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    Vishay Siliconix SI7772DP-T1-GE3

    MOSFET N-CH 30V 35.6A PPAK SO-8
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    DigiKey SI7772DP-T1-GE3 Cut Tape 5,710 1
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    SI7772DP-T1-GE3 Digi-Reel 5,710 1
    • 1 $0.48
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    SI7772DP-T1-GE3 Reel 3,000
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    New Advantage Corporation SI7772DP-T1-GE3 15,000 1
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    CTS Corporation 353NB3I777T

    XTAL OSC VCXO 77.7600MHZ HCMOS
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    DigiKey 353NB3I777T Reel 1,000
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    Avnet Americas 353NB3I777T Reel 12 Weeks 1,000
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    Mouser Electronics 353NB3I777T
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    Avnet Abacus 353NB3I777T Reel 14 Weeks 1,000
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    CTS Corporation 353WB3I777T

    XTAL OSC VCXO 77.7600MHZ HCMOS
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    DigiKey 353WB3I777T Reel 1,000
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    Avnet Americas 353WB3I777T Reel 12 Weeks 1,000
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    Mouser Electronics 353WB3I777T
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    Avnet Abacus 353WB3I777T Reel 14 Weeks 1,000
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    CTS Corporation 353SB3I777T

    XTAL OSC VCXO 77.7600MHZ HCMOS
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    DigiKey 353SB3I777T Reel 1,000
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    Avnet Americas 353SB3I777T Reel 12 Weeks 1,000
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    Mouser Electronics 353SB3I777T
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    Avnet Abacus 353SB3I777T Reel 14 Weeks 1,000
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    CTS Corporation 353WB5I777T

    XTAL OSC VCXO 77.7600MHZ HCMOS
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    DigiKey 353WB5I777T Reel 1,000
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    Avnet Americas 353WB5I777T Reel 24 Weeks 1,000
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    Mouser Electronics 353WB5I777T
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    Avnet Abacus 353WB5I777T Reel 26 Weeks 1,000
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    I777 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    T80023

    Abstract: No abstract text available
    Text: jl L PRO D UCT NO. 95547- 41.91±0.1 i'} - i a — ^>1 VS/777777;J//J77/7JS7/?7//77777Tr/77/i7777T7% A B O V E P .C .B . RIG H T P U S H ROD TT 5 111 IHI- DIM.S HE- B E L O W P .C .B . L E F T P U S H ROD mot’ l code rev. A 8 C toterance unless otherwise specified


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    95547NO. VS/777777 J//J77/7JS7/ 7//77777Tr/77/i7777T7% T50QG2 T50098 T5Q216 T80023 /27/a* 27/gf PDF

    tmp90c84

    Abstract: No abstract text available
    Text: TOSHIBA TMP90PH48 CMOS 8-BIT MICROCONTROLLERS TMP90PH48F 1. OUTLINE AND CHARACTERISTICS The TMP90PH48 is a system evalution LSI having a built in One-Time PROM for TMP90C848. A programming and verification for the internal PROM is achieved by using a general EPROM programmer with an adapter socket.


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    TMP90PH48F TMP90PH48 TMP90PH48 TMP90C848. TMP90C848 04000H tmp90c84 PDF

    Untitled

    Abstract: No abstract text available
    Text: 16Mbit Synchronous DRAM Series ♦HYUNDAI HY57V164010- 4Mx4bit Synchronous DRAM HY57V168010- 2Mx8blt Synchronous DRAM HY57V161610- 1Mx16bit Synchronous DRAM DESCRIPTION The HY57V164010, HY57V168010, HY57V161610 Programmable options include the length of are high speed 3.3 Volt synchronous dynamic RAMs


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    16Mbit HY57V164010- HY57V168010- HY57V161610- 1Mx16bit HY57V164010, HY57V168010, HY57V161610 512Kbit 1SD10-Q3-NOV96 PDF

    Untitled

    Abstract: No abstract text available
    Text: HIIICRTRLYST Umili S E M I C O N D U C T O R CAT64LC10/20/40 1K/2K/4K-Bit Serial E2PROM FEATURES • SPI Bus Compatible Commercial and Industrial Temperature Ranges ■ Low Power CMOS Technology Power-Up Inadvertant W rite Protection ■ 2.5V to 6.0V Operation


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    CAT64LC10/20/40 CAT64LC10/20/40 64LC10SI-2 PDF

    Untitled

    Abstract: No abstract text available
    Text: HM6216255HI Series 4M high Speed SRAM 256-kword x 16-bit HITACHI ADE-203-1037A (Z) Rev. 1.0 Apr. 15, 1999 Description The HM6216255HI Series is a 4-M bit high speed static RAM organized 256-k word x 16-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell) and high


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    HM6216255HI 256-kword 16-bit) ADE-203-1037A 256-k 16-bit. 400-mil 44-pin PDF

    sine wave generation using pcm codec 1110 with ds

    Abstract: 04728
    Text: • DESCRIPTION The FUJITSU MB86434 is an AIU audio interface unit LSI for +5 V single-power source digital telephone devices, manufactured using CMOS process technology. The codec transmission filter characteristics meet G.712 standards, and can handle input and output in A-Law, |A-Law and linear conversion modes. The MB86434 also contains the


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    MB86434 F9803 sine wave generation using pcm codec 1110 with ds 04728 PDF

    UPD42S18160G5-70-7-JF

    Abstract: UPD42S18160G5707JF uPD42S18160-50 UPD4216160G uPD42S18160G5-50-7JF UPD4216160G5-50 PD42S18160-60 UPD42S18160G5-60-7JF NEC 4216160 UPD4218160G5-80-7JF
    Text: DATA SHEET / MOS INTEGRATED CIRCUIT / PD42S16160,4216160,42S18160,4218160 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE D e s c rip tio n The /xPD42S16160, 4216160, 42S18160, 4218160 are 1,048, 576 words by 16 bits CMOS dynamic RAMs. The


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    uPD42S16160 uPD4216160 uPD42S18160 uPD4218160 16-BIT, /xPD42S16160, 42S18160, PD42S16160, 42S18160 50-pin UPD42S18160G5-70-7-JF UPD42S18160G5707JF uPD42S18160-50 UPD4216160G uPD42S18160G5-50-7JF UPD4216160G5-50 PD42S18160-60 UPD42S18160G5-60-7JF NEC 4216160 UPD4218160G5-80-7JF PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET E.S.D NOISE CLIPPING DIODES NNCD3.3E to NNCD12E ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES 200 mW TYPE PACKAGE DIMENSIONS This product series is a diode developed for E.S.D (Electrostatic Discharge) noise protection. Based on the IEC1000-4-2 test on


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    NNCD12E IEC1000-4-2 NNCD12E IEC1000-42) PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION PINNING - SOT404 QUICK REFERENCE DATA SYMBOL PARAMETER w o > N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface


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    OT404 BUK9656-30 PDF

    R7F7

    Abstract: No abstract text available
    Text: Preliminary H M 5216165 S e r ie s 524,2SS-word x 16-blt x 2-bank Syn ch ro n o u s D ynam ic R A M HITACHI All inpuls and outputs are referred to the rising e d g e o f th e c lo c k in p u t. T h e H M 5 2 1 6 1 6 5 is offered in 2 banks for improved performance.


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    16-blt HM5216165TT-10 HM5216165TT-12 HM5216165TT-15 400-mil 50-pin TTP-50D) HM5216165 073-Vm R7F7 PDF

    Untitled

    Abstract: No abstract text available
    Text: M OSEL VITELIC V54C316802VA HIGH PERFORMANCE 3.3 VOLT2M X 8 SYNCHRONOUS DRAM 2 BANKS X 1MBit X 8 CAS Latency = 3 PRELIMINARY 8 10 12 System Frequency fCK 125 MHz 100 MHz 83 MHz Clock Cycle Tim e (tcK 3 ) 8 ns 10 ns 12 ns Clock Access Tim e (tAC3) 7 ns 8 ns


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    V54C316802VA V54C316802VA 44-Pin L0-15 PDF

    rca thyristor manual

    Abstract: HN623258 101490
    Text: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM P> Jc^< j


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    PDF

    R40 AH

    Abstract: No abstract text available
    Text: HM5283206 Series 131,072-word x 32-bit x 2-bank Synchronous Graphic RAM HITACHI ADE-203-223A Z Rev. 1.0 May. 30, 1996 Description All inputs and outputs signals refers to the rising edge of the clock input. The HM5283206 provides 2 banks to realize better performance. 8 column block write function and write per bit function are


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    HM5283206 072-word 32-bit ADE-203-223A Hz/83 Hz/66 z//77////////a QQ27flfl2 R40 AH PDF

    UPD4216805L

    Abstract: No abstract text available
    Text: NEC MOS INTEGRATED CIRCUIT j u P D 42S 16805L , 4 2 1 6 8 0 5 L 3.3 V OPERATION 16 M BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, HYPER PAGE MODE D escription The //PD42S16805L, 4216805L are 2 097 152 words by 8 bits dynamic CMOS RAMs w ith optional hyper page mode.


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    uPD42S16805L uPD4216805L PD42S16805L, 4216805L 28-pin //PD42S16805L-A60, 4216805L-A60 PD42S16805L-A70, 4216805L-A70 PDF

    ES-45714-001

    Abstract: VERTICAL IC LA 7840 714-3004 ic la 7840
    Text: no te 1 . ; HOUSING M ATL: LCP, U L94V - 0, COLOR B LA C K T E R M IN A L M ATL: CO PPER A L L O Y FINISH: S E L E C T GOLD: 30 N.I. NIN IN CO N TACT A R E A S E L E C T TIN: 150 N.I. NIN IN S O LD E R A R E A O V E R A L L NICKEL U N D E R P L A T E . PRO DUCT SPECIRICATION:


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    PS-45719-001. ES-45714-001. PS-45719-001 SD-457K-001_ ES-45714-001 VERTICAL IC LA 7840 714-3004 ic la 7840 PDF

    sm 0038 PIN DIAGRAM

    Abstract: SMH63VN392M22X40T2 SMH450
    Text: SMH Series a Snap Mount • Large Capacitance ■ High CV ■ High Ripple ■ +85°C Maximum Temperature The SMH series capacitors are the standard 85°C, large capacitance, snap-in capacitors from United Chem-Con. The load life for the SMH series is 2,000 hours at 85°C with the rated ripple current


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    SMH16VN223M30X30 SMH63VN103M35X40 120Hz) SMH200VN471M25X30 SMH400VN221M30X35 sm 0038 PIN DIAGRAM SMH63VN392M22X40T2 SMH450 PDF

    FT-707

    Abstract: No abstract text available
    Text: TO SHIBA TENTATIVE TC 59S6417/09/05B FT-70.-75.-80 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 1 ,0 4 8 ,5 7 6 -W O R D S X 4 B A N K S X 16-BITS S YN C H R O N O U S D Y N A M IC RAM 2 ,0 9 7 ,1 5 2 -W O R D S X 4 B A N K S X 8-BITS S Y N C H R O N O U S D Y N A M IC R AM


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    59S6417/09/05B FT-70 16-BITS TC59S6417BFT 576words TC59S6409BFT TC59S6405BFT 6417/09/05B 62MAX FT-707 PDF

    3240B

    Abstract: No abstract text available
    Text: HM5241605C Series 131,072-word x 16-bit x 2-bank Synchronous Dynamic RAM HITACHI ADE-203-381B Z Rev. 2.0 Jan. 7, 1997 Description All inputs and outputs are referred to the rising edge of the clock input. The HM5241605C is offered in 2 banks for improved performance.


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    HM5241605C 072-word 16-bit ADE-203-381B Hz/57 44Rb203 3240B PDF

    Untitled

    Abstract: No abstract text available
    Text: HB526C164EN Series 524,288-word x 64-bit x 2-bank Synchronous Dynamic RAM Module HITACHI ADE-203-628A Z Rev. 1.0 Feb. 7, 1997 Description The HB526C164EN belongs to 8-byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 8-byte processor applications. The HB526C164EN is a 5 12k X 64


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    HB526C164EN 288-word 64-bit ADE-203-628A 16-Mbit HM5216165TT) 24C02) PDF

    uPD4265160

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿¿PD4264160, 4265160 64 M-BIT DYNAMIC RAM 4 M-WORD BY 16-BIT, FAST PAGE MODE D escrip tio n The /iPD4264160,4265160 are 4,194,304 words by 16 bits dynamic CMOS RAMs. The fast page mode capability realize high speed access and low power consumption.


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    uPD4264160 uPD4265160 16-BIT, /iPD4264160 50-pin /iPD4264160-A50 PD4265160-A50 /xPD4264160-A60 /jPD4265160-A60 juPD4264160-A70 PDF

    Untitled

    Abstract: No abstract text available
    Text: ADE-203-186A Z i HM5241605 Series 131,072-word x 16-bit x 2-bank Synchronous Dynamic RAM H IT A C H I All inputs and outputs are referred to the rising edge of the clock input. The HMS241605 is offered in 2 banks for improved performance. 3.3 V Power supply


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    ADE-203-186A HM5241605 072-word 16-bit HMS241605 Hz/57 Hz/50 4inb203 PDF

    W777777

    Abstract: No abstract text available
    Text: JUN 1 2 1992 Ijr‘ VITEUC V52C8128 MULTIPORT VIDEO RAM WITH 128KX8 DRAM AND 256 X 8 SAM HIGH PERFORMANCE V52C8128 80 10 Max. RAS Access Time, tRAc 80 ns 100 ns Max. CAS Access Time, (tcAc) 25 ns 25 ns Max. Column Address Access Time, (t^ ) 45 ns 50 ns Min. Fast Page Mode Cycle Time, (tpc)


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    V52C8128 128KX8 W777777 PDF

    Untitled

    Abstract: No abstract text available
    Text: M OSEL VITELIC V54C365164VB HIGH PERFORMANCE 143/133/125 MHz 3.3 V 0 L T 4 M X 16 SYNCHRONOUS DRAM 4 BANKS X 1Mbit X 16 PRELIMINARY 7 75 8PC 8 System Frequency fCK 143 MHz 133 MHz 125 MHz 125 MHz Clock Cycle Tim e (tcK 3 ) 7 ns 7.5 ns 8 ns 8 ns Clock Access Tim e (tAC3) CAS Latency = 3


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    V54C365164VB 54-Pin V54C365164VB PDF

    5380A

    Abstract: No abstract text available
    Text: L5380/L53C80 CMOS SCSI Bus Controller FEATURES DESCRIPTION □ Asynchronous Transfer Rrate U p to 4 M bytes/sec □ R n and Functionally Com patible w ith NCR5380, but 2.5x Faster □ Low Pow er C M O S Technology □ On-Chip SC SI Bus D rivers □ Supports A rbitration, Selection/


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    NCR5380, 40/48-pin 44-pin L5380/L53C80 L5380/L53C80 L53C80PC4 5380A PDF