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    51C256 Price and Stock

    MYIR Tech Limited MYC-YA151C-256N256D-65-C-T

    System-On-Modules - SOM 256MB DDR3, 256MB Nand, commercial
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    Mouser Electronics MYC-YA151C-256N256D-65-C-T 59
    • 1 $22.07
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    • 100 $22.07
    • 1000 $22.07
    • 10000 $22.07
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    MYIR Tech Limited MYC-YA151C-256N256D-65-I-T

    System-On-Modules - SOM 256MB DDR3, 256MB Nand, industrial
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics MYC-YA151C-256N256D-65-I-T
    • 1 $22.5
    • 10 $22.5
    • 100 $22.5
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    Vishay Intertechnologies RLR07C3014FSB14

    Metal Film Resistors - Through Hole 3.01M OHM 1% ERL-07
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    TTI RLR07C3014FSB14 Box 400 100
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    • 100 $3.92
    • 1000 $3.72
    • 10000 $3.72
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    OKI Electric Industry Co Ltd M51C25680

    Electronic Component
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    ComSIT USA M51C25680 18
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    Chip 1 Exchange M51C25680 100
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    51C256 Datasheets (50)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    51C256H Intel High Performance Ripplemode CHMOS Dynamic RAM Original PDF
    51C256H Intel High Performance Ripplemode CHMOS Dynamic RAM Original PDF
    51C256H-10 Intel High Performance Ripplemode CHMOS Dynamic RAM Original PDF
    51C256H-10 Intel HIGH PERFORMANCE RIPPLEMODE 256K x 1 CHMOS DYNAMIC RAM Scan PDF
    51C256H-11 Intel HIGH PERFORMANCE RIPPLEMODE 256K x 1 CHMOS DYNAMIC RAM Scan PDF
    51C256H-12 Intel High Performance Ripplemode CHMOS Dynamic RAM Original PDF
    51C256H-12 Intel High Performance Ripplemode CHMOS Dynamic RAM Original PDF
    51C256H-12 Intel HIGH PERFORMANCE RIPPLEMODETM 256K x 1 CHMOS DYNAMIC RAM Scan PDF
    51C256H-12 Intel HIGH PERFORMANCE RIPPLEMODE 256K x 1 CHMOS DYNAMIC RAM Scan PDF
    51C256H-12 Intel HIGH PERFORMANCE RIPPLEMODE 256K x 1 CHMOS DYNAMIC RAM Scan PDF
    51C256H-12 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    51C256H-15 Intel High Performance Ripplemode CHMOS Dynamic RAM Original PDF
    51C256H-15 Intel High Performance Ripplemode CHMOS Dynamic RAM Original PDF
    51C256H-15 Intel HIGH PERFORMANCE RIPPLEMODE 256K x 1 CHMOS DYNAMIC RAM Scan PDF
    51C256H-15 Intel HIGH PERFORMANCE RIPPLEMODETM 256K x 1 CHMOS DYNAMIC RAM Scan PDF
    51C256H-15 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    51C256H-20 Intel High Performance Ripplemode CHMOS Dynamic RAM Original PDF
    51C256H-20 Intel High Performance Ripplemode CHMOS Dynamic RAM Original PDF
    51C256H-20 Intel HIGH PERFORMANCE RIPPLEMODETM 256K x 1 CHMOS DYNAMIC RAM Scan PDF
    51C256H-20 Intel HIGH PERFORMANCE RIPPLEMODE 256K x 1 CHMOS DYNAMIC RAM Scan PDF

    51C256 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: ¡ n t I» P ftE U R fl 11 " H ì1 51C256H HIGH PERFORMANCE RIPPLEMODE 256Kx 1 CHMOS DYNAMIC RAM 51C256H-10t 51C256H-12 51C256H-15 51C256H-20 100 120 150 200 Maximum Column Address Accsss Tims (ns 40 50 65 85 Ripplemode Cycle Tims (ns) 50 60 75 95 Maximum Access Tims (ns)


    OCR Scan     		51C256H 256Kx 51C256H-10t 51C256H-12 51C256H-15 51C256H-20 tRcB170 51C256H 144x1 PDF

    Untitled

    Abstract: No abstract text available
    Text: in te i’ 51C256L LOW POWER 256K X 1 CHMOS DYNAMIC RAM 51C256L-15 51C256L-20 Maximum Access Time ns 150 200 Maximum CHMOS Standby Current (mA) 0.1 0.1 • Low Power Data Retention ■ TTL and HCT Compatible — Standby current, CHMOS — 100 ¡¡A (max.)


    OCR Scan     		51C256L 51C256L-15 51C256L-20 51C256L S1C256L PDF

    Untitled

    Abstract: No abstract text available
    Text: in te i’ 51C256HL HIGH PERFORMANCE LOW POWER RIPPLEMODE 256K X 1 CHMOS DYNAMIC RAM 51C256HL-15 51C256HL-20 Maximum Access Time ns 150 200 Maximum Column Address Access Time (ns) 70 90 Maximum CHtyOS Standby Current (mA) 0.1 0.1 Ripplemode Operation


    OCR Scan     		51C256HL 51C256HL-15 51C256HL-20 PDF

    Untitled

    Abstract: No abstract text available
    Text: in te T 51C256HL HIGH PERFORMANCE LOW POWER RIPPLEMODE 256K X 1 CHMOS DYNAMIC RAM 51C256HL-15 51C256HL-20 Maximum Access Time ns 150 200 Maximum Column Address Access Time (ns) 70 90 Maximum CHMOS Standby Current (mA) 0.1 0.1 Ripplemode Operation Low Power Data Retention


    OCR Scan     		51C256HL 51C256HL-15 51C256HL-20 51C256HL PDF

    intel 2102 Static RAM

    Abstract: 51C256HL 51C256HL-15 51C256HL-20 TCAM
    Text: in te i' 51C256HL HIGH PERFORMANCE LOW POWER RIPPLEMODE 256K X 1 CHMOS DYNAMIC RAM 51C256HL-15 51C256HL-20 Maximum Access Time ns 150 200 Maximum Column Address Access Time (ns) 70 90 Maximum CHtyOS Standby Current (mA) 0.1 0.1 Ripplemode Operation • Low Power Data Retention


    OCR Scan     		51C256HL 51C256HL-15 51C256HL-20 intel 2102 Static RAM 51C256HL-20 TCAM PDF

    51C256L

    Abstract: 51C256L-12 51C256L-15 51C256L-20 28003* intel
    Text: [P iF S iiU B lO tM Ä ß W in te T 51C256L LOW POWER 256K x 1 CHMOS DYNAMIC RAM Maximum Access Time ns Maximum CHMOS Standby Current (mA) • Low Power Data Retention - Standby current, CHMOS — 1 0 0 /¿A (max.) - Refresh period, RAS-Only — 32ms (max.)


    OCR Scan     		51C256L 51C256L-12 51C256L-15 51C256L-20 51C256L-20 28003* intel PDF

    A1803

    Abstract: No abstract text available
    Text: in t ^ l p,aiL 51C256H HIGH PERFORMANCE RIPPLEMODETM 256K X 1 CHMOS DYNAMIC RAM 51C256H-12t Maximum Access Time ns 120 Maximum Column Address Access Time (ns) Ripplemode Cycle Time (ns) 55 65 Ripplemode Operation 51C256H-15 150 70 B0 21C256H-20 209 90 100


    OCR Scan     		51C256H 51C256H-12t 51C256H-15 21C256H-20 51C256H Fabric1C256H A1803 A1803 PDF

    Untitled

    Abstract: No abstract text available
    Text: int ! 51C256L LOW POWER 256K X 1 CHMOS DYNAMIC RAM 51C256L-15 51C25Ì6L-20 Maximum Access Time ns 150 200 Maximum CHMOS Standby Current (mA) 0.1 0.1 • Low Power Data Retention ■ TTL and HCT Compatible — Standby current, CHMOS — 100 jxA (max.) — Refresh period, RAS-Only — 32 ms (max)


    OCR Scan     		51C256L 51C256L-15 51C25Ã 6L-20 51C256L PDF

    28003* intel

    Abstract: 51C256L 51C256L-15 51C256L-20 2800-310
    Text: in te i 51C256L LOW POWER 256K X 1 CHMOS DYNAMIC RAM 51C256L-15 51C256L-20 Maximum Access Time ns 150 200 Maximum CHMOS Standby Current (mA) 0.1 0.1 Low Power Data Retention • TTL and HCT Compatible — Standb y current, C HM O S — 100 /¿A (m ax.) — R efresh period, R AS-O nly — 32 m s (m ax)


    OCR Scan     		51C256L 51C256L-15 51C256L-20 51C256L S1C256L 28003* intel 51C256L-20 2800-310 PDF

    B1GP

    Abstract: 51C256H 51C256H-10 51C256H-12 51C256H-15 51C256H-20 28003* intel tpC-170
    Text: i n t ^ r P R E U M M Â Ifflf " f l 1 5 1 C 2 5 6 H HIGH PERFORMANCE RIPPLEMODE 256K x 1 CHMOS DYNAMIC RAM Maximum Accesa Time ns Maximum Column Address Access Time (ns) Ripplemode Cycle Time (ne) 51C256H-10f 51C256H-12 51C256H-15 51C256H-20 100 120


    OCR Scan     		51C256H 51C256H-10f 51C256H-12 51C256H-15 51C256H-20 tpC-170 51C256H 144x1 B1GP 51C256H-10 51C256H-20 28003* intel PDF

    Untitled

    Abstract: No abstract text available
    Text: in té T 51C256L LOW POWER 256K x 1 CHMOS DYNAMIC RAM 51C256L-12 Maximum Access Time ns Maximum CHMOS Standby Current (mA) 120 0.1 • Low Power Data Retention - Standby current, CHMOS — 100 nA (max.) - Refresh period, RAS-Only — 32 ms (max.) - Data Retention Current — 230 ¡¡A


    OCR Scan     		51C256L 51C256L-12 51C256L-20 51C256L-15 51C256L PDF

    20 led VU meter

    Abstract: 51C256HL 51C256HL-15 51C256HL-20 28003* intel
    Text: in te i’ 51C256HL HIGH PERFORMANCE LOW POWER RIPPLEMODE 256K X 1 CHMOS DYNAMIC RAM 51C256HL-15 51C256HL-20 Maximum Access Time ns 150 200 Maximum Column Address Access Time (ns) 70 90 Maximum CHMOS Standby Current (mA) 0.1 0.1 Ripplemode Operation Low Power Data Retention


    OCR Scan     		51C256HL 51C256HL-15 51C256HL-20 20 led VU meter 51C256HL-20 28003* intel PDF

    Untitled

    Abstract: No abstract text available
    Text: in t e i 51C256H HIGH PERFORMANCE RIPPLEMODETM 256K X 1 CHMOS DYNAMIC RAM 51C256H-12t 51C256H-15 21C256H-20 Maximum Access Time ns 120 150 200 Maximum Column Address Access Time (ns) 55 70 90 Ripplemode Cycle Time (ns) 65 80 100 Ripplemode Operation Fast “ Usable Speed”


    OCR Scan     		51C256H 51C256H-12t 51C256H-15 21C256H-20 51C256H PDF

    Untitled

    Abstract: No abstract text available
    Text: U M M h m in te i 51C256H HIGH PERFORMANCE RIPPLEMODE 256Kx 1 CHMOS DYNAMIC RAM Maximum Access Time ns Maximum Column Address Access Time (ns) Rlppiemode Cycle Time (ns) 51C256H-10f 51C256H-12 51C256H-15 51C256H-20 100 120 150 200 40 50 65 85 50 60 75


    OCR Scan     		51C256H 256Kx 51C256H-10f 51C256H-12 51C256H-15 51C256H-20 51C256H PDF

    21C256

    Abstract: 51C256H 51C256H-12 51C256H-15 51C256H-20
    Text: intei* 51C 256H HIGH PERFO RM ANCE RIPPLEM O D E 256K X 1 CHM OS D YN A M IC RAM Maximum Access Time ns Maximum Column Address Access Time (ns) Ripplemode Cycle Time (ns) 51C256K-12t 120 51C256H-15 150 55 70 80 65 21C256H-20 200 90 100 Ripplemode Operation


    OCR Scan     		51C256H 51C256K-12t 51C256H-15 21C256H-20 51C256H A1A03 21C256 51C256H-12 51C256H-20 PDF

    51C256L

    Abstract: 51C256L-15 51C256L-20
    Text: in te i 51C256L LOW POWER 256K X 1 CHMOS DYNAMIC RAM 51C256L-15 51C29Î6L-20 Maximum Access Tim e ns 150 200 Maximum CHMOS Standby Current (mA) 0.1 0.1 • Low Power Data Retention ■ TTL and HCT Com patible — Standby current, CHMOS — 100 jxA (max.)


    OCR Scan     		51C256L 51C256L-15 51C29Ã 6L-20 51C256L 51C256L-20 PDF

    21C256

    Abstract: 51C256H 51C256H-12 51C256H-15 51C256H-20 28003* intel
    Text: in t e i E 51C 256H HIGH PERFO RM AN CE R I P P L E M O D E T M 256K X 1 CH M O S D YN A M IC RAM 51C256H-12t 51C256H-15 120 150 70 80 Maximum Access Time ns Maximum Column Address Access Time (ns) 55 Ripplemode Cycle Time (ns) 65 21C256H-20 200 90 100 Ripplemode Operation


    OCR Scan     		51C256H 51C256H-12t 51C256H-15 21C256H-20 51C256H 21C256 51C256H-12 51C256H-20 28003* intel PDF

    A1603

    Abstract: 28003* intel C1101 51C256H 51C256H-10 51C256H-12 51C256H-15 51C256H-20
    Text: P R E u m m ^ m in t e i 51C256H HIGH PERFORMANCE RIPPLEMODE 256K x 1 CHMOS DYNAMIC RAM Maximum Access Time ns Maximum Column Address Access Tims (ns) Ripplemode Cycle Tims (ns) 51C256H-10+ 51C256H-12 51C256H-15 51C256H-20 100 120 150 200 40 50 65 85


    OCR Scan     		51C256H 51C256H-10+ 51C256H-12 51C256H-15 51C256H-20 51C256H 144x1 A1603 28003* intel C1101 51C256H-10 51C256H-20 PDF

    iw 1688

    Abstract: 57C256 51C256L 51C256L-12 51C256L-15 51C256L-20 28003* intel
    Text: P E E L m m ^ m ir it e T 51C256L LOW POWER 256K x 1 CHMOS DYNAMIC RAM 51C256L-12 51C256L-15 51C256L-20 120 150 200 0.1 0.1 0.1 Maximum Access Time ns Maximum CHMOS Standby Current (mA) Low Operating Current — 50 mA (max.) • Low Power Data Retention


    OCR Scan     		51C256L 51C256L-12 51C256L-15 51C256L-20 51C256L iw 1688 57C256 51C256L-20 28003* intel PDF

    KM41C256-8

    Abstract: HM51256P-10 km41c256 HM51256P-12 HM51256LP-10 HM51256P-15 KM41C256-10 HM51256LCP-10 MB81C258-10 HM51256CP-15
    Text: - 2 5 6 K X i m & tt £ OC TRAC max ns) CMOS • ; + TRCY min (ns) TCAD (ns) TAH min (ns) > ? TF mir (ns) D y n a m i c RAM íf li TWCY min (ns) TDH (ns) TRWC min (ns) V D D or V C C (V) 16 P I N ( 2 6 2 1 4 4 X 1 M A M 1 DD max (mA) ti [+typ] 5 12 5 8 ÍÜ


    OCR Scan     		262144x1 HM51Z5GCP-10 HM51Z56CP-12 HM51256CP-15 HM51256L0-70 V53C258-12 V53C258-12A V53C258-70 V53C258-70A V53C258-80 KM41C256-8 HM51256P-10 km41c256 HM51256P-12 HM51256LP-10 HM51256P-15 KM41C256-10 HM51256LCP-10 MB81C258-10 PDF

    MSM51C256A

    Abstract: MSC2321B-70YS18
    Text: O K I Semiconductor MSC2321 B-xxYSI 8/DS18 524,288-Word by 36-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI M SC2321B-xxYS18/DS18 is a fully decoded 524,288-w o rd x 36-bit CMOS D ynam ic R andom Access M em ory M odule com posed of sixteen 1-Mb DRAMs in SOJ M SM 514256B packages an d eight


    OCR Scan     		MSC2321 8/DS18 288-Word 36-Bit MSC2321B-xxYS18/DS18 MSM514256B) 256-Kb MSM51C256A) MSM51C256A MSC2321B-70YS18 PDF

    FZJ 131

    Abstract: MSM51C256 MSM51C256-10 MSM51C256-12 MSM51C256-8 MSM51C256RS dynamic ram binary cell
    Text: O K I semiconductor 51C256RS/JS • 7= - a .* - A S " * 262, 144 W ORD X 1-BITS DYNAM IC RAM GENERAL DESCRIPTION The 51C256 is a new generation dynamic RAM organized as 262,144 words by 1 bit. The technology used to fabricate the 51C256 is OKI's CMOS silicon gate process technology. The


    OCR Scan     		MSM51C256RS/JS MSM51C256 DIP/18 MSM51C256-8 MSM51C256-10 MSM51C256-12 FZJ 131 MSM51C256RS dynamic ram binary cell PDF

    Untitled

    Abstract: No abstract text available
    Text: O K I semiconductor 51C256A 262,144-Word x 1-Bit DYNAMIC RAM G EN E R A L DESCRIPTION T h e M S M 5 1 C 2 5 6 A is a new generation dynam ic R A M org an ized a s 262,144-w ord x 1-bit. T h e technology u sed to fabricate the M S M 5 1 C 2 5 6 A is O K I’s C O M S silicon gate p ro c e ss tech ­


    OCR Scan     		MSM51C256A 144-Word 144-w 51C256A-7lid MSM51C256A PDF

    41C1000

    Abstract: fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b 41c464 hn62324 M7202A
    Text: MEM ORY ICs FUNCTION GUIDE 3. C R O S S REFERENCE GUIDE 3.1 DRAM Density Org. Samsung Mode Toshiba Hitachi Fujitsu H M 51 256 M B 81256 NEC Oki 64K X 1 Page K M 416 4 25 6 K X 1 F. Page KM 41C256 TC 51256 Nibble KM 41C257 TC51257 S. C olu m n KM 41C258 TC 51258


    OCR Scan     		41C256 41C257 41C258 41C464 41C466 41C1000 44C256 44C258 44C1002 TC51257 fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b hn62324 M7202A PDF