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Catalog Datasheet	MFG & Type	PDF	Document Tags
HY5117400B Abstract: HY5116400B HY5117400 4Mx4 DRAM Text: HY5117400B,HY5116400B 4Mx4, Fast Page mode DESCRIPTION This family is a 16M bit dynamic RAM organized 4,194,304 x 4-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this	Original	PDF	HY5117400B HY5116400B HY5116400B HY5117400 4Mx4 DRAM
HY5116400BT Abstract: No abstract text available Text: -HYUNDAI • HY5117400B, HY5116400B 4Mx4, F ait Page mode DESCRIPTION This family is a 16M bit dynamic RAM organized 4,194,304 x 4-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mods which is useful for the read operation. The circuit and process design allow this	OCR Scan	PDF	HY5117400B, HY5116400B A0-A11) HY5116400BT
AUO-PL321.60 Abstract: HY51V18164B HY514264 HY514260 Text: -HYUNDAI QUICK REFERENCE GUIDE DRAM ORDERING INFORMATION ORGANIZATION 1M bit 1Mx1 PART NUMBER HY531000AS HY531000ALS HY531000AJ HY531000ALJ SPEED(ns) 60/70/80 60/70/80 60/70/80 60/70/80 FEATURES F/P F/P, L-part F/P F/P, L-part PACKAGE 1Spin PDIP 18pin PDIP	OCR Scan	PDF	HY531000AS HY531000ALS HY531000AJ HY531000ALJ HY534256AS HY534256ALS HY534256AJ HY534256ALJ HY512260JC HY512260LJC AUO-PL321.60 HY51V18164B HY514264 HY514260
HY5117400BT Abstract: HY5117400B Text: HY5117400B, HY5116400B -HYUNDAI 4M X 4-bit CMOS DRAM DESCRIPTION ORDERING INFORMATION This family is a 16M bit dynamic RAM organized 4,194,304 x 4-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode offers high speed random access of memory cells within the same row.	OCR Scan	PDF	HY5117400B, HY5116400B HY5117400BJ HY5117400BSLJ HY5117400BT HY5117400BSLT HY5116400BJ HY5116400BSLJ HY5116400BT HY5116400BSLT HY5117400B
Untitled Abstract: No abstract text available Text: “H Y U H DAI HY5116400B Series 4M X 4-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY5116400B is the new generation and fast dynam ic RAM organized 4,194,304 x 4-bit. T he HY5116400B utilizes Hyundai’s CM OS silicon gate process technology as well as advanced circuit techniques to provide wide	OCR Scan	PDF	HY5116400B HY5116400B logic300 1AD42-00-MAY95 Mb750fifi 000MS3b HY5116400BSLJ
hy5116400b Abstract: OS136 CK37 Text: “H Y U N D A I H Y 5 1 1 6 4 0 0 B S e r ie s 4M X 4-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY5116400B is the new generation and fast dynam ic RAM organized 4,194,304 x 4-bit. The HY5116400B utilizes Hyundai's CM OS silicon gate process technology as well as advanced circuit techniques to provide wide	OCR Scan	PDF	HY5116400B 1AD42-00-MAY95 HY5116400BJ HY5116400BSLJ HY5116400BT HY5116400BSLT HY5116400BR OS136 CK37
HY51V18164 Abstract: HY5118164 HY514260 HY51V65400 HY51V17804CJ Text: «HYUNDAI DRAM ORDERING INFORMATION ORGANIZATION 1M bit 256Kx4 2M bit (256x8) 2M bit (128Kx16) 4M bit (4Mx1) 4M bit (1 Mx4) Note : FP PART NUMBER HY534256AJ HY534256ALJ HY512800J HY512800LJ HY512800SLJ HY512264JC HY512264LJC HY512264SLJC HY512264TC HY512264LTC	OCR Scan	PDF	256Kx4) 256x8) 128Kx16) HY534256AJ HY534256ALJ HY512800J HY512800LJ HY512800SLJ HY512264JC HY512264LJC HY51V18164 HY5118164 HY514260 HY51V65400 HY51V17804CJ