HMF06100 Search Results

Contextual Info: HARRIS H li S E M I C O N D U C T O R 4bE D • 43022^ 00D0213 T ■HMS 1 = 3 1 -3 0 SI HARRIS H M F -0 6 14 0 200 Gain Optimized GaAs FET 2-14 GHz PRODUCT DATA Features * +11.5 dB MAG with +19 dBm Associated Output Power at 8 GHz * Chip Devices are Selected from

Contextual Info: HA RR IS HU S E M I C O N D U C T O R HBOSSbT 4bE D 0 0 0 0 2 0 e ? • T -3 » -a 5 [g HARRIS H M F -0 6 110 -1 0 0 Gain Optimized GaAs FET 2-14 GHz PRODUCT DATA Features • 10 dB MAG with +17 dBm Associated Output Power at 8 GHz Chip Devices are Selected from

HMF06100

Abstract: "Harris microwave"
Contextual Info: SAMSUNG ELECTRONICS bGE INC £0 HARRIS H 7 % 4 1 4 2 0011833 bfl2 D M F - 6 1 -1 0 0 -2 0 0 Gain Optimized GaAs FET 2-20 GHz PRODUCT DATA Features • Two RF Performance Selections for S/X Band and Ku Band Applications Large Cross Section Ti/Pt/Au Gates Enhance Durability and Reliability

VP 1176

Abstract: HMF-06100-200 HMF06100-200
Contextual Info: SAMSUNG ELECTRONICS INC SI HARRIS bOE D 7=^4142 D011A71 4 ti b HM F-06140 -200 Gain Optimized GaAs FET 2-14 GHz PRODUCT DATA Features * +11.5 dB MAG with +19 dBm Associated Output Power at 8 GHz Chip Devices are Selected from Standard Military Grade Wafers

Contextual Info: SAMSUNG ELECTRONICS INC HARRIS T'ibMlMS OGllflbñ TT1 bDE D HMF-061 10 -1 0 0 Gain Optimized GaAs FET 2-14 GHz PRODUCT DATA Features * 10 dB MAG with +17 dBm Associated Output Power at 8 GHz Chip Devices are Selected from Standard Military Grade Wafers

HMF-06100

Abstract: HMF06100
Contextual Info: HARRIS Mill S E M I C O N D U C T O R 4bE D • 43022^ OGGOlbS 2 ■ HMS -1 0 0 2 J H A R R I S H M F - 6 1 -200 Gain Optimized GaAs FET 2-20 GHz PRODUCT DATA Features • Two RF Performance Selections for SIX Band and Ku Band Applications * Large Cross Section Ti/Pt/Au Gates