H11Y Search Results

H0Y-H13Y

Abstract: H13V
Contextual Info: SSI 32R5281AR M m M lm 14-Channel Two-Terminal Read/Write Device A TDK Group/Company Advance Information July 1992 DESCRIPTION FEATURES The SSI 32R5281AR Read/Write device is a bipolar monolithic integrated circuit designed for use with twoterminal thin-film recording heads. It provides a low

Contextual Info: SSI 32R5281R M M M k m 14-Channel Two-Terminal Read/Write Device s A TDK G rou p /C om pany Advance Information November 1991 DESCRIPTION FEATURES The SSI 32R5281R Read/Write device is a bipolar monolithic integrated circuit designed for use with twoterminal thin-film recording heads. It provides a low

H14Y

Abstract: VM31316
Contextual Info: m a VTC Inc. Value the Customer VM31316 16-CHANNEL, HIGH-PERFORMANCE, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER PRELIMINARY FEATURES July, 1993 CONNECTION DIAGRAM • High Performance: - Read mode gain = 150 V/V - Low input noise = 0.8nVA/Hz maximum - Input capacitance = 25 pF maximum

Contextual Info: vC^VTCInc YJEc— » VM312H 14-CHANNEL, HIGH-PERFORMANCE, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER _ July, 1993 FE A T U R E S TWO/THREE TERMINAL & SERVO PREAMPLIFIERS • • • • • • • • • High Performance:

Contextual Info: SSI 32R5121/5121R Mmsifskms' 14-Channel Thin Film Read/Write Device A TDK G roup/C om pa ny Advance Information November 1991 FEATURES DESCRIPTION The SSI 32R5121/5121R Read/Write devices are bi­ polar monolithic integrated circuits designed for use with two terminal thin film recording heads. They pro­

H11Y

Abstract: sumida variable coil
Contextual Info: SPEC I F I CAT I ON 1 r mau i h i PART >'0. I S-7LB SUMIDA TYPE M i l l • l l i i l 1 l i ^ m T T T T T r M ^ M j m A I B I III Mill II ll ll m ill il i, TTT » m u i I SAMPLE NO. I II II I B I l l II III !■ I ■ 11 ■ 111 ■ I ■ ■ I I I B I B I I I ■ 11 ■ ! ■ ■ ■

VM VTC

Contextual Info: VM31216 Value the Customerm 16-CHANNEL, HIGH-PERFORMANCE, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER August, 1995 FEATURES • • • • • • • • • High Performance: - Read Mode Gain = 150 V/V - Low Input Noise = 0.85nV/VHz Maximum - Input C apacitance = 25 pF Maximum

sol 44

Abstract: H11Y
Contextual Info: SI L I C O N SYSTEMS INC hlE D • 8 2 5 3 ^ 5 00Qb477 MSI I I S I L SSI 32R5121/5121R ¿ 14-Channel Thin Film Read/Write Device ilic m á y s b n s A TDK Group/Company Advance Information November 1991 DESCRIPTION FEATURES The SSI 32R5121/5121R Read/Write devices are bi­

sol 44

Abstract: H13Y
Contextual Info: SSI 32R5121/5121R m m M k n 14-Channel Thin Film Read/Write Device t s Advance Information July, 1990 DESCRIPTION FEATURES The SSI 32R5121/5121R Read/Write devices are bi­ polar monolithic integrated circuits designed for use with two terminal thin film recording heads. They

H12Y

Abstract: H11X H11Y H14Y H10Y 20-channel
Contextual Info: SSI 32R2112R 20-Channel Thin Film Read/Write Device October 1995 FEATURES The SSI 32R2112R is a BiCMOS monolithic integrated circuit designed for use with two-terminal recording heads. They provide a low noise read amplifier, a high performance write driver, write current control, and

H13Y

Abstract: HD12X
Contextual Info: ^ VTC1nc y jr jE S ; . V M 313H 14-CHANNEL, HIGH-PERFORMANCE, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER July, 1993 FEATURES TWO/THREE TERMINAL & SERVO PREAMPLIFIERS • • • • • • • • High Performance: - Read mode gain = 250V/V - Low input noise = 0.8nV/VRz maxim um

Contextual Info: m # * t c , „ c ~ VM313H 14-CHANNEL, HIGH-PERFORMANCE, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER July, 1992 FEATURES DESCRIPTION The VM313H is a high-performance, low-power, high gain, bi­ polar monolithic read / write preamplifier designed for use with two-terminal thin-film recording heads. It provides write current

Contextual Info: ♦T* VM 312H W 14-CHANNEL, HIGH-PERFORMANCE, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER Ju ly , 1992 FEATURES DESCRIPTION The VM312H is a high-performance, low-power, high-gain, bipolar monolithic read / write preamplifier designed for use with two-terminal thin-film recording heads. It provides write

Contextual Info: y y V T C In c. Value the Custom er VM312H 14-CHANNEL, HIGH-PERFORMANCE, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER PRELIMINARY F E A TU R ES CONNECTION DIAGRAMS • High Performance: - Read mode gain = 250V/V CZ] CZ m| CZ H 13X H 13Y HOX HOY H1X nz H1Y n

Contextual Info: SSI 32R2015R ¿immsiiskms 16-Channel Thin Film Read/Write Device A TDK Group/Company Advance Information January 1993 DESCRIPTION FEATURES The SSI 32R2015R is an integrated read/write circuit designed for use with two terminal heads in disk drive systems. The device contains sixteen channels of read

H13Y

Contextual Info: SSI 32R5281R c w m M fc m A TDK Group/Company 14-Channel Two-Terminal Read/Write Device s Advance Information November 1991 DESCRIPTION FEATURES The SSI 32R5281R Read/Write device is a bipolar monolithic integrated circuit designed for use with twoterminal thin-film recording heads. It provides a low

H13Y

Contextual Info: V M 5200 10,14 OR 20-CHANNEL, HIGH-PERFORMANCE, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER August, 1995 FEATURES • High Performance - Rise/Fall Times = 6.5 ns Typical into 1 |iH Head - Input Capacitance = 15 pF Typical - Input Noise = 0.52 nV/VHi Typical - Head Inductance Range = 0 .2 -1 .5 |iH

AN215A

Abstract: mosfet p321 Y12t Using Linvill Techniques common base amplifier circuit designing Using Linvill Techniques for R. F. Amplifiers y11t h21b Y12F common emitter amplifier circuit designing
Contextual Info: Order this document by AN215A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN215A RF SMALL SIGNAL DESIGN USING TWO-PORT PARAMETERS Prepared by: Roy Hejhall INTRODUCTION GENERAL DESIGN CONSIDERATIONS Design of the solid-state, small-signal RF amplifier using two-port parameters is a systematic, mathematical procedure, with an exact solution free from approximation

Contextual Info: November 1990 PRELIMINARY rtfe, ML4415, ML4415R ML4416, ML4416R . Micro Linear 15 Channel Read/Write Circuit GENERAL DESCRIPTION FEATURES The ML4415, ML4416 devices are bipolar monolithic read/write circuits designed for use with fixed disk ferrite center-tapped recording heads. They provide a

32R2015R

Contextual Info: SSI 32R2015R ¿ ik m s if s k m 16-Channel Thin Film Read/Write Device s A TDK Group/Company Advance Information January 1993 DESCRIPTION FEATURES The SSI 32R2015R is an integrated read/write circuit designed for use with two terminal heads in disk drive systems. The device contains sixteen channels ot read

H12Y

Contextual Info: SSI 32R2040 ¿ilmisifskms 14-Channel Two-Terminal Read/Write Device A TDK Group/Company Advance Information January 1993 DESCRIPTION FEATURES The SSI 32R2040 Read/Write device is a bipolar monolithic integrated circuit designed tor use with twoterminal thin-film recording heads. It provides a low

84q00400t000

Abstract: single mode step index plastic fiber 84B00100S000 SF05-SV0-02-0010 SXHP-SV0-19-0010 I-V ZN Y11Y SXHP-SC0-32-0010 850 nm LED FSMA Connectors TPE-U H
Contextual Info: Fiber Optic Cables Assemblies, Connectors and Accessories The Quality Connection LEONI Fiber Optics LEONI Fiber Optics is your specialist for the fiber optics you use in your industrial applications. Our product range includes POF plastic and PCF cables, ready-made cables, connectors and accessories.

Contextual Info: W ^ VValue T the C Customer -In c v VM31316 16-CHANNEL, HIGH-PERFORMANCE, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER ADVANCE INFORMATION FEATURES July, 1992 C O N NECTIO N D IA G R A M TWO-TERMINAL READ/WRITE PREAMPS • High Performance: - Read mode gain = 150V/V_

Contextual Info: r a * 8 VM5200 í % A-A# V T C In c . l/a/ue ífte Cusióme/- 10,14 OR 20-CHANNEL, HIGH-PERFORMANCE, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER August,1997 FEATU R ES • High Performance - Rise/Fall Times = 6.5 ns Typical into 1 nH Head - Input Capacitance = 15 pF Typical