HM5225165BTT Search Results

Hitachi DSA00176

Contextual Info: HB52F328DC-75B/75BL 256 MB Unbuffered SDRAM S.O.DIMM 32-Mword x 64-bit, 133 MHz Memory Bus, 2-Bank Module 8 pcs of 16 M × 16 components PC133 SDRAM ADJ-203-555A (Z) Rev. 1.0 ’00. 10. 20 概要 HB52F328DC は， 256M ビット SDRAM HM5225165BTT （TSOP パッケージ）

HM5225165BTT

Abstract: Hitachi DSA00190
Contextual Info: HB52F168GB-B HB52D168GB-B 128 MB Unbuffered SDRAM Micro DIMM 16-Mword x 64-bit, 133/100 MHz Memory Bus, 1-Bank Module 4 pcs of 16 M × 16 components PC133/100 SDRAM ADJ-203-586A (Z) Rev. 1.0 ’00. 10. 27 概要 HB52F168GB，HB52D168GB は，256M ビット SDRAM HM5225165BTT（TSOP パッケージ）を 4 個およ

Hitachi DSA00174

Abstract: Nippon capacitors
Contextual Info: HB52F328DC-75B/75BL 256 MB Unbuffered SDRAM S.O.DIMM 32-Mword x 64-bit, 133 MHz Memory Bus, 2-Bank Module 8 pcs of 16 M × 16 components PC133 SDRAM ADE-203-1187A(Z) Rev. 1.0 Oct. 20, 2000 Description The HB52F328DC is a 16M × 64 × 2 banks Synchronous Dynamic RAM Small Outline Dual In-line Memory

K4S561632C-TC75

Abstract: MR-SHPC-01 HD64404 SB21150AC SB21150 MR-SHPC-01-V2 A940 OS8104 HK-2-S circuit diagram of moving LED message display
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

Contextual Info: HB52F168GB-B HB52D168GB-B EO 128 MB Unbuffered SDRAM Micro DIMM 16-Mword x 64-bit, 133/100 MHz Memory Bus, 1-Bank Module 4 pcs of 16 M × 16 components PC133/100 SDRAM L E0008H10 (1st edition) (Previous ADE-203-1219A (Z) Jan. 19, 2001 Description Pr The HB52F168GB and HB52D168GB are a 16M × 64 × 1 banks Synchronous Dynamic RAM Micro Dual

HM5225405BTT-A6

Abstract: HM5225165B
Contextual Info: EO HM5225165B-75/A6/B6 HM5225805B-75/A6/B6 HM5225405B-75/A6/B6 L 256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword x 16-bit × 4-bank/8-Mword × 8-bit × 4-bank /16-Mword × 4-bit × 4-bank PC/133, PC/100 SDRAM Pr Description E0082H10 1st edition (Previous ADE-203-1073B (Z)

CMD44

Abstract: M51517 r305 finger print module BJT 3904 1510487 1SS355 ROHM smd code Z2p CMD62 RJ9 jack dimension CP10-VIA
Contextual Info: A B C D POWER ADAPTER 3V/5V/12V 4 CPU VIA C3 CPUCORE POWER PAGE 33 EBGA PAGE 3,4 PAGE 35 CHARGER BATTERY VTT 2.5V PAGE 36, 37 PAGE 34 PCI ID AD20 CARDBUS AD21 IEEE 1394 AD22 USB 2.0 AD24 LAN AD26 SOUTH BRIDGE AD18 PCI INT PCI REQ/GNT INTA#, INTD# REQ0#/GNT0#

HM5225405BTT-75

Abstract: HM5225405BTT-A6 HM5225165BLTT-A6 Hitachi DSA00167
Contextual Info: HM5225165B-75/A6/B6 HM5225805B-75/A6/B6 HM5225405B-75/A6/B6 256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword x 16-bit × 4-bank/8-Mword × 8-bit × 4-bank /16-Mword × 4-bit × 4-bank PC/133, PC/100 SDRAM ADJ-203-462A Z ’99. 11. 25 暫定仕様 Rev. 0.1

Contextual Info: HB52F328DC-75B/75BL 256 MB Unbuffered SDRAM S.O.DIMM 32-Mword x 64-bit, 133 MHz Memory Bus, 2-Bank Module 8 pcs of 16 M × 16 components PC133 SDRAM E0085H10 (1st edition) (Previous No. ADE-203-1187A(Z) Jan. 31, 2001 Description The HB52F328DC is a 16M × 64 × 2 banks Synchronous Dynamic RAM Small Outline Dual In-line Memory

HM5225405BTT-75

Abstract: HITACHI HX 2272 HM5225405BTT-A6 HM5225165BTTA 2272 decoder Hitachi DSA00164
Contextual Info: HM5225165B-75/A6/B6 HM5225805B-75/A6/B6 HM5225405B-75/A6/B6 256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword x 16-bit × 4-bank/8-Mword × 8-bit × 4-bank /16-Mword × 4-bit × 4-bank PC/133, PC/100 SDRAM ADE-203-1073A Z Preliminary Rev. 0.1 Nov. 25, 1999

Contextual Info: HB52F168GB-B HB52D168GB-B 128 MB Unbuffered SDRAM Micro DIMM 16-Mword x 64-bit, 133/100 MHz Memory Bus, 1-Bank Module 4 pcs of 16 M × 16 components PC133/100 SDRAM E0008H10 (1st edition) (Previous ADE-203-1219A (Z) Jan. 19, 2001 Description The HB52F168GB and HB52D168GB are a 16M × 64 × 1 banks Synchronous Dynamic RAM Micro Dual

HM5225165BTT

Abstract: 4L126
Contextual Info: HB52F168GB-B HB52D168GB-B EO 128 MB Unbuffered SDRAM Micro DIMM 16-Mword x 64-bit, 133/100 MHz Memory Bus, 1-Bank Module 4 pcs of 16 M × 16 components PC133/100 SDRAM L E0008H10 (1st edition) (Previous ADE-203-1219A (Z) Jan. 19, 2001 Description Pr The HB52F168GB and HB52D168GB are a 16M × 64 × 1 banks Synchronous Dynamic RAM Micro Dual

Hitachi DSA00174

Abstract: Nippon capacitors
Contextual Info: HB52D328DC-B 256 MB Unbuffered SDRAM S.O.DIMM 32-Mword x 64-bit, 100 MHz Memory Bus, 2-Bank Module 8 pcs of 16 M × 16 components PC100 SDRAM ADE-203-1188A (Z) Rev. 1.0 Oct. 20, 2000 Description The HB52D328DC is a 16M × 64 × 2 banks Synchronous Dynamic RAM Small Outline Dual In-line

HM5225405BTT-75

Abstract: Hitachi DSA002745
Contextual Info: HM5225165B-75/A6/B6, HM5225805B-75/A6/B6, HM5225405B-75/A6/B6 256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword ¥ 16-bit ¥ 4-bank/8-Mword ¥ 8-bit ¥ 4-bank /16-Mword ¥ 4-bit ¥ 4-bank PC/133, PC/100 SDRAM ADE-203-1073 Z Preliminary Rev. 0.0 Jun. 14, 1999

HM5225405BTT-75

Contextual Info: HM5225165B-75/A6/B6 HM5225805B-75/A6/B6 HM5225405B-75/A6/B6 256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword x 16-bit × 4-bank/8-Mword × 8-bit × 4-bank /16-Mword × 4-bit × 4-bank PC/133, PC/100 SDRAM E0082H10 1st edition (Previous ADE-203-1073B (Z)

HM5225165BTT

Contextual Info: HB52D328DC-B 256 MB Unbuffered SDRAM S.O.DIMM 32-Mword x 64-bit, 100 MHz Memory Bus, 2-Bank Module 8 pcs of 16 M × 16 components PC100 SDRAM E0084H10 (1st edition) (Previous ADE-203-1188A (Z) Jan. 31, 2001 Description The HB52D328DC is a 16M × 64 × 2 banks Synchronous Dynamic RAM Small Outline Dual In-line

PC133 registered reference design

Abstract: 512MB 8Mx32 DDR DRAM HM5225645FBP Hitachi DSA002714
Contextual Info: HM5225645F-B60 HM5225325F-B60 256M LVTTL interface SDRAM 100 MHz 1-Mword x 64-bit × 4-bank/2-Mword × 32-bit × 4-bank PC/100 SDRAM ADE-203-1014C Z Rev. 1.0 Oct. 1, 1999 Description The Hitachi HM5225645F is a 256-Mbit SDRAM organized as 1048576-word × 64-bit × 4-bank. The Hitachi

HM5225405B-75

Abstract: HM5225405BTT-75 Hitachi DSA00174 HM5225165BLTT-75
Contextual Info: HM5225165B-75/A6/B6 HM5225805B-75/A6/B6 HM5225405B-75/A6/B6 256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword x 16-bit × 4-bank/8-Mword × 8-bit × 4-bank /16-Mword × 4-bit × 4-bank PC/133, PC/100 SDRAM ADE-203-1073B Z Rev. 1.0 Feb. 10, 2000 Description

Hynix Cross Reference

Abstract: dram cross reference WINBOND hyundai hy57v161610d WINBOND cross reference 64Mb samsung SDRAM TC59SM716FT/AFT 256mb K4H560838B hy57v
Contextual Info: DRAM Cross Reference DDR SDRAM Winbond P/N W946432AD W942504AH W942508AH W942516AH Density 64Mb 256Mb 256Mb 256Mb Org. 2Mx32 64Mx4 32Mx8 16Mx16 Samsung K4D62323HA K4H560438B K4H560838B K4H561638B Hynix Hyundai HY57V643220CT HY5DU56422T HY5DU56822T HY5DU561622T

Contextual Info: HM5225165B-75/A6/B6, HM5225805B-75/A6/B6, HM5225405B-75/A6/B6 256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword 16-bit 4-bank/8-Mword 8-bit /16-Mword 4-bit 4-bank PC/133, PC/100 SDRAM H IT A C H I 4-bank ADE-203-1073 Z Preliminary Rev. 0.0 Jun. 14, 1999

Hitachi DSA00276

Abstract: Nippon capacitors
Contextual Info: HB52F168GB-B HB52D168GB-B 128 MB Unbuffered SDRAM Micro DIMM 16-Mword x 64-bit, 133/100 MHz Memory Bus, 1-Bank Module 4 pcs of 16 M × 16 components PC133/100 SDRAM ADE-203-1219A (Z) Rev. 1.0 Oct. 27, 2000 Description The HB52F168GB and HB52D168GB are a 16M × 64 × 1 banks Synchronous Dynamic RAM Micro Dual

HM5225165BTT

Contextual Info: HB52F328DC-75B/75BL 256 MB Unbuffered SDRAM S.O.DIMM 32-Mword x 64-bit, 133 MHz Memory Bus, 2-Bank Module 8 pcs of 16 M × 16 components PC133 SDRAM E0085H10 (1st edition) (Previous No. ADE-203-1187A(Z) Jan. 31, 2001 Description The HB52F328DC is a 16M × 64 × 2 banks Synchronous Dynamic RAM Small Outline Dual In-line Memory