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    GRM155B11C223K

    Abstract: RPC03T GRM155B11 GRM32EB31C476K
    Text: Mitsubishi Semiconductors Preliminary MGFS38E2527-01 2.5 - 2.7GHz HBT MMIC MODULE Specifications are subject to change without notice. Outline Drawing DESCRIPTION MGFS38E2527 is a GaAs RF amplifier designed for WiMAX CPE. DIM in mm 1.0 4.0 • • • •


    Original     		PDF MGFS38E2527-01 MGFS38E2527 64QAM, IEEE802 16e-2005 0V60120sec GRM155B11C223K RPC03T GRM155B11 GRM32EB31C476K

    Untitled

    Abstract: No abstract text available
    Text: Mitsubishi Semiconductors Preliminary MGFS38E2527-01 2.5 - 2.7GHz HBT MMIC MODULE Specifications are subject to change without notice. Outline Drawing DESCRIPTION MGFS38E2527 is a GaAs RF amplifier designed for WiMAX CPE. DIM in mm 1.0 4.0 • • • •


    Original     		PDF MGFS38E2527-01 MGFS38E2527 64QAM, IEEE802 16e-2005

    MGF4937

    Abstract: MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1
    Text: HIGH FREQUENCY DEVICES High Frequency Devices The Best Solution for Realizing the Information Era. Communication networks, such as high speed Internet, video-on-demand and high-speed data communcation, are developing rapidly. We are ready to offer the best solution to the systems for realizing the information era by providing a variety of GaAs/GaN products designed


    Original     		PDF H-CX587-R KI-1311 MGF4937 MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1