HY51C Search Results

64kx4

Abstract: HY51C264-12 strobe w24 64Kx4-Bit
Contextual Info: ▲ HY51C264 64K x4-Bit Dual Port CMOS RAM HYUNDAI SEMICONDUCTOR OCTOBER 1986 DESCRIPTION The Hyundai HY51C264 is high-speed, dual access 262, 144 bit 256K CMOS dynamic random-access memory components. Fabricated with CMOS technology, the HY51C264 offers TURBOMODE

hyundai

Abstract: 536X4
Contextual Info: PRELIMINARY A HY51C464 HYUNDAI SEMICONDUCTOR 65,536x4-Bit CMOS Dynamic RAM AUGUST 1986 The HY51C464 offers a maximum standby current of 100 n A when RASs Vdd—0.5V. During standby i.e. refresh only cycles , the refresh period can be extended to 32 ms to reduce the total current re­

TPC 8406

Abstract: HY51C1000-12 HY51C1000-10 RM1410 W777777 29793 83464 hyundai chip id
Contextual Info: HYUNDÛJ HY51C1000 S E M IC Ü N Ü U U T Ü K lM X 1-Bit CMOS DRAM M131202A-SEP90 DESCRIPTION FEATURES T h e H Y 51C1000 is a high speed, low pow er 1,048,576X1 bit C M O S dynam ic ran d o m a c ­ cess m em ory. F ab rica ted w ith th e H Y U N D A I C M O S process, th e H Y 51C 1000 offers a fast

HYUNDAI i10

Contextual Info: PRELIMINARY HY51C464 HYUNDAI SEMICONDUCTOR 6 5 ,5 3 6 x4-Bit CMOS D ynam ic RAM AUGUST 1986 Oov,cd- The HY51C464 offers a m axim um standby current of 100 ft A w hen RAS ? Vdd—0.5V. During standby i.e. refresh only cycles , the refresh period can be extended to 32 ms to reduce the total current re­

Contextual Info: A £ SEMICONDUCTOR & & Ë g ! H Y 5 lMxi-Bit 1 C 1cmos 0 0dram M131202A-SEP90 DESCRIPTION FEATURES The HY51C1000 is a high speed, low power 1,048,576X1 bit CM OS dynam ic random ac­ cess memory. Fabricated with the HYUNDAI CM OS process, the HY51C1000 offers a fast

HY51C4256

Abstract: block diagram of vu meter HY51C4254-10
Contextual Info: M• ■ HY51C4256 R Hyundai SEMICONDUCTOR A M151201B—APR91 DESCRIPTION FEATURES The HY51C4256 is a high speed, low power 262,144 X 4 CM OS dynamic random access memory. Fabricated with HYUNDAI CMOS technology, HY51C4256 offers a fast page m ode for high data bandw idth, fast usable

Contextual Info: PRELIMINARY / a m h v u n d a i SEMICONDUCTOR HY51C4256/L X DESCRIPTION T h e H Y 5 1 C 4 2 5 6 /L is a h ig h sp eed , low pow er 2 6 2 ,1 4 4 x 4 C M O S d y n a m ic ra n d o m access m em ory. F a b ric a te d w ith H Y U N D A I C M O S tech n o lo g y , H Y 5 1 C 4 2 5 6 /L o ffe rs a fa st p ag e

hy51c4256

Abstract: HY51C4256-10 51c4256 soj16 51C4 HY51C4256-12
Contextual Info: „ H H « y u n d a HY51C4256 i SEMICONDUCTOR A A A M151201B—APR91 DESCRIPTION FEATURES The HY51C4256 is a high speed, low power 262,144 X 4 CMOS dynamic random access memory. Fabricated with HYUNDAI CMOS technology, HY51C4256 offers a fast page mode for high data bandwidth, fast usable

HY51C64-12

Abstract: DYNAMIC RAM 65536 HY51C64L-12 e1986
Contextual Info: s - n o o 0 0 1 8 9 1 m / SEMICONDUCTOR DESCRIPTION The HY51C64 is a high speed 65,536 bit CMOS dynam ic Random Access M emory. Fabricated in CM OS technology, the HY51C64 offers features not provided by NM OS technology-Ripplem ode* fast usable speed, low power, and an average soft error

4b23

Abstract: HY51C256 hyundai 235 moo 42j
Contextual Info: HYUNDAI ELECT RO NI CS Û3 Ü>ËJ 4b750ññ ODDQISI *4 | ~ 467 508 8 HYUNDAI ELEC TR ON ICS 83D 00151 D T-M cr23>-|5 O C TO B ER 1986 D ESC R IPTIO N , The HY51C256L offers a typical standby current as low as 10// A w hen RAS Vdd—0.2V. During stand­ by (i.e. only refresh cycles the refresh period can

Contextual Info: M HY51C1000 HYUNDAI • ■ SEMICONDUCTOR îvixi-Bit t\io s dram M131202B-APR91 DESCRIPTION FEATURES The HY51C1000 is a high speed, low power 1,048,576X1 bit CMOS dynamic random ac­ cess memory. Fabricated with the HYUNDAI CM OS process, the HY51C1000 offers a fast

Contextual Info: HY51C264 HYUNDAI ▲ SEMICONDUCTOR 64K x4-B it Dual Port CMOS RAM OCTOBER 1986 DESCRIPTION FEATURES The Hyundai HY51C264 is high-speed, dual access 262, 144 bit 256K CMOS dynamic random-access memory components. Fabricated with CMOS technology, the HY51C264 offers TURBOMODE

Contextual Info: s -n o y 0 0 1 8 9 1 tfY i ^ j& P R E L IM IN A R Y f t SEMICONDUCTOR HY51C64 65,536X1-Bit CMOS Dynamic RAM FEBRUARY 1986 DESCRIPTION The HY51C64 is a high speed 65,536 bit CMOS dynamic Random Access Memory. Fabricated in CMOS technology, the HY51C64 offers features not

16PIN

Abstract: 51C64H-12 51C64H-8 51C64HL-12 51C64L-12 51C65L-10 51C65L-12 HY51C64-10 HY51C64-12 HY51C64-15
Contextual Info: - 172 — 64K A • m m m % it £ OC TRCY TCAD TAH TRAC max n s) ■ in (n s) CMOS Dynamic 4 7 f y / U f t ■ in (n s) ■in (n s) TP ■ in (n s) TWCY (n s) RAM(65536x1) m « TC'H ■in (n s) TfiWC n in (n s) VDD o r VCC (V) IDD nax (aA) À ID D STANDBY

UAA 190

Abstract: AC613 HY51C
Contextual Info: A ] • ■ H H Y U N D A I SEMICONDUCTOR Y 5 1 C 1 0 0 0 iMxi-œt c m o s dram M131202B-APR91 DESCRIPTION FEATURES T he H Y 51C1000 is a high speed, low pow er 1,048,576X1 bit C M O S dynam ic random a c ­ cess m em ory. F abricated w ith the H Y U N D A I

m514256

Abstract: m514256a M514256AP hy51c4256 HY51C4256-10 20PIN AAA1M104-12 AAA1M204-07 AAA1M204-08 EDI44256C-120
Contextual Info: - 211 IM CMOS X D y n a m i c 4 •; * RA M 2 6 21 4 4 x 4 > 7 ft ü m iäSicH m ä tt £ CC) TRAC max (ns) TRCY rain (ns) TCAD min (ns) TAH nin (ns) TP min (ns) TWCY min (ns) TDH min (ns) TRWC min (ns) V D D or V C C (V) 2 0 P I N A m I DD max (mA) I DD STANDBY

y51c

Abstract: l1048 TA512
Contextual Info: PRELIMINARY J ^ H SEMICONDUCTOR VUNOQJ H Y 5 1M1x uCm 1C M 0O S D0y n a2m jc/r aLm DESCRIPTION FEATURES T h e H Y 5 1 C 1 0 0 2 /L is h ig h sp e ed , low pow er 1,048,576 x 1 bit C M O S d y n a m ic ra n d o m access m em ory. F ab ricated w ith th e H Y U N D A I C M O S

Contextual Info: PRELIMINARY ▲ £ £ £ £ & H Y 5256K 1 xÇ4-Bit4CMOS 2 5Dynamic 8 /RAM L DESCRIPTION FEATURES T h e H Y 5 1 C 4 2 5 8 /L is a h ig h speed, low pow er 2 6 2 ,1 4 4 x 4 C M O S d y n a m ic ra n d o m access m em ory. F a b ric a te d w ith H Y U N D A I C M O S

HY51C256-12

Abstract: 51c256 GM71C256-80 GM71C256-10 GoldStar 51C256H-12 51C256H-20 51C256HL-15 51C256HL-20 51C256L-15
Contextual Info: - 256K m & ít £ * fc> TRAC max ns TRCY min (ns) CMOS D y n a m ic 'i -y ^ y y n\i TCAD »in (ns) TAH TP nin (ns) •in (ns) TWCY nin (ns) R A M (2 6 2 1 4 4 x 1) M m TDH TRWC ■in (ns) ain (ns) V D D or V C C (V) I DD max (b A) 16 P I N A ( VIL ■ax

HY51C1002-10

Abstract: km41c1000c-6 HY531000-60 511000 HM511002-10 HM511002-12 HM511002-15 HM511002P-12 HM511002P-15 HM571000JP-35R
Contextual Info: - 202 - IM CMOS X m £ í± £ iä g iE ia PC TRAC max ns) TRCY min (ns) D y n a m i c RAM (10 4 85 7 6 X 1 ) 4 V f - y 7 ’ ft fé TCAD T A H T P min ! min min (ns) (ns) i (ns¡ TWCY min (ns) M TDH nin (ns) TRWC V D D or VC C (ns) (V) 18 P I N IDD max