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    HIGH VOLTAGE GAAS FET Search Results

    HIGH VOLTAGE GAAS FET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP5754H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5751H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5752H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    DCL542H01 Toshiba Electronic Devices & Storage Corporation Digital Isolator / VDD=2.25~5.5V / 150Mbps / 4 channel(F:R=2:2) / Default Output Logic: High / Output enable Visit Toshiba Electronic Devices & Storage Corporation

    HIGH VOLTAGE GAAS FET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FLL21E180IU

    Abstract: No abstract text available
    Text: FLL21E180IU High Voltage - High Power GaAs FET FEATURES ・High Voltage Operation : VDS=28V ・High Gain: 15.0dB typ. at Pout=46dBm(Avg.) ・Broad Frequency Range : 2100 to 2200MHz ・Proven Reliability DESCRIPTION The FLL21E180IU is a high power GaAs FET that offers high efficiency,


    Original     		PDF FLL21E180IU 46dBm 2200MHz FLL21E180IU

    FLL21E090IK

    Abstract: No abstract text available
    Text: FLL21E090IK High Voltage - High Power GaAs FET FEATURES ・High Voltage Operation : VDS=28V ・High Gain: 15dB typ. at Pout=43dBm(Avg.) ・Broad Frequency Range : 2100 to 2200MHz ・Proven Reliability DESCRIPTION The FLL21E090IK is a high power GaAs FET that offers high efficiency,


    Original     		PDF FLL21E090IK 43dBm 2200MHz FLL21E090IK

    FLL21E040IK

    Abstract: No abstract text available
    Text: FLL21E040IK High Voltage - High Power GaAs FET FEATURES ・High Voltage Operation : VDS=28V ・High Gain: 15dB typ. at Pout=40dBm(Avg.) ・Broad Frequency Range : 2100 to 2200MHz ・Proven Reliability DESCRIPTION The FLL21E040IK is a high power GaAs FET that offers high efficiency,


    Original     		PDF FLL21E040IK 40dBm 2200MHz FLL21E040IK

    FLL21E180IU

    Abstract: No abstract text available
    Text: FLL21E180IU High Voltage - High Power GaAs FET FEATURES ・High Voltage Operation : VDS=28V ・High Gain: 15.0dB typ. at Pout=46dBm(Avg.) ・Broad Frequency Range : 2100 to 2200MHz ・Proven Reliability DESCRIPTION The FLL21E180IU is a high power GaAs FET that offers high efficiency,


    Original     		PDF FLL21E180IU 46dBm 2200MHz FLL21E180IU

    FLL21E090IK

    Abstract: No abstract text available
    Text: FLL21E090IK High Voltage - High Power GaAs FET FEATURES ・High Voltage Operation : VDS=28V ・High Gain: 15dB typ. at Pout=43dBm(Avg.) ・Broad Frequency Range : 2100 to 2200MHz ・Proven Reliability DESCRIPTION The FLL21E090IK is a high power GaAs FET that offers high efficiency,


    Original     		PDF FLL21E090IK 43dBm 2200MHz FLL21E090IK

    7824 TO-3 package

    Abstract: high power FET transistor s-parameters FLL21E040IK MA 7824. to-3 Eudyna Devices power amplifiers
    Text: FLL21E040IK High Voltage - High Power GaAs FET FEATURES ・High Voltage Operation : VDS=28V ・High Gain: 15dB typ. at Pout=40dBm(Avg.) ・Broad Frequency Range : 2100 to 2200MHz ・Proven Reliability DESCRIPTION The FLL21E040IK is a high power GaAs FET that offers high efficiency,


    Original     		PDF FLL21E040IK 40dBm 2200MHz FLL21E040IK 7824 TO-3 package high power FET transistor s-parameters MA 7824. to-3 Eudyna Devices power amplifiers

    GHzS11

    Abstract: 7824 TO-3 package
    Text: FLL21E040IK High Voltage - High Power GaAs FET FEATURES ・High Voltage Operation : VDS=28V ・High Gain: 15dB typ. at Pout=40dBm(Avg.) ・Broad Frequency Range : 2100 to 2200MHz ・Proven Reliability DESCRIPTION The FLL21E040IK is a high power GaAs FET that offers


    Original     		PDF FLL21E040IK 40dBm 2200MHz FLL21E040IK GHzS11 7824 TO-3 package

    fujitsu gaas fet L-band

    Abstract: 1 RF s 640 a 931 FLL21E180IU FLL21E180
    Text: FLL21E180IU High Voltage - High Power GaAs FET FEATURES ・High Voltage Operation : VDS=28V ・High Gain: 15.0dB typ. at Pout=46dBm(Avg.) ・Broad Frequency Range : 2100 to 2200MHz ・Proven Reliability DESCRIPTION The FLL21E180IU is a high power GaAs FET that offers


    Original     		PDF FLL21E180IU 46dBm 2200MHz FLL21E180IU fujitsu gaas fet L-band 1 RF s 640 a 931 FLL21E180

    ED-4701

    Abstract: FLL21E045IY
    Text: FLL21E045IY L,S-band High Power GaAs FET FEATURES ・High Voltage Operation VDS=28V GaAs FET ・High Gain: 15.5dB(typ.) at Pout=40dBm(Avg.) ・Broad Frequency Range : 2110 to 2170MHz ・High Reliability DESCRIPTION The FLL21E045IY is a high power GaAs FET that offers high efficiency,


    Original     		PDF FLL21E045IY 40dBm 2170MHz FLL21E045IY ED-4701

    Z3.7

    Abstract: ED-4701 FLL21E045IY
    Text: FLL21E045IY L,S-band High Power GaAs FET FEATURES ・High Voltage Operation VDS=28V GaAs FET ・High Gain: 15.5dB(typ.) at Pout=40dBm(Avg.) ・Broad Frequency Range : 2110 to 2170MHz ・High Reliability DESCRIPTION The FLL21E045IY is a high power GaAs FET that offers high efficiency,


    Original     		PDF FLL21E045IY 40dBm 2170MHz FLL21E045IY Z3.7 ED-4701

    cw 7809

    Abstract: 6822 FET FLL21E090IY transistor 6822 transistors 6822 ED-4701
    Text: FLL21E090IY L,S-band High Power GaAs FET FEATURES ・High Voltage Operation VDS=28V GaAs FET ・High Gain: 15.5dB(typ.) at Pout=43dBm(Avg.) ・Broad Frequency Range : 2110 to 2170MHz ・High Reliability DESCRIPTION The FLL21E090IY is a high power GaAs FET that offers high efficiency,


    Original     		PDF FLL21E090IY 43dBm 2170MHz FLL21E090IY cw 7809 6822 FET transistor 6822 transistors 6822 ED-4701

    Untitled

    Abstract: No abstract text available
    Text: FLL21E135IX L,S-band High Power GaAs FET FEATURES ・High Voltage Operation VDS=28V GaAs FET ・High Gain: 15.5dB(typ.) at Pout=44.8dBm(Avg.) ・Broad Frequency Range : 2110 to 2170MHz ・High Reliability DESCRIPTION The FLL21E135IX is a high power GaAs FET that offers high efficiency,


    Original     		PDF FLL21E135IX 2170MHz FLL21E135IX

    ED-4701

    Abstract: FLL21E135IX
    Text: FLL21E135IX L,S-band High Power GaAs FET FEATURES ・High Voltage Operation VDS=28V GaAs FET ・High Gain: 15.5dB(typ.) at Pout=44.8dBm(Avg.) ・Broad Frequency Range : 2110 to 2170MHz ・High Reliability DESCRIPTION The FLL21E135IX is a high power GaAs FET that offers high efficiency,


    Original     		PDF FLL21E135IX 2170MHz FLL21E135IX ED-4701

    cw 7809

    Abstract: RM110 6822 transistor 6822 transistors 6822 ED-4701 FLL21E090IY
    Text: FLL21E090IY L,S-band High Power GaAs FET FEATURES ・High Voltage Operation VDS=28V GaAs FET ・High Gain: 15.5dB(typ.) at Pout=43dBm(Avg.) ・Broad Frequency Range : 2110 to 2170MHz ・High Reliability DESCRIPTION The FLL21E090IY is a high power GaAs FET that offers high efficiency,


    Original     		PDF FLL21E090IY 43dBm 2170MHz FLL21E090IY cw 7809 RM110 6822 transistor 6822 transistors 6822 ED-4701

    L-Band

    Abstract: No abstract text available
    Text: FLL21E060IY L,S-band High Power GaAs FET FEATURES ・High Voltage Operation VDS=28V GaAs FET ・High Gain: 15.5dB(typ.) at Pout=41.8dBm(Avg.) ・Broad Frequency Range : 2110 to 2170MHz ・High Reliability DESCRIPTION The FLL21E060IY is a high power GaAs FET that offers high efficiency,


    Original     		PDF FLL21E060IY 2170MHz FLL21E060IY L-Band

    R15-24

    Abstract: 40dBm f1214
    Text: FLL21E045IY L,S-band High Power GaAs FET FEATURES ・High Voltage Operation VDS=28V GaAs FET ・High Gain: 15.5dB(typ.) at Pout=40dBm(Avg.) ・Broad Frequency Range : 2110 to 2170MHz ・High Reliability DESCRIPTION The FLL21E045IY is a high power GaAs FET that offers high efficiency,


    Original     		PDF FLL21E045IY 40dBm 2170MHz FLL21E045IY R15-24 f1214

    Untitled

    Abstract: No abstract text available
    Text: AM030MH4-BI-R HiFET High Voltage GaAs FET August 2007 Rev. 1 DESCRIPTION AMCOM’s AM030MH4-BI-R is part of the BH series of GaAs HiFETs. The HiFET is a partially matched patented device configuration for high voltage, high power, high linearity, and broadband applications. This


    Original     		PDF AM030MH4-BI-R AM030MH4-BI-R

    Untitled

    Abstract: No abstract text available
    Text: AM010MH4-BI-R HiFET High Voltage GaAs FET August 2007 Rev. 1 DESCRIPTION AMCOM’s AM010MH4-BI-R is part of the BI series of GaAs HiFETs. The HiFET is a partially matched patented device configuration for high voltage, high power, high linearity, and broadband applications. This


    Original     		PDF AM010MH4-BI-R AM010MH4-BI-R

    Untitled

    Abstract: No abstract text available
    Text: AM030WH4-BI-R December 2008 Rev. 0 HiFET High Voltage GaAs FET DESCRIPTION AMCOM’s AM030WH4-BI-R is part of the BI series of GaAs HiFETs. The HiFET is a partially matched patented device configuration for high voltage, high power, high linearity, and broadband applications. This


    Original     		PDF AM030WH4-BI-R AM030WH4-BI-R 300mA)

    AM030MH4-BI-R

    Abstract: AM030MH4-BI
    Text: AM030MH4-BI-R Aug 2010 Rev 3 HiFET High Voltage GaAs FET DESCRIPTION 0.025 AMCOM’s AM030MH4-BI-R is part of the BI series of GaAs HiFETs. The HiFET is a partially matched patented device configuration for high voltage, high power, high linearity, and broadband applications.


    Original     		PDF AM030MH4-BI-R AM030MH4-BI-R AM030MH4-BI

    AM010MH4-BI-R

    Abstract: No abstract text available
    Text: AM010MH4-BI-R Aug 2010 Rev 2 HiFET High Voltage GaAs FET DESCRIPTION 0.025 AMCOM’s AM010MH4-BI-R is part of the BI series of GaAs HiFETs. The HiFET is a partially matched patented device configuration for high voltage, high power, high linearity, and broadband applications.


    Original     		PDF AM010MH4-BI-R AM010MH4-BI-R

    Untitled

    Abstract: No abstract text available
    Text: FLL21E135IX L,S-band High Power GaAs FET FEATURES ・High Voltage Operation VDS=28V GaAs FET ・High Gain: 15.5dB(typ.) at Pout=44.8dBm(Avg.) ・Broad Frequency Range : 2110 to 2170MHz ・High Reliability DESCRIPTION The FLL21E135IX is a high power GaAs FET that offers


    Original     		PDF FLL21E135IX 2170MHz FLL21E135IX

    AM030WH4-BI-R

    Abstract: No abstract text available
    Text: AM030WH4-BI-R January 2011 REV 3 HiFET High Voltage GaAs FET DESCRIPTION 0.025 AMCOM’s AM030WH4-BI-R is part of the BI series of GaAs HiFETs. The HiFET is a partially matched patented device configuration for high voltage, high power, high linearity, and broadband applications. This


    Original     		PDF AM030WH4-BI-R AM030WH4-BI-R

    AM020MH2-BI-R

    Abstract: No abstract text available
    Text: AM020MH2-BI-R Aug 2010 Rev 4 HiFET High Voltage GaAs FET DESCRIPTION 0.025 AMCOM’s AM020MH2-BI-R is a part of the BI series of GaAs HiFETs. The HiFET is a partially matched patented device configuration for high voltage, high power and broadband applications.


    Original     		PDF AM020MH2-BI-R AM020MH2-BI-R