IBM 1M X 8 Search Results
IBM 1M X 8 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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0118160B
Abstract: 0116165B 014400B 0117805 014400
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IBM0116160M 0116160P. 0116165B. 0116165M 0118160B 0116165B 014400B 0117805 014400 | |
Con 39DContextual Info: IBM 0 1 1 6 1 8 0 M IBM 0 1 1 6 1 8 0 P Advance 1M x 18 Low Power DRAM Features • 1,048,576 word by 18 bit organization • Single 3.3V ± 0.3V or 5.0V ± 0.5V power supply • 4096 refresh cycles/256ms • High Performance: -50 • Low Power Dissipation |
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cycles/256ms 200nA IBM0116180M IBM0116180P IBM011G180P SO/44 Con 39D | |
014400BContextual Info: IBM 014400B IBM 014400 IBM 014400C IB M 014400A 1M x 4 D R A M Features • 1 ,0 4 8 ,5 7 6 word by 4 bit organization • P ow er Supply: 3 .3 V ± 0 .3 V or 5 .0 V ± 0 .5 V • 1 0 2 4 refresh c y d e s /1 6 m s • High P erform ance: • - Active m ax |
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014400B 014400C 14400A 110ns 130ns 4DSU-00 350mil; 06H0059 MMDD34DSU-00 300mil; | |
Contextual Info: IBM 11D1475B IBM 11E1475B IBM11D2475B IBM11E2475B 1M/2M x 32 Desktop ECC-on-SIMM Features • 72-Pin JED EC Standard Single-ln-Line Memory Module • High Performance C M O S process • Single 5V, ± 0.25V Power Supply • Performance: • All inputs & outputs are fully TTL & C M O S |
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11D1475B 11E1475B IBM11D2475B IBM11E2475B 72-Pin IBM11D1475B QG03fl2Q | |
Contextual Info: IWKIC MX83C1 BEE IBM-Bit Mask ROM MB/3BBit Output FEATURES ORDER INFORMATION • Bit organization 1M x 16 word mode) 512K x 32 (double word mode) Part No. • Fast access time Random access: 100ns (max.) MX23C1622MC-10 • Page • Current 8 double words per page |
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MX83C1 100ns MX23C1622MC-10 100mA 50jiA A0-A18 D0-D30 D31/A-1 23C1622-10 | |
a8303Contextual Info: IBM 0 1 1 6 1 6 0 M IBM 0 1 1 6 1 6 0 P 1M x 16 Low Power DRAM Features • 1 ,0 4 8 ,5 7 6 w ord by 16 bit organization • S ingle 3 .3 V ± 0 .3 V or 5 .0 V ± 0 .5 V pow er supply • 4 0 9 6 refresh cy cles/256m s • High P erform ance: Low P ow er Dissipation |
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cles/256m DSU-00 43G9618 MMDD35DSU-00 a8303 | |
IBM 1Mx4Contextual Info: IB M 1 1 D 1 4 8 0 B A IB M 1 1 E 1 4 8 0 B A 1M x 36 ECC-on-SIMM Features Single-error-correct SEC high-speed ECC • 72-Pin JEDEC-Standard Single In-Line Memory Module algorithm • Performance: Single 5V ± 0.25V Power Supply All inputs & outputs are fully TTL & C M O S |
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72-Pin 130ns 11D1480BA MMDS04DSU-01 IBM11D1480BA IBM11E1480BA IBM11E1480BA IBM 1Mx4 | |
Contextual Info: IBM11S2320NL2M x 3212/8, 5.0V, Au. IBM11S2320NN2M x 3212/8, 3.3V, Au. IBM11S1320NP IBM11S2320NP IBM11S1320NM IBM11S2320NM 1M/2M x 32 SO DIMM Module Features • 72-Pin Small Outline Dual-In-Line Memory Module • Performance: -60 -70 tRAC RAS Access Time 60ns |
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IBM11S2320NL2M IBM11S2320NN2M IBM11S1320NP IBM11S2320NP IBM11S1320NM IBM11S2320NM 72-Pin 110ns 130ns | |
442250Contextual Info: IBM0116165 IBM0116165M IBM0116165B IBM0116165P 1M x 16 12/8 EDO DRAM Features • 1 ,0 4 8 ,5 7 6 w o rd by 16 bit o rg a n iz a tio n • • S in g le 3 .3 V + 0 .3 V or 5 .0 V + 0 .5 V p o w e r s u p p ly . .n ^ S ta n d a rd P o w e r S P a n d L o w P o w e r (LP ) |
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IBM0116165 IBM0116165M IBM0116165B IBM0116165P SA14-4225-06 442250 | |
Contextual Info: IBM11S2320NL2M x 3212/8, 5.0V, Au. IBM11S2320NN2M x 3212/8, 3.3V, Au. IBM11S1320LP IBM11S2320LP IBM11S1320LM IBM11S2320LM 1M/2M x 32 SO DIMM Module Features • 72-Pin Small Outline Dual-In-Line Memory Module • Performance: -60 -70 tRAC RAS Access Time 60ns |
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IBM11S2320NL2M IBM11S2320NN2M IBM11S1320LP IBM11S2320LP IBM11S1320LM IBM11S2320LM 72-Pin 110ns 130ns | |
1314EContextual Info: IB M 1 1 N 1 6 4 5 L IB M 1 1 N 1 7 3 5 Q 1 M x 6 4 /7 2 D R A M M o d u le Features • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-line Memory Module • Optimized for byte-write, non-parity, or ECC applications. • 1 Mx64, 1Mx72 Extended Data Out Page Mode |
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1Mx72 SA14-4630-05 1314E | |
4468 8 PIN
Abstract: DATASHEET 4468 TCHD
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IBM11S2320NL2M IBM11S2320NN2M IBM11S1320LP IBM11S2320LP IBM11S1320LM IBM11S2320LM 72-Pin 110ns 130ns 4468 8 PIN DATASHEET 4468 TCHD | |
IBM11M4730C4MContextual Info: IBM11M4730C4M x 72 E12/10, 5.0V, Au. IBM11M1645L Preliminary 1M x 64 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • 1Mx64 Extended Data Out Page Mode DIMM • Performance: • • • • -60 -70 -Buffered inputs except RAS, Data |
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IBM11M4730C4M E12/10, IBM11M1645L 1Mx64 104ns 124ns SA14-4617-02 | |
Contextual Info: Discontinued 9/98 - last order; 3/99 last ship IBM11S2320NL2M x 3212/8, 5.0V, Au. IBM11S2320NN2M x 3212/8, 3.3V, Au. IBM11S1325LP IBM11S2325LP 1M/2M x 32 SO DIMM Module Features • 72-Pin Small Outline Dual-In-Line Memory Module • Performance: -60 tRAC RAS Access Time |
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IBM11S2320NL2M IBM11S2320NN2M IBM11S1325LP IBM11S2325LP 72-Pin 104ns 128ms | |
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IBM11M4730C4MContextual Info: IBM11M4730C4M x 72 E12/10, 5.0V, Au. IBM11M1645L 1M x 64 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • 1Mx64 Extended Data Out Page Mode DIMM • Performance: • • • • -60 -70 -Buffered inputs except RAS, Data |
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IBM11M4730C4M E12/10, IBM11M1645L 1Mx64 104ns 124ns | |
014400mContextual Info: IBM014400M IBM014400P 1M x 4 Low Power DRAM Features • 1,048,576 word by 4 bit organization • Power Supply: 3.3 ± 0.3V or 5.0 ± 0.5V • 1024 Refresh Cycle Rate/128m s Low Power Dissipation - Active max - 85m A/70m A (5.0V) - 95m A/80m A (3.3V) - Standby (TTL Inputs) - 1 ,0mA (max) |
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IBM014400M IBM014400P Rate/128m 110ns 130ns J-26/20 300mil) 014400M 014400P | |
IBM REV 2.8
Abstract: 4620 IBM11M4730C4M
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IBM11M4730C4M E12/10, IBM11M1735B 1Mx72 104ns 124ns IBM REV 2.8 4620 | |
IBM11M4730C4MContextual Info: IBM11M4730C4M x 72 E12/10, 5.0V, Au. IBM11M1645B 1M x 64 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • 1Mx64 Extended Data Out Page Mode DIMM • Performance: -60 -70 RAS Access Time 60ns 70ns CAS Access Time 20ns 25ns |
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IBM11M4730C4M E12/10, IBM11M1645B 1Mx64 104ns 124ns | |
Contextual Info: Discontinued 9/98 - last order; 3/99 last ship IBM11N1645L1M x 64 E10/10, 3.3V, Au, EDOMMDL24DSU-001020631. IBM11N1735Q1M x 72 E10/10, 3.3V, Au, EDOMMDL24DSU-001020631. IBM11N1645L IBM11N1735Q 1M x 64/72 DRAM Module Features • 168 Pin JEDEC Standard, Unbuffered 8 Byte |
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IBM11N1645L1M E10/10, EDOMMDL24DSU-001020631. IBM11N1735Q1M IBM11N1645L IBM11N1735Q 1Mx64, 1Mx72 | |
Contextual Info: IBM11M1640B1M x 6410/10, 5.0V, AuMMDL19DSU-001015527. IBM11M1640B 1M x 64 DRAM MODULE Features • Optimized for byte-write non-parity applications • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • System Performance Benefits: - • 1Mx64 Fast Page Mode DIMM |
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IBM11M1640B1M AuMMDL19DSU-001015527. IBM11M1640B 1Mx64 110ns 130ns SA14-4605-02 | |
IBM11M4730C4MContextual Info: IBM11M4730C4M x 72 E12/10, 5.0V, Au. IBM11M1645B 1M x 64 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • 1Mx64 Extended Data Out Page Mode DIMM • Performance: -60 -70 RAS Access Time 60ns 70ns CAS Access Time 20ns 25ns |
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IBM11M4730C4M E12/10, IBM11M1645B 1Mx64 104ns 124ns | |
IBM0118180M
Abstract: IBM0118180P1M
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IBM0118180M IBM0118180P1M IBM11T1640LP VSS/18VCC 110ns 130ns | |
Contextual Info: Discontinued 9/98 - last order; 3/99 last ship IBM11T1645LP 1M x 6410/10, 3.3V, EDOMMDD41DSU-001019232. IBM11T1645LP 1M x 64 144 PIN SO DIMM Features • 144 Pin JEDEC Standard, 8 Byte Small Outline Dual In-line Memory Module with 8 Byte busses • Au contacts |
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IBM11T1645LP EDOMMDD41DSU-001019232. IBM11T1645LP 1Mx64 VSS/18VCC 104ns 124ns | |
Contextual Info: IBM11M1640L1M x 6410/10, 5.0V, AuMMDL23DSU-001016928. IBM11M1640L 1M x 64 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • 1Mx64 Fast Page Mode DIMM • Performance: -60 -70 tRAC RAS Access Time 60ns 70ns tCAC CAS Access Time |
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IBM11M1640L1M AuMMDL23DSU-001016928. IBM11M1640L 1Mx64 110ns 130ns SA14-4613-02 |