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    HGTG30N60 Price and Stock

    onsemi HGTG30N60A4D

    IGBT 600V 75A TO-247-3
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    DigiKey HGTG30N60A4D Tube 165 1
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    Newark HGTG30N60A4D Bulk 376 1
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    Avnet Silica HGTG30N60A4D 143 Weeks 450
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    Rochester Electronics LLC HGTG30N60C3

    IGBT 600V 63A SUPER-247
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    onsemi HGTG30N60A4

    IGBT 600V 75A TO-247-3
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    Rochester Electronics LLC HGTG30N60B3

    IGBT 600V 60A TO-247
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    DigiKey HGTG30N60B3 Tube 95
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    onsemi HGTG30N60B3

    IGBT 600V 60A TO-247-3
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    Bristol Electronics HGTG30N60B3 57 2
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    Quest Components HGTG30N60B3 45
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    EBV Elektronik HGTG30N60B3 143 Weeks 30
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    HGTG30N60 Datasheets (39)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HGTG30N60A4 Fairchild Semiconductor 600 V, SMPS N-Channel IGBT Original PDF
    HGTG30N60A4 Fairchild Semiconductor 600V, SMPS Series N-Channel IGBT Original PDF
    HGTG30N60A4 Intersil 600V, SMPS Series N-Channel IGBT Original PDF
    HGTG30N60A4 Intersil 600V, SMPS Series N-Channel IGBT Scan PDF
    HGTG30N60A4D Fairchild Semiconductor 600 V, SMPS N-Channel IGBT with Anti-Parallel Hyperfast Diode Original PDF
    HGTG30N60A4D Fairchild Semiconductor 600V Original PDF
    HGTG30N60A4D Intersil 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Original PDF
    HGTG30N60A4D Intersil 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Scan PDF
    HGTG30N60A4D_NL Fairchild Semiconductor 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Original PDF
    HGTG30N60A4_NL Fairchild Semiconductor 600V, SMPS Series N-Channel IGBT Original PDF
    HGTG30N60B3 Fairchild Semiconductor 60 A, 600 V, UFS N-Channel IGBT Original PDF
    HGTG30N60B3 Fairchild Semiconductor 600V, UFS Series N-Channel IGBT Original PDF
    HGTG30N60B3 Harris Semiconductor 600V / 1200V UFS Series IGBTs Original PDF
    HGTG30N60B3 Intersil IGBT Chip, N Channel, 600V, TO-247, 3-Pin Original PDF
    HGTG30N60B3 Intersil 60A, 600V, UFS Series N-Channel IGBT Original PDF
    HGTG30N60B3 Intersil 60A, 600V, UFS Series N-Channel IGBT Scan PDF
    HGTG30N60B3D Fairchild Semiconductor 60 A, 600 V, UFS N-Channel IGBT with Anti-Parallel Hyperfast Diode Original PDF
    HGTG30N60B3D Fairchild Semiconductor 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Original PDF
    HGTG30N60B3D Fairchild Semiconductor 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Original PDF
    HGTG30N60B3D Harris Semiconductor 600V / 1200V UFS Series IGBTs Original PDF

    HGTG30N60 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    g30n60

    Abstract: No abstract text available
    Text: HGTG30N60B3 Data Sheet November 2013 600 V, NPT IGBT Features The HGTG30N60B3 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at


    Original     		HGTG30N60B3 HGTG30N60B3 TA49170. O-247 g30n60 PDF

    G30N60

    Abstract: TA49053 TA49172 TA49170 G30N60B3 G30N60B3D HGTG30N60B3D LD26 HGTG30N60b 200pulse
    Text: HGTG30N60B3D Data Sheet April 2004 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Packaging JEDEC STYLE TO-247 The HGTG30N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a


    Original     		HGTG30N60B3D O-247 HGTG30N60B3D 150oC. TA49170. TA49053. G30N60 TA49053 TA49172 TA49170 G30N60B3 G30N60B3D LD26 HGTG30N60b 200pulse PDF

    P channel 600v 20a IGBT

    Abstract: hg*20n60 600v HGTG30N60C3D 1200v 20a IGBT 1200v 30A to247 LC96585 UFS Series P-Channel HGTD3N60B3 HGTD3N60C3
    Text: HGTG20N60C3R HGTG20N60C3DR 2.3V TBD µJ HGTG30N60C3R HGTG30N60C3DR 2.3V TBD µJ HGTG20N60B3 HGTG20N60B3D 2.0V 1050µJ HGTG30N60B3 HGTG30N60B3D 2.2V 1700µJ HGTG40N60B3 2.0V 2500µJ HGTG20N60C3 HGTG20N60C3D 1.8V 1500µJ HGTG30N60C3 HGTG30N60C3D 1.8V 2500µJ


    Original     		HGTD3N60C3 HGTD7N60C3 HGTD3N60C3R HGTD7N60C3R 200ns HGTD3N60B3 HGTD7N60B3 HGTG20N60C3R HGTG20N60C3DR HGTG30N60C3R P channel 600v 20a IGBT hg*20n60 600v HGTG30N60C3D 1200v 20a IGBT 1200v 30A to247 LC96585 UFS Series P-Channel HGTD3N60B3 HGTD3N60C3 PDF

    30N60A4

    Abstract: 30N60A4D HGTG*N60A4D 30n60 hgtp30n60a4 hgtg30n60a4d TA49373 30N60A HGTP30N60A4D TA49345
    Text: HGTG30N60A4D Data Sheet January 2000 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. This device has the high input


    Original     		HGTG30N60A4D HGTG30N60A4D 150oC. TA49343. TA49373. 30N60A4 30N60A4D HGTG*N60A4D 30n60 hgtp30n60a4 TA49373 30N60A HGTP30N60A4D TA49345 PDF

    30n60a4d

    Abstract: 30N60A4 TA49373 hgtp30n60a4 TA49343 HGTG30N60A4D LD26 TA49345 HGTG*N60A4D
    Text: HGTG30N60A4D Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. This device has the high input


    Original     		HGTG30N60A4D HGTG30N60A4D 150oC. TA49343. TA49373. 30n60a4d 30N60A4 TA49373 hgtp30n60a4 TA49343 LD26 TA49345 HGTG*N60A4D PDF

    G30N60A4

    Abstract: HGTG30N60A4 IGBT G30N60A4 g30n60a smart ups 750 circuit g30n60 247A03
    Text: HGTG30N60A4 Data Sheet April 2013 600V SMPS IGBT Features The HGTG30N60A4 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high


    Original     		HGTG30N60A4 HGTG30N60A4 TA49343. O-247 G30N60A4 G30N60A4 IGBT G30N60A4 g30n60a smart ups 750 circuit g30n60 247A03 PDF

    g30n60c3d

    Abstract: G30N60 TA49053 TA49051 HGTG30N60C3D LD26 RHRP3060
    Text: HGTG30N60C3D Data Sheet January 2009 File Number 4041.2 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes Features The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input


    Original     		HGTG30N60C3D HGTG30N60C3D 150oC. TA49051. TA49053. 230ns 150oC g30n60c3d G30N60 TA49053 TA49051 LD26 RHRP3060 PDF

    G30N60B3

    Abstract: G30N60 G30N60B3 hARRIS TA49170 G30N60B
    Text: HGTG30N60B3 S E M I C O N D U C T O R 60A, 600V, UFS Series N-Channel IGBT January 1998 Features Description • 60A, 600V, TC = 25oC The HGTG30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a


    Original     		HGTG30N60B3 HGTG30N60B3 150oC. TA49170. 60nts 1-800-4-HARRIS G30N60B3 G30N60 G30N60B3 hARRIS TA49170 G30N60B PDF

    HGTP7N60B3D

    Abstract: 1200v diode to247 1200v 30A to247 TO220AB IGBT 1200v HGTD3N60C3R DIODE 3A 600V HGTD3N60B3 HGTD3N60C3 HGTD3N60C3RS HGTD7N60B3S
    Text: 2-3 HGTG20N60C3R HGTG20N60C3DR 2.3V 3000µJ HGTG27N60C3R HGTG27N60C3DR 2.3V 2000µJ HGTG20N60B3 HGTG20N60B3D 2.0V 1050µJ HGTG30N60B3 HGTG30N60B3D 2.2V 1700µJ HGTG40N60B3 2.0V 2500µJ HGTG20N60C3 HGTG20N60C3D 1.8V 1500µJ HGTG30N60C3 HGTG30N60C3D 1.8V 2500µJ


    Original     		HGTD3N60C3 HGTD7N60C3 HGTD3N60C3R HGTD7N60C3R 200ns HGTD3N60B3 HGTD7N60B3 HGTG20N60C3R HGTG20N60C3DR HGTG27N60C3R HGTP7N60B3D 1200v diode to247 1200v 30A to247 TO220AB IGBT 1200v HGTD3N60C3R DIODE 3A 600V HGTD3N60B3 HGTD3N60C3 HGTD3N60C3RS HGTD7N60B3S PDF

    No 42 G30N60C3D

    Abstract: g30n60c3d HGTG30N60C3D LD26 RHRP3060 TA49051 TA49053 g30n60 G30N60C
    Text: HGTG30N60C3D S E M I C O N D U C T O R 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode August 1995 Features • • • • • Package o 63A, 600V at TC = +25 C Typical Fall Time - 230ns at TJ = +150oC Short Circuit Rating Low Conduction Loss


    Original     		HGTG30N60C3D 230ns 150oC O-247 HGTG30N60C3D 150oC. TA49051. 1-800-4-HARRIS No 42 G30N60C3D g30n60c3d LD26 RHRP3060 TA49051 TA49053 g30n60 G30N60C PDF

    G30N60B3

    Abstract: TA49170
    Text: HGTG30N60B3 Data Sheet April 2013 600 V, NPT IGBT Features The HGTG30N60B3 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where


    Original     		HGTG30N60B3 HGTG30N60B3 TA49170. O-247 G30N60B3 O-247 G30N60B3 TA49170 PDF

    G30N60

    Abstract: G30N60C3 G30N60C3S HGTG SC-15 HGT4E30N60C3S HGTG30N60C3 LD26 RHRP3060 TA49051
    Text: HGTG30N60C3, HGT4E30N60C3S Data Sheet December 2001 63A, 600V, UFS Series N-Channel IGBT Features The HGTG30N60C3 and HGT4E30N60C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the


    Original     		HGTG30N60C3, HGT4E30N60C3S HGTG30N60C3 HGT4E30N60C3S 150oC. G30N60 G30N60C3 G30N60C3S HGTG SC-15 LD26 RHRP3060 TA49051 PDF

    Untitled

    Abstract: No abstract text available
    Text: IGBT ТРАНЗИСТОРЫ Наименование HGTD3N60B3S HGTG12N60B3 HGTG12N60B3D HGTG12N60C3D HGTG30N60B3 HGTP12N60B3 HGTP12N60B3D HGTP14N36G3VL HGTP14N40F3VL HGTP20N60B3 HGTP3N60B3 HGTP7N60B3 HGTP7N60B3D IRG4BC20UD IRG4BC30F IRG4BC30U IRG4BC30UD


    Original     		HGTD3N60B3S HGTG12N60B3 HGTG12N60B3D HGTG12N60C3D HGTG30N60B3 HGTP12N60B3 HGTP12N60B3D HGTP14N36G3VL HGTP14N40F3VL HGTP20N60B3 PDF

    30N60A4D

    Abstract: No abstract text available
    Text: HGTG30N60A4D Data Sheet September 2004 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. This device has the high input


    Original     		HGTG30N60A4D HGTG30N60A4D 150oC. TA49343. TA49373. 30N60A4D PDF

    30N60A4D

    Abstract: TA49373 30N60A4 HGTG30N60A4D TA49345 ICE 280 TA49343 30N60A
    Text: HGTG30N60A4D Data Sheet January 2000 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. This device has the high input


    Original     		HGTG30N60A4D HGTG30N60A4D 150oC. TA49343. TA49373. 30N60A4D TA49373 30N60A4 TA49345 ICE 280 TA49343 30N60A PDF

    G30N60

    Abstract: TA49051 G30N60C3 HGTG30N60C3 LD26 RHRP3060 igbts
    Text: HGTG30N60C3 Data Sheet December 2001 63A, 600V, UFS Series N-Channel IGBT Features The HGTG30N60C3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar


    Original     		HGTG30N60C3 HGTG30N60C3 150oC. 230ns 150oC G30N60 TA49051 G30N60C3 LD26 RHRP3060 igbts PDF

    g30n60b3

    Abstract: G30N60 HGTG30N60B3 TA49170 HGTG30N60B3D LD26 DIODE B2 IC2560
    Text: HGTG30N60B3 Data Sheet August 2003 60A, 600V, UFS Series N-Channel IGBT Features The HGTG30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar


    Original     		HGTG30N60B3 HGTG30N60B3 150oC. 150oC g30n60b3 G30N60 TA49170 HGTG30N60B3D LD26 DIODE B2 IC2560 PDF

    G30N60B3D

    Abstract: G30N60 G30N60B3 HGTG30N60B3D LD26 TA49053 TA49170 TA49172
    Text: HGTG30N60B3D Data Sheet January 2000 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input


    Original     		HGTG30N60B3D HGTG30N60B3D 150oC. TA49170. TA49053. 150oC G30N60B3D G30N60 G30N60B3 LD26 TA49053 TA49170 TA49172 PDF

    G30N60C3

    Abstract: igbt g30n60c3 HGTG30N60C3 LD26 RHRP3060 TA49051
    Text: HGTG30N60C3 Data Sheet January 2000 63A, 600V, UFS Series N-Channel IGBT Features The HGTG30N60C3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar


    Original     		HGTG30N60C3 HGTG30N60C3 150oC. 230ns 150oC G30N60C3 igbt g30n60c3 LD26 RHRP3060 TA49051 PDF

    g30n60a4

    Abstract: g30n60a IGBT G30N60A4 TA49343 G30N60A4 transistor g30n60 12V 30A diode HGTG30N60A4 TA49373 ICE 280
    Text: HGTG30N60A4 Data Sheet January 2000 File Number 600V, SMPS Series N-Channel IGBT Features The HGTG30N60A4 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a


    Original     		HGTG30N60A4 HGTG30N60A4 150oC. 100kHz 200kHz 125oC g30n60a4 g30n60a IGBT G30N60A4 TA49343 G30N60A4 transistor g30n60 12V 30A diode TA49373 ICE 280 PDF

    G30N60A4

    Abstract: G30N60A G30N60 IGBT G30N60A4 TA49343 TA49373 HGTG30N60A4 G30N60A4 transistor LD26
    Text: HGTG30N60A4 Data Sheet January 2000 File Number 600V, SMPS Series N-Channel IGBT Features The HGTG30N60A4 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a


    Original     		HGTG30N60A4 HGTG30N60A4 150oC. 100kHz 200kHz 125oC G30N60A4 G30N60A G30N60 IGBT G30N60A4 TA49343 TA49373 G30N60A4 transistor LD26 PDF

    G30N60A4

    Abstract: G30N60A TIL-220 IGBT G30N60A4 TA49343 G30N60A4 transistor G30N60 HGTG30N60A4 TA49373 transistor bipolar collector current 1mA
    Text: i n t e HGTG30N60A4 r r i i J a n u a ry . m D ata S h eet 600V, SMPS Series N-Channel IGBT File N u m b er i 4829 Features The HGTG30N60A4 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a


    OCR Scan     		HGTG30N60A4 HGTG30N60A4 TA49343. O-247 G30N60A4 G30N60A4 G30N60A TIL-220 IGBT G30N60A4 TA49343 G30N60A4 transistor G30N60 TA49373 transistor bipolar collector current 1mA PDF

    IGBT 200A 1200V

    Abstract: T0247 T0220AB BUP313D IGBT IRG4BC20KD igbt 20A 1200v IGBT 1200V 60A T0247A BUP314D MG50Q2YS40
    Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su electronics Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi h MOflynM IGBT b an^aBMTHOM nop^AKe BUP203 (T0220) KpaTKoe onMcaHMe MG50Q2YS40 BUP212 BUP213 BUP313 BUP313D BUP314 BUP314D GT20D101-T0s GT20D201-T0s HGTG12N60A4D HGTG30N60B3D


    OCR Scan     		bup203 t0220) BUP212 BUP213 BUP313 BUP313D BUP314 BUP314D GT20D101-T0s GT20D201-T0s IGBT 200A 1200V T0247 T0220AB BUP313D IGBT IRG4BC20KD igbt 20A 1200v IGBT 1200V 60A T0247A BUP314D MG50Q2YS40 PDF

    G30N60

    Abstract: TA49053 G30N60B3D G30N60B3 TA49172 transistor C110 Transistor No C110 TA49170 LG 631 LG 631 IC
    Text: in t e HGTG30N60B3D r r ii J a n u a ry . m D ata S h eet 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input


    OCR Scan     		HGTG30N60B3D HGTG30N60B3D TA49170. TA49053. G30N60 TA49053 G30N60B3D G30N60B3 TA49172 transistor C110 Transistor No C110 TA49170 LG 631 LG 631 IC PDF