2SJ49 Search Results

Contextual Info: _ DATA SHEET_ MOS FIELD EFFECT POWER TRANSISTORS 2SJ494 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DIMENSIONS DESCRIPTION in millimeter This product is P-Channel MOS Field Effect Transistor designed for high current switching applications.

2SJ493

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ493 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION This product is P-Channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SJ493 Isolated TO-220 designed for high current switching applications.

mosfet 2SJ499

Abstract: 2SJ499
Contextual Info: Ordering number : ENN6589 2SJ499 P-Channel Silicon MOSFET 2SJ499 Load Switching Applications Features Low ON-state resistance. 4V drive. unit : mm 2083B [2SJ499] 2.3 0.5 5.5 7.0 1.5 6.5 5.0 4 1.2 7.5 0.8 1.6 0.85 0.7 0.6 0.5 1 2 1 : Gate 2 : Drain 3 : Source

Contextual Info: Preliminary Datasheet 2SJ496 R07DS0433EJ0400 Previous: REJ03G0870-0300 Rev.4.00 Jun 07, 2011 Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.12 Ω typ. (at VGS = –10 V, ID = –2.5 A) • 4 V gate drive devices.

PC1094C

Abstract: tea 1020 2SJ494 1094g 682 FET TEI-603 MEB-504 TEA 0298 MOS 4011
Contextual Info: データ・シート MOS形電界効果パワートランジスタ MOS Field Effect Power Transistors 2SJ494 ＰチャネルパワーMOS FET スイッチング用 工業用 本製品はＰチャネル縦型パワーMOS FETで，スイッチング特性が優れており，各種アクチュエータ駆動回路やスイ

2SJ493

Abstract: pc1094 tea 1020
Contextual Info: データ・シート MOS形電界効果パワートランジスタ MOS Field Effect Power Transistors 2SJ493 PチャネルパワーMOS FET スイッチング用 工業用 本製品はＰチャネル縦型パワーMOS FETで，オン抵抗特性が優れており，各種アクチュエータ駆動回路やスイッチ

2SJ492

Abstract: 2SJ492-S 2SJ492-ZJ MP-25
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ492 SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for DC/DC converters and motor/lamp driver circuits. FEATURES ORDERING INFORMATION • Low on-state resistance

C11892E

Abstract: 2SJ495 TEA-1035 A3856 m30 tf 125
Contextual Info: DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SJ495 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS This product is P-Channel MOS Field Effect Transistor in millimeter designed for high current switching applications. 10.0 ± 0.3

2SJ492

Contextual Info: MOSFET SMD Type MOS Field Effect Transistor 2SJ492 TO-263 +0.1 1.27-0.1 RDS on 2 = 185 m (MAX.) (VGS =-4 V, ID =-10 A) Low Ciss: Ciss = 1210 pF (TYP.) 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 Built-in gate protection diode +0.2 4.57-0.2 5.60 (MAX.) (VGS = -10 V, ID = -10 A)

2SJ499

Abstract: N6589
Contextual Info: 注文コード No. N 6 5 8 9 2SJ499 No. N6589 63000 新 2SJ499 特長 P チャネル MOS 形シリコン電界効果トランジスタ ロードスイッチ用 ・低オン抵抗。 ・ 4V駆動。 絶対最大定格 Absolute Maximum Ratings / Ta=25℃ ドレイン・ソース電圧

Contextual Info: 2SJ499 P- Channel Silicon MOS FET TENTATIVE Features and Applications • Low ON-state resistance. • 4V drive. Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage Drain Current DC Drain Current(Pulse) Allowable power Dissipation

Hitachi 2SJ

Abstract: Hitachi DSA00279
Contextual Info: 2SJ496 Silicon P-Channel MOS FET High Speed Power Switching ADE-208-482 1st. Edition Features • Low on-resistance R DS on = 0.12Ω typ. (at VGS = –10 V, I D = –2.5 A) • 4V gate drive devices. • Large current capacitance ID = –5 A Outline 2SJ496

2SJ496

Abstract: 2SJ496TZ-E PRSS0003DC-A
Contextual Info: 2SJ496 Silicon P Channel MOS FET REJ03G0870-0300 Previous: ADE-208-482A Rev.3.00 Sep 07, 2005 Description High speed power switching Features • Low on-resistance RDS (on) = 0.12 Ω typ. (at VGS = –10 V, ID = –2.5 A) • 4 V gate drive devices. • Large current capacitance

2SJ492

Abstract: 2SJ492-S 2SJ492-ZJ MP-25
Contextual Info: データ・シート MOS 形電界効果トランジスタ MOS Field Effect Transistor 2SJ492 P チャネル・パワーMOS FET スイッチング用 2SJ492 は P チャネル縦型パワーMOS FET で，スイッチング特性が優れており，各種アクチュエータ駆動用途や

2SJ492

Abstract: 2SJ492-S 2SJ492-ZJ MP-25
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ492 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION This product is P-Channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SJ492 TO-220AB 2SJ492-S TO-262 2SJ492-ZJ TO-263 designed for DC/DC converters and motor/lamp driver

C11892E

Abstract: D12971E D1297 2SJ494 TEA-1035
Contextual Info: DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SJ494 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DIMENSIONS DESCRIPTION in millimeter This product is P-Channel MOS Field Effect Transistor designed for high current switching applications. 4.5±0.2

Contextual Info: Preliminary Datasheet 2SJ496 R07DS0433EJ0400 Previous: REJ03G0870-0300 Rev.4.00 Jun 07, 2011 Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.12 Ω typ. (at VGS = –10 V, ID = –2.5 A) • 4 V gate drive devices.

2SJ496

Abstract: Hitachi 2SJ DSA003642
Contextual Info: 2SJ496 Silicon P-Channel MOS FET High Speed Power Switching ADE-208-482A Z 2nd. Edition Mar. 2001 Features • Low on-resistance R DS(on) = 0.12Ω typ. (at VGS = –10 V, I D = –2.5 A) • 4V gate drive devices. • Large current capacitance ID = –5 A

2SJ496

Contextual Info: 2SJ496 Silicon P-Channel MOS FET High Speed Power Switching ADE-208-482 1st. Edition Features • Low on-resistance R DS on = 0.12Ω typ. (at VGS = –10 V, I D = –2.5 A) • 4V gate drive devices. • Large current capacitance ID = –5 A Outline TO-92 Mod

PC1094

Abstract: tea 1020 2SJ495 D1126
Contextual Info: データ・シート MOS形電界効果パワートランジスタ MOS Field Effect Power Transistors 2SJ495 PチャネルパワーMOSFET スイッチング用 工業用 本製品はＰチャネル縦型パワーMOSFETで，オン抵抗特性が優れており，各種アクチュエータ駆動回路やスイッチ

2sk135

Abstract: 2SK134 2SJ49 2sk134 hitachi 2sk135 2SK133 2Sk135 HITACHI 2Sk134 HITACHI 2SK13S HITACHI 2SK133 2sk133 2Sj48
Contextual Info: blE D *44^205 ÜD13D0Ö 217 IHIT4 2SK133,2SK134,2SK135 HITACHI/ OPTOELECTRONICS SILICON N-CHANNEL MOS FET LOW FREQUENCY POWER AMPLIFIER Complementary pair with 2SJ48, 2SJ49, 2SJ50 • FEATURES • • • • • • • High Power Gain. Excellent Frequency Response.

C11892E

Abstract: TEA-1037 D1297
Contextual Info: DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SJ495 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DIMENSIONS DESCRIPTION in m illim eter T his product is P-Channel MOS Field Effect Transistor designed for high current switching applications.

Contextual Info: DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SJ495 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS in m illim eter This product is P-Channel MOS Field E ffect Transistor designed for high current switching applications.

Hitachi 2SJ

Abstract: Hitachi DSA002757
Contextual Info: 2SJ496 Silicon P-Channel MOS FET High Speed Power Switching ADE-208-482 1st. Edition Features • Low on-resistance R DS on = 0.12Ω typ. (at VGS = –10 V, I D = –2.5 A) • 4V gate drive devices. • Large current capacitance ID = –5 A Outline 2SJ496