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    I200N Search Results

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    Diotec Semiconductor AG DI200N04PQ

    MOSFET PWRQFN 5X6 40V 0.0013OHM
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    DigiKey DI200N04PQ Reel 5,000 5,000
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    DI200N04PQ Cut Tape 5,000 1
    • 1 $2.52
    • 10 $1.719
    • 100 $2.52
    • 1000 $0.95163
    • 10000 $0.9385
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    DI200N04PQ Digi-Reel 5,000 1
    • 1 $2.52
    • 10 $1.719
    • 100 $2.52
    • 1000 $0.95163
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    Mouser Electronics DI200N04PQ 4,968
    • 1 $2.37
    • 10 $1.72
    • 100 $1.24
    • 1000 $0.939
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    TME DI200N04PQ 1
    • 1 $1.5
    • 10 $1.35
    • 100 $1.07
    • 1000 $0.97
    • 10000 $0.89
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    Diotec Semiconductor AG DI200N10D2

    MOSFET D2PAK N 100V 200A
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    DigiKey DI200N10D2 Bulk 625 1
    • 1 $3.23
    • 10 $2.104
    • 100 $1.4803
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    Mouser Electronics DI200N10D2
    • 1 $2.71
    • 10 $1.81
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    • 1000 $1.09
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    TME DI200N10D2 544 1
    • 1 $1.85
    • 10 $1.55
    • 100 $1.29
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    STMicroelectronics STI200N6F3

    MOSFET N-CH 60V 120A I2PAK
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    DigiKey STI200N6F3 Tube 1,000
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    Diotec Semiconductor AG DI200N04D2

    MOSFET D2PAK N 40V 200A
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    DigiKey DI200N04D2 Bulk 800
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    TME DI200N04D2 1
    • 1 $2.82
    • 10 $2.54
    • 100 $2.02
    • 1000 $1.88
    • 10000 $1.81
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    Festo VADMI-200-N

    VACUUM GENERATOR
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    DigiKey VADMI-200-N Bulk 1
    • 1 $1039.59
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    I200N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BD291

    Abstract: 2SC3883 SD1534-8 2S-C3883 bd292 trw rf transistors 2SC2198 Sanken NPN SD1428 2N5034 2N5035
    Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO PD Max r hFE fT 'CBO Max Max Mln (Hz) (A) (8) on ON) 100 100 100 100 100 100 50 50 50 50 50 100 50 218 218 30 30 75 75 75 75 75 75 75 75 80 60 60 70 80 22 22 22 22 22


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    PDF DTS802 DTS804 STI802 STI804 2SC3658 2SC3883 2SD1455 2SD1911 BD291 SD1534-8 2S-C3883 bd292 trw rf transistors 2SC2198 Sanken NPN SD1428 2N5034 2N5035

    Untitled

    Abstract: No abstract text available
    Text: S5104bô 001L7E1 1Ö4 • u m TECHNOLOGY [ M T O L B E LIM I Final E le ctrica l S p ecificatio ns LTC1553 5-Bit Programmable Synchronous Switching Regulator Controller for Pentium Pro Processor February 1997 F€ATU߀S DCSCftlPTIOn ■ 5-Bit Digitally Programmable 1.8V to 3.5V Fixed


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    PDF S5104bà 001L7E1 LTC1553 LTC1430 LTC1435 LTC1438 LTC1435 S51fl4hfi 001b7M0 1553i

    C 5388

    Abstract: No abstract text available
    Text: Ü G B T ^ E ^ zl- ^ y f - 's v w r N '> i J - X Jj 1 I200N-120 n-> p - X j 1200V / 200A/ 1 IB * ! : Features • » *< High Speed Switching v ? > *? • /± SnH i Voltage Drive • te - T Low Inductance Module Structure : Applications -f > '< — $ o


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    PDF 1MBI200N-120 C 5388

    Untitled

    Abstract: No abstract text available
    Text: KMM366S823BTL PC66 SDRAM MODULE KMM366S823BTL SDRAM DIMM 8Mx64 SDRAM DIMM based on 8Mx8,4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S823BTL is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


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    PDF KMM366S823BTL KMM366S823BTL 8Mx64 400mil 168-pin KMM366S8238TL 000DIA±

    Viper L2A

    Abstract: opti 82c596 82C558N 82C465MV opti 82C556
    Text: 82C556/82C557/82C558N Viper Notebook Chipset Data Book Revision: 1.0 912-3000-032 May 25,199 5 Copyright Copyright 1995, OPTi Inc. All rights reserved. No part of this publication may be reproduced, transmitted, transcribed, stored in a retrieval system, or translated into any language or computer language, in any form or by any means, electronic, mechani­


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    PDF 82C556/82C557/82C558N Viper L2A opti 82c596 82C558N 82C465MV opti 82C556

    ASUS

    Abstract: No abstract text available
    Text: un Galileo Technology- System Controller with GT-64010A Preliminary PCI Interface for R4XXX/ Revision 1.1 R5000 Family CPUs December 1996 N O T E : A lw ays contact G alileo Technology for possible updates before starting a design. FEATURES Integrated system controller with PCI bus interface for


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    PDF GT-64010A R5000 R4600/4650/4700/R5000 50MHz 64-bit 256KB 512KB GT-64012 R4600/R4700) 512MB ASUS

    BLH Pressure Transducer wiring

    Abstract: BU 102S Model 2B31K AC1211 PT139 2B31J BLH DHF 2B31 BLH ELECTRONICS CALIBRATION BLH Pressure Transducer specifications D-HF
    Text: □ ANALOG DEVICES High Performance, Economy Strain Gage/RTD Conditioners FEATURES Low Cost Complete Signal Conditioning Function Low Drift: 0.5/nV/°C max " L " ; Low Noise: 1juV p-p max Wide Gain Range: 1 to 2 0 0 0 V /V Low Nonlinearity: 0.0025% max ("L ")


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    PDF 000V/V 140dB 000V/V) 60dB/Decade 100mA) BLH Pressure Transducer wiring BU 102S Model 2B31K AC1211 PT139 2B31J BLH DHF 2B31 BLH ELECTRONICS CALIBRATION BLH Pressure Transducer specifications D-HF

    i300n

    Abstract: No abstract text available
    Text: 600 volts class IGBT m odules N series • • • • • L o w s a t u r a t io n v o lta g e High s pe ed s w i t c h in g L o w s w i t c h in g noise High s h o r t- c i r c u it w i t h s t a n d c a p a b ility V o lta g e d riv e m e t h o d p e r m it s lo w p o w e r d r iv e


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    PDF I100N BI150NC I150N I200N I300N I400N BI600NP I600N

    4116 DRAM 16Kx1

    Abstract: 82C206 82C558
    Text: 82C556/82C557/82C558 Figure 2-3 82C557 SYSC Block Diagram I R ES ET PW RG D CLK ECLK LCLK HA[31:3] BE[7:0]# M /IO # D/C# W /R # /IN V /D IR TYO AD S # BRDY# NA# KEN #/LM EM # EADS#/(W B/W T#) HITM # CACHE# SM IACT# EC D OE# O C D O E# ECAWE#/CACSOO# OCAW E#/CACS1 O#


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    PDF 82C556/82C557/82C558 82C557 4116 DRAM 16Kx1 82C206 82C558

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC55V8512J/FT-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The TC55V8512J/FT is a 4,194,304-bit high-speed static random access memory SRAM organized as 524,288 words by 8 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it


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    PDF TC55V8512J/FT-12 288-WORD TC55V8512J/FT 304-bit 36-pi, SOJ36-P-400-1 44-P-400-0

    DQ380

    Abstract: U4 Package ADQ36
    Text: STI644006UD2-1OVG 168-PIN DIMMS 4M X 64 Bits SDRAM Unbuffered DIM M FEATURES GENERAL DESCRIPTION • Maximum frequency=100MHz tcc=10ns • Burst Mode Operation • Auto and self refresh capability (4096 cycles/64ms refresh) • • LVTTL compatible inputs and outputs


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    PDF STI644006UD2-1OVG 100MHz cycles/64ms 168-PIN STI644006UD2-10VG STI644006UD2-1 50-pin 400-mil DQ380 U4 Package ADQ36

    Untitled

    Abstract: No abstract text available
    Text: PCI 9050 TE August 31, 1996 VERSION 1.0 PCI Bus Target Interface Chip for Low Cost Adapters Featu res_ General Description_ • PCI Specification 2.1 Com pliant Target Interface Chip supporting low cost slave adapters. A llow s simple


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary CMOS SDRAM KM48S8030C 2M x 8Bit x 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • • • • The KM48S8030C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 8 bits, fabricated with SAMSUNG'S high performance CMOS technol­


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    PDF KM48S8030C KM48S8030C 10/AP

    a9333

    Abstract: No abstract text available
    Text: Preliminary KM416S8030 CMOS SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address • Four banks operation The KM416S8030 is 134,217,728 bits synchronous high data


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    PDF KM416S8030 16Bit KM416S8030 a9333

    Untitled

    Abstract: No abstract text available
    Text: STI642006UD1 -1OVG 168-PIN DIMMS 2M X 64 Bits SDRAM Unbuffered DIMM FEATURES GENERAL DESCRIPTION • • • The Simple Technology STI642006UD1-10VG is a 2M x 64 bits Synchronous Dynamic RAM SDRAM Dual In-line Memory Module (DIMM). TheSimpleTechnologySTI642C06UD1-10VG


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    PDF STI642006UD1 100MHz cycles/64ms 168-PIN STI642006UD1-10VG TheSimpleTechnologySTI642C06UD1-10VG 83MHz 75MHz 66MHz

    Untitled

    Abstract: No abstract text available
    Text: Ü G B T ^^zl-JU rN'>U-X j • ¡ s i i x - r " j * > ? m r N '> ij - X I200N-120 j 1 2 0 0 V /2 0 0 A / 2 f | M : Features " j T ' s V High Speed Switching •H/±S£ !j Voltage Drive Low Inductance Module Structure : A pplications >/< —^ Inverterfor Motor Drive


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    PDF 2MBI200N-120 egTg30

    2mb1200n-060

    Abstract: 2MB1200N 2MBI200N-060 sl 0380 2mb1200 sl 0380 r
    Text: I200N-060 j J 6 0 0 V /2 0 0 A / 2 flSifl •4rMt: ■ Features • » a * * * * High Speed Switching %W±MMh Voltage Drive Low Inductance Module Structure : Applications • i •AC,DC1J- — > ' < —9 Inverter for Motor Drive AC and DC Servo Drive Amplifier


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    PDF 2MBI200N-060 00V/200A/ J94/J94) 2mb1200n-060 2MB1200N 2MBI200N-060 sl 0380 2mb1200 sl 0380 r

    48v to 230v inverters circuit diagram

    Abstract: i300n bi50l120 2SC 2625 transistor 7MBR10NF120 2RI100G-160X2PX3 EVK71-050 2SC2625 application note 24v dc to 230v ac inverter fuji transistor catalog
    Text: Applications hiiiftH— j\\ Note: This catalog describes the m ain usages o f pow er transistors FUJI supplies these versatile elem ents fo r a w ide range of electronic equipm ent. Please contact FUJI fo r your particular application. 63 ; r - — I • Electronic ignitor use


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    PDF 2SD834 2SD1071 2SD1073 BR15NF120 BR25NF120 I25L-120x3 I50L-120x3 -120x3 48v to 230v inverters circuit diagram i300n bi50l120 2SC 2625 transistor 7MBR10NF120 2RI100G-160X2PX3 EVK71-050 2SC2625 application note 24v dc to 230v ac inverter fuji transistor catalog

    1 GBT 400 A 1200V

    Abstract: 1mb1200n-120 5l 0380 1MBI200N-120 1mbi200
    Text: ±IG BT^>>ZL-;U rN'>i|-XjJ 1 I200N-120 i& Ä * • f 4 t 'V * > 'f W N >> y - X J mm 1 2 0 0 V /2 0 0 A / 1 : Features >*? •^/E G E R i High Speed Switching Voltage Drive Low Inductance Module Structure : Applications ;✓/< — ^ • A C ,D C 1 f —#


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    PDF 1MBI200IM-120 200V/200A/ 1MBI200N-120 J94/J94) 1 GBT 400 A 1200V 1mb1200n-120 5l 0380 1MBI200N-120 1mbi200

    Untitled

    Abstract: No abstract text available
    Text: KMM366S824BTL PC66 SDRAM MODULE KMM366S824BTL SDRAM DIMM 8Mx64 SDRAM DIMM based on 4Mx16,4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S824BTL is a 8 M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


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    PDF KMM366S824BTL KMM366S824BTL 8Mx64 4Mx16 400mil 168-pin

    Transistor BFT 10C

    Abstract: HI1-516
    Text: f f l H A H R H i s I - 5 1 6 / 8 8 3 16 C hannel/D ifferential 8 Channel CMOS High Speed Analog M ultiplexer June 1 98 8 Features D escrip tio n • This C ircu it is P ro c e ss e d In A c c o rd a n c e to M il-S td 8 8 3 a n d Is Fully C o n fo rm a n t U n d e r th e P rovision s o f


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    PDF HI-516/883 Mil-Std-883 225ns 10OnA HI-516/883 fMil-M-38510 Transistor BFT 10C HI1-516