HMF06 Search Results

Contextual Info: HARRIS H li S E M I C O N D U C T O R 4bE D • 43022^ 00D0213 T ■HMS 1 = 3 1 -3 0 SI HARRIS H M F -0 6 14 0 200 Gain Optimized GaAs FET 2-14 GHz PRODUCT DATA Features * +11.5 dB MAG with +19 dBm Associated Output Power at 8 GHz * Chip Devices are Selected from

Contextual Info: HARRIS nu S E M I C O N D U C T O R MbE D • 4 3 0 2 2 ^ ^ O D Q O l b ^ T ■ HMS " F g j H A R R IS PRODUCT DATA 5 \ '^ HMF-06300 Gain Optimized Low Current GaAs FET 2-12 GHz Features • High Transconductance, especially for Feedback Amplifier Designs

HMF-06000

Abstract: HMF-06020 HMF06 HMF0600
Contextual Info: 2] HARRIS HMF-06020 Power Optimized G aAs FET 2-14 GHz PRODUCT DATA Features • +24.5 dBm Output Power with 7.5 dB Associated Gain at 8 GHz • Chip Devices are Selected from Standard M ilitary Grade Wafers • Power Optimized Design Provides High Power-Added Efficiency

Contextual Info: HA RR IS HU S E M I C O N D U C T O R HBOSSbT 4bE D 0 0 0 0 2 0 e ? • T -3 » -a 5 [g HARRIS H M F -0 6 110 -1 0 0 Gain Optimized GaAs FET 2-14 GHz PRODUCT DATA Features • 10 dB MAG with +17 dBm Associated Output Power at 8 GHz Chip Devices are Selected from

Contextual Info: HARRI S Hü S E M I C O N D U C T O R HbE D • 4 3 G 2 2 b tì G 0 0 0 Z 1 7 b ■ T -3 1 -3 -S H M F-06310 g0 H A R R IS Gain Optimized Low Current GaAs FET 2-12 G H z PRODUCT DATA Features * 10 dB MAG with +15.5 dBm Associated Power at 8 GHz and only 40 mA Ids

HMF06100

Abstract: "Harris microwave"
Contextual Info: SAMSUNG ELECTRONICS bGE INC £0 HARRIS H 7 % 4 1 4 2 0011833 bfl2 D M F - 6 1 -1 0 0 -2 0 0 Gain Optimized GaAs FET 2-20 GHz PRODUCT DATA Features • Two RF Performance Selections for S/X Band and Ku Band Applications Large Cross Section Ti/Pt/Au Gates Enhance Durability and Reliability

tip 1471 transistor

Abstract: ic 307 g
Contextual Info: HARRIS m SEMICONDUCTOR T7 D E^ B O a St.'ì 0GDGD13 1 fi r - 3 / - * 5 HMF-0610 2—20 GHz 12.5 dB GAIN 150 mW HIGH GAIN POWER GaAs FET PRODUCT DATA JANUARY 1987 HARRIS MICROWAVE SEMICONDUCTOR FEATURES DEVICE OUTLINE □ □ □ □ □ □ □ 6 dB High Gain Typical @ 18 GHz

VP 1176

Abstract: HMF-06100-200 HMF06100-200
Contextual Info: SAMSUNG ELECTRONICS INC SI HARRIS bOE D 7=^4142 D011A71 4 ti b HM F-06140 -200 Gain Optimized GaAs FET 2-14 GHz PRODUCT DATA Features * +11.5 dB MAG with +19 dBm Associated Output Power at 8 GHz Chip Devices are Selected from Standard Military Grade Wafers

HMF06300

Contextual Info: SAMSUNG ELECTRONICS INC S HARRIS PRODUCT DATA bOE » • TTbMlME Qailfl37 226 ■ ■ SMGK HMF-06300 Gain Optimized Low Current GaAs FET 2-12 GHz Features * High Transconductance, especially for Feedback Amplifier Designs * Large Cross Section Ti/Pt/Au Gates

HMF-0620

Abstract: HMF0620 hmf-062
Contextual Info: HARRIS nid SEMICON DU C TOR ^3U Z2 69 HARRIS M W SE MI CO N DU CT OR r T7 DE 1430521^=] 97D 00015 HMF-0620 D t —- 0DDDQ1S &/ >- S s .'$ — 2 - 1 4 GHz HIGH GAIN HIGH TRANSCONDUCTANCE HIGH GAIN GoAs FET PRODUCT DATA _ NOVEMBER 1987 j

Contextual Info: SAMSUNG ELECTRONICS INC HARRIS T'ibMlMS OGllflbñ TT1 bDE D HMF-061 10 -1 0 0 Gain Optimized GaAs FET 2-14 GHz PRODUCT DATA Features * 10 dB MAG with +17 dBm Associated Output Power at 8 GHz Chip Devices are Selected from Standard Military Grade Wafers

cp4071

Abstract: data sheet IC 7408 2N4891 IC 7408 MDA970A2 MDA2500 1854-0071 MDA2502 2N4342 IC TTL 7400
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154

HMF-06000

Abstract: HMF-0600
Contextual Info: HA RR IS MU S E M I C O N D U C T O R J*j HARRIS tbE I • M3052Î.1 OOOOlfal S « H Î 1 S HMF-06000 Power Optimized GaAs FET 2-18 GHz PRODUCT DATA Features * +24.5 dBm Output Power with 8 dB Associated Gain at 8 GHz * Large Cross Section Tl/Pt/Au Gates Enhance Durability and Reliability

hmf-06020

Abstract: HMF-0600 HMF0600
Contextual Info: HARRIS flU S E M I C O N D U C T O R 4hE D • 4 3 0 2 S b cì D 0 0 0 2 0 S T ■ HMS T - 3 l~ 2 £ > HMF-06020 g HARRIS Power Optimized GaAs FET 2 -1 4 G Hz PRODUCT DATA Features • +24.5 dBm Output Power with 7.5 dB Associated Gain at 8 GHz * Chip Devices are Selected from

HMF-06100

Abstract: HMF06100
Contextual Info: HARRIS Mill S E M I C O N D U C T O R 4bE D • 43022^ OGGOlbS 2 ■ HMS -1 0 0 2 J H A R R I S H M F - 6 1 -200 Gain Optimized GaAs FET 2-20 GHz PRODUCT DATA Features • Two RF Performance Selections for SIX Band and Ku Band Applications * Large Cross Section Ti/Pt/Au Gates

c5088 transistor

Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154

HMF-0600

Abstract: HMF0600 transistor b 1138 906000
Contextual Info: H ARRIS T? Mid S E M I C O N D U C T O R 4302269 HARRIS MW SEMICONDUCTOR — 97D DFJuBOaSfc.^ 00027 HMF-0600 POWER GaAs FET D OD OD H? D T ' 3 / *«55 1 —v 2—18 GHz 250 mW 8.0 dB Gain Fèbruaiy 1984 PRODUCT DATA J HARRIS MICROWAVE SEMICONDUCTOR DEVICE.OUTLINE

F0631

Abstract: samsung 1019
Contextual Info: SAMSUNG ELECTRONICS INC HARRIS bOE Ï 7 ^ 4 1 4 2 0011074 ITS H M F -06310 Gain Optimized Low Current G aAs FET 2-12 GHz PRODUCT DATA Features * 10 dB MAG with +15.5 dBm Associated Power at 8 GHz and only 40 mA Ids Chip Devices are Selected from Standard Military Grade Wafers

HMF-0600

Abstract: HMF-06000
Contextual Info: S A M S U N G E L E C T R O N I C S INC 33 HARRIS bDE J> 7^4142 0G11Ô3D T73 HMF-06000 Power Optimized GaAs FET 2-18 GHz PRODUCT DATA Features * +24.5 dBm Output Power with 8 dB Associated Gain at 8 GHz Large Cross Section Ti/Pt/Au Gates Enhance Durability and Reliability