Untitled
Abstract: No abstract text available
Text: KSC5026M NPN Silicon Transistor Features • High Voltage and High Reliability • High Speed Switching • Wide SOA TO-126 1 1. Emitter Absolute Maximum Ratings 2.Collector 3.Base TA = 25°C unless otherwise noted Value Units Collector-Base Voltage 1100 V
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KSC5026M
O-126
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QS 100 NPN Transistor
Abstract: No abstract text available
Text: FMBS2383 NPN Epitaxial Silicon Transistor Features • Power Amplifier • Collector-Emitter Voltage : VCEO=160V • Current Gain Bandwidth Product : fT=120MHz E C 1 6 2 5 3 4 C B C C SuperSOTTM-6 Marking : 2383 Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted
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FMBS2383
120MHz
QS 100 NPN Transistor
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C5026M-O
Abstract: equivalent transistor for c5026m QS 100 NPN Transistor KSC5026M KSC5026MOS
Text: KSC5026M NPN Silicon Transistor Features • High Voltage and High Reliability • High Speed Switching • Wide SOA TO-126 1 1. Emitter Absolute Maximum Ratings 2.Collector 3.Base TA = 25°C unless otherwise noted Value Units VCBO Collector-Base Voltage 1100
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Original
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KSC5026M
O-126
C5026M-O
equivalent transistor for c5026m
QS 100 NPN Transistor
KSC5026M
KSC5026MOS
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BDX53 equivalent
Abstract: bdx53c equivalent bdx54c equivalent BDX53 BDX54 equivalent BDX53B BDX53A BDX53C BDX54 BDX54A
Text: BDX53/A/B/C NPN Epitaxial Silicon Transistor Applications • Hammer Drivers, Audio Amplifiers Applications • Power Liner and Switching Applications Features • Power Darlington TR • Complement to BDX54, BDX54A, BDX54B and BDX54C respectively Equivalent Circuit
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Original
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BDX53/A/B/C
BDX54,
BDX54A,
BDX54B
BDX54C
O-220
BDX53
BDX53A
BDX53B
BDX53C
BDX53 equivalent
bdx53c equivalent
bdx54c equivalent
BDX53
BDX54 equivalent
BDX53B
BDX53A
BDX53C
BDX54
BDX54A
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Untitled
Abstract: No abstract text available
Text: FMBS2383 NPN Epitaxial Silicon Transistor Features • Power Amplifier • Collector-Emitter Voltage : VCEO=160V • Current Gain Bandwidth Product : Tf =120MHz E C 1 6 2 5 3 4 C B C SuperSOT TM C -6 Marking : 2383 Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted
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Original
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FMBS2383
120MHz
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PDF
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BDX53 equivalent
Abstract: bdx53c equivalent
Text: BDX53/A/B/C NPN Epitaxial Silicon Transistor Applications • • Hammer Drivers, Audio Amplifiers Applications Power Liner and Switching Applications Features • • Power Darlington TR Complement to BDX54, BDX54A, BDX54B and BDX54C respectively Equivalent Circuit
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Original
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BDX53/A/B/C
BDX54,
BDX54A,
BDX54B
BDX54C
O-220
BDX53
BDX53A
BDX53B
BDX53C
BDX53 equivalent
bdx53c equivalent
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Untitled
Abstract: No abstract text available
Text: BC846 - BC850 NPN Epitaxial Silicon Transistor Features 3 • • • Switching and Amplifier Applications Suitable for automatic insertion in thick and thin-film circuits Low Noise: BC849, BC850 • Complement to BC856 . BC860 2 1 SOT-23 1. Base 2. Emitter 3. Collector
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Original
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BC846
BC850
BC849,
BC856
BC860
OT-23
BC846
BC847/850
BC848/849
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PDF
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sot-23 Marking B1
Abstract: BC850 fairchild sot-23 Device Marking pc b1 marking sot-23 720 SOT23 BC846 BC849 BC856 BC860 MARKING 720 SOT23
Text: BC846 - BC850 NPN Epitaxial Silicon Transistor Features 3 • Switching and Amplifier Applications • Suitable for automatic insertion in thick and thin-film circuits • Low Noise: BC849, BC850 • Complement to BC856 . BC860 2 1 SOT-23 1. Base 2. Emitter 3. Collector
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Original
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BC846
BC850
BC849,
BC856
BC860
OT-23
BC846
BC847/850
BC848/849
sot-23 Marking B1
BC850
fairchild sot-23 Device Marking pc
b1 marking sot-23
720 SOT23
BC849
BC856
BC860
MARKING 720 SOT23
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transistor A114
Abstract: a114 transistor transistor a114 esd 2N7002KW
Text: 2N7002KW N-Channel Enhancement Mode Field Effect Transistor Features • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Pb Free/RoHS Compliant
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Original
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2N7002KW
2N7002KW
JESD22
OT-323
transistor A114
a114 transistor
transistor a114 esd
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PDF
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Untitled
Abstract: No abstract text available
Text: 2N7002KW N-Channel Enhancement Mode Field Effect Transistor Features • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Pb Free/RoHS Compliant
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Original
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2N7002KW
JESD22
OT-323
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PDF
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Untitled
Abstract: No abstract text available
Text: QFET TM FQA28N15 150V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
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FQA28N15
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FQA28N15
Abstract: No abstract text available
Text: QFET TM FQA28N15 150V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
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FQA28N15
FQA28N15
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Untitled
Abstract: No abstract text available
Text: Features ● ● ● ● ● ● ● ● ● ● ● Non-Isolated Synchronous rectification design Adjustable Output voltage 2, 3, 4AMP Adjustable Positive Step Down Integrated Switching Regulator Over load protection 125% full load typical Remote ON/OFF Control(Ground Off)
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Original
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UL94V-0
SIP12
12-Pin
F/10V
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PDF
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Untitled
Abstract: No abstract text available
Text: INNOLINE Output Voltage Features ●● Adjustable Non-Isolated ● ● ● ● ● ● ● ● DC/DC-Converter 1-2AMP Adjustable Positive Step Down Integrated Switching Regulator Internal Short Circuit Protection ON/OFF Control Ground Off UL94V-0 Package Material
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Original
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UL94V-0
12-Pin
SIP12
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PDF
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B0725
Abstract: No abstract text available
Text: Tem ic VQIOOIJ/P Siliconix N-Channel Enhancement-Mode MOS Transistors Product Summary Part Num ber V BR DSS M in (V) VQ1001J 30 VQ1001P Features Benefits • • • • • • • • • • Low On-Resistance: 0.85 Q Low Threshold: 1.4 V Low Input Capacitance: 38 pF
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OCR Scan
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VQ1001J
VQ1001P
VQ1001J/P
P-37655--Rev.
B0725
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PDF
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Untitled
Abstract: No abstract text available
Text: Temic siiiconix_ VN3515L/VN4012L N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS Mín (V) rns^n) Max (Q) VGS(th) Id (A) (V) VN3515L 350 15 @ V GS = 4.5 V 0.6 to 1.8 0.15 VN4012L 400 12 @ V GS = 4.5 V 0.6 to 1.8
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OCR Scan
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VN3515L/VN4012L
VN3515L
VN4012L
P-38281--
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PDF
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TI1151
Abstract: TI-1151 P1AM TIL155 TI1153 TI-115 5318T TI-1153
Text: TYPES TI 1151, TI 1152, TI 1153, TI 1154, TI 1155, TI 1156 N-P-N TRIPLE-DIFFUSED MESA SILICON TRANSISTORS 50 2 3 52 5j- 5m ¡¡¡S “ HIGH-VOLTAGE, HIGH-FREQUENCY POWER TRANSISTORS FOR INDUSTRIAL APPLICATIONS D Z • 80 Watts at 55°C Case Temperature =!
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OCR Scan
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30df
Abstract: AI mm sot 553 TIP29BF TIP29CF TIP29DF TIP29F TIP30AF TIP30BF TIP30CF TIP30DF
Text: TIP30F TIP30AF; TIP30BF ^ T1P30CF; TIP30DF SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistor in a S O T 1 8 6 envelope with an electrically insulated mounting base, for use in audio output stages and for general purpose amplifier and high-speed switching applications.
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OCR Scan
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TIP30F
TIP30AF;
TIP30BF
TIP30CF;
TIP30DF
OT186
TIP29F,
T1P29AF,
TIP29BF,
TIP29CF
30df
AI mm sot 553
TIP29BF
TIP29DF
TIP29F
TIP30AF
TIP30BF
TIP30CF
TIP30DF
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2SC2331
Abstract: SIRBA TC5344A if4g 2SA1008 PBT GF 20 PBT GF 10 fr 2SC2331 Y
Text: T -5 > • S / - h s < r> — Silicon Power Transistor 2SC2331 N R N x t ^ + '> 7 ; H * > 'J U > h =7 I i f f l 2 S C 2 3 3 1 ia iS fê x ^ ^ 7 > /X n -, v - f > rm t U K ? n f c 7 - f > 7'- w t - ^ ( f - f i ¿*<7 K ÿ ^ f '< £ i r M M x - t o iff : m m )
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OCR Scan
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2SC2331
2SA1008
sC-46
220AB
SIRBA
TC5344A
if4g
2SA1008
PBT GF 20
PBT GF 10 fr
2SC2331 Y
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Untitled
Abstract: No abstract text available
Text: Ordering number: EN4392A Overview Package Dimensions The LB 1674V is a small motor driver ideal for mini-cassettes, headphone stereos and micro-cassettes. unit : mm 3175A-SSOP24 [LB 1674V] O.IS Functions and Features & it • 3-phase unipolar, brushless, sensorless m otor driver
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OCR Scan
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EN4392A
175A-SSOP24
SSOP24
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PDF
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M5206P
Abstract: No abstract text available
Text: MITSUBISHI SOUND PROCESSOR ICs M5206P LINEAR CONTROL DUAL VCA 1C DESCRIPTION The M 52 06 P has 2 channels o f built-in linear controlled VCA Voltage controlled amplifier . These channels can be controlled independently. The ICs applications include radio cassette tape recorders, car audio systems, and Hi-Fi
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OCR Scan
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M5206P
10OdB
M5206P
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PDF
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Untitled
Abstract: No abstract text available
Text: HARRIS SEmCOND SECTOR SbE D H 430SS71 □ □M31bci ESS B H A S HI-7153/883 ¡33 8-Channel, 10-Bit, High Speed July1992 Sampling A/D Converter Features Description • This Circuit Is Processed in Accordance to Uil-Std883 and is Fully Conformant Under the Provisions of
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OCR Scan
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430SS71
M31bc
HI-7153/883
10-Bit,
July1992
Uil-Std883
20kHz
150mW
MH-M-38510Compiant
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PDF
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SOUND PROCESSOR ICs M5207L01/M5207L05 LINEAR CONTROL DUAL VCA IC DESCRIPTION T h e M 5 2 0 7 L is a variable gm -type V C A V o ltag e C ontrol A m p lifier IC designed fo r linear controlled electro nic volum e control. T h e IC o ffe rs capability o f controlling each channel
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OCR Scan
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M5207L01/M5207L05
M5207L01
M5207L05
QQ223b2
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PDF
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Untitled
Abstract: No abstract text available
Text: Temic Semiconductors 2 K x 8 CMOS Dual Port RAM M67132/M67142 Description The M67132/67142 are very low power CMOS dual port static RAMs organized as 2048 x 8. They are designed to be used as a stand-alone 8 bit dual port RAM or as a combination MASTER/SLAVE dual port for 16 bits or
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OCR Scan
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M67132/M67142
M67132/67142
SCC9301033)
67I32E
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PDF
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