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    014400m

    Abstract: No abstract text available
    Text: 014400M IBM014400P 1M x 4 Low Power DRAM Features • 1,048,576 word by 4 bit organization • Power Supply: 3.3 ± 0.3V or 5.0 ± 0.5V • 1024 Refresh Cycle Rate/128m s Low Power Dissipation - Active max - 85m A/70m A (5.0V) - 95m A/80m A (3.3V) - Standby (TTL Inputs) - 1 ,0mA (max)


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    PDF IBM014400M IBM014400P Rate/128m 110ns 130ns J-26/20 300mil) 014400M 014400P

    0316809c

    Abstract: No abstract text available
    Text: Alphanumeric Index Part Num ber Type O rganization Features Page Num ber IBM011616 0. D R A M . 1M x 1 6 . 12/8, 5 .0 V . . 249 IBM0116160 B . . D R A M . 1M x 1 6 . 12/8, 3 .3 V . 249


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    PDF IBM011616 IBM0116160 IBM0116160M IBM0116160P. IBM011618 IBM0165800B. 0316169C 0316409C 0316809C 0316809c

    0118160B

    Abstract: 0116165B 014400B 0117805 014400
    Text: Alphanumeric Index Part Number Type Organization Features Page Number IBM 0116160. .DRA M . . 1M x 16. 12/8, 5 . 0 V .343 IBM0116160M .D R A M . . 1 M x 16. 12/8, 5.0V, LP, S R .343


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    PDF IBM0116160M 0116160P. 0116165B. 0116165M 0118160B 0116165B 014400B 0117805 014400

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    Abstract: No abstract text available
    Text: IBM014400 014400M IBM014400B IBM014400P 1M X 4 10/10 DRAM Features • 1,048,576 word by 4 bit organization Power Dissipation - Active max • Power Supply: 3.3 ± 0.3V or 5.0 ± 0.5V - 85 mA / 70 mA (5.0V ) - 95 mA / 80 mA (3.3V) - Standby Current: T TL Inputs (max)


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    PDF IBM014400 IBM014400M IBM014400B IBM014400P 110ns 130ns Fa00mil;