hirose Electric Memory Connectors - PC Cards, Connectors, Interconnects, CONN PC CARDBUS 68 POS EJECT Original PDF
    IC11-BD-EJR Hirose Electric Memory Connectors - PC Cards, Connectors, Interconnects, EJECTOR PC CARDBUS CONN RIGHT Original PDF
    IC11S-68PL-1.27SF-EJL Hirose Electric Single Slot SMT Connectors For Card-Bus Based PC Cards Original PDF
    IC11S-68PL-1.27SF-EJL Hirose Electric Memory Connectors - PC Cards, Connectors, Interconnects, CONN PCMCIA 68POS 1.27MM LFT SMD Original PDF
    IC11S-68PL-1.27SF-EJR Hirose Electric Single Slot SMT Connectors For Card-Bus Based PC Cards Original PDF
    IC11S-68PL-1.27SF-EJR Hirose Electric Memory Connectors - PC Cards, Connectors, Interconnects, CONN PCMCIA 68POS 1.27MM RT SMD Original PDF
    IC11S-68PLR-1.27SF-EJL Hirose Electric Single Slot SMT Connectors For Card-Bus Based PC Cards Original PDF
    IC11S-68PLR-1.27SF-EJL Hirose Electric Memory Connectors - PC Cards, Connectors, Interconnects, CONN PCMCIA 68POS 1.27MM LFT SMD Original PDF
    IC11S-68PLR-1.27SF-EJR Hirose Electric Single Slot SMT Connectors For Card-Bus Based PC Cards Original PDF
    IC11S-68PLR-1.27SF-EJR Hirose Electric Memory Connectors - PC Cards, Connectors, Interconnects, CONN PCMCIA 68POS 1.27MM RT SMD Original PDF
    IC11SA-68PL-1.27SF-EJL Hirose Electric Single Slot SMT Connectors For Card-Bus Based PC Cards Original PDF
    IC11SA-68PL-1.27SF-EJL Hirose Electric Memory Connectors - PC Cards, Connectors, Interconnects, CONN PCMCIA 68POS 1.27MM LFT SMD Original PDF
    IC11SA-68PL-1.27SF-EJR Hirose Electric Single Slot SMT Connectors For Card-Bus Based PC Cards Original PDF

    IC11 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IXGH32N60C

    Abstract: 32N60C IXGH32N60
    Text: HiPerFASTTM IGBT LightspeedTM Series IXGH 32N60C IXGT 32N60C Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 60 A IC110 TC = 110°C


    Original     		32N60C IC110 O-268 O-247 IXGH32N60C 32N60C IXGH32N60 PDF

    IXGH30N60B

    Abstract: IXGT30N60B
    Text: HiPerFASTTM IGBT IXGH30N60B IXGT30N60B Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 60 A IC110 TC = 110°C 30 A ICM TC = 25°C, 1 ms


    Original     		IXGH30N60B IXGT30N60B IC110 O-247 O-268 IXGH30N60B IXGT30N60B PDF

    SD card connector

    Abstract: MCR102 connectors edge connector 22 pin SIM SOCKET CIRCULAR connector Memory Stick sd memory card socket DFS111-UL1979 MI20
    Text: Memory Card 65 Memory Card Card Bus Connectors Type Series Name Page IC11S 67 Single slot FPC connection connectors for PC Card bus IC13 67 Card bus socket connectors IC9 68 Series Name Page Single slot through hole type connectors for PC card standard IC7


    Original     		IC11S MRF01 UL94V-0, SD card connector MCR102 connectors edge connector 22 pin SIM SOCKET CIRCULAR connector Memory Stick sd memory card socket DFS111-UL1979 MI20 PDF

    IXXH100N60B3

    Abstract: 100n60
    Text: Advance Technical Information XPTTM 600V GenX3TM IXXH100N60B3 VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 10-30 kHz Switching = = ≤ = 600V 100A 1.80V 150ns TO-247 AD Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ


    Original     		IXXH100N60B3 IC110 150ns O-247 100N60B3 0-10-A IXXH100N60B3 100n60 PDF

    Untitled

    Abstract: No abstract text available
    Text: Circular Connectors Single slot SMT connectors for PC Card bus IC11S Series Features Rectangular Connectors ● Single slot SMT connectors for PC CardBus conforming to PC Card Standards. ● The smaller dimensions width and depth reduce the occupied area on


    Original     		IC11S UL94V-0, PDF

    NE558

    Abstract: NE558 applications NE558 pin configuration NE558D NE558N
    Text: INTEGRATED CIRCUITS NE558 Quad timer Product data Supersedes data of 1994 Aug 31 File under Integrated Circuits, IC11 Data Handbook Philips Semiconductors 2001 Aug 03 Philips Semiconductors Product data Quad timer NE558 DESCRIPTION PIN CONFIGURATION The NE558 Quad Timers are monolithic timing devices which can be


    Original     		NE558 NE558 NE558 applications NE558 pin configuration NE558D NE558N PDF

    MEPCO

    Abstract: philips components trimpot NE5539 NE5539D NE5539N SE5539 SE5539N SL00572 SL00579 cermet trimpot
    Text: INTEGRATED CIRCUITS NE/SE5539 High frequency operational amplifier Product data Supersedes data of 1992 Apr 15 File under Integrated Circuits, IC11 Data Handbook Philips Semiconductors 2001 Aug 03 Philips Semiconductors Product data High frequency operational amplifier


    Original     		NE/SE5539 NE/SE5539 MEPCO philips components trimpot NE5539 NE5539D NE5539N SE5539 SE5539N SL00572 SL00579 cermet trimpot PDF

    IXGH72N60C3

    Abstract: No abstract text available
    Text: GenX3TM 600V IGBT IXGH72N60C3 VCES IC110 VCE sat tfi (typ) High-Speed PT IGBT for 40-100kHz Switching Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ 600 600 V V VGES Continuous ±20 V VGEM Transient


    Original     		IXGH72N60C3 IC110 40-100kHz 72N60C3 11-25-09-C IXGH72N60C3 PDF

    IXBL64N250

    Abstract: No abstract text available
    Text: Advance Technical Information High Voltage, High Gain BiMOSFETTM IXBL64N250 VCES IC110 = 2500V = 46A ≤ 3.0V VCE sat Monolithic Bipolar MOS Transistor (Electrically Isolated Tab) ISOPLUS i5-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C


    Original     		IXBL64N250 IC110 64N250 5-10-A IXBL64N250 PDF

    IXGK55N120A3H1

    Abstract: IXGX55N120A3H1 IXGX55N120 PLUS247 IC110
    Text: Advance Technical Information IXGK55N120A3H1 IXGX55N120A3H1 GenX3TM 1200V IGBTs w/ Diode VCES = 1200V IC110 = 55A VCE sat ≤ 2.3V Ultra-Low-Vsat PT IGBTs for up to 3kHz Switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C


    Original     		IXGK55N120A3H1 IXGX55N120A3H1 IC110 O-264 338B2 IXGK55N120A3H1 IXGX55N120A3H1 IXGX55N120 PLUS247 IC110 PDF

    8-8NS

    Abstract: No abstract text available
    Text: Advance Technical Information IXGH30N60B4 High-Gain IGBT VCES IC110 VCE sat tfi(typ) Medium-Speed PT Trench IGBT = = ≤ = 600V 30A 1.7V 88ns TO-247 AD Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Maximum Ratings


    Original     		IXGH30N60B4 IC110 O-247 338B2 8-8NS PDF

    IXGR50N160H1

    Abstract: No abstract text available
    Text: Advance Technical Information High Voltage IGBT with Diode IXGR50N160H1 VCES = 1600V IC110 = 36A VCE sat ≤ 2.30V ( Electrically Isolated Tab) ISOPLUS247TM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		IXGR50N160H1 IC110 ISOPLUS247TM 338B2 IXGR50N160H1 PDF

    IXGN200N60B3

    Abstract: 9V DC INPUT and gate ic 200N60B3 IGBT 100V 100A igbt 100a 150v SOT227B 123B16
    Text: IXGN200N60B3 GenX3TM 600V IGBT VCES = 600V IC110 = 200A VCE sat ≤ 1.50V Medium-Speed Low-Vsat PT IGBT for 5-40kHz Switching SOT-227B, miniBLOC E153432 Ec Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		IXGN200N60B3 IC110 5-40kHz OT-227B, E153432 200N60B3 8-08-A IXGN200N60B3 9V DC INPUT and gate ic IGBT 100V 100A igbt 100a 150v SOT227B 123B16 PDF

    IXBX64N250

    Abstract: IC100 IXBK64N250 PLUS247
    Text: High Voltage, High Gain BiMOSFETTM IXBK64N250 IXBX64N250 VCES IC110 = 2500V = 64A ≤ 3.0V VCE sat Monolithic Bipolar MOS Transistor TO-264 (IXBK) G Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 2500 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		IXBK64N250 IXBX64N250 IC110 O-264 IC100 64N250 5-10-A IXBX64N250 IC100 IXBK64N250 PLUS247 PDF

    IXYH82N120C3

    Abstract: DS100335
    Text: Advance Technical Information IXYH82N120C3 1200V XPTTM IGBT GenX3TM VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 82A 3.2V 93ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		IXYH82N120C3 IC110 O-247 062in. 82N120C3 IXYH82N120C3 DS100335 PDF

    8n90c

    Abstract: 8n90 IXYP8N90C3 IGBTS
    Text: Advance Technical Information IXYY8N90C3 IXYP8N90C3 900V XPTTM IGBTs GenX3TM VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 900V 8A 2.5V 130ns TO-252 (IXYY) G Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C


    Original     		IXYY8N90C3 IXYP8N90C3 IC110 130ns O-252 062in. O-220) O-252 O-220 8n90c 8n90 IXYP8N90C3 IGBTS PDF

    IXYH50N120C3

    Abstract: No abstract text available
    Text: Advance Technical Information IXYH50N120C3 1200V XPTTM IGBT GenX3TM VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 50A 3.0V 57ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		IXYH50N120C3 IC110 O-247 062in. 50N120C3 IXYH50N120C3 PDF

    IXGJ50N60C4D1

    Abstract: G50N60
    Text: Preliminary Technical Information High-Gain IGBT w/ Diode IXGJ50N60C4D1 VCES = 600V IC110 = 21A VCE sat ≤ 2.50V (Electrically Isolated Tab) High-Speed PT Trench IGBT ISO TO-247TM E153432 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C


    Original     		IXGJ50N60C4D1 IC110 O-247TM E153432 IC110 IF110 50N60C4 0-06-11-A IXGJ50N60C4D1 G50N60 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information GenX3TM 600V IGBT IXGH60N60C3 VCES IC110 VCE sat tfi (typ) High Speed PT IGBTs for 40-100kHz switching = = ≤ = 600V 60A 2.5V 55ns TO-247 AD (IXGH) Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		40-100kHz IXGH60N60C3 IC110 O-247 60N60C3 02-12-08-B PDF

    40N90C3D1

    Abstract: No abstract text available
    Text: Advance Technical Information IXYH40N90C3 900V XPTTM IGBT GenX3TM VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 900V 40A 2.5V 110ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ


    Original     		IXYH40N90C3 IC110 110ns O-247 062in. 40N90C3D1 PDF

    ic1110-f128lq

    Abstract: multi format card reader 80SM 80T32
    Text: IC1110-F128LQ USB Flash Card Reader Controller 1. − FEATURES − High speed 8-bit micro-controller with 4 system clocks Master/Slave IIC and UART/RS-232 interface for external device communication. per machine cycle − − Instruction-set compatible with MCS-51


    Original     		IC1110-F128LQ UART/RS-232 MCS-51 32K-byte ic1110-f128lq multi format card reader 80SM 80T32 PDF

    htrc110 PROTOCOL

    Abstract: HT1ICS3002x HITAG command HITAG 2 PROTOCOL transponders philips htrc110 HTRC11001T HTRC110 manual hitag application note AN98080 HTRC11001T/03EE,118
    Text: INTEGRATED CIRCUITS DATA SHEET HTRC11001T HITAG reader chip Product specification Supersedes data of 1999 Jan 01 File under Integrated Circuits, IC11 2001 Nov 23 Philips Semiconductors Product specification HITAG reader chip HTRC11001T CONTENTS 13 PACKAGE OUTLINE


    Original     		HTRC11001T SCA73 613502/02/pp20 htrc110 PROTOCOL HT1ICS3002x HITAG command HITAG 2 PROTOCOL transponders philips htrc110 HTRC11001T HTRC110 manual hitag application note AN98080 HTRC11001T/03EE,118 PDF

    EN 50065-1

    Abstract: No abstract text available
    Text: INTEGRATED CIRCUfTS EM M SInlEET TDA5051 Home automation modem P relim inary specification File under Integrated Circuits, IC11 Philips Semiconductors 1997 M ar 11 PHILIPS Philips S e m i c o n d u c t o r s Preliminary specification H o m e aut omat i on mo d e m


    OCR Scan     		TDA5051 547047/1200/01/PP28 EN 50065-1 PDF

    30N60B3D

    Abstract: No abstract text available
    Text: IXXH30N60B3D1 XPTTM 600V IGBT GenX3TM w/ Diode VCES = IC110 = VCE sat  tfi(typ) = Extreme Light Punch Through IGBT for 5-30 kHz Switching 600V 30A 1.85V 125ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M


    Original     		IXXH30N60B3D1 IC110 125ns O-247 IF110 30N60B3D1 30N60B3D PDF