Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    HIGH-SPEED SWITCHING P-CHANNEL MOS TO92 Search Results

    HIGH-SPEED SWITCHING P-CHANNEL MOS TO92 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1ZMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC MOSFET、Low-side: SiC SBD Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    HN1D05FE Toshiba Electronic Devices & Storage Corporation Switching Diode, 400 V, 0.1 A, ES6 Visit Toshiba Electronic Devices & Storage Corporation
    TLP5754H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation

    HIGH-SPEED SWITCHING P-CHANNEL MOS TO92 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SJ386

    Abstract: Hitachi 2SJ Hitachi DSA00389
    Text: 2SJ386 Silicon P-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC - DC converter


    Original     		PDF 2SJ386 2SJ386 Hitachi 2SJ Hitachi DSA00389

    2SJ386

    Abstract: No abstract text available
    Text: 2SJ386 Silicon P Channel MOS FET Application TO-92Mod. High speed power switching Features • • • • Low on–resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC – DC


    Original     		PDF 2SJ386 O-92Mod. 2SJ386

    Hitachi 2SJ

    Abstract: Hitachi DSA002751
    Text: 2SJ386 Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC - DC converter


    Original     		PDF 2SJ386 D-85622 Hitachi 2SJ Hitachi DSA002751

    2SJ148

    Abstract: 2SK982 transistor a 92
    Text: 2SJ148 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ148 High Speed Switching Applications Analog Switch Applications Interface Applications • Unit: mm Excellent switching time: ton = 14 ns typ. • High forward transfer admittance: |Yfs| = 100 mS (min)


    Original     		PDF 2SJ148 2SK982 2SJ148 2SK982 transistor a 92

    Untitled

    Abstract: No abstract text available
    Text: 2SJ148 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ148 High Speed Switching Applications Analog Switch Applications Interface Applications Unit: mm • Excellent switching time: ton = 14 ns typ. • High forward transfer admittance: |Yfs| = 100 mS (min)


    Original     		PDF 2SJ148 2SK982

    Toshiba 2SJ

    Abstract: No abstract text available
    Text: 2SJ148 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ148 High Speed Switching Applications Analog Switch Applications Interface Applications • Unit: mm Excellent switching time: ton = 14 ns typ. • High forward transfer admittance: |Yfs| = 100 mS (min)


    Original     		PDF 2SJ148 2SK982 SC-43 Toshiba 2SJ

    2SJ148

    Abstract: 2SK982
    Text: 2SJ148 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ148 High Speed Switching Applications Analog Switch Applications Interface Applications • Unit: mm Excellent switching time: ton = 14 ns typ. • High forward transfer admittance: |Yfs| = 100 mS (min)


    Original     		PDF 2SJ148 2SK982 2SJ148 2SK982

    2SJ148

    Abstract: 2SK982 Toshiba 2SJ
    Text: 2SJ148 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ148 High Speed Switching Applications Analog Switch Applications Interface Applications Unit: mm • Excellent switching time: ton = 14 ns typ. · High forward transfer admittance: |Yfs| = 100 mS (min)


    Original     		PDF 2SJ148 2SK982 -55transportation 2SJ148 2SK982 Toshiba 2SJ

    2SJ386

    Abstract: Hitachi 2SJ DSA003638
    Text: 2SJ386 Silicon P-Channel MOS FET ADE-208-1195 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC - DC converter


    Original     		PDF 2SJ386 ADE-208-1195 2SJ386 Hitachi 2SJ DSA003638

    2SJ386

    Abstract: 2SJ386TZ-E PRSS0003DC-A
    Text: 2SJ386 Silicon P Channel MOS FET REJ03G0861-0200 Previous: ADE-208-1195 Rev.2.00 Sep 07, 2005 Description High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source


    Original     		PDF 2SJ386 REJ03G0861-0200 ADE-208-1195) PRSS0003DC-A 20ijing 2SJ386 2SJ386TZ-E PRSS0003DC-A

    Untitled

    Abstract: No abstract text available
    Text: 2SJ386 Silicon P Channel MOS FET REJ03G0861-0200 Previous: ADE-208-1195 Rev.2.00 Sep 07, 2005 Description High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source


    Original     		PDF 2SJ386 REJ03G0861-0200 ADE-208-1195) PRSS0003DC-A

    BSP204

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor FEATURES QUICK REFERENCE DATA • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown. DESCRIPTION P-channel enhancement mode


    OCR Scan     		PDF BSP204) BSP204; BSP204A BSP204- DA710 A/-10 MDA711 BSP204

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor FEATURES QUICK REFERENCE DATA • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown. DESCRIPTION SYMBOL PARAMETER V ds


    OCR Scan     		PDF BSP254; BSP254A

    BS208

    Abstract: MB8075
    Text: Philips Components Data sheet status Product specification date of issue February 1991 BS208 P-channel enhancement mode vertical D-MOS transistor PIN CONFIGURATION FEATURES • Direct interface to C-MOS • High-speed switching • No secondary breakdown.


    OCR Scan     		PDF BS208 aTO-92 MB8075 iz7os34 003L011 BS208 MB8075

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor FEATURES PINNING - TO-92 SOT54 variant • Direct interface to C-MOS, TTL, etc. PIN SYMBOL DESCRIPTION • High-speed switching 1 g • No secondary breakdown.


    OCR Scan     		PDF 1997Jun

    MBB691

    Abstract: BS108 UBB073
    Text: • PhilipsSemiconductor« ^ hb53=l31 0DS3?at 27t m APX PHILIPS/DISCRETE b ? E D P " *» "* .p ~ m c Mlon N-channel enhancement mode vertical D-MOS transistor FEATURES c BS108 QUICK REFERENCE DATA • Direct interface to C-MOS, TTL, etc. • High-speed switching


    OCR Scan     		PDF E372h BS108 MBB691 BS108 UBB073

    2SJ148

    Abstract: 2SK982
    Text: TO SHIBA 2SJ148 2 S J 1 48 TOSHIBA FIELD EFFECT TRANSISTOR HIGH SPEED SWITCHING APPLICATIONS SILICON P CHANNEL MOS TYPE Unit in mm ANALOG SWITCH APPLICATIONS . 5.1 M AX. INTERFACE APPLICATIONS 0.45 Excellent Switching Time ton - 14ns Typ. High Forward Transfer Admittance


    OCR Scan     		PDF 2SJ148 2SK982 SC-43 2SJ148 2SK982

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA 2SJ148 TOSHIBA FIELD EFFECT TRANSISTOR HIGH SPEED SWITCHING APPLICATIONS SILICON P CHANNEL MOS TYPE 2 S J 1 48 Unit in mm ANALOG SWITCH APPLICATIONS . 5.1 MAX. INTERFACE APPLICATIONS Excellent Switching Time : ton = 14ns Typ. High Forward Transfer Admittance : |Yfs| = lOOmS (Min.)


    OCR Scan     		PDF 2SJ148 2SK982 --10V, -100m --30V

    2SJ148

    Abstract: 2SK982
    Text: TO SH IBA 2SJ148 TOSHIBA FIELD EFFECT TRANSISTOR HIGH SPEED SWITCHING APPLICATIONS SILICON P CHANNEL MOS TYPE 2 S J 1 48 Unit in mm ANALOG SWITCH APPLICATIONS . 5.1 MAX. INTERFACE APPLICATIONS Excellent Switching Time : ton = 14ns Typ. High Forward Transfer Admittance : |Yfs| = lOOmS (Min.)


    OCR Scan     		PDF 2SJ148 2SK982 --10V, -100m --30V 2SJ148 2SK982

    TRANSISTOR D 570

    Abstract: BSS110 INFINEON BSS110 B34 transistor
    Text: Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor BSS110 FEATURES • Low threshold voltage • Direct interface to C-MOS, TTL, etc. • High speed switching • No secondary breakdown. APPLICATIONS • Intended for use as a Line current interruptor in


    OCR Scan     		PDF BSS110 nat25Â 7110fl2b 0CH3015 TRANSISTOR D 570 BSS110 INFINEON BSS110 B34 transistor

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SJ148 TOSHIBA FIELD EFFECT TRANSISTOR HIGH SPEED SWITCHING APPLICATIONS SILICON P CHANNEL MOS TYPE 2 S J 1 48 U nit in mm ANALOG SWITCH APPLICATIONS . 5.1 M AX. INTERFACE APPLICATIONS E xcellent Switching Time ton = 14ns Typ. High Forward Transfer Admittance


    OCR Scan     		PDF 2SJ148 2SK982

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SJ148 TOSHIBA FIELD EFFECT TRANSISTOR HIGH SPEED SWITCHING APPLICATIONS SILICON P CHANNEL MOS TYPE 2 S J 148 Unit in mm ANALOG SWITCH APPLICATIONS 5.1 M AX. INTERFACE APPLICATIONS Excellent Switching Time ft A'i : t0n = i4ns Typ. 0.55 MAX. High Forward Transfer Admittance ; |Yfs | = lQOmS (Min,)


    OCR Scan     		PDF 2SJ148 2SK982 SC-43

    Untitled

    Abstract: No abstract text available
    Text: Philips Components D a ta s h eet s tatu s Product specification d a te o f issue November 1990 FEATURES • BSP204/BSP204A P-channel enhancement mode vertical D-MOS transistor QUICK REFERENCE DATA Direct interface to C-MOS, TTL, etc. • High-speed switching


    OCR Scan     		PDF BSP204/BSP204A BSP204) BSP204A) Q03b073 D03b077 A/-10 CB738 003bQ

    2SJ507

    Abstract: Toshiba 2SJ Transistor
    Text: TO SHIBA 2SJ507 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2- tt- M O S V 2SJ 507 INDUSTRIAL APPLICATIONS U nit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 5.1 M AX.


    OCR Scan     		PDF 2SJ507 75MAX. --10V, 2SJ507 Toshiba 2SJ Transistor