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    HBT 01 - 01 G Price and Stock

    SUNON USA SP101AT-1122HBT.GN

    AC Fans Axial Fan, 120x120x25mm, 115VAC, 66/80CFM, 0.14/0.17"H2O, Ball, Terminals
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SP101AT-1122HBT.GN 276
    • 1 $27.48
    • 10 $25.09
    • 100 $22.55
    • 1000 $22.42
    • 10000 $22.42
    		Buy Now

    SUNON USA SP101A-1123HBT.GN

    AC Fans Axial Fan, 120x120x38mm, 115VAC, 87/107CFM, 0.26/0.32"H2O, Ball, Terminals
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SP101A-1123HBT.GN 242
    • 1 $25.84
    • 10 $22.35
    • 100 $20.09
    • 1000 $19.03
    • 10000 $19.03
    		Buy Now

    Texas Instruments TPS40131RHBR

    Switching Controllers 2-Ph Synch Buck Cntr A 595-TPS40131RHBT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics TPS40131RHBR 232
    • 1 $4.05
    • 10 $3.44
    • 100 $3.44
    • 1000 $2.26
    • 10000 $1.75
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    SUNON USA DP201A-2123HBT.GN

    AC Fans Axial Fan, 120x120x38mm, 220-240VAC, 87/107CFM, 0.26/0.32"H2O, Ball, Terminals
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics DP201A-2123HBT.GN 128
    • 1 $25.84
    • 10 $23.03
    • 100 $20.65
    • 1000 $18.78
    • 10000 $18.78
    		Buy Now

    SUNON USA DP201AT-2122HBT.GN

    AC Fans Axial Fan, 120x120x25mm, 220-240VAC, 66/80CFM, 0.14/0.17"H2O, Ball, Terminals
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics DP201AT-2122HBT.GN 28
    • 1 $27.48
    • 10 $25.1
    • 100 $22.2
    • 1000 $20.58
    • 10000 $20.58
    		Buy Now
    Find more HBT 01 - 01 G price and stock on Findchips.com

    HBT 01 - 01 G Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MMG5004N Rev. 0, 8/2006 Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor Technology InGaP HBT MMG5004NR2 WLAN Power Amplifier 4.9-5.9 GHz, 24 dB, 23 dBm 802.11a WLAN POWER AMPLIFIER InGaP HBT CASE 1483-01 QFN 3x3


    Original     		MMG5004N MMG5004NR2 MMG5004N PDF

    39E2527A

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR MGFS39E2527A-01 2.5-2.7GHz HBT Integrated Circuit Specifications are subject to change without notice. Outline Drawing DESCRIPTION 6.0 6.0 30 29 28 27 26 25 24 23 22 21 39E2527A Lot. No JAPAN 11 12 13 14 15 16 17 18 19 20 InGaP HBT Device


    Original     		MGFS39E2527A-01 39E2527A 30dBm 64QAM, MGFS39E2527A 39E2527A PDF

    39E2527A

    Abstract: GRM155B11E103K GRM155B11H102K spectrum emission mask MITSUBISHI Microwave PW2100 GRM32EB31C476K grm188B31E105K metal detector plans wimax spectrum mask
    Text: MITSUBISHI SEMICONDUCTOR MGFS39E2527A-01 2.5-2.7GHz HBT Integrated Circuit Specifications are subject to change without notice. Outline Drawing DESCRIPTION 6.0 6.0 30 29 28 27 26 25 24 23 22 21 39E2527A Lot. No JAPAN 11 12 13 14 15 16 17 18 19 20 InGaP HBT Device


    Original     		MGFS39E2527A-01 39E2527A 30dBm 64QAM, MGFS39E2527A 39E2527A GRM155B11E103K GRM155B11H102K spectrum emission mask MITSUBISHI Microwave PW2100 GRM32EB31C476K grm188B31E105K metal detector plans wimax spectrum mask PDF

    Untitled

    Abstract: No abstract text available
    Text: Mitsubishi Semiconductors Preliminary MGFS38E2527-01 2.5 - 2.7GHz HBT MMIC MODULE Specifications are subject to change without notice. Outline Drawing DESCRIPTION MGFS38E2527 is a GaAs RF amplifier designed for WiMAX CPE. DIM in mm 1.0 4.0 • • • •


    Original     		MGFS38E2527-01 MGFS38E2527 64QAM, IEEE802 16e-2005 PDF

    GRM155B11C223K

    Abstract: RPC03T GRM155B11 GRM32EB31C476K
    Text: Mitsubishi Semiconductors Preliminary MGFS38E2527-01 2.5 - 2.7GHz HBT MMIC MODULE Specifications are subject to change without notice. Outline Drawing DESCRIPTION MGFS38E2527 is a GaAs RF amplifier designed for WiMAX CPE. DIM in mm 1.0 4.0 • • • •


    Original     		MGFS38E2527-01 MGFS38E2527 64QAM, IEEE802 16e-2005 0V60120sec GRM155B11C223K RPC03T GRM155B11 GRM32EB31C476K PDF

    HBT 01 05

    Abstract: No abstract text available
    Text: Mitsubishi Semiconductors MGFS38E3336-01 3.3 - 3.6GHz HBT MMIC MODULE Specifications are subject to change without notice. Outline Drawing DESCRIPTION MGFS38E3336 is a GaAs RF amplifier designed for WiMAX CPE. DIM in mm 1.0 4.0 • • • • • • •


    Original     		MGFS38E3336-01 MGFS38E3336 64QAM, IEEE802 16e-2005 0120sec HBT 01 05 PDF

    GRM31CB30J476K

    Abstract: MGFS38E2325 RPC03T
    Text: Mitsubishi Semiconductors MGFS38E2325-01 2.3 - 2.5GHz HBT MMIC MODULE Specifications are subject to change without notice. Outline Drawing DESCRIPTION MGFS38E2325 is a GaAs RF amplifier designed for WiMAX CPE. DIM in mm 1.0 4.0 • • • • • • •


    Original     		MGFS38E2325-01 MGFS38E2325 64QAM, IEEE802 16e-2005 0120sec GRM31CB30J476K RPC03T PDF

    Untitled

    Abstract: No abstract text available
    Text: Mitsubishi Semiconductors MGFS38E3336-01 3.3 - 3.6GHz HBT MMIC MODULE Specifications are subject to change without notice. Outline Drawing DESCRIPTION MGFS38E3336 is a GaAs RF amplifier designed for WiMAX CPE. DIM in mm 1.0 4.0 • • • • • • •


    Original     		MGFS38E3336-01 MGFS38E3336 64QAM, IEEE802 16e-2005 PDF

    Untitled

    Abstract: No abstract text available
    Text: Mitsubishi Semiconductors MGFS38E2325-01 2.3 - 2.5GHz HBT MMIC MODULE Specifications are subject to change without notice. Outline Drawing DESCRIPTION MGFS38E2325 is a GaAs RF amplifier designed for WiMAX CPE. DIM in mm 1.0 4.0 • • • • • • •


    Original     		MGFS38E2325-01 MGFS38E2325 64QAM, IEEE802 16e-2005 PDF

    erb1885c2d

    Abstract: No abstract text available
    Text: 2.3-2.7 GHz InGaP HBT 8W Linear Power Amplifier CHV2720-QJ November 2007 - Rev 01-Nov-07 Features P1dB, 8W Power Gain, 12 dB Efficiency, 25% @ 1W Positive Voltage Supply, +5V to +12V Integrated Active Bias Circuit Control Voltage Allows Different Current Settings


    Original     		01-Nov-07 CHV2720-QJ CHV2720-QJ 31dBm erb1885c2d PDF

    HBT 01 05G

    Abstract: trans-impendance CH-6805 HRXM40A 10 gb PIN receiver
    Text: HRXM40A 40 Gb/s Optical Receiver REV 09/01 Features InGaAs-pin-photodiode with InP-HBT-preamplifier Bitrates up to 40 Gb/s 14-pin butterfly module with k-connector, SMF pigtail Low power consumption Product Description HRXM40A modules are high-speed fiber-optical receivers


    Original     		HRXM40A 14-pin HRXM40A CH-6805 HBT 01 05G trans-impendance 10 gb PIN receiver PDF

    HBT 01 05G

    Abstract: InP HBT transistor HRXC40A inp transistor CH-6805
    Text: HRXC40A 40 Gb/s Optical Receiver REV 09/01 Features InGaAs-pin-photodiode with InP-HBT-preamplifier High bandwidth Bitrates up to 40 Gb/s Low power consumption Product Description HRXC40A chips are high-speed fiber-optical receivers for high-capacity fiber-optical communication networks with


    Original     		HRXC40A HRXC40A CH-6805 HBT 01 05G InP HBT transistor inp transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: DC-8.0 GHz InGaP HBT, MMIC or Packaged Matched Gain Block Amplifier September 2006 - Rev 01-Sep-06 CGB7016-SC -BD Features Functional Block Diagram (SOT-89) Low Operating Voltage: 5V 34.0 dBm Output IP3 @ 850 MHz 3.8 dB Noise Figure @ 850 MHz 22.4 dB Gain @ 850 MHz


    Original     		01-Sep-06 CGB7016-SC OT-89 OT-86 PDF

    CGB7289-BD

    Abstract: CGB7289-SC CGB7289-SC-0G00 CGB7289-SC-0G0T CGB7289-SP-0G00 CGB7289-SP-0G0T PB-CGB7289-SC-0000 PB-CGB7289-SP-0000
    Text: DC-2.5 GHz InGaP HBT Matched Gain Block Amplifier September 2006 - Rev 01-Sep-06 CGB7289-SC Features Functional Block Diagram SOT-89 41.0 dBm Output IP3 @ 2140 MHz 21.0 dB Gain @ 900 MHz 13.3 dB Gain @ 2140 MHz 23.7 dBm P1dB @ 2140 MHz Low Performance Variation Over Temperature


    Original     		01-Sep-06 CGB7289-SC OT-89 OT-86 CGB7289-BD CGB7289-SC CGB7289-SC-0G00 CGB7289-SC-0G0T CGB7289-SP-0G00 CGB7289-SP-0G0T PB-CGB7289-SC-0000 PB-CGB7289-SP-0000 PDF

    CGB7001-BD

    Abstract: CGB7001-SC CGB7001-SC-0G00 CGB7001-SC-0G0T CGB7001-SP-0G00 CGB7001-SP-0G0T MCH185A101JK PB-CGB7001-SC-0000 PB-CGB7001-SP-0000
    Text: DC-6.0 GHz InGaP HBT, MMIC or Packaged Matched Gain Block Amplifier September 2006 - Rev 01-Sep-06 CGB7001-SC -BD Features Functional Block Diagram (SOT-89) Low Operating Voltage: 5V 28.0 dBm Output IP3 @ 850 MHz 3.3 dB Noise Figure @ 850 MHz 20.5 dB Gain @ 850 MHz


    Original     		01-Sep-06 CGB7001-SC OT-89 OT-86 CGB7001-BD CGB7001-SC CGB7001-SC-0G00 CGB7001-SC-0G0T CGB7001-SP-0G00 CGB7001-SP-0G0T MCH185A101JK PB-CGB7001-SC-0000 PB-CGB7001-SP-0000 PDF

    CGB7017-SC

    Abstract: CGB7017-SC-0G00 CGB7017-SC-0G0T MCH185A101JK PB-CGB7017-SC-0000
    Text: DC-8.0 GHz InGaP HBT Packaged Matched Gain Block Amplifier October 2008 - Rev 01-Oct-08 CGB7017-SC Features Functional Block Diagram SOT-89 Low Operating Voltage: 5V 33.8 dBm Output IP3 @ 850 MHz 3.3 dB Noise Figure @ 850 MHz 23.1 dB Gain @ 850 MHz, 19.5 dB @ 6 GHz


    Original     		01-Oct-08 CGB7017-SC OT-89 CGB7017-SC CGB7017-SC-0G00 CGB7017-SC-0G0T MCH185A101JK PB-CGB7017-SC-0000 PDF

    mmic C5 sot 86

    Abstract: CGB7017-BD CGB7017-SC CGB7017-SC-0G00 CGB7017-SC-0G0T CGB7017-SP-0G00 CGB7017-SP-0G0T MCH185A101JK PB-CGB7017-SC-0000 sc 6700
    Text: DC-8.0 GHz InGaP HBT, MMIC or Packaged Matched Gain Block Amplifier September 2006 - Rev 01-Sep-06 CGB7017-SC -BD Features Functional Block Diagram (SOT-89) Low Operating Voltage: 5V 33.8 dBm Output IP3 @ 850 MHz 3.3 dB Noise Figure @ 850 MHz 23.1 dB Gain @ 850 MHz, 19.5 dB @ 6 GHz


    Original     		01-Sep-06 CGB7017-SC OT-89 OT-86 mmic C5 sot 86 CGB7017-BD CGB7017-SC CGB7017-SC-0G00 CGB7017-SC-0G0T CGB7017-SP-0G00 CGB7017-SP-0G0T MCH185A101JK PB-CGB7017-SC-0000 sc 6700 PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR MGFS39E3336-01 3.3-3.6GHz HBT Integrated Circuit Specifications are subject to change without notice. Outline Drawing DESCRIPTION 6.0 Lot. No JAPAN 30 29 28 27 26 25 24 23 22 21 11 12 13 14 15 16 17 18 19 20 6.0 39E3336 30 29 28


    Original     		MGFS39E3336-01 39E3336 30dBm 64QAM, PDF

    39E3336

    Abstract: MGFS39E3336 SWT-9 GRM188B31E105KA75 spectrum emission mask wimax MGFS39E3336-01 GRM155B11H1 160kO GRM188B31E
    Text: MITSUBISHI SEMICONDUCTOR MGFS39E3336-01 3.3-3.6GHz HBT Integrated Circuit Specifications are subject to change without notice. Outline Drawing DESCRIPTION 6.0 Lot. No JAPAN 30 29 28 27 26 25 24 23 22 21 11 12 13 14 15 16 17 18 19 20 6.0 39E3336 30 29 28


    Original     		MGFS39E3336-01 39E3336 30dBm 64QAM, 40deg 39E3336 MGFS39E3336 SWT-9 GRM188B31E105KA75 spectrum emission mask wimax MGFS39E3336-01 GRM155B11H1 160kO GRM188B31E PDF

    HBT 00 01

    Abstract: IBM43RF0100 HBT 01 05G HBT 01 05 HBT transistor mathcad ERJ-3GSYJ100 sige hbt HK10052N7S UMK105B102KW
    Text: Application Note Evaluating the IBM43RF0100 SiGe HBT for CDMA Driver Applications at 1.9 GHz The IBM43RF0100 Silicon-Germanium SiGe High Dynamic Range, Low-Noise Transistor is a discrete heterojunction bipolar transistor (HBT) suitable for a wide range of RF driver applications including


    Original     		IBM43RF0100 IBM43RF0100EV-19 0100cdmadrv HBT 00 01 HBT 01 05G HBT 01 05 HBT transistor mathcad ERJ-3GSYJ100 sige hbt HK10052N7S UMK105B102KW PDF

    TQM713019

    Abstract: No abstract text available
    Text: TQM713019 Data Sheet 3V HBT GaAs CDMA 4x4mm Power Amplifier Module Features Functional Block Diagram Vref 1 10 GND 9 GND Vmode 2 GND 3 8 RFout RFin 4 7 GND Vcc1 5 6 Vcc2 1 Bit Bias Control • • • • • • • • • • • Product Description The TQM713019 is a 3V, 2 stage GaAs HBT Power Amplifier Module designed for


    Original     		TQM713019 TQM713019 IS-95/98 PDF

    1008HQ-33NXJLC

    Abstract: ECP100D ECP100D-G ECP100D-PCB1960 ECP100D-PCB2140 ECP100D-PCB900
    Text: ECP100D 1Watt, High Linearity InGaP HBT Amplifier Applications •   Final stage amplifiers for Repeaters Mobile Infrastructure Defense / Homeland Security Product Features  400 – 2300 MHz  18 dB Gain @ 900 MHz  +31.5 dBm P1dB  +46 dBm Output IP3


    Original     		ECP100D ECP100D 1008HQ-33NXJLC ECP100D-G ECP100D-PCB1960 ECP100D-PCB2140 ECP100D-PCB900 PDF

    NJM2900

    Abstract: NJM4556 NJM4587 NJM2048 NJM2049 NJM2359 NJM3414 NJM3415 NJMREF-01 NJU7283
    Text: NJM4587 N JM R EF-01 NJM2359 NJM4556 NJM3414 NJM3415 NJM2048 NJM2049 NJM2900 NJM3900 NJU7212 N JU 7283> < -X « ij r > r f tS S ,« NJM4556A NJM3414A NJM3414A m 2 I S B A 1) »ititi *^7 >7" 2 » A 0 * m íií^ r> 7 — >F n —/HBtëS 2 ¡ÜSX'f 4 W A 'i t t t - K * ^ r> y


    OCR Scan     		NJM4587 NJMREF-01 NJM2359 NJM4556 NJM4556A NJM3414 NJM3414A NJM3415 NJM2048 NJM2900 NJM4556 NJM2048 NJM2049 NJM2359 NJM3415 NJMREF-01 NJU7283 PDF

    Untitled

    Abstract: No abstract text available
    Text: Product Description SXT Series Stanford M icrodevices’ SXT Series are high performance GaAs Heterojunction Bipolar Transistor HBT MMICs housed in low-cost surface-m ountable plastic packages. T hese HBT MMICs are fabricated using m olecular beam epitaxial growth technology which produces reliable and


    OCR Scan     		Feb-98 PDF