0235
Abstract: No abstract text available
Text: HY57V64420HGTP 4 Banks x 4M x 4Bit Synchronous DRAM DESCRIPTION The Hynix HY57V64420HGTP is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V64420HGTP is organized as 4banks of 4,194,304x4.
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HY57V64420HGTP
HY57V64420HGTP
864-bit
304x4.
HY57V644020HGTP
400mil
54pin
0235
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Untitled
Abstract: No abstract text available
Text: HY57V64420HG 4 Banks x 4M x 4Bit Synchronous DRAM DESCRIPTION The Hynix HY57V64420HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V64420HG is organized as 4banks of 4,194,304x4.
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Original
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HY57V64420HG
HY57V64420HG
864-bit
304x4.
HY57V644020HG
400mil
54pin
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BYTE18
Abstract: BYTE65 HYM7V75AS1601ATNG
Text: 16Mx72 bit SDRAM “Intel” Registered DIMM N-Series with PLL & PC/100 SDRAM Specification Supporting based on 16Mx4 SDRAM, LVTTL, 2/4-Banks & 4K/8KRefresh HYM7V75AS1600A/ HYM7V75AS1601A/ HYM7V75AS1630A/ HYM7V75AS1631A DESCRIPTION The HYM7V75AS1600A/ 75AS1601A/ 75AS1630A/ 75AS1631A N-Series are high speed 3.3-Volt
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16Mx72
PC/100
16Mx4
HYM7V75AS1600A/
HYM7V75AS1601A/
HYM7V75AS1630A/
HYM7V75AS1631A
75AS1601A/
75AS1630A/
BYTE18
BYTE65
HYM7V75AS1601ATNG
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Untitled
Abstract: No abstract text available
Text: HY57V64420HG 4 Banks x 4M x 4Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V64420HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V64420HG is organized as 4banks of 4,194,304x4.
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Original
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PDF
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HY57V64420HG
HY57V64420HG
864-bit
304x4.
HY57V644020HG
400mil
54pin
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Untitled
Abstract: No abstract text available
Text: HY57V64420HG 4 Banks x 4M x 4Bit Synchronous DRAM DESCRIPTION The Hynix HY57V64420HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V64420HG is organized as 4banks of 4,194,304x4.
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Original
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PDF
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HY57V64420HG
HY57V64420HG
864-bit
304x4.
HY57V644020HG
400mil
54pin
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Untitled
Abstract: No abstract text available
Text: u V I I u n It • • ‘M T U N D A 16Mx4 bit Synchronous DRAM Series HY57V644010/ HY57V644020/ HY57V654010/ HY57V654020 HY57V644011/ HY57V644021/ HY57V654011/ HY57V654021 I PRELIMINARY DESCRIPTION HY57V644010 8Mbit HY57V644020 4Mbit x 4bank x 4 I/0 , LVTTL
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16Mx4
HY57V644010/
HY57V644020/
HY57V654010/
HY57V654020
HY57V644011/
HY57V644021/
HY57V654011/
HY57V654021
HY57V644010
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Untitled
Abstract: No abstract text available
Text: u i r i l ai n • i " H Y U N D A I 16Mx4 bit Synchronous DRAM Series HY57V644010/ HY57V644020/ HY57V654010/ HY57V654020 HY57V644011/ HY57V644021/ HY57V654011/ HY57V654021 PRELIMINARY DESCRIPTION HY57V644010 8Mbit HY57V644020 4Mbit x 4bank x 4 I/0 , LVTTL
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HY57V644010
HY57V644020
HY57V654010
HY57V654020
HY57V644011
HY57V644021
HY57V654011
HY57V654021
16Mx4
HY57V644010/
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hy57v168010a
Abstract: Y57V164010A hy57v161610a Y57V HY57V641620 HY57V641621
Text: «HYUNDAI 1. TABLE OF CONTENTS TABLE OF CONTENTS In d e x . 2. PRODUCT QUICK REFERENCE GUIDE SD R A M Part N u m b ering.
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16M-bit
1Mx16-bit
Y57V164010A
HY57V168010A
HY57V161610A
7V651610
HY57V651620
HY57V644021
HY57V654021
HY57V648021
Y57V
HY57V641620
HY57V641621
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hy57v168010a
Abstract: HY57V164010 TSOPII HY57V16401OATC hy57v16801
Text: HYUNDAI PRODUCT REFERENCE SDRAM/SGRAM ORDERING INFORMATION 16M-bit SDRAM ORGANIZATION 4M x 4 2M x 8 IM x 16 PART NUMBER SPEED ns FEATURES PACKAGE HY57V16401OATC 10/12/15 2bank, 4K ref., LVTTL 400mil TSOP-II HY57V164010ALTC 10/12/15 2bank, 4K ref., LVTTL, L-part
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16M-bit
HY57V16401OATC
HY57V164010ALTC
HY57V16801
HY57V168010ALTC
HY57V161610ATC
HY57V161610ALTC
64M-bit
HY57V644010TC
HY57V644020TC
hy57v168010a
HY57V164010
TSOPII
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Untitled
Abstract: No abstract text available
Text: HY57V64420HGT 16Mx4-bit, 4K Ref., 4Banks, 3.3V DESCRIPTION The Hynix HY57V64420HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V64420HG is organized as 4banks of 4,194,304x4.
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OCR Scan
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HY57V64420HGT
16Mx4-bit,
HY57V64420HG
864-bit
304x4.
HY57V644020HG
400mil
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HY57V161610TC
Abstract: No abstract text available
Text: Synchronous DRAM PRODUCT 16Mbit 3.3V DESCRIPTION 4M x 4 As of '96.3Q part n o . CLOCK o p e r a t in g PACKAGE FREQUENCY CURRENT OPTION mA.MAX STAftIDBY CURFIfNT* (mA*lWAX) Préchargé Active HY57V164010TC TSOP- I 100/83/66 100/80/75 20 40 HY57V168010TC
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16Mbit
HY57V164010TC
HY57V168010TC
HY57V161610TC
HY57V644010TC
HY57V644020TC
HY57V654010TC
HY57V654020TC
Y57V64401IT
HY57V644/125/100
HY57V161610TC
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