HM5117400AS
Abstract: 06M6 hitachi V04 Hitachi DSA0088
Text: HB56A441BR Series 4,194,304-Word x 40-Bit High Density Dynamic RAM Module Rev. 1 Mar. 1, 1994 The HB56A441BR is a 4 M x 40 dynamic RAM module, mounted 10 pieces of 16-Mbit DRAM HM5117400AS sealed in SOJ package. An outline of the HB56A441BR is 72-pin single
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HB56A441BR
304-Word
40-Bit
16-Mbit
HM5117400AS)
72-pin
HB56A441BR
HM5117400AS
06M6
hitachi V04
Hitachi DSA0088
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SBS-60
Abstract: HM5117400AS HB56A832 HB56A832BS-7A
Text: HB56A832 Series 8,388,608-word x 32-bit High Density Dynamic RAM Module The HB56A832 is a 8M × 32 dynamic RAM module, mounted 16 pieces of 16Mbit DRAM HM5117400AS sealed in SOJ package. An outline of the HB56A832 is 72-pin single in-line package. Therefore, the HB56A832 makes high
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HB56A832
608-word
32-bit
16Mbit
HM5117400AS)
72-pin
SBS-60
HM5117400AS
HB56A832BS-7A
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hb56d836sbr-7a
Abstract: HB56D836BR-6A HB56D836SBR-6A HB56D836 HM5117400AS HB56D836BR7AC
Text: HB56D836 Series 8,388,608-word x 36-bit High Density Dynamic RAM Module The HB56D836 is a 8 M × 36 dynamic RAM module, mounted 16 pieces of 16-Mbit DRAM HM5117400AS sealed in SOJ package and 8 pieces of 4-Mbit DRAM (HM514100BS/CS) sealed in SOJ package. An outline of the
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HB56D836
608-word
36-bit
16-Mbit
HM5117400AS)
HM514100BS/CS)
72-pin
hb56d836sbr-7a
HB56D836BR-6A
HB56D836SBR-6A
HM5117400AS
HB56D836BR7AC
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hm5117400ats
Abstract: HB56T433D
Text: ADE-203-249 Z HB56T433D Series 4,194,304-word x 32-bit High Density Dynamic RAM Module Rev. 00 Apr. 21, 1994 The HB56T433D is a 4 M × 32 dynamic RAM Small Outline DIMM (S.O.DIMM), mounted 8 pieces of 16 Mbit DRAM (HM5117400ATS/ ALTS) sealed in TSOP package. An outline of the
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ADE-203-249
HB56T433D
304-word
32-bit
HM5117400ATS/
72-pin
16-bit
hm5117400ats
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HB56A432SBR-6A
Abstract: HM5117400AS HB56A432 HB56A432BR-6A
Text: HB56A432 Series 4,194,304-word x 32-bit High Density Dynamic RAM Module The HB56A432 is a 4 M × 32 dynamic RAM module, mounted 8 pieces of 16-Mbit DRAM HM5117400AS sealed in SOJ package. An outline of the HB56A432 is 72-pin single in-line package. Therefore, the HB56A432 makes high
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HB56A432
304-word
32-bit
16-Mbit
HM5117400AS)
72-pin
HB56A432SBR-6A
HM5117400AS
HB56A432BR-6A
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HB56D436BR-6A
Abstract: HB56D436SBR-7AC HB56D436 HM5117400AS HB56D436BR-7A HB56D436BR-6AC HB56D436SBR-7A
Text: HB56D436 Series 4,194,304-word x 36-bit High Density Dynamic RAM Module The HB56D436 is a 4 M × 36 dynamic RAM module, mounted 8 pieces of 16-Mbit DRAM HM5117400AS sealed in SOJ package and 4 pieces of 4-Mbit DRAM (HM514100BS/CS) sealed in SOJ package. An outline of the
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HB56D436
304-word
36-bit
16-Mbit
HM5117400AS)
HM514100BS/CS)
72-pin
HB56D436BR-6A
HB56D436SBR-7AC
HM5117400AS
HB56D436BR-7A
HB56D436BR-6AC
HB56D436SBR-7A
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Untitled
Abstract: No abstract text available
Text: HM5117400AS7GS 1/2 IL22 * C-MOS 4194304 WORD•8-BIT DYNAMIC RAM — TOP VIEW — 9 1 VDD (+5V) GND 26 10 11 I/O1 2 25 I/O4 I/O2 3 24 I/O3 12 15 16 17 WE IN 4 23 CAS IN 18 19 RAS IN 5 22 OE IN 21 8 6 NC 21 A9 IN 22 23 4 A10 IN 8 19 A8 IN A0 IN 9
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HM5117400AS7GS
A0-A10
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Hitachi DSA007579
Abstract: HM5117400AS HB56A841BR-6A Hitachi DSA00757 Hitachi DSA0075
Text: HB56A841BR Series 8,388,608-Word x 40-Bit High Density Dynamic RAM Module Rev. 1 Mar. 01, 1994 The HB56A841BR is a 8 M x 40 dynamic RAM module, mounted 20 pieces of 16-Mbit DRAM HM5117400AS sealed in SOJ package. An outline of the HB56A841BR is 72-pin single in-line
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HB56A841BR
608-Word
40-Bit
16-Mbit
HM5117400AS)
72-pin
Hitachi DSA007579
HM5117400AS
HB56A841BR-6A
Hitachi DSA00757
Hitachi DSA0075
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HM5117400AS
Abstract: HM5117400A Hitachi DSA00514
Text: ADE-203-180C Z HM5117400A/AL Series 4,194,304-word x 4-bit Dynamic Random Access Memory Rev. 3.0 Nov. 22, 1994 The Hitachi HM5117400A/AL is a CMOS dynamic RAM organized 4,194,304 word × 4 bit. It employs the most advanced CMOS technology for high performance and low power. The
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ADE-203-180C
HM5117400A/AL
304-word
mW/550
mW/495
HM5117400B/BL
HM5117400BS/BLS
CP-26/24DB)
HM5117400AS
HM5117400A
Hitachi DSA00514
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HM5117400AS7GS
Abstract: HM5117400AS7
Text: HM5117400AS7GS 1/2 IL22 * C-MOS 4194304 WORD•8-BIT DYNAMIC RAM — TOP VIEW — 9 1 VDD (+5V) GND 26 10 11 I/O1 2 25 I/O4 12 15 I/O2 3 24 I/O3 16 17 WE IN 4 23 CAS IN 18 19 RAS IN 5 22 OE IN 21 8 6 NC 21 A9 IN 22 23 4 A10 IN 8 19 A8 IN A0 IN 9
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HM5117400AS7GS
A0-A10
HM5117400AS7GS
HM5117400AS7
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HM6287HL-35
Abstract: HM62256BL-10 HM628128AL-5 HM6264AL-15 HM6287-70 HM621100AL-20 SP 1191 hm6285128 HM62V256L-8 HM658128
Text: Quick Reference Guide to Hitachi IC Memories Contens MOS RAM MOS Static RAM Static RAM Module MOS Pseudo Static RAM Application Specific Memory Synchronous Graphic RAM Dynamic RAM Module MOS Dynamic RAM Synchronous Dynamic RAM MOS ROM MOS Mask ROM MOS EEPROM
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74ABT16244ADGG
Abstract: HB56D473EJ HM5117400AS Hitachi DSA00514
Text: ADE-203-250 Z HB56D473EJ Series 4,194,304-word x 72-bit High Density Dynamic RAM Module Preliminary Rev. 0 Apr. 20, 1994 The HB56D473EJ belongs to 8 byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution
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ADE-203-250
HB56D473EJ
304-word
72-bit
16-Mbit
HM5117400AS)
HM514100BS/CS)
16-bit
74ABT16244ADGG
HM5117400AS
Hitachi DSA00514
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HN58C256 Series
Abstract: HN58V1001 hm514270a hm62256a HM628512 HN58C1001 Series DP-32 HN27C4096A HN62442 HM658512
Text: Package Information Contents Dual-in-line-Plastic Applicable Ics CERDIP Applicable Ics Zigzag-in-line Plastic Applicable Ics Flat Package Applicable Ics Chip Carrier Applicable Ics Package Information Dual-in-line Plastic Unit: mm • DP-18C 22.26 22.86 Max
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DP-18C
DP-20N
DP-22N
16160A
HM5118160A
HM51W18160A
CP-44
HN27C1024H
HN27C4096
HN62444
HN58C256 Series
HN58V1001
hm514270a
hm62256a
HM628512
HN58C1001 Series
DP-32
HN27C4096A
HN62442
HM658512
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4 bit dynamic ram
Abstract: 4170A 16 bit static RAM 16 BIT WORD STATIC RAM Dynamic RAM HB56B48 mask ram HM51 HM512200B HM514405C
Text: CONTENTS • Quick Reference Guide to Hitachi IC Memories . 7 • MOS RAM.
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ALRS8
Abstract: No abstract text available
Text: m iir 1^ 2 , HM5117400A/AL Series 4,194,304-word x 4-bit Dynamic Random Access Memory HITACHI The H itachi H M 5117400A /A L is a CMOS dynamic RAM organized 4,194,304 words x 4 bits. It employs the most advanced CMOS technology for high p erform ance and low pow er. The
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HM5117400A/AL
304-word
117400A
HM5117400AS/ALS-6
HM5117400AS/ALS-7
HM5117400AS/ALS-8
300-mil
24/26-pin
CP-24DB)
ALRS8
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D74HA3.7A-C
Abstract: E74HA3.7A-C MS163-2 A52HA3.7A-C
Text: HB56D436BT/SBT-6AC/7AC/8AC Preliminary 4,194.304-Word x 36-Bit High Density Dynamic RAM Module HITACHI The HB56D436 is a 4 M x 36 dynamic RAM module, mounted 8 pieces of 16-Mbit DRAM HM5117400AS sealed in SOJ package and 4 pieces of 4-M bit DRAM (HM514100CS) sealed in
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HB56D436BT/SBT-6AC/7AC/8AC
304-Word
36-Bit
HB56D436
16-Mbit
HM5117400AS)
HM514100CS)
72-pin
D74HA3.7A-C
E74HA3.7A-C
MS163-2
A52HA3.7A-C
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HB56D836SBT-AC
Abstract: power bank 5v 4Mx1 514400C m514400c 473e HM514400BS BLS B56A HM5116400ATS 5117800B
Text: 72-pin DRAM SIPs *32 »36 Org. Part Number Speeds ns Voltage Refresh Cycle Refresh Period Refresh Modes Power Version Number of Banks Component Base 1Mx32 HB56 A132BV/BU-B/BL HB56A132SBV-B/BL HB56A132BV/BU-C/CL HB56A132SBV-C/CL 60, 70, 80 5V 1K 16 ms 128 ms
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72-pin
A132BV/BU-B/BL
HB56A132SBV-B/BL
HB56A132BV/BU-C/CL
HB56A132SBV-C/CL
HB56A132BW-B/BL
HB56A132SBW-B/BL
HB56A132BW-C/CL
HB56A132SBW-C/CL
HB56A232BT-B/BL
HB56D836SBT-AC
power bank 5v
4Mx1
514400C
m514400c
473e
HM514400BS BLS
B56A
HM5116400ATS
5117800B
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Untitled
Abstract: No abstract text available
Text: M UT" >5" 5 HB56A441BR Series 4,194,304-Word x 40-Bit High Density Dynamic RAM Module Rev. 1 Mar. 1,1994 HITACHI The HB56A441BR is a 4 M x 40 dynamic RAM m odule, m ounted 10 pieces of 16-M bit DRAM H M 5117400A S sealed in SOJ package. An outline of the HB56A441BR is 72-pin single in
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HB56A441BR
304-Word
40-Bit
117400A
72-pin
HB56A441BR-6A
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RAS 05
Abstract: HB56D436SBR-7AC HB56D436BR-7A HBS6D436SBR-8A hb56d436br-6ac
Text: HB56D436 Series 4,194,304-word x 36-bit High D ensity D ynam ic R AM Module T h e H B 56D 436 is a 4 M x 36 d y n am ic RA M m o d u le, m ounted 8 p iece s o f 16 -M b it D R A M H M 5117400A S sealed in SO J package and 4 p ie c e s o f 4 -M b it D R A M (H M 5 1 4 1 0 0 B S /C S )
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HB56D436
304-word
36-bit
117400A
HB56D436BR-6A
HB56D436BR-7
RAS 05
HB56D436SBR-7AC
HB56D436BR-7A
HBS6D436SBR-8A
hb56d436br-6ac
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Untitled
Abstract: No abstract text available
Text: HB56A432 Series 4,194,304-word x 32-bit High Density Dynamic RAM Module T h e H B 5 6 A 4 3 2 is a 4 M x 32 d y n a m ic R A M m o d u le , m o u n te d 8 p ie c e s o f 1 6 -M b it D R A M H M 5 1 1 7 4 0 0 A S s e a le d in S O J p a c k a g e . A n outlin e o f the H B 56A 432 is 72-pin single in-line
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HB56A432
304-word
32-bit
72-pin
HB56A432BR-6A
HB56A432BR-7A
HB56A432BR-8A
HB56A432SBR-6A
HB56A432BR-XX
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m51174
Abstract: m5117400 M511740
Text: ADE-203-180C Z H M 5 1 1 7 4 0 0 A / A L Series 4,194,304-word x 4-bit Dynamic Random Access Memory Rev. 3.0 Nov. 22, 1994 HITACHI T he H ita c h i H M 5 1 1 7 4 0 0 A /A L is a C M O S dynamic RAM organized 4,194,304 word x 4 bit. It employs the most advanced CMOS technology
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ADE-203-180C
304-word
117400A
HM5117400AS/ALS-6
HM5117400AS/ALS-7
M5117400AS/ALS-8
M5117400ATS/ALTS-6
M5117400ATS/ALTS-7
M5117400ATS/ALTS-8
300-mil
m51174
m5117400
M511740
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HB56A841BR-6A
Abstract: D8553
Text: HB56A841BR Series 8,388,608-Word x 40-Btt High Density Dynamic RAM Module HITACHI The HB56A841BR is a 8 M x 40 dynamic RAM m odule, m ounted 20 pieces of 16-M bit DRAM H M 5117400A S sealed in SOJ package. An outline of the HB56A841BR is 72-pin single in
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HB56A841BR
608-Word
40-Btt
117400A
72-pin
HB56A841BR-6A
D8553
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