AUO-PL321.60
Abstract: HY51V18164B HY514264 HY514260
Text: -HYUNDAI QUICK REFERENCE GUIDE DRAM ORDERING INFORMATION ORGANIZATION 1M bit 1Mx1 PART NUMBER HY531000AS HY531000ALS HY531000AJ HY531000ALJ SPEED(ns) 60/70/80 60/70/80 60/70/80 60/70/80 FEATURES F/P F/P, L-part F/P F/P, L-part PACKAGE 1Spin PDIP 18pin PDIP
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HY531000AS
HY531000ALS
HY531000AJ
HY531000ALJ
HY534256AS
HY534256ALS
HY534256AJ
HY534256ALJ
HY512260JC
HY512260LJC
AUO-PL321.60
HY51V18164B
HY514264
HY514260
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Untitled
Abstract: No abstract text available
Text: “H Y U H DAI HY5116400B Series 4M X 4-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY5116400B is the new generation and fast dynam ic RAM organized 4,194,304 x 4-bit. T he HY5116400B utilizes Hyundai’s CM OS silicon gate process technology as well as advanced circuit techniques to provide wide
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HY5116400B
HY5116400B
logic300
1AD42-00-MAY95
Mb750fifi
000MS3b
HY5116400BSLJ
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hy5116400b
Abstract: OS136 CK37
Text: “H Y U N D A I H Y 5 1 1 6 4 0 0 B S e r ie s 4M X 4-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY5116400B is the new generation and fast dynam ic RAM organized 4,194,304 x 4-bit. The HY5116400B utilizes Hyundai's CM OS silicon gate process technology as well as advanced circuit techniques to provide wide
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OCR Scan
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HY5116400B
1AD42-00-MAY95
HY5116400BJ
HY5116400BSLJ
HY5116400BT
HY5116400BSLT
HY5116400BR
OS136
CK37
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HY51V18164
Abstract: HY5118164 HY514260 HY51V65400 HY51V17804CJ
Text: «HYUNDAI DRAM ORDERING INFORMATION ORGANIZATION 1M bit 256Kx4 2M bit (256x8) 2M bit (128Kx16) 4M bit (4Mx1) 4M bit (1 Mx4) Note : FP PART NUMBER HY534256AJ HY534256ALJ HY512800J HY512800LJ HY512800SLJ HY512264JC HY512264LJC HY512264SLJC HY512264TC HY512264LTC
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256Kx4)
256x8)
128Kx16)
HY534256AJ
HY534256ALJ
HY512800J
HY512800LJ
HY512800SLJ
HY512264JC
HY512264LJC
HY51V18164
HY5118164
HY514260
HY51V65400
HY51V17804CJ
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