HITACHI 2SJ50 Search Results

lvc16244

Abstract: BC240 2sk3174 CBT1G125 LV2GT14A HC32 Hitachi HA13557A transistor 2SC1162 H8 hitachi programming manual 30204SP
Contextual Info: HITACHI ELECTRONIC COMPONENTS DATABOOK 2003 INDEX General Informations Multi Perpose Products Safety Considerations Hitachi Semiconductor Package Databook HITACHI Sales Locations Diodes Microcontroller Microcontroller General Microcontroller Overview List

2SC 8550

Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
Contextual Info: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4

2SJ504

Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

2SJ1334

Abstract: 2SK3235 HSK81 Hitachi DSAUTAZ006 HA16141
Contextual Info: HA16142P/FP PFC and PWM Controller Application Note ADE-504-006 Z Rev.0 5/17/02 Hitachi, Ltd. Notice When using this document, keep the following in mind: 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,

2SJ505

Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

2SJ506

Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

TO220CFM

Abstract: 2SK2554 TO-220CFM to-3p(i)d series HAT1020R HAT1021R HAT1023R HAT1024R HAT1026R HAT2016R
Contextual Info: Power Mosfet 5th Generation The Performance Revolution Literature Order Number Revision Number 5/14/97 Hitachi Europe, Ltd. European Marketing Power Mosfet 5th Generation - The Performance Revolution 1.1 RDS ON 4.5m Ohm - A new standard has been set With the introduction of the new D5-Series HITACHI started a new age of RDS (ON)

2sk135

Abstract: 2SK134 2SJ49 2sk134 hitachi 2sk135 2SK133 2Sk135 HITACHI 2Sk134 HITACHI 2SK13S HITACHI 2SK133 2sk133 2Sj48
Contextual Info: blE D *44^205 ÜD13D0Ö 217 IHIT4 2SK133,2SK134,2SK135 HITACHI/ OPTOELECTRONICS SILICON N-CHANNEL MOS FET LOW FREQUENCY POWER AMPLIFIER Complementary pair with 2SJ48, 2SJ49, 2SJ50 • FEATURES • • • • • • • High Power Gain. Excellent Frequency Response.

2SK134

Abstract: 2SJ49 2sk134 2SK135 2SJ50 2SJ49 2SK133 hitachi 2sk135 2SJ48 2sk1 CIMI
Contextual Info: blE D *44^205 ÜD13D0Ö 217 IHIT4 2SK133,2SK134,2SK135 HITACHI/ OPTOELECTRONICS SILICON N-CHANNEL MOS FET LOW FREQUENCY POWER AMPLIFIER Complementary pair with 2SJ48, 2SJ49, 2SJ50 • FEATURES • • • • • • • High Power Gain. Excellent Frequency Response.

ADE-208-546

Abstract: Hitachi 2SJ
Contextual Info: 2SJ504 Silicon P Channel MOS FET High Speed Power Switching HITACHI ADE-208-546 Target specification 1st. Edition Features • Low on-resistance R ds o« = 0.042Q typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline TO—220FM

Hitachi 2SJ

Contextual Info: 2SJ505 L , 2SJ505(S) Silicon P Channel MOS FET High Speed Power Switching HITACHI ADE-208-547 Target specification 1st. Edition Features • Low on-resistance • Low drive current. • 4V gate drive devices. • High speed switching. R d s („ „ ) = 0.017Q typ.

Contextual Info: 2SJ506 L , 2SJ506(S) Silicon P Channel MOS FET High Speed Power Switching HITACHI ADE-208-548 Target Specification 1st. Edition Features • Low on-resistance • L o w drive current • H igh speed switching • 4 V gate drive devices. Roaon) = 0.065 Q typ. (at V GS= -1 0 V , ID = -5 A )

2SJ56 2sk176

Abstract: 2sJ50 mosfet Hitachi 2sk176 2sj56 2SK176 2sk133 2Sj48 2sk1058 2SJ162 transistor 2sj162 2SJ56 2SJ56 HITACHI 2SK1058 MOSFET
Contextual Info: HITACHI 5 1.4 S-Series for Power Amplifiers output stages can easily be designed just by connecting extra power MOSFETs in parallel. This flexibility arises from th e p o sitiv e temperature coefficient of the pow er MOSFET, which gives the transistor the ability to share

2SJ56 2sk176

Abstract: 2SK176 2sk1058 2SJ162 HITACHI 2Sk176 2SJ75 2sk133 2Sj48 2sJ50 mosfet 2sj56 2SK1058 MOSFET APPLICATION NOTES 2sk135 application
Contextual Info: HITACHI 35 5.9 Television and CRT Displays B lo ck D ia g ra m Video R o— G H orizon tal y D eflection' Coil , Vertical ' Deflection , Coil 1 I Horizontal Deflection Video output - "I Focus _ _ Electrocie” B O . Deflection Signal m Vertical Ci Vertical

2SJ506

Abstract: Hitachi DSA0076 Hitachi 2SJ
Contextual Info: 2SJ506 L , 2SJ506(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-548C (Z) 4th. Edition Jun. 1998 Features • Low on-resistance R DS(on) = 0.065 Ω typ. (at V GS = –10V, ID = –5A) • Low drive current • High speed switching • 4V gate drive devices.

2SJ504

Abstract: ADE-208-546 Hitachi DSA00396
Contextual Info: 2SJ504 Silicon P Channel MOS FET High Speed Power Switching ADE-208-546 Target specification 1st. Edition Features • Low on-resistance R DS on = 0.042Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline TO–220FM

2SJ506

Abstract: Hitachi DSA00347
Contextual Info: 2SJ506 L , 2SJ506(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-548 Target Specification 1st. Edition Features • Low on-resistance R DS(on) = 0.065 Ω typ. (at V GS = –10V, ID = –5A) • Low drive current • High speed switching • 4V gate drive devices.

Hitachi DSA0076

Abstract: 2SJ505 Hitachi 2SJ
Contextual Info: 2SJ505 L , 2SJ505(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-547B (Z) 3rd. Edition Jun. 1998 Features • Low on-resistance R DS(on) = 0.017Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline LDPAK

Hitachi DSA00276

Contextual Info: 2SJ504 Silicon P Channel MOS FET High Speed Power Switching ADE-208-546B Z 3rd. Edition Jun. 1998 Features • Low on-resistance R DS(on) = 0.042Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline TO–220FM D G S

2SJ505

Abstract: Hitachi DSA00347
Contextual Info: 2SJ505 L , 2SJ505(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-547 Target specification 1st. Edition Features • Low on-resistance R DS(on) = 0.017Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline

Hitachi 2SJ

Abstract: Hitachi DSA002779
Contextual Info: 2SJ505 L , 2SJ505(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-547 Target specification 1st. Edition Features • Low on-resistance RDS(on) = 0.017Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline

Hitachi 2SJ

Abstract: Hitachi DSA002757
Contextual Info: 2SJ504 Silicon P Channel MOS FET High Speed Power Switching ADE-208-546 Target specification 1st. Edition Features • Low on-resistance R DS on = 0.042Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline 2SJ504 Absolute Maximum Ratings (Ta = 25°C)

Hitachi 2SJ

Abstract: Hitachi DSA002757
Contextual Info: 2SJ505 L , 2SJ505(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-547 Target specification 1st. Edition Features • Low on-resistance R DS(on) = 0.017Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline

2SJ504

Abstract: Hitachi 2SJ Hitachi DSA002779
Contextual Info: 2SJ504 Silicon P Channel MOS FET High Speed Power Switching ADE-208-546 Target specification 1st. Edition Features • Low on-resistance RDS on = 0.042Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline 2SJ504 Absolute Maximum Ratings (Ta = 25°C)