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    CGH60030D Search Results

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    CGH60030D Price and Stock

    MACOM CGH60030D-GP5

    LINEAR IC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CGH60030D-GP5 Tray 50
    • 1 -
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    • 100 $81.8876
    • 1000 $81.8876
    • 10000 $81.8876
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    Mouser Electronics CGH60030D-GP5
    • 1 -
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    • 1000 $93.62
    • 10000 $93.62
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    Richardson RFPD CGH60030D-GP5 1
    • 1 $110.36
    • 10 $110.36
    • 100 $110.36
    • 1000 $110.36
    • 10000 $110.36
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    MACOM CGH60030D-GP4

    RF MOSFET HEMT 28V DIE
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CGH60030D-GP4 Tray 50
    • 1 -
    • 10 -
    • 100 $99.975
    • 1000 $99.975
    • 10000 $99.975
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    Mouser Electronics CGH60030D-GP4 20
    • 1 -
    • 10 $133.16
    • 100 $133.16
    • 1000 $133.16
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    Richardson RFPD CGH60030D-GP4 10
    • 1 -
    • 10 $133.15
    • 100 $133.15
    • 1000 $133.15
    • 10000 $133.15
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    CGH60030D Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CGH60030D-GP4
    		Cree/Wolfspeed Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF MOSFET HEMT 28V DIE Original PDF

    CGH60030D Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    cree 3535

    Contextual Info: CGH60030D 30 W, 6.0 GHz, GaN HEMT Die Cree’s CGH60030D is a gallium nitride GaN High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal


    Original     		CGH60030D CGH60030D CGH6003 cree 3535 PDF

    CGH60030D

    Abstract: CGH6003 cree 3535
    Contextual Info: CGH60030D 30 W, 6.0 GHz, GaN HEMT Die Cree’s CGH60030D is a gallium nitride GaN High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal


    Original     		CGH60030D CGH60030D CGH6003 cree 3535 PDF

    CGH40025P

    Abstract: CGH40010P cgh60015 GaN ADS Gan hemt transistor x band cgh40120F cgh40045f CGH60015D CGH60060D CGH60030D cgh60120D
    Contextual Info: General Purpose Wide Bandgap Transistors Gallium Nitride GaN HEMTs for Broadband Applications Broadband performance - Enables high power, multi-octave bandwidth amplifiers This “general purpose” discrete device series features Cree’s GaN HEMTs. These unmatched packaged transistors


    Original     		PDF