HIGHER VOLTAGE CAPACITANCE Search Results

MMP7080-127-1

Abstract: MELF pad layout MMP7076 MMP7076-127-1 high power pin diode MMP7072-127-1 melf diode, square VJ Non-Magnetic Series for IR Reflow Soldering
Contextual Info: High Power MELF PIN Diodes Series MMP7072-127-1, MMP7076-127-1, MMP7080-127-1 Features • Higher Average Power Handling: >100 Watts CW • Higher Voltage Rating: >600 Volts • Lower Rs: <0.8 Lower Insertion Loss & Higher IIP3 • Lower Thermal Resistance: <20 °C / W for Higher Power

melf diode, square

Abstract: VJ Non-Magnetic Series for IR Reflow Soldering
Contextual Info: High Power MELF PIN Diodes Series MMP7072-127-1, MMP7076-127-1, MMP7080-127-1 Datasheet Features • Higher Average Power Handling: >100 Watts CW • Higher Voltage Rating: >600 Volts • Lower Rs: <0.8 Lower Insertion Loss & Higher IIP3 • Lower Thermal Resistance: <20 °C / W for Higher Power

MMP7080-127-1

Abstract: Moisture Sensitivity Level Rating MMP7072-127-1 MMP7076 PEAK tray drawing surface mount diode e14 MMP70 MMP7080 VJ Non-Magnetic Series for IR Reflow Soldering
Contextual Info: High Power MELF PIN Diodes Series MMP7072-127-1, MMP7076-127-1, MMP7080-127-1 Datasheet Features • Higher Average Power Handling: >100 Watts CW • Higher Voltage Rating: >600 Volts • Lower Rs: <0.8 Lower Insertion Loss & Higher IIP3 • Lower Thermal Resistance: <20 °C / W for Higher Power

CGH60030D

Abstract: CGH6003 cree 3535
Contextual Info: CGH60030D 30 W, 6.0 GHz, GaN HEMT Die Cree’s CGH60030D is a gallium nitride GaN High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal

cree 3535

Contextual Info: CGH60030D 30 W, 6.0 GHz, GaN HEMT Die Cree’s CGH60030D is a gallium nitride GaN High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal

Contextual Info: PRELIMINARY CRF24010 10 W, SiC RF Power MESFET Cree’s CRF24010 is an unmatched silicon carbide SiC RF power MetalSemiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher

Contextual Info: PRELIMINARY CRF24010 10 W, SiC RF Power MESFET Cree’s CRF24010 is an unmatched silicon carbide SiC RF power MetalSemiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher

CRF24010F

Abstract: 0592 transistor substitution chart atc 17-33 CRF24010P substrate 106-682 2244 PORCELAIN CRF24010 127324
Contextual Info: CRF24010 10 W, SiC RF Power MESFET Cree’s CRF24010 is an unmatched silicon carbide SiC RF power MetalSemiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher

TC 9164 N

Abstract: 95160 85713 CuMoCu CRF24060 CRF24060D F240 08816
Contextual Info: CRF24060D 60 W SiC RF Power MESFET Die Cree’s CRF24060 is a silicon carbide SiC RF power Metal-Semiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher

ATC1206

Abstract: AVX08051C222MAT2A CRF24010 JESD22-A114 CRF24010F HI1206 DSA00291593.txt
Contextual Info: PRELIMINARY CRF24010 10 W, SiC RF Power MESFET Cree’s CRF24010 is an unmatched silicon carbide SiC RF power MetalSemiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher

CRF24060

Abstract: CRF24060F C17AH TRANSISTOR SUBSTITUTION TRANSISTOR SUBSTITUTION DATA BOOK CRF-24060 rogers
Contextual Info: CRF24060 60 W, SiC RF Power MESFET Cree’s CRF24060 is an unmatched silicon carbide SiC RF power MetalSemiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher

Contextual Info: CRF24060D 60 W SiC RF Power MESFET Die Cree’s CRF24060 is a silicon carbide SiC RF power Metal-Semiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher

95160

Abstract: CuMoCu 21864 300G 74382 85713 CRF24060 CRF24060D F240 40014
Contextual Info: CRF24060D 60 W SiC RF Power MESFET Die Cree’s CRF24060 is a silicon carbide SiC RF power Metal-Semiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher

Contextual Info: PRELIMINARY CRF24010 10 W, SiC RF Power MESFET Cree’s CRF24010 is an unmatched silicon carbide SiC RF power MetalSemiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher

cgh60120D

Contextual Info: CGH60120D 120 W, 6.0 GHz, GaN HEMT Die Cree’s CGH60120D is a gallium nitride GaN High Electron Mobility Transistor (HEMT). GaN has superior properties compared to PN: CGH6012 0D silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity.

PCT10/35DK

Abstract: Nemco hysol tantalum capacitor TB Series JESD97 J-STD-020B CGT 0045
Contextual Info: Tips for Design and Use Catalog data relates to an ambient temperature of +25°C measured at 125 Hz, 0.5V RMS unless otherwise specified. Substitutions of higher voltage ratings, lower ESR values, tighter capacitance tolerances and higher temperature rated devices

varactor diode parameter

Abstract: MA4ST1103 MA4ST1103-1141T SOD323 parasitic
Contextual Info: High Tuning Ratio Silicon Hyperabrupt Varactor Diode Features • • • • MA4ST1103-1141T V1 SOD-323 Plastic Package Lower Series Resistance < 0.7 Ω Higher Capacitance Ratio > 3.5:1 Higher Tuning Voltage < 18 V Tape and Reel Surface Mount Packaging Description and Applications

Contextual Info: Solid Niobium Oxide Chip Capacitors – NC Series Operating Temp.: -55℃~+125℃ FEATURES Superior cost efficiency Self-healing capability, high reliability Excellent stability of capacitance during operating temperature range High volumetric efficiency Stand higher surge voltage, open failure mode, higher safety

surface mount diode e14

Abstract: MSSP25250-70
Contextual Info: SEMI-SCALETM PIN Diodes MSSP25250-70 Series Datasheet Features • 0603 Surface Mount PIN Diode 1.5 mm x 0.76mm x 0.2 mm H • Lower Parasitics than Comparable Surface Mount Devices • Higher Average Power Handling > 10 W C.W. • Higher Voltage Rating > 350 Volts for Higher RF Peak Power

LH1500

Abstract: dc relay snubber RC snubber mosfet design LH1526 2N2222 IN4004 LH1516 P3300AA61 V230LA4 RC snubber
Contextual Info: Stacking Our Solid State Relays for Higher Switching Voltages Appnote 60 Introduction Voltage Sharing Infineon solid state relays SSR provide high-voltage switching capability (presently up to 400 V) in packages as small as a 6 pin DIP. Higher switching voltages can be achieved when relays are

siemens RC snubber

Abstract: dc relay snubber relay snubber siemens relays snubber RC snubber mosfet design HOW TO DRIVE SSR USING MOSFET DRIVER lh1500 snubber relay dpst ssr relays siemens relays
Contextual Info: Stacking Our Solid State Relays for Higher Switching Voltages Appnote 60 Introduction Voltage Sharing Siemens solid state relays SSR provide high-voltage switching capability (presently up to 400 V) in packages as small as a 6-pin DIP. Higher switching voltages can be achieved when relays are

SAMSUNG CHIP CAPACITOR

Abstract: marking code samsung SMD capacitor cross reference capacitor 100nf 16v x7r 10 1005 murata cl10b104ka8 CAP 100nF 50V 0603 cog H63A VJ C0G NPO Dielectric CL10B104KA8NNNC MCH182C104KKN
Contextual Info: Multilayer Ceramic Capacitor • INTRODUCTION MLCC Multilayer Ceramic Capacitor is SMD(Surface Mounted Device) type capacitor that is used in wide ranges of capacitance. MLCC is paid more attentions than other capacitors due to the better frequency characteristics, higher reliability, higher withstanding voltage and so on.

CGH60060D

Abstract: hemt .s2p 5609 transistor
Contextual Info: CGH60060D 60 W, 6.0 GHz, GaN HEMT Die Cree’s CGH60060D is a gallium nitride GaN High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift

5609 transistor

Abstract: CGH60060D bonding wire cree
Contextual Info: CGH60060D 60 W, 6.0 GHz, GaN HEMT Die Cree’s CGH60060D is a gallium nitride GaN High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift