HY57V56820T
Abstract: No abstract text available
Text: HY57V56820 L T 4Banks x 8M x 8Bit Synchronous DRAM DESCRIPTION The HY57V56820T is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V56820 is organized as 4 banks of 8,388,608x8.
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Original
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HY57V56820
HY57V56820T
456bit
608x8.
400mil
54pin
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PDF
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Untitled
Abstract: No abstract text available
Text: HY57V56820T 4Banks x 8M x 8Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V56820 is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V56820 is organized as 4 banks of
|
Original
|
HY57V56820T
HY57V56820
456bit
608x8.
400mil
54pin
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HY57V56820 L T 4Banks x 8M x 8Bit Synchronous DRAM DESCRIPTION The HY57V56820T is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V56820 is organized as 4 banks of 8,388,608x8.
|
Original
|
HY57V56820
HY57V56820T
456bit
608x8.
400mil
54pin
|
PDF
|
HY57V56820
Abstract: No abstract text available
Text: HY57V56820 L T 4Banks x 8M x 8Bit Synchronous DRAM DESCRIPTION The HY57V56820 is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V56820 is organized as 4 banks of 8,388,608x8.
|
Original
|
HY57V56820
456bit
608x8.
400mil
54pin
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HY57V56820 4Banks x 8M x 8Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V56820 is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V56820 is organized as 4 banks of
|
Original
|
HY57V56820
HY57V56820
456bit
608x8.
400mil
54pin
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HY57V56820 4Banks x 8M x 8Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V56820 is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V56820 is organized as 4 banks of
|
Original
|
HY57V56820
HY57V56820
456bit
608x8.
400mil
54pin
|
PDF
|
hy57v56820t-h
Abstract: No abstract text available
Text: HY57V56820 4Banks x 8M x 8Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V56820 is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V56820 is organized as 4 banks of
|
Original
|
HY57V56820
HY57V56820
456bit
608x8.
400mil
54pin
hy57v56820t-h
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PDF
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PC100
Abstract: PC133 54-PIN HYM71V653201
Text: 2 . PRODUCT QUICK REFERENCE X XX XX X X XX X X - X - X X£ HYNIX MEMORY PRODUCT Q U IC K REFERENCE HY XX I : Industrial Temperature E: Extended Temperature SPEED s 200MHz 183MHz 55 6 7 PRODUCT GROUP 57 : SDRAMs PROCESS & POWER SUPPLY : CMOS, 3.3V DENSTTY& REFRESH
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OCR Scan
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200MHz
183MHz
166MHz
143MHz
PC133
125MHz
PC100,
100MHz
PC100
54-PIN
HYM71V653201
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PDF
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PC100
Abstract: 54-PIN
Text: 2 . PR O D U C T Q U IC K REFERENCE PRODUCT QUICK REFERENCE HY XX X XX XX X X XX X X PRO DUCT Q UICK REFERENCE New SDRAM PART NUMBERING XX I : Industrial Tem perature E: Extended Tem perature HY NIX M EM OR Y SPEED PRODUCT G ROUP 57 : SDRAM s PROCESS & PO W ER SUPPLY
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OCR Scan
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183MHz
PC133
125MHz
PC100,
100MHz
M72V32656T8
HYM72V32636T8
HYM72V32756T8
PC100
54-PIN
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PDF
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