IC 7000 AND GATE Search Results

"Infrared TRANSCEIVER" DATASHEET

Abstract: HSDL-7000 EN60825-1 Infrared-transceiver
Contextual Info: HSDL-7000 IR 3/16 Encode/Decode IC Data Sheet Description Features The HSDL-7000 performs the modulation/ demodulation function used to both encode and decode the electrical pulses from the IR transceiver. These pulses are then sent to a standard UART which

"Infrared TRANSCEIVER" DATASHEET

Abstract: HSDL-7000 EN60825-1 Infrared Transceiver
Contextual Info: HSDL-7000 IR 3/16 Encode/Decode IC Data Sheet Description Features The HSDL-7000 performs the modulation/ demodulation function used to both encode and decode the electrical pulses from the IR transceiver. These pulses are then sent to a standard UART which

RS-232C application -75188, 75189

Abstract: 75188 HIM-7000 75189 HIM7000 IN4619 75188 application
Contextual Info: 1/2 001-01 / 20010914 / ed638_him7000.fm LAN Components HIM Series HIM-7000 Interface DIP FEATURES • This transceiver module contains all necessary components, such as the DC to DC converter, driver IC (equivalent to type 75188), receiver IC (equivalent to type 75189), and capacitors.

HIM-7000

Abstract: 75188 RS-232C application -75188, 75189 HIM7000 75189 75189 data sheet D638
Contextual Info: LAN Components HIM Series HIM-7000 Interface DIP FEATURES • This transceiver module contains all necessary components, such as the DC to DC converter, driver IC equivalent to type 75188 , receiver IC (equivalent to type 75189), and capacitors. They can thus be implemented without additional external parts.

Contextual Info: FEA TU R ES • 256 x 1 photosite array ■ ■ ■ ■ ■ ■ ■ 13pm * 17pm photosiles on 13pm pitch Dynam ic range typical: 7000:1 O n-chip video and com pensation amplifiers Low pow er requirements All operating voltages 15V and under Low noise equivalent exposure

IC 7000 AND gate

Contextual Info: AN U = n*A\ u u □ □ □ □ u □ □ Altera Corporation H ig h -d en sity , h ig h -s p e e d C M O S E P L D s with s ec o n d -g e n era tio n Multiple Array MatriX M A X architecture C o m p lete E P L D family with logic density up to 20,000 typical gates

L144CJ

Abstract: Dual Comparators fet input siliconix FET DESIGN FET Input Amplifiers u402 CR043 FET-Input Operational Amplifiers AN743 U401 U401-04
Contextual Info: b e n e fits • Minimum System Error and Calibra- • • • 5 mV Offset Maximum U401 • * Low Drift with Temperature 1 0 m v/°c Maximum (u 4 o i, 02) Operates from Low Power Supply Characteristic 1 Rv QSS 2 GSS Gate-Source Breakdown Voltage Gate-Source Cutoff

SG 2368

Abstract: sg 2534 DELTA 0431 180/TTK SG 2368
Contextual Info: PRELIMINARY DATA SHEET C TO X BAND AMPLIFIER C TO X BAND OSC N-CHANNEL GaAs MESFET FEATURES NE72118 PACKAGE DIMENSIONS Units in mm • HIGH POWER GAIN: Gs = 5.5 dB TYP at f = 12 GHz • GATE LENGTH: Lg = 0.8 • GATE WIDTH: Wg = 330 jim • 4 PINS SUPER MINI MOLD

energy 3000 ups

Abstract: APT25GN120B MIC4452 T0-247
Contextual Info: APT25GN120B APT25GN120B TYPICAL PERFORMANCE CURVES 1200V Utilizing the latest Field Stop technology, these IGBT’s have a very short, low amplitude tail current and low Eoff. The Trench Gate design results in superior VCE on performance. Easy paralleling results from very tight

Contextual Info: APT25GN120B G 1200V TYPICAL PERFORMANCE CURVES APT25GN120B APT25GN120BG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBT’s have a very short, low amplitude tail current and low Eoff. The Trench Gate design

Contextual Info: APT25GN120B G 1200V TYPICAL PERFORMANCE CURVES APT25GN120B APT25GN120BG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBT’s have a very short, low amplitude tail current and low Eoff. The Trench Gate design

APT25GN120B

Abstract: APT25GN120BG APT25GN120S APT25GN120SG MIC4452
Contextual Info: TYPICAL PERFORMANCE CURVES 1200V APT25GN120B_S G APT25GN120B APT25GN120S APT25GN120BG* APT25GN120SG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum

Contextual Info: TYPICAL PERFORMANCE CURVES 1200V APT25GN120B_S G APT25GN120B APT25GN120S APT25GN120BG* APT25GN120SG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum

APT25GN120SG

Abstract: energy 3000 ups APT25GN120B APT25GN120BG APT25GN120S MIC4452 APT30DQ120
Contextual Info: TYPICAL PERFORMANCE CURVES 1200V APT25GN120B_S G APT25GN120B APT25GN120S APT25GN120BG* APT25GN120SG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum

S852T

Abstract: BF579 T0-50 BF964S BF96 BFP183T
Contextual Info: Tem ic Semiconduct ors Selector Guide Dual-Gate Si-MOSFETs N-Channel Depletion Mode Number BF961 BF964S BF966S BF988 BF994S BF995 BF996S BF998 S525T S888T VD5 V 20 20 20 12 20 20 20 12 20 10 lümax mA 30 30 30 30 30 30 30 30 30 20 Iy2isl at Ids mA mS 15

nec 2501 904

Abstract: AN 17821 audio nec 303 j fet nec 7912
Contextual Info: DATA SHEET GaAs MES FET NE721S01 C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEATURES • High Power Gain: Gs = 7dBTYP. @ f = 1 2 G H z • Gate Length: Lg = 0.8 /xm recessed gate • Gate Width: Wg = 330 • fim Plastic package ORDERING INFORMATION

NEC D 809 F

Abstract: NEC D 809 L transistor NEC D 986 E7138
Contextual Info: DATA SHEET GaAs MES FET NE713 L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • Low noise figure NF = 0.6 dB TYP. a tf = 4G H z • High associated gain Ga = 14 dB TYP. a tf = 4 GHz • Gate width: Wg = 280 ^¡m • Gate Length: Lg = 0.3 ßm

Contextual Info: APT25GN120B2DQ2 G 1200V TYPICAL PERFORMANCE CURVES APT25GN120B2DQ2 APT25GN120B2DQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBT s have a very short, low amplitude tail current and low Eoff. The Trench Gate design

APT25GN120B2DQ2

Contextual Info: APT25GN120B2DQ2 G 1200V TYPICAL PERFORMANCE CURVES APT25GN120B2DQ2 APT25GN120B2DQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBT’s have a very short, low amplitude tail current and low Eoff. The Trench Gate design

Contextual Info: APT25GN120B2DQ2 G 1200V TYPICAL PERFORMANCE CURVES APT25GN120B2DQ2 APT25GN120B2DQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBT’s have a very short, low amplitude tail current and low Eoff. The Trench Gate design

APT25GN120B2DQ2

Abstract: APT25GN120B2DQ2G MIC4452
Contextual Info: APT25GN120B2DQ2 G 1200V TYPICAL PERFORMANCE CURVES APT25GN120B2DQ2 APT25GN120B2DQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBT’s have a very short, low amplitude tail current and low Eoff. The Trench Gate design

7256S

Abstract: 7032S epm7120
Contextual Info: ¿sonissy M A X 7000 M X7080EÌ MAX7000S Programmable Logic Device Family June 1996, ver. 4 Data Sheet Fe a tu re s. • ■ ■ ■ ■ ■ ■ ■ ■ H ig h -p erfo rm an ce, E E P R O M -based p ro g ram m ab le logic d ev ices (P LD s based on seco n d -g en eratio n M u ltip le A rray M a trix (M A X )

T1800GB45A

Contextual Info: WESTCODE An Date:- 1 Sep, 2011 Data Sheet Issue:- A1 IXYS Company Advance Data Insulated Gate Bi-Polar Transistor Type T1800GB45A Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate.

IRF 3250

Abstract: swiching transistor td 1410 transistor IRF 630 ir igbt 1200V 10A P channel 600v 20a IGBT 1000V 20A transistor irf 100v 200A C-150 IRG4PH40UD2
Contextual Info: PD - 94739A IRG4PH40UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than