Untitled
Abstract: No abstract text available
Text: MA3018M60000000 N-Ch 30V Fast Switching MOSFETs Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage TXC CORPORATION , All Rights Reserved. 1 Rev A.01 D112610
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MA3018M60000000
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Untitled
Abstract: No abstract text available
Text: MA3809M60000000 Dual N-Ch N-Ch 30V Fast Switching MOSFETs Rating Symbol Parameter Die1 Die2 Units VDS Drain-Source Voltage 30 30 V VGS Gate-Source Voltage TXC CORPORATION , All Rights Reserved. 1 Rev A.01 D112610
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MA3809M60000000
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Untitled
Abstract: No abstract text available
Text: MA3028M60000000 N-Ch 35V Fast Switching MOSFETs Symbol Parameter Rating Units VDS Drain-Source Voltage 35 V VGS Gate-Source Voltage TXC CORPORATION , All Rights Reserved. 1 Rev A.01 D112610
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MA3028M60000000
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Untitled
Abstract: No abstract text available
Text: MA3016AM6000000 N-Ch 30V Fast Switching MOSFETs Rating Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage 10s Steady State 30 Units V TXC CORPORATION , All Rights Reserved. 1 Rev A.01 D112610
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MA3016AM6000000
D112610
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Untitled
Abstract: No abstract text available
Text: MA3006M60000000 N-Ch 30V Fast Switching MOSFETs Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage TXC CORPORATION , All Rights Reserved. 1 Rev A.01 D112610
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MA3006M60000000
D112610
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Untitled
Abstract: No abstract text available
Text: MA3807M60000000 Dual N-Ch N-Ch 30V Fast Switching MOSFETs General Description Rating Symbol Parameter Die1 Die2 Units VDS Drain-Source Voltage 30 30 V VGS Gate-Source Voltage TXC CORPORATION , All Rights Reserved. 1 Rev A.01 D112610
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Untitled
Abstract: No abstract text available
Text: MA3024M6000000 N-Ch 30V Fast Switching MOSFETs Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage TXC CORPORATION , All Rights Reserved. 1 Rev A.01 D112610
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MA3024M6000000
D112610
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Untitled
Abstract: No abstract text available
Text: MA3004M60000000 N-Ch 30V Fast Switching MOSFETs Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage TXC CORPORATION , All Rights Reserved. 1 Rev A.01 D112610
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MA3004M60000000
D112610
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Untitled
Abstract: No abstract text available
Text: MA3018M60000000 N-Ch 30V Fast Switching MOSFETs General Description Product Summery The MA3018M6 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter
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MA3018M60000000
MA3018M6
PRPAK56
D112610
3000pcs
6000pcs
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Untitled
Abstract: No abstract text available
Text: MA3016AM6000000 N-Ch 30V Fast Switching MOSFETs General Description Product Summery The MA3016AM6 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter
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MA3016AM6000000
MA3016AM6
D112610
3000pcs
6000pcs
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Untitled
Abstract: No abstract text available
Text: MA3024M6000000 N-Ch 30V Fast Switching MOSFETs General Description Product Summery The MA3024M6 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications .
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MA3024M6000000
MA3024M6
D112610
3000pcs
6000pcs
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2SJ493
Abstract: No abstract text available
Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社
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2SJ493
108-0171NEC
46017NEC
54024NEC
2SJ493
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2SJ493
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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2SJ493
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ493 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION This product is P-Channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SJ493 Isolated TO-220 designed for high current switching applications.
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2SJ493
O-220
2SJ493
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Untitled
Abstract: No abstract text available
Text: MA3028M60000000 N-Ch 35V Fast Switching MOSFETs General Description Product Summery The MA3028M6 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck
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MA3028M60000000
MA3028M6
D112610
3000pcs
6000pcs
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Untitled
Abstract: No abstract text available
Text: MA3004M60000000 N-Ch 30V Fast Switching MOSFETs General Description Product Summery The MA3004M6 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck
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MA3004M60000000
MA3004M6
D112610
3000pcs
6000pcs
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PC1094C
Abstract: tea 1020 2SJ494 1094g 682 FET TEI-603 MEB-504 TEA 0298 MOS 4011
Text: データ・シート MOS形電界効果パワートランジスタ MOS Field Effect Power Transistors 2SJ494 ＰチャネルパワーMOS FET スイッチング用 工業用 本製品はＰチャネル縦型パワーMOS FETで，スイッチング特性が優れており，各種アクチュエータ駆動回路やスイ
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2SJ494
O-220MP-45F
108-0171NEC
46017NEC
54024NEC
PC1094C
tea 1020
2SJ494
1094g
682 FET
TEI-603
MEB-504
TEA 0298
MOS 4011
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2SJ493
Abstract: pc1094 tea 1020
Text: データ・シート MOS形電界効果パワートランジスタ MOS Field Effect Power Transistors 2SJ493 PチャネルパワーMOS FET スイッチング用 工業用 本製品はＰチャネル縦型パワーMOS FETで，オン抵抗特性が優れており，各種アクチュエータ駆動回路やスイッチ
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2SJ493
O-220MP-45F
PW10s,
108-0171NEC
46017NEC
54024NEC
2SJ493
pc1094
tea 1020
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2SJ492
Abstract: 2SJ492-S 2SJ492-ZJ MP-25
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ492 SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for DC/DC converters and motor/lamp driver circuits. FEATURES ORDERING INFORMATION • Low on-state resistance
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2SJ492
O-220AB
MP-25)
2SJ492-S
O-262
MP-25
2SJ492-ZJ
O-220SMD
MP-25ZJ)
2SJ492
2SJ492-S
2SJ492-ZJ
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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PDF
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Untitled
Abstract: No abstract text available
Text: MA3006N60000000 N-Ch 30V Fast Switching MOSFETs General Description Product Summery The MA3006N6 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck
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MA3006N60000000
MA3006N6
D112610
3000pcs
6000pcs
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Untitled
Abstract: No abstract text available
Text: MA3809M60000000 Dual N-Ch N-Ch 30V Fast Switching MOSFETs General Description Product Summery The MA3809M6 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter
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MA3809M60000000
MA3809M6
D112610
3000pcs
6000pcs
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300W half bridge
Abstract: se-301 ic regulator 12v 30a CURRENT REGULATOR 12V 30A 230v to 12v regulator 230V AC to 12V DC ic MIL-HDBK-217C 180v 250w
Text: 250 - 300 Watt Multiple Output • Open frame construction • 115 Vac or 230 Vac user selectable • Built-in OVP and remote sense for main output • Built-in remote inhibit • Built-in EMI line filter • Input surge current protection • Half bridge pulse with
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OCR Scan
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-63Hz
400Hz)
3750VAC
1250VAC
1500VAC
500VAC
D11-26
300W half bridge
se-301
ic regulator 12v 30a
CURRENT REGULATOR 12V 30A
230v to 12v regulator
230V AC to 12V DC ic
MIL-HDBK-217C
180v 250w
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PDF
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